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    MOSFET TO-92 N-CHANNEL 20 VOLT Search Results

    MOSFET TO-92 N-CHANNEL 20 VOLT Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation
    TK090U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 30 A, 0.09 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    MOSFET TO-92 N-CHANNEL 20 VOLT Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    MOSFET P-channel SOT-23

    Abstract: NTD80N02 NTD18N06 NTMS3P03R2 MLD1N06CL NTHD5904N
    Text: Power MOSFET Numeric Data Sheet Listing Chapter 1: Power MOSFET Data Sheets Device Function Page 2N7000 . . . . . . . . . . . . . . . . . . . . . Small Signal MOSFET 200 mAmps, 60 Volts . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26


    Original     		PDF 2N7000 2N7002L MOSFET60 OT-23 BS107, BS107A BS108 BS170 NUD3124 NUD3160 MOSFET P-channel SOT-23 NTD80N02 NTD18N06 NTMS3P03R2 MLD1N06CL NTHD5904N

    signal mosfet

    Abstract: 22LL
    Text: VN2222LL Preferred Device Small Signal MOSFET 150 mAmps, 60 Volts N−Channel TO−92 http://onsemi.com Features • Pb−Free Packages are Available* 150 mA, 60 V RDS on = 7.5 W MAXIMUM RATINGS Rating N−Channel Symbol Value Unit Drain −Source Voltage


    Original     		PDF VN2222LL signal mosfet 22LL

    bs108 mosfet

    Abstract: mosfet to92 high current BS108 BS-108
    Text: BS108 Preferred Device Small Signal MOSFET 250 mAmps, 200 Volts, Logic Level N−Channel TO−92 http://onsemi.com This MOSFET is designed for high voltage, high speed switching applications such as line drivers, relay drivers, CMOS logic, microprocessor or TTL to high voltage interface and high voltage


    Original     		PDF BS108 bs108 mosfet mosfet to92 high current BS108 BS-108

    PA-5R0H474-R

    Abstract: LTC3535 LPS4012 LTC3535EDD MOS6020 MSS5131 MIP3226D3R3M LTC3528-2
    Text: LTC3535 Dual Channel 550mA 1MHz Synchronous Step-Up DC/DC Converter DESCRIPTION FEATURES n n n n n n n n n n n n n n n Two Independent Step-Up Converters Each Channel Delivers 3.3V at 100mA from a Single Alkaline/NiMH Cell or 3.3V at 200mA from Two Cells VIN Start-Up Voltage: 680mV


    Original     		PDF LTC3535 550mA 100mA 200mA 680mV 12-Lead LTC3537 600mA QFN-16 PA-5R0H474-R LTC3535 LPS4012 LTC3535EDD MOS6020 MSS5131 MIP3226D3R3M LTC3528-2

    BS108 relay driver

    Abstract: BS108ZL1G BS108 BS108G BS108ZL1 2ID-250 BS108D
    Text: BS108 Preferred Device Small Signal MOSFET 250 mAmps, 200 Volts, Logic Level N−Channel TO−92 http://onsemi.com This MOSFET is designed for high voltage, high speed switching applications such as line drivers, relay drivers, CMOS logic, microprocessor or TTL to high voltage interface and high voltage


    Original     		PDF BS108 BS108/D BS108 relay driver BS108ZL1G BS108 BS108G BS108ZL1 2ID-250 BS108D

    NTE7232

    Abstract: NTE2682 NTE2684 NTE7239 pdf/ES-F8DB-14A464-A
    Text: NTE SEMICONDUCTORS ADDED SINCE MAY 2013 NTE PART NO. DESCRIPTION Datasheet Link NTE573-1 RECTIFIERS Schottky Barrier Rectifier, 100V, 5 Amp, DO‐201AD Case NTE573‐2 Schottky Barrier Rectifier, 200V, 5 Amp, DO‐201AD Case


