motorola an721 application
Abstract: Motorola 2N6083 MOTOROLA BOOK POWER CONVERSION Diode jx4 2N5642 2N6083 AN721 MTT-19 shunt reactor motorola an-282a application
Text: Freescale Semiconductor, Inc. MOTOROLA Order this document by AN721/D SEMICONDUCTOR APPLICATION NOTE AN721 NOTE: The theory in this application note is still applicable, but some of the products referenced may be discontinued. Impedance Matching Networks Applied to RF Power Transistors
|
Original
|
PDF
|
AN721/D
AN721
motorola an721 application
Motorola 2N6083
MOTOROLA BOOK POWER CONVERSION
Diode jx4
2N5642
2N6083
AN721
MTT-19
shunt reactor
motorola an-282a application
|
AN721
Abstract: EE3990 118-136 mhz AN282A Design of H. F. Wideband Power Transformers 2N6083 broadband impedance transformation 2N5642 shunt reactor Motorola 2N6083
Text: Order this document by AN721/D MOTOROLA SEMICONDUCTOR APPLICATION NOTE AN721 IMPEDANCE MATCHING NETWORKS APPLIED TO RF POWER TRANSISTORS Prepared by: B. Becciolini 1. INTRODUCTION LS Some graphic and numerical methods of impedance matching will be reviewed here. The examples given will refer
|
Original
|
PDF
|
AN721/D
AN721
AN721
EE3990
118-136 mhz
AN282A
Design of H. F. Wideband Power Transformers
2N6083
broadband impedance transformation
2N5642
shunt reactor
Motorola 2N6083
|
2N6083
Abstract: AN721/D Diode jx4 2N5642 AN721 MTT-19 Motorola 2N6083 motorola an721 application 2n6083 an721 AN282A
Text: Order this document by AN721/D MOTOROLA SEMICONDUCTOR APPLICATION NOTE AN721 IMPEDANCE MATCHING NETWORKS APPLIED TO RF POWER TRANSISTORS Prepared by: B. Becciolini 1. INTRODUCTION LS Some graphic and numerical methods of impedance matching will be reviewed here. The examples given will refer
|
Original
|
PDF
|
AN721/D
AN721
2N6083
AN721/D
Diode jx4
2N5642
AN721
MTT-19
Motorola 2N6083
motorola an721 application
2n6083 an721
AN282A
|
Untitled
Abstract: No abstract text available
Text: MOTOROLA Order this document by MRF173/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors MRF173 N–Channel Enhancement Mode MOSFETs Designed for broadband commercial and military applications up to 200 MHz frequency range. The high–power, high–gain and broadband performance of
|
Original
|
PDF
|
MRF173/D
MRF173
MRF173/D*
|
motorola AN211A
Abstract: "RF MOSFETs" zener motorola VK20019-4B 1N5925A AN211A AN721 MRF173 MRF173CQ VK200
Text: MOTOROLA Order this document by MRF173/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors MRF173 MRF173CQ N–Channel Enhancement Mode MOSFETs Designed for broadband commercial and military applications up to 200 MHz frequency range. The high–power, high–gain and broadband performance of
|
Original
|
PDF
|
MRF173/D
MRF173
MRF173CQ
MRF173
motorola AN211A
"RF MOSFETs"
zener motorola
VK20019-4B
1N5925A
AN211A
AN721
MRF173CQ
VK200
|
1n4740 MOTOROLA
Abstract: 18006-1-Q1 motorola AN211A MRF136Y mrf136y design motorola bipolar transistor data manual 319B-02 planar transformer theory j342 1N4740
Text: MOTOROLA Order this document by MRF136Y/D SEMICONDUCTOR TECHNICAL DATA RF Power Field-Effect Transistor MRF136Y N-Channel Enhancement-Mode MOSFET Designed for wideband large–signal amplifier and oscillator applications up to 400 MHz range, in either single ended or push–pull configuration.
|
Original
|
PDF
|
MRF136Y/D
MRF136Y
1n4740 MOTOROLA
18006-1-Q1
motorola AN211A
MRF136Y
mrf136y design
motorola bipolar transistor data manual
319B-02
planar transformer theory
j342
1N4740
|
J50 mosfet
Abstract: J119 fet transistor k 2723 J892 J168 J119 transistor
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistors MRF136 N-Channel Enhancement-Mode MOSFET Designed for wideband large–signal amplifier and oscillator applications up to 400 MHz range, in single ended configuration.
|
Original
|
PDF
|
MRF136
MRF136
AN215A.
