FILM CAPACITOR 0.1/10/100
Abstract: kze capacitor matsushita film capacitor ECQ 10s100 switching regulator 12v sanyo electrolytic capacitor thyristor control circuit diagram variable capacitor Nippon Chemi-Con kze capacitor
Text: TN5D51A Ordering number : ENA1031 SANYO Semiconductors DATA SHEET TN5D51A ExPD Excellent-Performance Power & RF Device Separately-Excited Step-Down Switching Regulator (12V Output type) Features • • • • • • High efficiency (ON resistance 100mΩ, Vertical-type P-ch Power MOSFET).
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TN5D51A
ENA1031
A1031-11/11
FILM CAPACITOR 0.1/10/100
kze capacitor
matsushita film capacitor ECQ
10s100
switching regulator 12v
sanyo electrolytic capacitor
thyristor control circuit diagram
variable capacitor
Nippon Chemi-Con kze capacitor
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Untitled
Abstract: No abstract text available
Text: TN5D41A Ordering number : ENA1029 SANYO Semiconductors DATA SHEET TN5D41A ExPD Excellent-Performance Power & RF Device Separately-Excited Step-Down Switching Regulator (5V Output type) Features • • • • • • High efficiency (ON resistance 100mΩ, Vertical-type P-ch Power MOSFET).
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TN5D41A
ENA1029
A1029-11/11
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HK-12S120-1010
Abstract: kze capacitor HK-12S120 A1060-11 A1060 thyristor control circuit diagram variable capacitor A106011
Text: TN8D41A Ordering number : ENA1060 SANYO Semiconductors DATA SHEET ExPD Excellent-Performance Power & RF Device Separately-Excited Step-Down Switching Regulator (5V Output type) TN8D41A Features • • • • • • High efficiency (ON resistance 80mΩ, Vertical-type P-ch Power MOSFET).
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TN8D41A
ENA1060
A1060-11/11
HK-12S120-1010
kze capacitor
HK-12S120
A1060-11
A1060
thyristor control circuit diagram
variable capacitor
A106011
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A1029
Abstract: kze capacitor sanyo electrolytic capacitor thyristor control circuit diagram variable capacitor
Text: TN5D41A Ordering number : ENA1029 SANYO Semiconductors DATA SHEET TN5D41A ExPD Excellent-Performance Power & RF Device Separately-Excited Step-Down Switching Regulator (5V Output type) Features • • • • • • High efficiency (ON resistance 100mΩ, Vertical-type P-ch Power MOSFET).
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TN5D41A
ENA1029
A1029-11/11
A1029
kze capacitor
sanyo electrolytic capacitor
thyristor control circuit diagram
variable capacitor
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Untitled
Abstract: No abstract text available
Text: TN8D51A Ordering number : ENA0985 SANYO Semiconductors DATA SHEET ExPD Excellent-Performance Power & RF Device TN8D51A Separately-Excited Step-Down Switching Regulator (12V Output type) Features • • • • • • High efficiency (ON resistance 80mΩ, Vertical-type P-ch Power MOSFET).
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TN8D51A
ENA0985
A0985-11/11
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tn8d51a
Abstract: HK-12S120-1010 switching regulator 12v nippon kze 2wl1 IT1326
Text: TN8D51A Ordering number : ENA0985 SANYO Semiconductors DATA SHEET ExPD Excellent-Performance Power & RF Device TN8D51A Separately-Excited Step-Down Switching Regulator (12V Output type) Features • • • • • • High efficiency (ON resistance 80mΩ, Vertical-type P-ch Power MOSFET).
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TN8D51A
ENA0985
A0985-11/11
tn8d51a
HK-12S120-1010
switching regulator 12v
nippon kze
2wl1
IT1326
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kze capacitor
Abstract: thyristor 5a THYRISTOR PRODUCT CATALOG TN5D61A FILM CAPACITOR 0.1/10/100 sanyo electrolytic capacitor Schottky Diode 40V 5A thyristor control circuit diagram
Text: TN5D61A Ordering number : ENA1240 SANYO Semiconductors DATA SHEET TN5D61A ExPD Excellent-Performance Power & RF Device Separately-Excited Step-Down Switching Regulator (24V Output type) Features • • • • • • High efficiency (ON resistance 100mΩ, Vertical-type P-ch Power MOSFET).
