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    MOSFET RDS(ON) 0.008 Search Results

    MOSFET RDS(ON) 0.008 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation

    MOSFET RDS(ON) 0.008 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    APM2103SG

    Abstract: STD-020C p channel mosfet
    Text: APM2103SG Dual P-Channel Enhancement Mode MOSFET Features • Pin Description -20V/-2.5A RDS ON = 88mΩ(typ.) @ VGS= -4.5V RDS(ON)= 120mΩ (typ.) @ VGS= -2.5V RDS(ON)= 160mΩ (typ.) @ VGS= -1.8V • • Super High Dense Cell Design Reliable and Rugged P Channel MOSFET


    Original     		PDF APM2103SG -20V/-2 JSC70-8 APM2103 APM2103SG STD-020C p channel mosfet

    STB60NH02L

    Abstract: No abstract text available
    Text: STB60NH02L N-CHANNEL 24V - 0.0085 Ω - 60A D²PAK STripFET III POWER MOSFET TYPE STB60NH02L • ■ ■ ■ ■ ■ ■ VDSS RDS on ID 24 V < 0.0105 Ω 60 A TYPICAL RDS(on) = 0.0085 Ω @ 10 V TYPICAL RDS(on) = 0.012 Ω @ 5 V RDS(ON) * Qg INDUSTRY’s BENCHMARK


    Original     		PDF STB60NH02L O-263) O-263 STB60NH02L

    B75NH02L

    Abstract: STB75NH02L STB75NH02LT4
    Text: STB75NH02L N-CHANNEL 24V - 0.0062Ω -75A - D2PAK STripFET III POWER MOSFET TARGET DATA TYPE STB75NH02L • ■ ■ ■ ■ ■ ■ VDSS RDS on ID 24V < 0.008Ω 75A TYPICAL RDS(on) = 0.0062Ω @ 10 V TYPICAL RDS(on) = 0.008Ω @ 5 V RDS(ON) * Qg INDUSTRY’s BENCHMARK


    Original     		PDF STB75NH02L O-263) O-263 STB75NH02L B75NH02L STB75NH02LT4

    Untitled

    Abstract: No abstract text available
    Text: SQ4483BEEY www.vishay.com Vishay Siliconix Automotive P-Channel 30 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • TrenchFET Power MOSFET - 30 RDS(on) () at VGS = - 10 V 0.0085 • AEC-Q101 Qualifiedc RDS(on) () at VGS = - 4.5 V 0.0200


    Original     		PDF SQ4483BEEY AEC-Q101 SQ4483BEEY-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    b60nh02l

    Abstract: RG211 STB60NH02L STB60NH02LT4 B60NH0
    Text: STB60NH02L N-CHANNEL 24V - 0.0085 Ω - 60A D²PAK STripFET III POWER MOSFET TYPE STB60NH02L • ■ ■ ■ ■ ■ ■ VDSS RDS on ID 24 V < 0.0105 Ω 60 A TYPICAL RDS(on) = 0.0085 Ω @ 10 V TYPICAL RDS(on) = 0.012 Ω @ 5 V RDS(ON) * Qg INDUSTRY’s BENCHMARK


    Original     		PDF STB60NH02L O-263) O-263 STB60NH02L b60nh02l RG211 STB60NH02LT4 B60NH0

    B60NH02L

    Abstract: STB60NH02L STB60NH02LT4 RG-47 B60NH0
    Text: STB60NH02L N-CHANNEL 24V - 0.0085 Ω - 60A D²PAK STripFET III POWER MOSFET TYPE STB60NH02L • ■ ■ ■ ■ ■ ■ VDSS RDS on ID 24 V < 0.0105 Ω 60 A TYPICAL RDS(on) = 0.0085 Ω @ 10 V TYPICAL RDS(on) = 0.012 Ω @ 5 V RDS(ON) * Qg INDUSTRY’s BENCHMARK


    Original     		PDF STB60NH02L O-263) O-263 STB60NH02L B60NH02L STB60NH02LT4 RG-47 B60NH0

    B60NH02L

    Abstract: B60NH0 STB60NH02LT4 STB60NH02L L3 marking b60nh02
    Text: STB60NH02L N-CHANNEL 24V - 0.0085 Ω - 60A D²PAK STripFET III POWER MOSFET TYPE STB60NH02L • ■ ■ ■ ■ ■ ■ VDSS RDS on ID 24 V < 0.0105 Ω 60 A TYPICAL RDS(on) = 0.0085 Ω @ 10 V TYPICAL RDS(on) = 0.012 Ω @ 5 V RDS(ON) * Qg INDUSTRY’s BENCHMARK


