MOSFET P-CH 250V 5A Search Results

MOSFET P-CH 250V 5A Result Highlights (5)

Part	Manufacturer	Description
H5N2508DL-E	Renesas Electronics Corporation	Nch Single Power Mosfet 250V 7A 630Mohm DPAK(L)-(2)/To-251
2SK1761-E	Renesas Electronics Corporation	Nch Single Power Mosfet 250V 12A 350Mohm To-220Ab
H5N2505DSTL-E	Renesas Electronics Corporation	Nch Single Power Mosfet 250V 5A 890Mohm DPAK(S)/To-252
H5N2503P-E	Renesas Electronics Corporation	Nch Single Power Mosfet 250V 50A 55Mohm To-3P
RJK2555DPA-00#J0	Renesas Electronics Corporation	Nch Single Power Mosfet 250V 17A 104Mohm Wpak

MOSFET P-CH 250V 5A Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
IRU1239SC Abstract: iru1239 Full-bridge IR2110 Class-D ir2010 PWM IR2112 IRF540 ir21065 full bridge ir2110 h-bridge irfz44n IRVCM10A 600V 300A igbt dc to dc boost converter Text: SHENZHEN SHOUHE TECHNOLOGY CO., LTD. TEL: 0755-8380 8450 FAX: 0755-8380 8425 Part Information PartNo Function Line Pkg 100MT160PAPBF Discrete IRCI Module MTP 100MT160PA Discrete IRCI Module MTP 100MT160PBPBF Discrete IRCI Module MTP IRCI Module MTP IRCI Module MTK	Original	PDF	100MT160PAPBF 100MT160PA 100MT160PBPBF IRU1239SC iru1239 Full-bridge IR2110 Class-D ir2010 PWM IR2112 IRF540 ir21065 full bridge ir2110 h-bridge irfz44n IRVCM10A 600V 300A igbt dc to dc boost converter
FS10UMA-5A Abstract: No abstract text available Text: MITSUBISHI POWER MOSFET MITSUBISHI NchNch POWER MOSFET ARY FS10UMA-5A FS10UMA-5A MIN RELI . ation change. ecific nal sp subject to fi a t o re is is nic limits a e: Th tr Notice parame Som P HIGH-SPEED SWITCHING USE HIGH-SPEED SWITCHING USE FS10UMA-5A OUTLINE DRAWING	Original	PDF	FS10UMA-5A FS10UMA-5A
Untitled Abstract: No abstract text available Text: MITSUBISHI POWER MOSFET MITSUBISHI NchNch POWER MOSFET ARY FS3KMA-5A FS3KMA-5A MIN RELI . ation change. ecific nal sp subject to fi a t o re is is nic limits a e: Th tr Notice parame Som P HIGH-SPEED SWITCHING USE HIGH-SPEED SWITCHING USE FS3KMA-5A OUTLINE DRAWING	Original	PDF
FK10KM-12 Abstract: P channel MOSFET 10A Text: MITSUBISHI Nch POWER MOSFET FK10KM-12 HIGH-SPEED SWITCHING USE FK10KM-12 OUTLINE DRAWING Dimensions in mm 3 ± 0.3 6.5 ± 0.3 2.8 ± 0.2 φ 3.2 ± 0.2 3.6 ± 0.3 14 ± 0.5 15 ± 0.3 10 ± 0.3 1.1 ± 0.2 1.1 ± 0.2 0.75 ± 0.15 w 2.6 ± 0.2 1 2 3 ¡VDSS . 600V	Original	PDF	FK10KM-12 150ns FK10KM-12 P channel MOSFET 10A
