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    MOSFET LOW POWER Search Results

    MOSFET LOW POWER Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation

    MOSFET LOW POWER Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    HUF75307D

    Abstract: No abstract text available
    Text: Harris New Low rDS ON MOSFET Products UltraFETTM is a new low voltage, low rDS(ON) MOSFET design and process technology. The UltraFETTM technology provides Harris with world class power MOSFET product performance in several package styles. The UltraFET TM technology


    Original     		5V/75A/0 OT-223 O-251AA/252AA O-220AB HUF75345P3 HUF75343P3 HUF75339P3 HUF75337P3 HUF75333P3 O-262AA/263AB HUF75307D PDF

    Untitled

    Abstract: No abstract text available
    Text: 2.5V Drive Nch MOSFET 1.5V Drive Pch MOSFET TT8M2 zDimensions Unit : mm zStructure Silicon N-channel MOSFET/ Silicon P-channel MOSFET TSST8 zFeatures 1) Low on-state resistance. 2) Low voltage drive. 3) High power package. (8) (7) (6) (5) (1) (2) (3) (4)


    Original     		R0039A PDF

    Untitled

    Abstract: No abstract text available
    Text: 2.5V Drive Nch MOSFET 1.5V Drive Pch MOSFET TT8M2 zStructure Silicon N-channel MOSFET/ Silicon P-channel MOSFET zDimensions Unit : mm TSST8 zFeatures 1) Low on-state resistance. 2) Low voltage drive. 3) High power package. (8) (7) (6) (5) (1) (2) (3) (4)


    Original     		R0039A PDF

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD Preliminary UTT2N10 Power MOSFET 100V COMPLEMENTARY ENHANCEMENT MODE MOSFET N-CHANNEL  DESCRIPTION The UTC UTT2N10 is a complementary enhancement mode MOSFET, it uses UTC advanced technology to provide customers low on resistance, low gate charge and low threshold voltage.


    Original     		UTT2N10 UTT2N10 UTT2N10G-AA3-R OT-223 QW-R502-B19 PDF

    N mosfet 250v 600A

    Abstract: mosfet 600V 100A ST mosfet 600v MOSFET Module mosfet j 114 QJQ0224005 M5 DIODE mosfet low idss mosfet 600V 100A mosfet 600a 600v
    Text: QJQ0224005 Powerex Inc., 200 Hillis St., Youngwood 15697 724 925-7272 Low side Chopper Mosfet Module 250V 240A Mosfet / 600V 600A Fast Diode Description: Powerex Low side Chopper Mosfet Module designed specially for customer applications. Features: ? ?


    Original     		QJQ0224005 FS40SM-5 N mosfet 250v 600A mosfet 600V 100A ST mosfet 600v MOSFET Module mosfet j 114 QJQ0224005 M5 DIODE mosfet low idss mosfet 600V 100A mosfet 600a 600v PDF

    Untitled

    Abstract: No abstract text available
    Text: 2.5V Drive Nch MOSFET 1.5V Drive Pch MOSFET TT8M2 Structure Silicon N-channel MOSFET/ Silicon P-channel MOSFET Dimensions Unit : mm TSST8 Features 1) Low on-state resistance. 2) Low voltage drive. 3) High power package. (8) (7) (6) (5) (1) (2) (3) (4) Abbreviated symbol : M02


    Original     		R0039A PDF

    UTC 30N06

    Abstract: 30N06 30N06L-TA3-T 30N06L mosfet TEST diode t2 4a 30N06-TA3-T 30N06-TF3-T
    Text: UNISONIC TECHNOLOGIES CO., LTD 30N06 Power MOSFET 30 Amps, 60 Volts N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 30N06 is a low voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and excellent avalanche


    Original     		30N06 30N06 30N06L QW-R502-087 UTC 30N06 30N06L-TA3-T 30N06L mosfet TEST diode t2 4a 30N06-TA3-T 30N06-TF3-T PDF

