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    MOSFET SI2300 Search Results

    MOSFET SI2300 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation

    MOSFET SI2300 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Si2300DS

    Abstract: No abstract text available
    Text: New Product Si2300DS Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) ID (A) 0.068 at VGS = 4.5 V 3.6a 0.085 at VGS = 2.5 V 3.4 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


    Original     		PDF Si2300DS 2002/95/EC O-236 OT-23) Si2300DS-T1-GE3 18-Jul-08

    Si2300DS

    Abstract: SI2300 Si2300DS-T1-GE3 P2 MARKING CODE s100111rev
    Text: New Product Si2300DS Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) ID (A) 0.068 at VGS = 4.5 V 3.6a 0.085 at VGS = 2.5 V 3.4 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


    Original     		PDF Si2300DS 2002/95/EC O-236 OT-23) Si2300DS-T1-GE3 18-Jul-08 SI2300 P2 MARKING CODE s100111rev

    Untitled

    Abstract: No abstract text available
    Text: New Product Si2300DS Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) ID (A) 0.068 at VGS = 4.5 V 3.6a 0.085 at VGS = 2.5 V 3.4 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


    Original     		PDF Si2300DS 2002/95/EC O-236 OT-23) Si2300DS-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A

    si2300

    Abstract: Si2300DS S10-0258
    Text: SPICE Device Model Si2300DS Vishay Siliconix N-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C


    Original     		PDF Si2300DS 18-Jul-08 si2300 S10-0258

    Untitled

    Abstract: No abstract text available
    Text: SPICE Device Model Si2300DS www.vishay.com Vishay Siliconix N-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The sub-circuit model is extracted and optimized over the -55 °C


    Original     		PDF Si2300DS 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    SI2300

    Abstract: si2300 sot-23 mosfet si2300
    Text: SI2300 20V N-Channel Enhancement Mode MOSFET VDS= 20V RDS ON , Vgs@ 4.5V, Ids@ 3.0A RDS(ON), Vgs@ 2.5V, Ids@ 2.0A 70m Ω 80m Ω Features Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance High Power and Current handing capability


    Original     		PDF SI2300 OT-23 SI2300 si2300 sot-23 mosfet si2300

    smd diode 319

    Abstract: SI2300 smd transistor 888 SMD TRANSISTOR mosfet si2300 mosfet si2300 1A smd mosfet ki2300 78 DIODE SMD mosfet vgs 5v si2300 sot-23
    Text: MOSFET IC SMD Type N-Channel Enhancement Mode Field Effect Transistor KI2300 SI2300 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features VDS=20V,RDS(ON)=75m @VGS=1.8V,ID=1.0A 1 0.55 @VGS=2.5V,ID=4.0A +0.1 1.3-0.1 VDS=20V,RDS(ON)=60m +0.1 2.4-0.1 @VGS=4.5V,ID=5.0A


    Original     		PDF KI2300 SI2300) OT-23 smd diode 319 SI2300 smd transistor 888 SMD TRANSISTOR mosfet si2300 mosfet si2300 1A smd mosfet 78 DIODE SMD mosfet vgs 5v si2300 sot-23

    si7121

    Abstract: Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836
    Text: V ishay I ntertechnology, I nc . MOSFETs - Comprehensive Power MOSFET Technology Range I INNOVAT AND TEC O L OGY Vishay Siliconix N HN Power mosfets O 19 62-2012 Low to High Voltage Power MOSFETs ChipFET P o w e r PA K ® P o l a r PA K ® P o w e r PA I R ®


    Original     		PDF Mediu33-4-9337-2727 VMN-SG2127-1210 si7121 Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836

    si2300

    Abstract: Si2300DS A 0412 MOSFET AN609
    Text: Si2300DS_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,


    Original     		PDF Si2300DS AN609, 15-Jan-10 si2300 A 0412 MOSFET AN609