j340 motorola
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line MRF21090 MRF21090S RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for W–CDMA base station applications at frequencies from 2110 to 2170 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier
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MRF21090
MRF21090S
j340 motorola
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940 629 MOTOROLA 220
Abstract: MOTOROLA POWER 726 MOS FET TRANSISTOR MRF158 VK200 20WATTS
Text: MOTOROLA Order this document by MRF158/D SEMICONDUCTOR TECHNICAL DATA The RF TMOS Line Power Field Effect Transistor MRF158 N–Channel Enhancement Mode Designed for wideband large–signal amplifier and oscillator applications to 500 MHz. • Guaranteed 28 Volt, 500 MHz Performance
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MRF158/D
MRF158
940 629 MOTOROLA 220
MOTOROLA POWER 726 MOS FET TRANSISTOR
MRF158
VK200
20WATTS
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m33 tf 130
Abstract: BF113 is373 GRS-003 GRS003 Mje 1533 1803e 203FF 1115 R1B H645
Text: Order this document by AN1400/D AN1400 Application Note MC10/100H640 Clock Driver Family I/O SPICE Modelling Kit Prepared by Todd Pearson Debbie Beckwith ECL Applications Engineering This application note provides the SPICE information necessary to accurately model system interconnect
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AN1400/D
AN1400
MC10/100H640
MC10H600
MC10H640,
MC10/100H64
m33 tf 130
BF113
is373
GRS-003
GRS003
Mje 1533
1803e
203FF
1115 R1B
H645
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d6n02
Abstract: D6N02H AN569 MMDF6N02HD MMDF6N02HDR2 SMD310
Text: MOTOROLA Order this document by MMDF6N02HD/D SEMICONDUCTOR TECHNICAL DATA Designer's Data Sheet MMDF6N02HD Medium Power Surface Mount Products Motorola Preferred Device TMOS Dual N-Channel Field Effect Transistors DUAL TMOS POWER MOSFET 6.0 AMPERES 20 VOLTS
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MMDF6N02HD/D
MMDF6N02HD
d6n02
D6N02H
AN569
MMDF6N02HD
MMDF6N02HDR2
SMD310
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940 629 MOTOROLA 113
Abstract: Nippon capacitors
Text: MOTOROLA Order this document by MRF158/D SEMICONDUCTOR TECHNICAL DATA Power Field Effect Transistor MRF158 N–Channel Enhancement Mode Designed for wideband large–signal amplifier and oscillator applications to 500 MHz. • Guaranteed 28 Volt, 500 MHz Performance
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MRF158/D
MRF158
940 629 MOTOROLA 113
Nippon capacitors
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731 motorola
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF TMOS Line Power Field Effect Transistor MRF158 N–Channel Enhancement Mode Designed for wideband large–signal amplifier and oscillator applications to 500 MHz. • Guaranteed 28 Volt, 500 MHz Performance Output Power = 2.0 Watts
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MRF158
MRF158
731 motorola
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907a transistor
Abstract: 907A CH3E
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Quad General Purpose Transistors MMPQ2907 MMPQ2907A PNP Silicon E ^ r \r - 1 H J Ü E -l Q — H] - iw - l QJ T — 2 CASE 751B -05, STYLE 4 S O -16 MAXIMUM RATINGS Rating C o lle c to r-E m itte r Voltage Symbol MMPQ2907
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MMPQ2907
MMPQ2907A
MMPQ2907
907a transistor
907A
CH3E
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Untitled
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Single Silicon Sw itching Diodes These Silicon Epitaxial Planar Diodes are designed for use in ultra high speed switching applications. These devices are housed in the SC-59 package which is designed for low power surface mount applications.
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SC-59
M1MA151KT1
M1MA152KT1
M1MA151/2KT1
Inch/3000
M1MA151/2KT3
inch/10
b3b7555
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motorola diode marking code
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Single S ilicon S w itching Diodes These Silicon Epitaxial Planar Diodes are designed for use in ultra high speed switching applications. These devices are housed in the SC-59 package which is designed for low power surface mount applications.