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TN5D61A
ENA1240
A1240-11/11
kze capacitor
thyristor 5a
THYRISTOR PRODUCT CATALOG
TN5D61A
FILM CAPACITOR 0.1/10/100
sanyo electrolytic capacitor
Schottky Diode 40V 5A
thyristor control circuit diagram
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matsushita resistor network
Abstract: No abstract text available
Text: TN5D01A Ordering number : ENA1446 SANYO Semiconductors DATA SHEET ExPD Excellent-Performance Power & RF Device Separately-Excited Step-Down Switching Regulator (Variable Output Type) TN5D01A Features • • • • • • High efficiency (ON resistance 100mΩ, Vertical-type P-ch Power MOSFET).
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TN5D01A
ENA1446
A1446-11/11
matsushita resistor network
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Untitled
Abstract: No abstract text available
Text: TN5D51A Ordering number : ENA1031 SANYO Semiconductors DATA SHEET TN5D51A ExPD Excellent-Performance Power & RF Device Separately-Excited Step-Down Switching Regulator (12V Output type) Features • • • • • • High efficiency (ON resistance 100mΩ, Vertical-type P-ch Power MOSFET).
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TN5D51A
ENA1031
A1031-11/11
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Untitled
Abstract: No abstract text available
Text: TN5D41A Ordering number : ENA1029 SANYO Semiconductors DATA SHEET TN5D41A ExPD Excellent-Performance Power & RF Device Separately-Excited Step-Down Switching Regulator (5V Output type) Features • • • • • • High efficiency (ON resistance 100mΩ, Vertical-type P-ch Power MOSFET).
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TN5D41A
ENA1029
A1029-11/11
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matsushita resistor network
Abstract: No abstract text available
Text: TN5D01A Ordering number : ENA1446 SANYO Semiconductors DATA SHEET ExPD Excellent-Performance Power & RF Device TN5D01A Separately-Excited Step-Down Switching Regulator (Variable Output Type) Features • • • • • • High efficiency (ON resistance 100mΩ, Vertical-type P-ch Power MOSFET).
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TN5D01A
ENA1446
A1446-11/11
matsushita resistor network
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kze capacitor
Abstract: ELECTROLYTIC capacitor 3000 barrier network fuse Chemi-Con KZE thyristor regulator matsushita resistor network
Text: TN5D01A Ordering number : ENA1446 SANYO Semiconductors DATA SHEET ExPD Excellent-Performance Power & RF Device Separately-Excited Step-Down Switching Regulator (Variable Output Type) TN5D01A Features • • • • • • High efficiency (ON resistance 100mΩ, Vertical-type P-ch Power MOSFET).
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TN5D01A
ENA1446
A1446-11/11
kze capacitor
ELECTROLYTIC capacitor 3000
barrier network fuse
Chemi-Con KZE
thyristor regulator
matsushita resistor network
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Untitled
Abstract: No abstract text available
Text: TN8D41A Ordering number : ENA1060 SANYO Semiconductors DATA SHEET ExPD Excellent-Performance Power & RF Device Separately-Excited Step-Down Switching Regulator (5V Output type) TN8D41A Features • • • • • • High efficiency (ON resistance 80mΩ, Vertical-type P-ch Power MOSFET).