    Original     		PDF NTE573â 201ADÂ com/specs/500to599/pdf/nte573â NTE639 214AAÂ NTE7232 NTE2682 NTE2684 NTE7239 pdf/ES-F8DB-14A464-A

    vn2410l

    Abstract: VN2410* mosfet
    Text: VN2410L Preferred Device Small Signal MOSFET 200 mAmps, 240 Volts N−Channel TO−92 http://onsemi.com MAXIMUM RATINGS Rating Symbol Value Unit Drain −Source Voltage VDSS 240 Vdc Drain −Gate Voltage VDGR 240 Vdc Gate −Source Voltage − Continuous − Non−repetitive tp ≤ 50 µs


    Original     		PDF VN2410L vn2410l VN2410* mosfet

    bs108 mosfet

    Abstract: BS108 relay driver BS108 BS108ZL1
    Text: BS108 Preferred Device Small Signal MOSFET 250 mAmps, 200 Volts, Logic Level N–Channel TO–92 http://onsemi.com This MOSFET is designed for high voltage, high speed switching applications such as line drivers, relay drivers, CMOS logic, microprocessor or TTL to high voltage interface and high voltage


    Original     		PDF BS108 r14525 BS108/D bs108 mosfet BS108 relay driver BS108 BS108ZL1

    BS170

    Abstract: MOSFET bs170 bs170 TO-92 pin diagram of bs170 TO-226 MARKING bs170 TO226 BS170RLRA BS170RLRAG to-92 mosfet
    Text: BS170 Preferred Device Small Signal MOSFET 500 mA, 60 Volts N−Channel TO−92 TO−226 Features • Pb−Free Package is Available* 500 mA, 60 Volts RDS(on) = 5.0 W MAXIMUM RATINGS Rating Symbol Value Unit VDS 60 Vdc VGS VGSM ± 20 ± 40 Vdc Vpk Drain Current (Note)


    Original     		PDF BS170 O-226) o1982. BS170/D BS170 MOSFET bs170 bs170 TO-92 pin diagram of bs170 TO-226 MARKING bs170 TO226 BS170RLRA BS170RLRAG to-92 mosfet

    complementary MOSFET 2sk

    Abstract: 2SK series transistor 2sk 2sk 2sj complementary mosfet 2sk to-92 2sk mosfet nec mosfet 2SK type UMOS-2 TO-220ISO
    Text: Low voltage MOSFET Short reference guide Introduction As a leading supplier of PowerMOSFET devices, NEC Electronics offers an extensive range of over 500 different devices suitable for 0.25 µm UMOS-4 28M cell/cm2 to provide low on-resistance RDS(on), avalanche capability, low gate charge and lower leakage current.


    Original     		PDF D17356EE1V0PF00 complementary MOSFET 2sk 2SK series transistor 2sk 2sk 2sj complementary mosfet 2sk to-92 2sk mosfet nec mosfet 2SK type UMOS-2 TO-220ISO

    22LL

    Abstract: VN2222LL VN2222LLG to-92 mosfet VN2222LLRL VN2222LLRLRA VN2222LLRLRAG VN2222LLRLRM vn2222ll mosfet
    Text: VN2222LL Preferred Device Small Signal MOSFET 150 mAmps, 60 Volts N−Channel TO−92 Features • Pb−Free Packages are Available* 150 mA, 60 V RDS on = 7.5 W MAXIMUM RATINGS Rating N−Channel Symbol Value Unit Drain −Source Voltage VDSS 60 Vdc Drain−Gate Voltage (RGS = 1.0 MW)


    Original     		PDF VN2222LL VN2222LL/D 22LL VN2222LL VN2222LLG to-92 mosfet VN2222LLRL VN2222LLRLRA VN2222LLRLRAG VN2222LLRLRM vn2222ll mosfet

