BC237
Abstract: sot23 transistor marking JY
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Dual Series Switching Diode BAV199LT1 This switching diode has the following features: • Low Leakage Current Applications Motorola Preferred Device • Medium Speed Switching Times • Available in 8 mm Tape and Reel
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Original
|
BAV199LT1
BAV199LT3
inch/10
BAV199LT1
236AB)
S218A
MSC1621T1
MSC2404
MSD1819A
MV1620
BC237
sot23 transistor marking JY
|
PDF
|
BC237
Abstract: 2N2904 bf245b equivalent SOT23 Marking JX
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Monolithic Dual Switching Diode This switching diode has the following features: BAV170LT1 • Low Leakage Current Applications Motorola Preferred Device • Medium Speed Switching Times • Available in 8 mm Tape and Reel
|
Original
|
BAV170LT1
BAV170LT3
inch/10
BAV170LT1
236AB)
t218A
MSC1621T1
MSC2404
MSD1819A
MV1620
BC237
2N2904
bf245b equivalent
SOT23 Marking JX
|
PDF
|
BC237
Abstract: TRANSISTOR bc177b
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Monolithic Dual Switching Diode This switching diode has the following features: BAW156LT1 • Low Leakage Current Applications Motorola Preferred Device • Medium Speed Switching Times • Available in 8 mm Tape and Reel
|
Original
|
BAW156LT1
BAW156LT3
inch/10
BAW156LT1
236AB)
Junc218A
MSC1621T1
MSC2404
MSD1819A
MV1620
BC237
TRANSISTOR bc177b
|
PDF
|
BC237
Abstract: 2n2222a SOT223 5161 common anode
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MV7005T1 Silicon Tuning Diode Motorola Preferred Device This silicon tuning diode is designed for use in high capacitance, high–tuning ratio applications. The device is housed in the SOT-223 package which is designed for
|
Original
|
OT-223
MV7005T1
MSC1621T1
MSC2404
MSD1819A
MV1620
MV1624
MV1636
MV1640
BC237
2n2222a SOT223
5161 common anode
|
PDF
|
BC237
Abstract: application notes BF245A
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Monolithic Dual Switching Diode Common Anode ANODE 3 BAW56LT1 Motorola Preferred Device CATHODE 1 2 CATHODE 3 1 MAXIMUM RATINGS EACH DIODE Symbol Value Unit Reverse Voltage VR 70 Vdc Forward Current IF 200 mAdc IFM(surge)
|
Original
|
BAW56LT1
236AB)
Un218A
MSC1621T1
MSC2404
MSD1819A
MV1620
MV1624
MV1636
MV1640
BC237
application notes BF245A
|
PDF
|
BC237
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Monolithic Dual Switching Diode Common Cathode BAV70LT1 Motorola Preferred Device ANODE 1 3 CATHODE 2 ANODE 3 1 MAXIMUM RATINGS EACH DIODE Symbol Value Unit Reverse Voltage VR 70 Vdc Forward Current IF 200 mAdc IFM(surge)
|
Original
|
BAV70LT1
236AB)
Uni218A
MSC1621T1
MSC2404
MSD1819A
MV1620
MV1624
MV1636
MV1640
BC237
|
PDF
|
BC237
Abstract: bc547 equivalent
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Dual Switching Diode MMBD7000LT1 Motorola Preferred Device 1 ANODE 3 CATHODE/ANODE 2 CATHODE 3 1 2 MAXIMUM RATINGS EACH DIODE Rating Symbol Value Unit Reverse Voltage VR 100 Vdc Forward Current IF 200 mAdc IFM(surge)
|
Original
|
MMBD7000LT1
236AB)
MSC1621T1
MSC2404
MSD1819A
MV1620
MV1624
MV1636
MV1640
MV1642
BC237
bc547 equivalent
|
PDF
|
BC237
Abstract: diode H5
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Switching Diode MMSD914T1 The switching diode has the following features: Motorola Preferred Device • SOD–123 Surface Mount Package • High Breakdown Voltage • Fast Speed Switching Time 1 Cathode 2 2 Anode 1 CASE 425–04, STYLE 1
|
Original
|
MMSD914T1
Ambient218A
MSC1621T1
MSC2404
MSD1819A
MV1620
MV1624
MV1636
MV1640
BC237
diode H5
|
PDF
|
BC237
Abstract: BC547
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BAS116LT1 Switching Diode This switching diode has the following features: Motorola Preferred Device • Low Leakage Current Applications • Medium Speed Switching Times • Available in 8 mm Tape and Reel Use BAS116LT1 to order the 7 inch/3,000 unit reel
|
Original
|
BAS116LT1
BAS116LT3