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TN8D41A
ENA1060
A1060-11/11
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10S100
Abstract: HK-10S100-1010 2wl1 mosfet protect power mosfet 5a 20v
Text: TN5D01A 注文コード No. N A 1 4 4 6 三洋半導体データシート N Excellent-Performance Power & RF Device TN5D01A 他励型降圧スイッチングレギュレータ 可変出力 特長 ・ 高効率 ( オン抵抗 100mΩ, 縦型 P-ch パワー MOSFET)。
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TN5D01A
A1446-8/10
A1446-9/10
3000F
A1446-10/10
10S100
HK-10S100-1010
2wl1
mosfet protect
power mosfet 5a 20v
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A1060
Abstract: A8AI A1060-10 A10602 R312
Text: TN8D41A 注文コード No. N A 1 0 6 0 三洋半導体データシート N TN8D41A Excllent-Performance Power & RF Device 他励型降圧スイッチングレギュレータ 5V 出力 特長 ・高効率(オン抵抗 80mΩ, 縦型 P-ch パワ− MOSFET)。
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TN8D41A
O2908IQ
TC-00001657
A1060-1/10
IT13345
IT13346
A1060-8/10
A1060
A8AI
A1060-10
A10602
R312
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HK-12S120-1010
Abstract: tn8d51a 4 FB TN8D51 IT1326
Text: TN8D51A 注文コード No. N A 0 9 8 5 三洋半導体データシート N TN8D51A Excellent-Performance Power & RF Device 他励型降圧スイッチングレギュレータ 12V 出力 特長 ・高効率(オン抵抗 80mΩ, 縦型 P-ch パワ− MOSFET)。
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TN8D51A
90308IQ
TC-00001590
A0985-1/10
IT12701
IT12702
A0985-8/10
HK-12S120-1010
tn8d51a
4 FB
TN8D51
IT1326
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relay array driver
Abstract: Photovoltaic mosfet driver photovoltaic driver
Text: SIEMENS Data Sheet AT&T Solid-State Relays now manufactured and marketed by Siemens Optoelectronics Division 19000 Homestead Road, Cupertino, CA 95014 LH1262BB/BAC Dual Photovoltaic MOSFET Driver Features Description • ■ ■ ■ ■ The LH1262BB/BAC Photovoltaic MOSFET Driver
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LH1262BB/BAC
LH1262BB/BAC
fiS3b32b
LH1262BB
LH1262BAC
1000-piece
fl23b32fc.
relay array driver
Photovoltaic mosfet driver
photovoltaic driver
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irfip250
Abstract: rectifier 802
Text: International [gagRectifier “ ,SSS1'52 001S31b b23 IRFIP250 INTERNATIONAL RECTIFIER HEXFET Power MOSFET • • • • • • • PD-9.746 IINR Isolated Package DC Package lsolation= 4.0KVDC AC Package lsolation= 2.0KVRMS © Lead to Lead Creepage Dist.= 7.5mm
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001531b
IRFIP250
O-247
rectifier 802
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717 MOSFET
Abstract: bvn mosfet MOSFET SBT
Text: IRLW/I640A Advanced Power MOSFET FEATURES • ■ ■ ■ ■ ■ ■ ■ B V Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area 175» «Operating Temperature Lower Leakage Current : 10 HA Max. @
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IRLW/I640A
134fi
71b4142
717 MOSFET
bvn mosfet
MOSFET SBT
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Untitled
Abstract: No abstract text available
Text: htemational ^Rectifier PD -9.1227 IRFD420 HEXFET Power MOSFET • • • • • • • Dynamic dv/dt Rating Repetitive Avalanche Rated For Automatic Insertion End Stackable Fast Switching Ease of paralleling Simple Drive Requirements V qss = 500V ^ D S o n = 3 - 0 ^
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IRFD420
S54S2
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Untitled
Abstract: No abstract text available
Text: International j “R Rectifier HEXFET Power MOSFET • • • • • • • " MÔSS4S5 üül4ô3b 03T • INR ru-s.»io IRF9520S INTERNATIONAL RECTIFIER LSE D Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Repetitive Avalanche Rated P-Channel
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IRF9520S
SMD-220
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Untitled
Abstract: No abstract text available
Text: International Bag Rectifier HEXFET Power MOSFET • • • • • • 465S45S 001S2b2 b22 ■ INR PD-9.854 IRFIBE30G INTERNATIONAL R E C T I F I E R Isolated Package High Voltage lsolation= 2.5KVRMS Sink to Lead Creepage Dist.= 4.8mm Dynamic dv/dt Rating
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465S45S
001S2b2
IRFIBE30G
O-220
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Untitled
Abstract: No abstract text available
Text: FAIRCHILD S E M IC O N D U C T O R October 1998 tm FDS6675 Single P-Channel, Logic Level, PowerTrench General Description MOSFET Features T his P-Channel Logic Level M O SFET is produced using Fairchild Sem iconductor's advanced PowerTrench process that has been especially tailored to m inimize
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FDS6675
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Untitled
Abstract: No abstract text available
Text: l e l u o m Semiconductor, Inc. TC4423 TC4424 TC4425 3A DUAL HIGH-SPEED POWER MOSFET DRIVERS FEATURES GENERAL DESCRIPTION • ■ ■ The TC4423/4424/4425 are higher output current ver sions of the new TC4426/4427/4428 buffer/drivers, which, in turn, are improved versions of the earlier TC426/427/428
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TC4423
TC4424
TC4425
TC4423/4424/4425
TC4426/4427/4428
TC426/427/428
TC4423/
6T17bD2
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