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SC-59
M1MA151/2KT1
inch/3000
M1MA151/2KT3
inch/10
152KT1
M1MA151KT1
M1MA152KT1
motorola diode marking code
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MTH8N55
Abstract: DIODE MOTOROLA B33 MTM8N60 3fc relay 000073S AN569 MTH8N60 U055 TO 521 MH
Text: MOTOROLA SC IME D I XSTRS/R F b3 b?a SM O Oâ ^a bT 3 I S f -1 5 MOTOROLA • SEMICONDUCTOR TECHNICAL DATA M T H 8N 55 MTH8ÏM60 M TM 8N60 Designer's Data Sheet Power Field Effect Transistor N-Channel Enhancem ent-M ode S ilic o n G ate T M O S T h e s e T M O S P o w e r FETs are d e s ig n e d fo r h ig h v o lta g e , high
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MTH8N55
MTH8N60
MTM8N60
Y145M.
O-218AC
DIODE MOTOROLA B33
3fc relay
000073S
AN569
U055
TO 521 MH
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Transistor C G 774 6-1
Abstract: C G 774 6-1 1041T060
Text: I MOTOROLA SC XSTRS/R F 4bE » • b3b?2SM 00=14722 T -3 MOTOROLA 3 ' 0 T ■flOTb 5 ■ I SEMICONDUCTOR I TECHNICAL DATA The RF Line HIGH FREQUEN CY TRANSISTOR NPN SILICON HIGH FREQUENCY TRANSISTOR NPN SILICO N designed specifically for broadband applications requiring low
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A502C
Abstract: A504C TTL 555 a529
Text: fl MOTOROLA INTEGRATED CIRCUITS 500 Series 400 Series TTL I integrated circuits comprise a family of transistortransistor logic designed for general purpose digital applica tions. The family has a medium operating speed 20 MHz clock rate , good e xternal noise
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MOTOROLA POWER TRANSISTOR lc 945
Abstract: zener ap 474 940 629 MOTOROLA 113
Text: MOTOROLA O rder this docum ent by M RF158/D SEMICONDUCTOR TECHNICAL DATA The RF TMOS Line Power Field Effect Transistor MRF158 N-Channel Enhancement Mode D esigned fo r w id e b a n d la rg e -s ig n a l am p lifie r and o scilla to r ap plicatio ns to 500 MHz.
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RF158/D
MOTOROLA POWER TRANSISTOR lc 945
zener ap 474
940 629 MOTOROLA 113
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CA521
Abstract: 576/C
Text: MOTOROLA INTEGRATED CIRCUITS 500 Series 400 Series TTL I integrated circuits comprise a family of transistortra n s is to r logic d e sign e d for general purpose digital applica tions. The family has a medium operating speed 20 MHz clock ra te , go o d e x te rn a l n o ise
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14-LEAD
16-LEAD
10-LEAD
24-LEAD
CA521
576/C
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Untitled
Abstract: No abstract text available
Text: M OTOROLA Order this document by MMDF3C03HD/D SEMICONDUCTOR TECHNICAL DATA Advance Information M M D F 3C 03H D Medium Power Surface Mount Products Motorola Preferred Device C om plem entary TMOS Field E ffect Transistors COMPLEMENTARY DUAL TMOS POWER FET
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MMDF3C03HD/D
b3b72S4
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RF3094
Abstract: RF3096 RF3095
Text: MOTOROLA SC XSTRS/R F MOTOROLA SEMICONDUCTOR Mb E D • b3b?254 OG^bflS T 3 1 - 2 3 I I M0 T b Order this data sheet by RF3094/D a TECHNICAL DATA RF3094 RF3095 RF3096 The RF Line M ic ro w a v e Linear P ow er
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RF3094/D
RF3094
RF3095
RF3096
RF3094
RF3095
RF3096
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Untitled
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MC54/74HCT35 Product Preview J SUFFIX CERAMIC CASE 632-08 Hex Noninverting Buffer w ith Open-Drain Outputs and LSTTLCom patible Inputs N SUFFIX PLASTIC CASE 646-06 High-Perform ance Silicon-G ate C M O S The MC54/74HCT35 may be used as a level converter fo r interfacing TTL or