J50 mosfet
J119 fet
transistor k 2723
J892
J168
J119 transistor
|
Untitled
Abstract: No abstract text available
Text: MOTOROLA Order this document by MRF5015/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistor MRF5015 N–Channel Enhancement–Mode Designed for broadband commercial and industrial applications at frequencies to 520 MHz. The high gain and broadband performance of this device
|
Original
|
PDF
|
MRF5015/D
MRF5015
MRF5015/D*
|
MRF173
Abstract: RF MOSFETs 1150 RC NETWORK bourns vk200* FERROXCUBE
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Pow er Field E ffect Transistors MRF173 MRF173CQ N-Channel Enhancement Mode MOSFETs Designed for broadband commercial and military applications up to 200 MHz frequency range. The high-power, high-gain and broadband performance of
|
OCR Scan
|
PDF
|
MRF173
MRF173CQ
MRF173/CQ
MRF173CQ
RF MOSFETs
1150 RC NETWORK bourns
vk200* FERROXCUBE
|
RF MOSFETs
Abstract: "RF MOSFETs"
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA M RF173* M RF173CQ The RF MOSFET Line RF P o w er Field E ffe c t Transistors ‘Motorola Preferred Device N-Channel Enhancement Mode MOSFETs 80 W, 28 V, 175 MHz N-CHANNEL BROADBAND RF POWER MOSFETs Designed for broadband commercial and military applications up to 200 MHz
|
OCR Scan
|
PDF
|
RF173*
RF173CQ
MRF173/CQ.
AN721,
MRF173
MRF173CQ
RF MOSFETs
"RF MOSFETs"
|
RF MOSFETs
Abstract: motorola bipolar transistor data manual application MOSFET transmitters fm amplifier RF CLASS B FET MOSFET
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF173 RF Power Field E ffect Transistor N-Channel Enhancement Mode MOSFET 80 W, 28 V, 175 MHz N-CHANNEL BROADBAND RF POWER MOSFET Designed for broadband commercial and military applications up to 200 MHz
|
OCR Scan
|
PDF
|
MRF173.
AN721,
MRF173
RF MOSFETs
motorola bipolar transistor data manual
application MOSFET transmitters fm
amplifier RF CLASS B FET MOSFET
|
equivalent for transistor tt 2206
Abstract: equivalent transistor TT 2206 transistor tt 2206 MRF163 TT 2206 transistor
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistor N-Channel Enhancement-Mode . . . designed for wideband large-signal output and driver applications up to 400 MHz range. • Guaranteed 28 Volt, 400 MHz Performance Output Power = 25 Watts
|
OCR Scan
|
PDF
|
MRF163,
MRF163
AN215A
equivalent for transistor tt 2206
equivalent transistor TT 2206
transistor tt 2206
TT 2206 transistor
|
MRF162
Abstract: S21171 triode FU 33 MOTOROLA TRANSISTOR 712
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA M R F162 The RF MOSFET Line RF P o w er Field E ffe c t Transistor N-Channel Enhancement-Mode . . . designed for wideband large-signal output and driver applications up to 400 MHz range. • Guaranteed 28 Volt, 400 MHz Performance
|
OCR Scan
|
PDF
|
MRF162,
MRF162
AN215A
RF162
S21171
triode FU 33
MOTOROLA TRANSISTOR 712
|
J141 mosfet
Abstract: MRF-161 fet j141 mrf161 2191F SELF vk200 k 575
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF P o w er Field E ffe c t lY an sisto r N-Channel Enhancement-Mode . . . designed for wideband large-signal amplifier and oscillator applications up to 400 MHz range. • Guaranteed 28 Volt, 400 MHz Performance
|
OCR Scan
|
PDF
|
MRF161,
MRF161
AN215A
J141 mosfet
MRF-161
fet j141
2191F
SELF vk200
k 575
|
|
|
136y
Abstract: 2117 equivalent p channel de mosfet zt173 MOTOROLA S 5068
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA M R F136 M R F 136Y The RF MOSFET Line RF P ow er F ie ld -E ffe ct Transistors N -Channel E nhancem ent-M ode MOSFETs 15 W, 30 W, to 400 MHz N-CHANNEL MOS BROADBAND RF POWER FETs . . designed for wideband large-signal amplifier and oscillator applications up