class D 500W irs2092 Abstract: 500w class d circuit diagram schematics AMP7S-200 IRS2092 pcb IRS2092 250w audio amplifier circuit diagram IRS2092 audio amplifier circuit diagram 500w power amplifier pcb diagram IRS2092 power amplifier circuit diagram with pcb IRS2092SPBF Text: IRAUDAMP7S 25W-500W Scalable Output Power Class D Audio Power Amplifier Reference Design Using the IRS2092 Protected Digital Audio Driver By Jun Honda, Manuel Rodríguez, Liwei Zheng CAUTION: International Rectifier suggests the following guidelines for safe operation and handling of	Original	PDF	5W-500W IRS2092 class D 500W irs2092 500w class d circuit diagram schematics AMP7S-200 IRS2092 pcb 250w audio amplifier circuit diagram IRS2092 audio amplifier circuit diagram 500w power amplifier pcb diagram IRS2092 power amplifier circuit diagram with pcb IRS2092SPBF
500w class d circuit diagram schematics Abstract: IRS2092 schematic diagram PWM inverter 500w IRS2092 power amplifier circuit diagram with pcb IRS2092 audio amplifier circuit diagram IRAUDAMP7S 7G17A-220M-R 500w power amplifier stereo irs2092s schematic diagram inverter 500w USING MOSFET Text: IRAUDAMP7S 25W-500W Scalable Output Power Class D Audio Power Amplifier Reference Design Using the IRS2092S Protected Digital Audio Driver By Jun Honda, Manuel Rodríguez, Liwei Zheng CAUTION: International Rectifier suggests the following guidelines for safe operation and handling of	Original	PDF	5W-500W IRS2092S 500w class d circuit diagram schematics IRS2092 schematic diagram PWM inverter 500w IRS2092 power amplifier circuit diagram with pcb IRS2092 audio amplifier circuit diagram IRAUDAMP7S 7G17A-220M-R 500w power amplifier stereo schematic diagram inverter 500w USING MOSFET
AMP7S-100 Abstract: diode z104 IRAUDAMP7S-150 7G17A-220MR IRAUDAMP7S-100 inverter 12v to 220 ac mosfet based Text: IRAUDAMP7S 25W-500W Scalable Output Power Class D Audio Power Amplifier Reference Design Using the IRS2092S Protected Digital Audio Driver By Jun Honda, Manuel Rodríguez, Liwei Zheng CAUTION: International Rectifier suggests the following guidelines for safe operation and handling of	Original	PDF	5W-500W IRS2092S AMP7S-100 diode z104 IRAUDAMP7S-150 7G17A-220MR IRAUDAMP7S-100 inverter 12v to 220 ac mosfet based
TP2350B Abstract: J200 mosfet tp2350 TRIPATH TC2001 TK2350 2 speakers 1 crossover amplifier pcb RB-TK2350-2 MURS120T Tripath Amplifier Tripath Technology Text: Tr i path Technol ogy, I nc. - Techni cal I nfor m ati on RB-TK2350-1 RB-TK2350-2 CLASS-T DIGITAL AUDIO AMPLIFIER REFERENCE BOARD USING DIGITAL POWER PROCESSING DPP T M TECHNOLOGY Technical Information Revision 2.2 November 2004 GENERAL DESCRIPTION The RB-TK2350 reference board is based on the TK2350 digital audio power amplifier chipset from	Original	PDF	RB-TK2350-1 RB-TK2350-2 RB-TK2350 TK2350 RB-TK2350-1 /-21V /-39V /-35V TP2350B J200 mosfet tp2350 TRIPATH TC2001 2 speakers 1 crossover amplifier pcb RB-TK2350-2 MURS120T Tripath Amplifier Tripath Technology
