MARKING CODE JF
Abstract: No abstract text available
Text: New Product Si5853CDC Vishay Siliconix P-Channel 20-V D-S MOSFET with Schottky Diode FEATURES MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (Ω) ID (A) 0.104 at VGS = - 4.5 V - 4a - 20 0.144 at VGS = - 2.5 V - 3.6 0.205 at VGS = - 1.8 V -3 • LITTLE FOOT Plus Schottky Power MOSFET
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Si5853CDC
Si5853CDC-T1-E3
08-Apr-05
MARKING CODE JF
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Si5853CDC
Abstract: Vishay DaTE CODE 1206-8 72334/MTN
Text: New Product Si5853CDC Vishay Siliconix P-Channel 20-V D-S MOSFET with Schottky Diode FEATURES MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (Ω) ID (A) 0.104 at VGS = - 4.5 V - 4a - 20 0.144 at VGS = - 2.5 V - 3.6 0.205 at VGS = - 1.8 V -3 • LITTLE FOOT Plus Schottky Power MOSFET
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Si5853CDC
18-Jul-08
Vishay DaTE CODE 1206-8
72334/MTN
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PDF
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Mosfet
Abstract: 2N7002KB
Text: 2N7002KB 60V N-Channel MOSFET Main Product Characteristics VDSS 60V RDS on 2Ω(max.) ID 0.3A SOT-23 Marking and Pin Schematic Diagram Assignment Features and Benefits Advanced MOSFET process technology Special designed for PWM, load switching and
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2N7002KB
OT-23
Mosfet
2N7002KB
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Marking Code S72
Abstract: No abstract text available
Text: 2N7002W N-CHANNEL ENHANCEMENT MODE MOSFET SOT- 323 This device is an N-Channel enhancement-mode MOSFET in the industrystandard, small surface mount SOT-323 SC-70 package. This device is ideal for portable applications where board space is at a premium. 3
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2N7002W
OT-323
SC-70)
OT-323
2N7002W
T/R13
Marking Code S72
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PDF
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SiE854DF-T1-E3
Abstract: SIE854DF
Text: New Product SiE854DF Vishay Siliconix N-Channel 100-V D-S MOSFET FEATURES PRODUCT SUMMARY • TrenchFET Power MOSFET • Ultra Low Thermal Resistance Using RoHS Top-Exposed PolarPAK® Package for COMPLIANT Double-Sided Cooling • Leadframe-Based New Encapsulated Package
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SiE854DF
18-Jul-08
SiE854DF-T1-E3
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PDF
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S7267
Abstract: SIE854DF
Text: New Product SiE854DF Vishay Siliconix N-Channel 100-V D-S MOSFET FEATURES PRODUCT SUMMARY • TrenchFET Power MOSFET • Ultra Low Thermal Resistance Using RoHS Top-Exposed PolarPAK® Package for COMPLIANT Double-Sided Cooling • Leadframe-Based New Encapsulated Package
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SiE854DF
08-Apr-05
S7267
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PDF
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72511
Abstract: SiE850DF
Text: New Product SiE850DF Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY • TrenchFET Gen II Power MOSFET • Ultra Low Thermal Resistance Using RoHS Top-Exposed PolarPAK® Package for COMPLIANT Double-Sided Cooling • Leadframe-Based New Encapsulated Package
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SiE850DF
08-Apr-05
72511
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PDF
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SiE850DF
Abstract: 72511
Text: New Product SiE850DF Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY • TrenchFET Gen II Power MOSFET • Ultra Low Thermal Resistance Using RoHS Top-Exposed PolarPAK® Package for COMPLIANT Double-Sided Cooling • Leadframe-Based New Encapsulated Package
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SiE850DF
18-Jul-08
72511
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PDF
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74248
Abstract: MARKING 66b Si4941EDY
Text: New Product Si4941EDY Vishay Siliconix Dual P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 rDS(on) (Ω) ID (A) 0.021 at VGS = - 10 V - 10a 0.031 at VGS = - 4.5 V - 10a • TrenchFET Power MOSFET • ESD Protection: 2500 V Qg (Typ) RoHS
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Si4941EDY
Si4941EDY-T1-E3
08-Apr-05
74248
MARKING 66b
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PDF
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Untitled
Abstract: No abstract text available
Text: New Product Si4943BDY Vishay Siliconix Dual P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 rDS(on) (Ω) ID (A) 0.019 at VGS = - 10 V - 8.4 0.031 at VGS = - 4.5 V - 6.7 • TrenchFET Power MOSFET • 100 % Rg Tested RoHS APPLICATIONS COMPLIANT
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Si4943BDY
Si4943BDY-T1-E3
18-Jul-08
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PDF
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74248
Abstract: 74248 datasheet Si4941EDY
Text: New Product Si4941EDY Vishay Siliconix Dual P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 rDS(on) (Ω) ID (A) 0.021 at VGS = - 10 V - 10a 0.031 at VGS = - 4.5 V - 10a • TrenchFET Power MOSFET • ESD Protection: 2500 V Qg (Typ) RoHS
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Si4941EDY
Si4941EDY-T1-E3
18-Jul-08
74248
74248 datasheet
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PDF
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Untitled
Abstract: No abstract text available
Text: New Product Si4941EDY Vishay Siliconix Dual P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 rDS(on) (Ω) ID (A) 0.021 at VGS = - 10 V - 10a 0.031 at VGS = - 4.5 V - 10a • TrenchFET Power MOSFET • ESD Protection: 2500 V Qg (Typ) RoHS
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Si4941EDY
Si4941EDY-T1-E3