    30N06L-TA3-T

    Abstract: 30N06 mosfet to-220f 60v
    Text: UNISONIC TECHNOLOGIES CO., LTD 30N06 Power MOSFET 60V, 30A N-CHANNEL POWER MOSFET 1 „ DESCRIPTION The UTC 30N06 is a low voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and excellent avalanche


    Original     		30N06 O-252 30N06 O-220 O-220F QW-R502-087 30N06L-TA3-T mosfet to-220f 60v PDF

    UTT30N06L

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD UTT30N06 Power MOSFET 30A, 60V N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC UTT30N06 is a low voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and excellent avalanche


    Original     		UTT30N06 UTT30N06 QW-R502-637 UTT30N06L PDF

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD UTT30N06 Power MOSFET 30A, 60V N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC UTT30N06 is a low voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and excellent avalanche


    Original     		UTT30N06 UTT30N06 QW-R502-637 PDF

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 30N06 Power MOSFET 30A, 60V N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 30N06 is a low voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and excellent avalanche


    Original     		30N06 30N06 QW-R502-087 PDF

    EIA-541

    Abstract: IRF7835
    Text: PD - 96080A IRF7835UPbF HEXFET Power MOSFET Applications l Synchronous MOSFET for Notebook Processor Power l Synchronous Rectifier MOSFET for Isolated DC-DC Converters in Networking Systems VDSS Benefits l Very Low Qrr l Very Low RDS on at 4.5V VGS l Ultra-Low Gate Impedance


    Original     		6080A IRF7835UPbF EIA-481 EIA-541. EIA-541 IRF7835 PDF

    N mosfet 250v 600A

    Abstract: mosfet 200A mosfet 600V 100A mosfet 600v "MOSFET Module" mosfet 100a 600v 3150 mosfet FS40SM-5 QJQ0220001 mosfet low idss
    Text: QJQ0220001 Powerex Inc., 200 Hillis St., Youngwood 15697 724 925-7272 Low side Chopper Mosfet Module 250V 200A Mosfet / 600V 600A Fast Diode Description: Powerex Low side Chopper Mosfet Module designed specially for customer applications. Features: • •


    Original     		QJQ0220001 FS40SM-5 N mosfet 250v 600A mosfet 200A mosfet 600V 100A mosfet 600v "MOSFET Module" mosfet 100a 600v 3150 mosfet QJQ0220001 mosfet low idss PDF

    2sk3271

    Abstract: MOSFET 20V 100A 2SK3271-01 100A Mosfet POWER MOSFET mosfet low vgs power mosfet low vgs 30V 50A mosfet N-Channel Silicon Power sd 3874
    Text: 2SK3271-01 FUJI POWER MOSFET 200509 N-CHANNEL SILICON POWER MOSFET Trench Power MOSFET Outline Drawings Features High speed switching Low on-resistance No secondary breakdown Low driving power Avalanche-proof TO-3P Applications Switching regulators DC-DC converters


    Original     		2SK3271-01 2sk3271 MOSFET 20V 100A 2SK3271-01 100A Mosfet POWER MOSFET mosfet low vgs power mosfet low vgs 30V 50A mosfet N-Channel Silicon Power sd 3874 PDF

    POWER MOSFET

    Abstract: power mosfet low vgs 2SK3270-01 mosfet amplifiers mosfet power amplifier mosfet low vgs 100 W POWER MOSFET
    Text: 2SK3270-01 FUJI POWER MOSFET 200509 N-CHANNEL SILICON POWER MOSFET Trench Power MOSFET Outline Drawings Features TO-220AB High speed switching Low on-resistance No secondary breakdown Low driving power Avalanche-proof Applications Switching regulators DC-DC converters


    Original     		2SK3270-01 O-220AB -51MHz POWER MOSFET power mosfet low vgs 2SK3270-01 mosfet amplifiers mosfet power amplifier mosfet low vgs 100 W POWER MOSFET PDF