Untitled Abstract: No abstract text available Text: ADP1043A Evaluation Board Forward Active Clamp PRD 1168 Reference Design FEATURES Forward Active Clamp with Synchronous rectifier Voltage Feedback Loop Dimensions: 58.4mmx61mm×12mm Half Brick Input Voltage Range: -34V to -60V DC Output Voltage/Current: 18V/6A DC	Original	PDF	ADP1043A -34to -60VDC
Untitled Abstract: No abstract text available Text: bSE f f CH} l S S i s SEMICONDUCTOR " " N 2 7 2 7 D , HARRIS SEMICOND SECTOR REGISTRATION PENDING Currently Available as FRS234 D, R, H 2 N 7 2 7 9 R 2 N 7 2 7 9 H Radiation Hardened N-Channel Power MOSFETs June1993 Package Features • 9 5A.250V, RDS(on)-0.715Q	OCR Scan	PDF	FRS234 O-257AA 100KRAD 300KRAD 1000KRAD 3000KRAD O-257AA
Untitled Abstract: No abstract text available Text: MITSUBISHI Neh POWER MOSFET FS1OVS-5 HIGH-SPEED SWITCHING USE OUTLINE DRAWING Dimensions in mm •st q w e ■V 6 +i CD Q w r oj q w e r GATE DRAIN SOURCE DRAIN V d s s . 250V rDS ON (MAX). 0.52Í2	OCR Scan	PDF	O-22QS
TFK u 269 Abstract: tfk 731 2SK1917-MR T151 3 TFK 140 TFK diode Text: 2SK1917-MR FUJI POWER MOS-FET N-CMANIMEL SILICON POWER MOS-FET F -II SERIES • Features ■ Outline Drawings • Hich speed switching • Low on-resistance • No secondary breakdown • Low driving power • High voltage • VGS—+ 30V Guarantee ■ Applications	OCR Scan	PDF	2SK1917-MR SC-67 TFK u 269 tfk 731 2SK1917-MR T151 3 TFK 140 TFK diode
str f 6467 Abstract: STR 6467 2SK191 9vtfr 2SK1917-MR T151 Text: 2SK1917-MR FUJI POWER MOS-FET N-CMANIMEL SILICON POWER MOS-FET F -II SERIES • Features ■ Outline Drawings • Hich speed switching • Low on-resistance • No secondary breakdown • Low driving power • High voltage • VGS—+ 30V Guarantee ■ Applications	OCR Scan	PDF	2SK1917-MR SC-67 IZHTS3033-t str f 6467 STR 6467 2SK191 9vtfr 2SK1917-MR T151
2SK1917-M Abstract: No abstract text available Text: 2SK1917-M SIPMOS FU JI POWER M O S-FET N-CHANNEL SILICON POWER MOS-FET ^ • Features SERIES ■ Outline Drawings • High speed sw itching • Low on-resistance • N o secondary breakdow n • Low driving pow er • High voltage • V gs = ± 3 0 V Guarantee	OCR Scan	PDF	2SK1917-M SC-67 20Kfi)