    2SK1020

    Abstract: 2SK1020 equivalent CTU100
    Text: 2SK1020 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET F- II SERIES Outline Drawings Features High current Low on-resistance No secondary breakdown Low driving power High voltage VGSS=±30V Guarantee TO-3PL ø3.2 ±0.2 5 ±0.3 3 ±0.2 2 ±0.2 1.1 ±0.2 Applications


    Original     		PDF 2SK1020 2SK1020 2SK1020 equivalent CTU100

    SMBJ5A

    Abstract: irf640m LM358 laser driver sod ic ld1117 3.3v 4801 MOSFET 220ac to 5v ac inverter CIRCUIT DIAGRAM ST2310HI circuit diagram adsl modem board hp laser printer 600v TL431 928
    Text: Computer Discretes & Standard ICs Selection Guide MOTHERBOARDS AND CONNECTING PORTS Video Port Arc-ing Protection DALC Parallel Port Termination ST1284 Audio Op-Amp Serial Port RS232 Interface ESDA PS/2 Port Termination KBMF Processor VRM MOSFET SCHOTTKY Voltage


    Original     		PDF ST1284 RS232 DDR110 PowerSO-10, ISOWATT218, SMBJ5A irf640m LM358 laser driver sod ic ld1117 3.3v 4801 MOSFET 220ac to 5v ac inverter CIRCUIT DIAGRAM ST2310HI circuit diagram adsl modem board hp laser printer 600v TL431 928

    BC107 to92

    Abstract: BC107 characteristic bs107 BC107 to-92
    Text: BS107, BS107A Preferred Device Small Signal MOSFET 250 mAmps, 200 Volts N−Channel TO−92 Features http://onsemi.com • Pb−Free Package is Available* 250 mA, 200 V RDS on = 14 W (BS107) RDS(on) = 6.4 W (BS107A) N−Channel MAXIMUM RATINGS Rating Drain −Source Voltage


    Original     		PDF BS107, BS107A BS107) BS107A) BS107 BS107G BS107RLRA BS107RL1 BC107 to92 BC107 characteristic BC107 to-92

    Untitled

    Abstract: No abstract text available
    Text: BS108 Small Signal MOSFET 250 mAmps, 200 Volts, Logic Level N−Channel TO−92 http://onsemi.com This MOSFET is designed for high voltage, high speed switching applications such as line drivers, relay drivers, CMOS logic, microprocessor or TTL to high voltage interface and high voltage


    Original     		PDF BS108 BS108/D

    P-MOSFET

    Abstract: mosfet 4800 micron resistor 0.6 um cmos process 3-Micron-CMOS-Process 4800 mosfet MOSFET dynamic parameters 1.2 Micron CMOS Process Family
    Text: 3 Micron CMOS Process Family  June 1995 Process Parameters Features • Double Poly / Double Metal • 6 µm Poly Pitch; 7 µm Metal Pitch • 7 Volts Maximum Operating Voltage • 2.7~3.6 Volts Low Voltage Option • 10 Volts High Voltage Option • Low TCR Resistor Module


    Original     		PDF

    CMOS Process Family

    Abstract: 0.6 um cmos process
    Text: 3 Micron CMOS Process Family Features Process parameters 3µm • LOVMOS Process [3Volts 2.7~3.6 Low Voltage Option] Units • Double Poly / Double Metal 10 & 5 & 3volts • 6 µm Poly Pitch; 7 µm Metal Pitch Metal I pitch (line/space) 3/4 µm • 7 Volts Maximum Operating Voltage


    Original     		PDF

    0.6 um cmos process

    Abstract: CMOS Process Family micron resistor TCR 1.2 Micron CMOS Process Family
    Text: 3 Micron CMOS Process Family  February 1996 Features • • • • • • Process Parameters LOVMOS Process 2.7~3.6 Volts Low Voltage Option Double Poly / Double Metal 6 µm Poly Pitch; 7 µm Metal Pitch 7 Volts Maximum Operating Voltage 10 Volts High Voltage Option