    Original     		PDF STB60NH02L O-263) O-263 STB60NH02L B60NH02L B60NH0 STB60NH02LT4 L3 marking b60nh02

    Untitled

    Abstract: No abstract text available
    Text: SQ1905EL www.vishay.com Vishay Siliconix Automotive Dual P-Channel 1.8 V G-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) -8 RDS(on) () at VGS = - 4.5 V 0.6 RDS(on) () at VGS = - 2.5 V 0.932 RDS(on) () at VGS = - 1.8 V 2.27 ID (A) • TrenchFET Power MOSFET


    Original     		PDF SQ1905EL AEC-Q101 OT-363 SC-70 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: STB60NH02L N-CHANNEL 24V - 0.0085 Ω - 60A D²PAK STripFET III POWER MOSFET PRELIMINARY DATA TYPE STB60NH02L • ■ ■ ■ ■ ■ ■ VDSS RDS on ID 24 V < 0.0105 Ω 60 A TYPICAL RDS(on) = 0.0085 Ω @ 10 V TYPICAL RDS(on) = 0.012 Ω @ 5 V RDS(ON) * Qg INDUSTRY’s BENCHMARK


    Original     		PDF STB60NH02L O-263) O-263 STB60NH02L

    STD70NH02LT4

    Abstract: No abstract text available
    Text: STD70NH02L N-CHANNEL 24V - 0.0062Ω - 70A - DPAK STripFET III POWER MOSFET TARGET DATA TYPE STD70NH02L • ■ ■ ■ ■ ■ ■ VDSS RDS on ID 24 V < 0.008Ω 70 A TYPICAL RDS(on) = 0.0062Ω @ 10 V TYPICAL RDS(on) = 0.008Ω @ 5 V RDS(ON) * Qg INDUSTRY’s BENCHMARK


    Original     		PDF STD70NH02L O-252) STD70NH02L O-252 STD70NH02LT4

    STD70NH02LT4

    Abstract: No abstract text available
    Text: STD70NH02L N-CHANNEL 24V - 0.0062Ω - 60A - DPAK STripFET III POWER MOSFET TARGET DATA TYPE STD70NH02L • ■ ■ ■ ■ ■ ■ VDSS RDS on ID 24 V < 0.008Ω 60 A (*) TYPICAL RDS(on) = 0.0062Ω @ 10 V TYPICAL RDS(on) = 0.008Ω @ 5 V RDS(ON) * Qg INDUSTRY’s BENCHMARK


    Original     		PDF STD70NH02L O-252) O-252 STD70NH02L STD70NH02LT4

    D50NH

    Abstract: d50nh02l STD50NH02L STD50NH02L-1 STD50NH02LT4 d50nh02 D50n
    Text: STD50NH02L N-CHANNEL 24V - 0.0085 Ω - 50A DPAK/IPAK STripFET III POWER MOSFET TYPE STD50NH02L • ■ ■ ■ ■ ■ ■ ■ VDSS RDS on ID 24 V < 0.0105 Ω 50 A TYPICAL RDS(on) = 0.0085 Ω @ 10 V TYPICAL RDS(on) = 0.012 Ω @ 5 V RDS(ON) * Qg INDUSTRY’s BENCHMARK


    Original     		PDF STD50NH02L O-251) O-252) O-251 O-252 STD50NH02L D50NH d50nh02l STD50NH02L-1 STD50NH02LT4 d50nh02 D50n

    Untitled

    Abstract: No abstract text available
    Text: STB80NF55-08 N-CHANNEL 55V - 0.0065Ω - 80A D2PAK STripFET POWER MOSFET TYPE STB80NF55-08 • VDSS RDS on ID 55 V <0.008Ω 80 A TYPICAL RDS(on) = 0.0065Ω 3 1 DESCRIPTION This Power Mosfet is the latest development of STMicroelectronics unique “Single Feature


    Original     		PDF STB80NF55-08

    Untitled

    Abstract: No abstract text available
    Text: SQM110P06-8m9L www.vishay.com Vishay Siliconix Automotive P-Channel 60 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • TrenchFET Power MOSFET - 60 RDS(on) () at VGS = - 10 V 0.0089 RDS(on) () at VGS = - 4.5 V 0.0132 ID (A) - 110 Configuration


    Original     		PDF SQM110P06-8m9L AEC-Q101 O-263 SQM110P06-8m9L-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A

    Untitled

    Abstract: No abstract text available
    Text: SQM120P06-07L www.vishay.com Vishay Siliconix Automotive P-Channel 60 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • TrenchFET Power MOSFET - 60 RDS(on) () at VGS = - 10 V 0.0067 RDS(on) () at VGS = - 4.5 V 0.0088 ID (A) - 120 Configuration