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MC54/74HCT35
MC54/74HCT35
HCT35
HCT05,
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Untitled
Abstract: No abstract text available
Text: MOTOROLA O rder this docum ent by M M D F6N02HD/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet MMDF6N02HD Medium Power Surface Mount Products Motorola Preferred Device TMOS Dual N-Channel Field Effect Transistors DUAL TMOS POWER MOSFET 6.0 AMPERES
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F6N02HD/D
MMDF6N02HD
DF6N02HD/D
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MD2369
Abstract: md2905 82440 MD2369A MD2369AF MD2369B MD2369BF MD2369F MD2904 MQ2369
Text: NO T O R O L A SC -CXSTRS/R 6367254 FJ ^ MOTOROLA SC CXSTRS/R D E | b 3h7a S 4 96 D F ODfl aH4 D 82440 D T - Z 7-^-7 MAXIMUM RATINGS Sym bol Value Collector-Emitter Voltage VCEO 15 Vdc - Collector-Base Voltage VCBO 40 Vdc Emitter-Base Voltage VEBO 5.0 Vdc
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L3b7a54
ODfla44D
MD2369
MQ2369
MD2369F
md2905
82440
MD2369A
MD2369AF
MD2369B
MD2369BF
MD2904
MQ2369
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lr 2905 transistor
Abstract: lr 2905 z LR 2905 md2904 ic 2904 MD2905
Text: M O T O R O L A SC -CXSTRS/R F> 6367254 MOTOROLA D E | t , 3 b 7 E S 4 0 D A B 4 4 3 0 |" SC XSTRS/R F 9 6D 8 2 4 4 3 _ T M A X IM U M RATINGS Sym bol M D 2 9 0 4 ,F M D 29Q 5,F M Q 29 0 4 C ollec to r-E m itter V o lta g e VCEO 40 C ollector-B ase V o ltag e
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MD2904
MD2905
MQ2904,
MQ2905A
654-0T
lr 2905 transistor
lr 2905 z
LR 2905
ic 2904
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Untitled
Abstract: No abstract text available
Text: MAXIMUM RATINGS Rating Value Supply Voltage - Continuous SUHL/TTL +8.0 Vdc 4.5 to 6.0 Vdc fnput Voltage - V.n +5.5 Vdc Output Voltage - Vout +5.5 Vdc Operating Temperature Range -55 t o +125 °C Storage Temperature Range -65 t o +150 °c Maximum Junction Temperature
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14-LEAD
16-LEAD
10-LEAD
24-LEAD
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502 nand
Abstract: No abstract text available
Text: LANSDALE SEMICONDUCTOR 17E D • 531^03 QDODSTS 7 ■ T~£Z-Q1 "T-Sl'OR T~H3-i5 T - M 07-07 T-V6-01-13 T-V6-07-08 - Rating Supply Voltage - Continuous 500/550 Series Vdc +8.0 Supply Operating Voltage Range MOTOROLA INTEGRATED CIRCUITS 400 Series 0 to +75 ° C
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T-V6-01-13
T-V6-07-08
14-LEAD
16-LEAD
10-LEAD
502 nand
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LA 4301
Abstract: No abstract text available
Text: LA N S D A L E S E M I C O N D U C T O R 32E D • £3^003 O O O G B M R T ■ LTE T-43-01 MAXIMUM RATINGS Rating Value +8.0 Vdc 4.5 to 6.0 Vdc fnput Voltage - V ln +5.5 Vdc Output Voltage - Voul +5.5 Vdc Operating Temperature Range -55 to +125 °C Storage Temperature Range
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T-43-01
14-LEAD
16-LEAD
10-LEAD
24-LEAD
LA 4301
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MC34167T equivalent
Abstract: CHK1050 MJE130 PT3595 elmaco transformer MC34167 application notes MJE13005 MC34167 Application Notes 5930B 5925B
Text: MC34167 MC33167 MOTOROLA SEMICONDUCTOR TECHNICAL DATA Advance Information Power Switching Regulator POWER SWITCHING REGULATOR The MC34167, MC33167 series are high performance fixed frequency power switching regulators that contain the primary functions required for DC-to-DC
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MC34167
MC33167
MC34167,
MC33167
f34167
MJE13005
5903B
MBR20100CT
5925B
MC34167T equivalent
CHK1050
MJE130
PT3595
elmaco transformer
application notes MJE13005
MC34167 Application Notes
5930B
5925B
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