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 30N06V-Q Preliminary Power MOSFET 60V, 30A N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 30N06V-Q is a low voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and excellent avalanche


    Original     		30N06V-Q 30N06V-Q 30N06VL-TM3-T 30N06VG-TM3-T O-251 QW-R502-A29. PDF

    30N06L-TA3-T

    Abstract: 30n06l UTC 30N06 30N06 30N06-TA3-T 30N06-TF3-T
    Text: UNISONIC TECHNOLOGIES CO., LTD 30N06 MOSFET 30 Amps, 60 Volts N-CHANNEL POWER MOSFET 1 DESCRIPTION TO-220 The UTC 30N06 is a low voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and excellent avalanche


    Original     		30N06 O-220 30N06 O-220F QW-R502-087 30N06L-TA3-T 30n06l UTC 30N06 30N06-TA3-T 30N06-TF3-T PDF

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 30N06 Power MOSFET 60V, 30A N-CHANNEL POWER MOSFET 1 TO-252 „ DESCRIPTION The UTC 30N06 is a low voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and excellent avalanche


    Original     		30N06 O-252 30N06 O-220 O-22at QW-R502-087 PDF

    Untitled

    Abstract: No abstract text available
    Text: Data Sheet 4V Drive Nch + Pch MOSFET SH8M12  Structure Dimensions Unit : mm Silicon N-channel MOSFET/ Silicon P-channel MOSFET SOP8 Features 1) Low on-resistance. 2) High power package(SOP8). 3) Low voltage drive(4V drive).  Application Switching


    Original     		SH8M12 R1120A PDF

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD UT60N03 Power MOSFET 30V, 60A N-CHANNEL LOGIC LEVEL MOSFET 1 „ DESCRIPTION This device employs advanced MOSFET technology and features low gate charge while maintaining low on-resistance. Optimized for switching applications, this device improves the


    Original     		UT60N03 O-252 O-251 O-220 UT60N03L-TA3-T UT60N03G-TA3-T UT60N03Lat QW-R502-237 PDF

    Untitled

    Abstract: No abstract text available
    Text: Data Sheet 4V Drive Nch + Pch MOSFET SH8M12  Structure Dimensions Unit : mm Silicon N-channel MOSFET/ Silicon P-channel MOSFET SOP8 Features 1) Low on-resistance. 2) High power package(SOP8). 3) Low voltage drive(4V drive).  Application Switching


    Original     		SH8M12 SH8M12 R1120A PDF

    Untitled

    Abstract: No abstract text available
    Text: 1.5V Drive Nch+Pch MOSFET US6M11 zStructure Silicon N-channel MOSFET / Silicon P-channel MOSFET zDimensions Unit : mm 0.2Max. TUMT6 zFeatures 1) Nch MOSFET and Pch MOSFET are put in TUMT6 package. 2) Low on-resistance. 3) Low voltage drive (1.5V drive).


    Original     		US6M11 R0039A PDF

    TT8M1

    Abstract: No abstract text available
    Text: 1.5V Drive Nch + Pch MOSFET TT8M1  Structure Silicon N-channel MOSFET/ Silicon P-channel MOSFET  Dimensions Unit : mm TSST8 Features 1) Low on-resistance. 2) High power package (TSST8). 3) Low voltage drive (1.5V drive). (8) (7) (6) (5) (1) (2)


    Original     		R1010A TT8M1 PDF

    IRF 4310

    Abstract: irf7832
    Text: PD - 94594E IRF7832 HEXFET Power MOSFET Applications l Synchronous MOSFET for Notebook Processor Power l Synchronous Rectifier MOSFET for Isolated DC-DC Converters in Networking Systems VDSS Benefits l Very Low RDS on at 4.5V VGS l Ultra-Low Gate Impedance


    Original     		94594E IRF7832 EIA-481 EIA-541. IRF 4310 irf7832 PDF