    Original     		PDF SQM120P06-07L AEC-Q101 O-263 O-263 SQM120P06-07L-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A

    Untitled

    Abstract: No abstract text available
    Text: SQM120P06-07L www.vishay.com Vishay Siliconix Automotive P-Channel 60 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • TrenchFET Power MOSFET - 60 RDS(on) () at VGS = - 10 V 0.0067 RDS(on) () at VGS = - 4.5 V 0.0088 ID (A) - 120 Configuration


    Original     		PDF SQM120P06-07L AEC-Q101 O-263 SQM120P06-07L-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    Untitled

    Abstract: No abstract text available
    Text: SQM120P06-07L www.vishay.com Vishay Siliconix Automotive P-Channel 60 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • TrenchFET Power MOSFET - 60 RDS(on) () at VGS = - 10 V 0.0067 RDS(on) () at VGS = - 4.5 V 0.0088 ID (A) - 120 Configuration


    Original     		PDF SQM120P06-07L AEC-Q101 O-263 SQM120P06-07L-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A

    SQM120P06-07L

    Abstract: No abstract text available
    Text: SQM120P06-07L www.vishay.com Vishay Siliconix Automotive P-Channel 60 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • TrenchFET Power MOSFET - 60 RDS(on) () at VGS = - 10 V 0.0067 RDS(on) () at VGS = - 4.5 V 0.0088 ID (A) - 120 Configuration


    Original     		PDF SQM120P06-07L AEC-Q101 O-263 O-263 SQM120P06-07L-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 SQM120P06-07L

    MO-193AA

    Abstract: AN7254 AN7260 ITF87052SVT SC-95 TB370 MO-193-AA
    Text: ITF87052SVT Data Sheet File Number 4800.3 Features 3A, 20V, 0.115 Ohm, P-Channel, 2.5V Specified Power MOSFET • Ultra Low On-Resistance - rDS ON = 0.115Ω, VGS = −4.5V - rDS(ON) = 0.120Ω, VGS = −4.0V - rDS(ON) = 0.190Ω, VGS = −2.5V Packaging


    Original     		PDF ITF87052SVT MO-193AA AN7254 AN7260 ITF87052SVT SC-95 TB370 MO-193-AA

    Untitled

    Abstract: No abstract text available
    Text: SQ4483EEY www.vishay.com Vishay Siliconix Automotive P-Channel 30 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • TrenchFET Power MOSFET - 30 RDS(on) () at VGS = - 10 V 0.0085 RDS(on) () at VGS = - 4.5 V 0.0200 ID (A) • ESD Protection: 3000 V


    Original     		PDF SQ4483EEY AEC-Q101 SQ4483EEY-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    SQJ848AEP

    Abstract: No abstract text available
    Text: SQJ848AEP www.vishay.com Vishay Siliconix Automotive N-Channel 40 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • TrenchFET Power MOSFET • 100 % Rg and UIS Tested 40 RDS(on) () at VGS = 10 V 0.0076 RDS(on) () at VGS = 4.5 V 0.0086 ID (A)


    Original     		PDF SQJ848AEP AEC-Q101 SQJ848AEP-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 SQJ848AEP

    STB60NF03L

    Abstract: No abstract text available
    Text: STB60NF03L N-CHANNEL 30V - 0.008Ω - 60A D2PAK STripFET POWER MOSFET TYPE STB60NF03L • ■ VDSS RDS on ID 30 V < 0.01 Ω 60 A TYPICAL RDS(on) = 0.008 Ω LOW THRESHOLD DRIVE 3 DESCRIPTION This Power Mosfet is the latest development of STMicroelectronics unique “Single Feature


    Original     		PDF STB60NF03L STB60NF03L

    Untitled

    Abstract: No abstract text available
    Text: SQ4483EEY www.vishay.com Vishay Siliconix Automotive P-Channel 30 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • TrenchFET Power MOSFET - 30 RDS(on) () at VGS = - 10 V 0.0085 RDS(on) () at VGS = - 4.5 V 0.0200 ID (A) • ESD Protection: 3000 V


    Original     		PDF SQ4483EEY AEC-Q101 SQ4483EEY-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: SQD50N03-06P www.vishay.com Vishay Siliconix Automotive N-Channel 30 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • TrenchFET Power MOSFET • 100 % Rg and UIS Tested 30 RDS(on) () at VGS = 10 V 0.0060 RDS(on) () at VGS = 4.5 V 0.0085


    Original     		PDF SQD50N03-06P AEC-Q101 O-252 SQD50N03-06P-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A