SDF420 Abstract: D25A Text: Æ ntron PRODUCT DEVICES,INC. CÂTÂLO' N -CHANNEL ENHANCEMENT MOS FET ABSOLUTE MAXIMUM RATINGS PARAMETER 500V, SYMBOL UNITS Drain-source Volt. l Dra in-Gate Vo 1tage (R gs = 1•O M n ) (1) G a te-Souree Vo 1tage Cont inuous Drain Current Continuous (Tc = 25°C)	OCR Scan	PDF	300nS, SDF420 SDF420 MIL-S-19500 D25A
2SK1917 Abstract: SiC POWER MOSFET 2SK1917-M ups electrical symbols A2266 Text: 2SK1917-M S IP M O S F U JI P O W E R M O S -F E T N-CHANNEL SILICON POWER MOS-FET ^ • Features SER IE S ■ Outline Drawings • High speed sw itching • Low o n-resistance • N o secondary breakdow n • Low driving p o w er • High voltage • Vc,s = ± 3 0 V G uarantee	OCR Scan	PDF	2SK1917-M 032tf SC-67 20Kil) 2SK1917 SiC POWER MOSFET ups electrical symbols A2266
DIODE KIV 4 Abstract: DIODE KIV 074I K1393 diode KIV 41 2SK1393 F10V25 DIODE KIV 2 Text: LVXS/'J-X M7-M0SFET LVX SERIES POWER MOSFET WM-j-iim O U T L IN E D IM E N S IO N S 2SK1393 F10V25 250v 10a • Æ fê S i R A TIN G S ■ A b s o lu te M axim u m R a tin g s m Ite m g ft y- S to ra g e T e m p e ra tu re Tsit; C h annel T e m p e ra tu re	OCR Scan	PDF	2SK1393 F10V25) O-220 K1393 DIODE KIV 4 DIODE KIV 074I diode KIV 41 2SK1393 F10V25 DIODE KIV 2
CFL UPS 45 W Abstract: No abstract text available Text: 2SK1917-MR FUJI POWER MOS-FET N-CNANNEL SILICON POWER MOS-FET F - I I • Features S E R I E S ■ Outline Drawings • High speed switching • Low on-resistance • No secondary breakdown • Low driving power • High voltage • V gs = ± 3 0 V Guarantee	OCR Scan	PDF	2SK1917-MR 20Kil) CFL UPS 45 W
Untitled Abstract: No abstract text available Text: PRODUCT CATTALO' N-CHANNEL ENHANCEMENT MOS 500V, 4.5A, 1.5Q SDF430 SDF430 SDF430 JAA JAB JDA FEATURES • RUGGED PACKAGE • HI-REL CONSTRUCTION • CERAMIC EYELETS:J A A .JAB • L E A D BENDING OPTIONS • COPPER CORED 52 ALLOY PINS • LOW IR LOSSES • LOW THERMAL RESISTANCE	OCR Scan	PDF	SDF430 B4B-4311
diode lt 246 Abstract: 1RFP245 Text: IRFP244, IRFP245 IRFP246, IRFP247 HARRIS N-Channel Power MOSFETs Avalanche Energy Rated A u g u s t 1991 Package Features T O -2 4 7 TOP VIEW • 15A and 14A, 275V - 250V • rDS on = 0 .2 8 0 and 0 .3 4 ft D RAIN (T A B ) • Single Pulse Avalanche Energy Rated	OCR Scan	PDF	IRFP244, IRFP245 IRFP246, IRFP247 diode lt 246 1RFP245
2sk1221 Abstract: IR LFN T151 Text: 2SK1221 FUJI POWER MOS-FET N-CHANNEL SILICON POWER MOS-FET F-II • Features SERIES lOutline Drawings • Hich speed switching • Low orvresistance ,4 .5 * « • No secondary breakdown 05.6^ 10$^ '"'i R-“< M \| • Low driving power i • Hich voltage	OCR Scan	PDF	2SK1221 O-22QAB SC-46 Tc-25Â EaTS30 2sk1221 IR LFN T151
Untitled Abstract: No abstract text available Text: 2SK2051-L.S FUJI POWER M OS-FET N-CHANNEL SILICON POWER MOS-FET -F - I I • F eatures ■ Outline Drawings • High speed switching • Lew on-resistance • No secondary breakdown	OCR Scan	PDF	2SK2051-L 20Kfi)
MOSFET 20 NE 50 Z Abstract: 2SK2051 2SK2051-L 43ti Text: 2SK2051-L. S FUJI POW ER M OS-FET N-CHANNEL SILICON POWER MOS-FET F - I I • F eatures S E R I E S Outline Drawings • High speed switching • Lew on-resistance • No secondary breakdown • Lew driving power • High voltage • V S = ±30V Guarantee	OCR Scan	PDF	2SK2051-L. MOSFET 20 NE 50 Z 2SK2051 2SK2051-L 43ti
Untitled Abstract: No abstract text available Text: IOR IRFF Series Devices IRFF Series Data Sheet T h e IR F F D a ta S h e e t d escrib es 19 d evices, 12 N -C h a n n e l and 7 P -C h a n n e l, all con tain ed in the T O -2 0 5 A F T O -3 9 p ac k a g e . T his d a ta s h e e t is a rra n g e d to show com m on tab u la r and g raphical	OCR Scan	PDF

MOSFET P-CH 250V 5A Search Results

MOSFET P-CH 250V 5A Result Highlights (5)

MOSFET P-CH 250V 5A Datasheets Context Search

IRU1239SC

FS10UMA-5A

Untitled

FK10KM-12

class D 500W irs2092

500w class d circuit diagram schematics

AMP7S-100

TP2350B

Untitled

Untitled

Untitled

TFK u 269

str f 6467

2SK1917-M

SDF420

2SK1917

DIODE KIV 4

CFL UPS 45 W

Untitled

diode lt 246

2sk1221

Untitled

MOSFET 20 NE 50 Z

Untitled