|
OCR Scan
|
PDF
|
MRF136
MRF136Y
MRF136Y
AN215A
DL110
136y
2117 equivalent
p channel de mosfet
zt173
MOTOROLA S 5068
|
transistor 7808
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Pow er F ield -E ffect Transistor MRF134 N-Channel Enhancement-Mode . . . designed for wideband large-signal amplifier and oscillator applications up to 400 MHz range. • Guaranteed 28 Volt, 150 MHz Performance
|
OCR Scan
|
PDF
|
MRF134
MRF134,
MRF134
68-ohm
AN215A
transistor 7808
|
SELF vk200
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF P o w er F ield -E ffect Transistor N-Channel Enhancement-Mode . . . designed for wideband large-signal amplifier and oscillator applications up to 400 MHz range. 5.0 W, to 400 MHz N-CHANNEL MOS BROADBAND RF POWER
|
OCR Scan
|
PDF
|
MRF134
68-ohm
AN215A
SELF vk200
|
MRF1507
Abstract: PJ 0459
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFETs The MRF1507 is designed fo r broadband com m ercial and industrial applications at frequencies to 520 MHz. The high gain and broadband
|
OCR Scan
|
PDF
|
MRF1507
AN215A,
MRF1507T1
PJ 0459
|
mrf5015
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistor MRF5015 N-Channel Enhancement-Mode Designed for broadband commercial and industrial applications at frequen cies to 520 MHz. The high gain and broadband performance of this device
|
OCR Scan
|
PDF
|
MRF5015
AN215A,
|
15J02
Abstract: 15j02 rf Motorola motorola 15J02 RF MOSFETs 15J02 motorola MRF501 F5015
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA M R F5015 Advance Information The RF MOSFET Line M o to ro la P re fe rre d D ev ice RF P o w er Field E ffe c t T ransistor N-Channei Enhancement-Mode 15 W, 512 MHz, 12.5 VOLTS N-CHANNEL BROADBAND RF POWER FET Designed for broadband commercial and industrial applications at frequen
|
OCR Scan
|
PDF
|
F5015
RF5015
AN215A,
MRF5015
15J02
15j02 rf Motorola
motorola 15J02
RF MOSFETs
15J02 motorola
MRF501
F5015
|
Untitled
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field E ffect Transistor MRF5035 N-Channel Enhancement-Mode Designed for broadband commercial and industrial applications at frequen cies to 520 MHz. The high gain and broadband performance of this device
|
OCR Scan
|
PDF
|
MRF5035
AN215A,
MRF5035.
AN721,
|
motorola MRF136
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Pow er F ield -E ffect Transistors MRF136 M RF136Y N-Channel Enhancem ent-M ode MOSFETs . . . designed for wideband large-signal amplifier and oscillator applications up to 400 MHz range, in either single ended or push-pull configuration.
|
OCR Scan
|
PDF
|
RF136
MRF136Y
MRF136
RF136Y
MRF136Y
AN215A.
motorola MRF136
|
F5003
Abstract: 1N4734
Text: MOTOROLA • SEMICONDUCTOR TECHNICAL DATA M R F5003 The RF MOSFET Line RF P ow er Field E ffe c t Transistor Motorola Preferred Device N-Channel Enhancement-Mode The MRF5003 is designed for broadband commercial and industrial applications at frequencies to 520 MHz. The high gain and broadband
|
OCR Scan
|
PDF
|
F5003
MRF5003
MRFS003
AN215A,
F5003
1N4734
|
SU 179 transistor
Abstract: s227
Text: MOTOROLA •I SEMICONDUCTOR TECHNICAL DATA MRF5035 Advance Information The RF MOSFET Line Motorola Preferred Device RF Power Field Effect Transistor N-Channel Enhancement-Mode 35 W, 12.5 VOLTS, 512 MHz N-CHANNEL BROADBAND RF POWER FET Designed for broadband commercial and Industrial applications at frequen
|
OCR Scan
|
PDF
|
MRF5035
MRF5035
AN215A,
MRF5035.
AN721,
RF5035
SU 179 transistor
s227
|