    Original     		PDF fam10-04 0.6 um cmos process CMOS Process Family micron resistor TCR 1.2 Micron CMOS Process Family

    2N7000 MOSFET PIN DETAILS

    Abstract: No abstract text available
    Text: 2N7000 Preferred Device Small Signal MOSFET 200 mAmps, 60 Volts N−Channel TO−92 Features http://onsemi.com • Pb−Free Packages are Available* 200 mAMPS 60 VOLTS RDS on = 5 W MAXIMUM RATINGS Rating Symbol Value Unit Drain Source Voltage VDSS 60 Vdc


    Original     		PDF 2N7000 2N7000 2N7000G 2N7000RLRA 2N7000RLRAG 2N7000RLRM 2N7000RLRMG 2N7000RLRP 2N7000 MOSFET PIN DETAILS

    SMD R5D diode

    Abstract: Zener diode smd marking code C24 smd MARKING r5b marking code R38 SMD Transistor smd marking code r55 R5C MARKING CODE SOT23 SMD r2f smd marking R5D SMD code R5D SMD r5d
    Text: SMB120 Nine-Channel DC/DC Digitally Programmable System Power Manager FEATURES & APPLICATIONS Preliminary information INTRODUCTION • Digital programming of all major parameters via I2C interface and non-volatile memory o Output voltage set point o Output power-up/down sequencing


    Original     		PDF SMB120 SMD R5D diode Zener diode smd marking code C24 smd MARKING r5b marking code R38 SMD Transistor smd marking code r55 R5C MARKING CODE SOT23 SMD r2f smd marking R5D SMD code R5D SMD r5d

    Untitled

    Abstract: No abstract text available
    Text: SMB120 Nine-Channel DC/DC Digitally Programmable System Power Manager FEATURES & APPLICATIONS Preliminary information INTRODUCTION • Digital programming of all major parameters via I2C interface and non-volatile memory o Output voltage set point o Output power-up/down sequencing


    Original     		PDF SMB120

    TSSOP-16

    Abstract: No abstract text available
    Text: Preliminary EUP2618 Triple Adjustable Output TFT-LCD DC-DC Converters DESCRIPTION FEATURES The EUP2618 triple-output DC-DC converter provides the regulated voltages required by active-matrix, thin-film transistor TFT liquid-crystal displays (LCDs). One high-power DC-DC converter and two low-power charge


    Original     		PDF EUP2618 EUP2618 DS2618 TSSOP-16 TSSOP-16

    2N7000 MOSFET PIN DETAILS

    Abstract: 2N7000ZL1G 2n7000 mosfet 2n7000 2N7000G 2N7000RLRA 2N7000RLRAG 2N7000RLRM 2N7000RLRMG 2N7000RLRP
    Text: 2N7000 Preferred Device Small Signal MOSFET 200 mAmps, 60 Volts N−Channel TO−92 Features http://onsemi.com • Pb−Free Packages are Available* 200 mAMPS 60 VOLTS RDS on = 5 W MAXIMUM RATINGS Rating Symbol Value Unit Drain Source Voltage VDSS 60 Vdc


    Original     		PDF 2N7000 2N7000/D 2N7000 MOSFET PIN DETAILS 2N7000ZL1G 2n7000 mosfet 2n7000 2N7000G 2N7000RLRA 2N7000RLRAG 2N7000RLRM 2N7000RLRMG 2N7000RLRP

    2sk mosfet

    Abstract: 2sk 30A MOSFET 25C1 2SK1020 P15A
    Text: 2SK1020 FUJI POWER MOS-FET N-CHANNEL SILICON POWER MOS-FET F -II SERIES • Features lOutline Drawings • High speed switching • Low on-resistance • No secondary breakdown • Low driving power • High voltage • V g ss~ ± 30V Guarantee ■Applications


    OCR Scan     		PDF 2SK1020 2sk mosfet 2sk 30A MOSFET 25C1 2SK1020 P15A