inch/10
BAS116LT1
236AB)
Total218A
MSC1621T1
MSC2404
MSD1819A
MV1620
BC237
BC547
|
PDF
|
BC237
Abstract: SOT-223 number code book FREE
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MV7404T1 Silicon Hyper-Abrupt Tuning Diode Motorola Preferred Device This silicon tuning diode is designed for high capacitance and a tuning ratio of greater than 10 times over a bias range of 2.0 to 10 volts. It provides tuning over a
|
Original
|
OT-223
solder218A
MSC1621T1
MSC2404
MSD1819A
MV1620
MV1624
MV1636
MV1640
BC237
SOT-223 number code book FREE
|
PDF
|
BC237
Abstract: jedec package TO-226AA
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Dual Series Switching Diode BAV99LT1 ANODE 1 Motorola Preferred Device CATHODE 2 3 CATHODE/ANODE 3 1 2 CASE 318 – 08, STYLE 11 SOT– 23 TO – 236AB MAXIMUM RATINGS (EACH DIODE) Rating Symbol Value Unit Reverse Voltage
|
Original
|
BAV99LT1
236AB)
J218A
MSC1621T1
MSC2404
MSD1819A
MV1620
MV1624
MV1636
MV1640
BC237
jedec package TO-226AA
|
PDF
|
2n3819 replacement
Abstract: 2n3053 replacement BC109C replacement mps2907 replacement bf245 replacement BC237 BF245 bf258 replacement J112 equivalent 2N4265
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Silicon Tuning Diode MMBV809LT1 This device is designed for 900 MHz frequency control and tuning applications. It provides solid–state reliability in replacement of mechanical tuning methods. Motorola Preferred Device
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Original
|
MMBV809LT1
236AB)
MSC1621T1
MSC2404
MSD1819A
MV1620
MV1624
MV1636
MV1640
MV1642
2n3819 replacement
2n3053 replacement
BC109C replacement
mps2907 replacement
bf245 replacement
BC237
BF245
bf258 replacement
J112 equivalent
2N4265
|
PDF
|
MJ3001 equivalent
Abstract: bd139 equivalent transistor equivalent book 2SC2073 2N3055 equivalent transistor NUMBER MJE371 equivalent bd139 equivalent transistor BU108 BDT65C equivalent 2sd313 equivalent darlington tip31
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJ10005* Data Sheet Designer's SWITCHMODE Series NPN Silicon Power Darlington Transistor with Base-Emitter Speedup Diode *Motorola Preferred Device 20 AMPERE NPN SILICON POWER DARLINGTON TRANSISTORS 400 VOLTS 175 WATTS
|
Original
|
MJ10005
MJ10005*
TIP73B
TIP74
TIP74A
TIP74B
TIP75
TIP75A
TIP75B
TIP75C
MJ3001 equivalent
bd139 equivalent
transistor equivalent book 2SC2073
2N3055 equivalent transistor NUMBER
MJE371 equivalent
bd139 equivalent transistor
BU108
BDT65C equivalent
2sd313 equivalent
darlington tip31
|
PDF
|
D45H11 equivalent replacement
Abstract: 2N5036 equivalent BU108 2SD218 equivalent MJE6044 equivalent BD420 equivalent 2SB557 equivalent BU326 BU100 MJ10009
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJ10009* Data Sheet Designer's SWITCHMODE Series NPN Silicon Power Darlington Transistor with Base-Emitter Speedup Diode *Motorola Preferred Device 20 AMPERE NPN SILICON POWER DARLINGTON TRANSISTORS 450 and 500 VOLTS
|
Original
|
MJ10009
Volt32
TIP73B
TIP74
TIP74A
TIP74B
TIP75
TIP75A
TIP75B
TIP75C
D45H11 equivalent replacement
2N5036 equivalent
BU108
2SD218 equivalent
MJE6044 equivalent
BD420 equivalent
2SB557 equivalent
BU326
BU100
|
PDF
|
|
|
BU108
Abstract: BDX33D equivalent BD130 TO126 TIP-551 2SA627 BU100 2SB554 cross reference 2SC2536 2N3025 Transistor 3202 1 A 60
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJ10007* Data Sheet Designer's SWITCHMODE Series NPN Silicon Power Darlington Transistors with Base-Emitter Speedup Diode *Motorola Preferred Device 10 AMPERE NPN SILICON POWER DARLINGTON TRANSISTORS 400 VOLTS 150 WATTS
|
Original
|
MJ10007
Curr32
TIP73B
TIP74
TIP74A
TIP74B
TIP75
TIP75A
TIP75B
TIP75C
BU108
BDX33D equivalent
BD130 TO126
TIP-551
2SA627
BU100
2SB554 cross reference
2SC2536
2N3025
Transistor 3202 1 A 60
|
PDF
|
MOC263
Abstract: RS481A