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: Si7214DN Vishay Siliconix Dual N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) rDS(on) (Ω) 30 ID (A) 0.04 at VGS = 10 V 6.4 0.047 at VGS = 4.5 V 5.9 • TrenchFET Power MOSFET • 100 % Rg Tested • Optimized for High Efficiency Applications
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Si7214DN
Si7214DN-T1-E3
18-Jul-08
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PDF
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74248
Abstract: Si4941EDY 74248 datasheet
Text: New Product Si4941EDY Vishay Siliconix Dual P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 rDS(on) (Ω) ID (A) 0.021 at VGS = - 10 V - 10a 0.031 at VGS = - 4.5 V - 10a • TrenchFET Power MOSFET • ESD Protection: 2500 V Qg (Typ) RoHS
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Si4941EDY
Si4941EDY-T1-E3
11-Mar-11
74248
74248 datasheet
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PDF
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Untitled
Abstract: No abstract text available
Text: New Product Si4943BDY Vishay Siliconix Dual P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 rDS(on) (Ω) ID (A) 0.019 at VGS = - 10 V - 8.4 0.031 at VGS = - 4.5 V - 6.7 • TrenchFET Power MOSFET • 100 % Rg Tested RoHS APPLICATIONS COMPLIANT
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Si4943BDY
Si4943BDY-T1-E3
08-Apr-05
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PDF
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Untitled
Abstract: No abstract text available
Text: New Product SiA415DJ Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 rDS(on) (Ω) ID (A) 0.035 at VGS = - 4.5 V - 12a 0.051 at VGS = - 2.5 V - 12a • TrenchFET Power MOSFET • New Thermally Enhanced PowerPAK® SC70 Package
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SiA415DJ
SC-70-6L-Single
SiA415DJ-T1-E3
08-Apr-05
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PDF
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SUD19P06-60
Abstract: No abstract text available
Text: New Product SUD19P06-60 Vishay Siliconix P-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 60 ID (A)d rDS(on) (Ω) 0.060 at VGS = - 10 V - 19 0.077 at VGS = - 4.5 V - 16.8 • TrenchFET Power MOSFET • 100 % UIS Tested Qg (Typ) RoHS 26 COMPLIANT
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SUD19P06-60
O-252
SUD19P06-60-E3
08-Apr-05
SUD19P06-60
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Untitled
Abstract: No abstract text available
Text: SUP90N08-8m2P Vishay Siliconix N-Channel 75-V D-S MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (Ω) ID (A) Qg (Typ) 75 0.0082 at VGS = 10 V 90d 58 • TrenchFET Power MOSFET • 175 °C Junction Temperature • 100 % Rg and UIS Tested RoHS COMPLIANT
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SUP90N08-8m2P
O-220AB
SUP90N08-8m2P-E3
08-Apr-05
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PDF
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Untitled
Abstract: No abstract text available
Text: SUP90N08-8m2P Vishay Siliconix N-Channel 75-V D-S MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (Ω) ID (A) Qg (Typ) 75 0.0082 at VGS = 10 V 90d 58 • TrenchFET Power MOSFET • 175 °C Junction Temperature • 100 % Rg and UIS Tested RoHS COMPLIANT
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SUP90N08-8m2P
O-220AB
SUP90N08-8m2P-E3
18-Jul-08
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PDF
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ON148
Abstract: 72508
Text: SUP90N06-6m0P Vishay Siliconix N-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (Ω) ID (A) Qg (Typ) 60 0.006 at VGS = 10 V 90d 78.5 • TrenchFET Power MOSFET • 175 °C Junction Temperature • 100 % Rg and UIS Tested RoHS COMPLIANT
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SUP90N06-6m0P
O-220AB
SUP90N06-6m0P-E3
18-Jul-08
ON148
72508
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PDF
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Si3424BDV-T1-E3
Abstract: No abstract text available
Text: New Product Si3424BDV Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 rDS(on) (Ω) ID (A) 0.028 at VGS = 10 V 8a 0.038 at VGS = 4.5 V 7 • TrenchFET Power MOSFET • 100 % Rg Tested Qg (Typ) 6.2 RoHS APPLICATIONS COMPLIANT
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Si3424BDV
Si3424BDV-T1-E3
18-Jul-08
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Si1905BDH
Abstract: marking DJ
Text: New Product Si1905BDH Vishay Siliconix Dual P-Channel 1.8-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) -8 rDS(on) (Ω) ID (A) 0.542 at VGS = - 4.5 V - 0.63 0.798 at VGS = - 2.5 V - 0.52 1.2 at VGS = - 1.8 V - 0.20 • TrenchFET Power MOSFET Qg (Typ) APPLICATIONS
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Si1905BDH
OT-363
SC-70
Si1905BDH-T1-E3
18-Jul-08
marking DJ
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PDF
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Untitled
Abstract: No abstract text available
Text: New Product SiB415DK Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) rDS(on) (Ω) - 30 ID (A)a, f 0.087 at VGS = - 10 V -9 0.158 at VGS = - 4.5 V - 7.2 • TrenchFET Power MOSFET • New Thermally Enhanced PowerPAK® SC-75 Package
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SiB415DK
SC-75
SC-75-6L-Single
SiB415DK-T1-E3
08-Apr-05
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PDF
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Si1905BDH
Abstract: No abstract text available
Text: New Product Si1905BDH Vishay Siliconix Dual P-Channel 1.8-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) -8 rDS(on) (Ω) ID (A) 0.542 at VGS = - 4.5 V - 0.63 0.798 at VGS = - 2.5 V - 0.52 1.2 at VGS = - 1.8 V - 0.20 • TrenchFET Power MOSFET Qg (Typ) APPLICATIONS
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Si1905BDH
OT-363
SC-70
Si1905BDH-T1-E3
08-Apr-05
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