Text: MOTOROLA Order this document by MOC263/D SEMICONDUCTOR TECHNICAL DATA MOC263 Small Outline Optoisolators [CTR = 500% Min] Darlington Output No Base Connection Motorola Preferred Device These devices consist of a gallium arsenide infrared emitting diode optically
|
Original
|
MOC263/D
MOC263
MOC263/D*
MOC263
RS481A
|
PDF
|
j305 replacement
Abstract: BC237 mps2907 replacement BC109C replacement
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MMBV3102LT1 Silicon Tuning Diode Motorola Preferred Device This device is designed in the Surface Mount package for general frequency control and tuning applications. It provides solid–state reliability in replacement of mechanical
|
Original
|
MMBV3102LT1
236AB)
t218A
MSC1621T1
MSC2404
MSD1819A
MV1620
MV1624
MV1636
MV1640
j305 replacement
BC237
mps2907 replacement
BC109C replacement
|
PDF
|
MOC8080
Abstract: No abstract text available
Text: MOTOROLA Order this document by MOC8080/D SEMICONDUCTOR TECHNICAL DATA MOC8080 GlobalOptoisolator 6-Pin DIP Optoisolator Darlington Output [CTR = 500% Min] Motorola Preferred Device The MOC8080 device consists of a gallium arsenide infrared emitting diode
|
Original
|
MOC8080/D
MOC8080
MOC8080
MOC8080/D*
OptoelectronicsMOC8080/D
|
PDF
|
2n1613 equivalent
Abstract: BC237 diode l 0607
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BAV99WT1 BAV99RWT1 SC-70/SOT-323 Dual Series Switching Diode Motorola Preferred Devices The BAV99WT1 is a smaller package, equivalent to the BAV99LT1. Suggested Applications • ESD Protection • Polarity Reversal Protection
|
Original
|
SC-70/SOT-323
BAV99WT1
BAV99LT1.
BAV99RWT1
MSC1621T1
MSC2404
MSD1819A
MV1620
MV1624
2n1613 equivalent
BC237
diode l 0607
|
PDF
|
BC237
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BAS40-04LT1 Preliminary Information Common Anode Schottky Barrier Diode Motorola Preferred Device These Schottky barrier diodes are designed for high speed switching applications, circuit protection, and voltage clamping. Extremely low forward voltage reduces
|
Original
|
BAS40-04LT1
236AB)
Diss218A
MSC1621T1
MSC2404
MSD1819A
MV1620
MV1624
MV1636
MV1640
BC237
|
PDF
|
BC237
Abstract: Y2 sot 23
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MMBV3401LT1 Silicon Pin Diode Motorola Preferred Device This device is designed primarily for VHF band switching applications but is also suitable for use in general–purpose switching circuits. Supplied in a Surface Mount
|
Original
|
MMBV3401LT1
236AB)
P218A
MSC1621T1
MSC2404
MSD1819A
MV1620
MV1624
MV1636
MV1640
BC237
Y2 sot 23
|
PDF
|
BC237
Abstract: MARKING CODE diode sod123 W1
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BAS70-04LT1 Preliminary Information Common Anode Schottky Barrier Diode Motorola Preferred Device These Schottky barrier diodes are designed for high speed switching applications, circuit protection, and voltage clamping. Extremely low forward voltage reduces
|
Original
|
BAS70-04LT1
236AB)
Diss218A
MSC1621T1
MSC2404
MSD1819A
MV1620
MV1624
MV1636
MV1640
BC237
MARKING CODE diode sod123 W1
|
PDF
|
MAD130P
Abstract: 2N1711 solid state BC237 MARKING CODE diode sod123 t3 H3T-B MPS4258 bf244 MSA1022 Bf391 BCY72
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Monolithic Diode Array MMAD1108 Surface Mount Isolated 8–Diode Array This diode array is a multiple diode junction fabricated by a planar process and mounted in integrated circuit packages for use in high–current, fast–switching
|
Original
|
MMAD1108
De218A
MSC1621T1
MSC2404
MSD1819A
MV1620
MV1624
MV1636
MV1640
MV1642
MAD130P
2N1711 solid state
BC237
MARKING CODE diode sod123 t3
H3T-B
MPS4258
bf244
MSA1022
Bf391
BCY72
|
PDF
|
MOC263
Abstract: No abstract text available
Text: MOTOROLA O rder this docum ent by MOC263/D SEMICONDUCTOR TECHNICAL DATA MOC263 Small Outline Optoisolators [CTR = 500% Min] Darlington Output No Base Connection Motorola Preferred Device These devices consist of a gallium arsenide infrared emitting diode optically
|
OCR Scan
|
MOC263/D
RS481A
S5036.
2PHX34506P-O
MOC263
|
PDF
|
