MOTOROLA MSD6 Search Results

MOTOROLA MSD6 Result Highlights (2)

Part	ECAD Model	Manufacturer	Description	Download	Buy
AS839		Coilcraft Inc	DSL transformer, for Motorola MC145660, SMT, not RoHS
AS8397-		Coilcraft Inc	DSL transformer, for Motorola MC145660, SMT, not RoHS

MOTOROLA MSD6 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
transistor MW 882 Abstract: BC107 equivalent transistors BC237 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA  MMBF2201NT1 Motorola Preferred Device Low rDS on Small-Signal MOSFETs TMOS Single N-Channel Field Effect Transistors  Part of the GreenLine Portfolio of devices with energy–conserving traits. These miniature surface mount MOSFETs utilize Motorola’s	Original	MMBF2201NT1 Surface218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 MV1642 transistor MW 882 BC107 equivalent transistors BC237	PDF
BC237 Abstract: IRFD110 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA  MMBF2201NT1 Motorola Preferred Device Low rDS on Small-Signal MOSFETs TMOS Single N-Channel Field Effect Transistors  Part of the GreenLine Portfolio of devices with energy–conserving traits. These miniature surface mount MOSFETs utilize Motorola’s	Original	MMBF2201NT1 Surface218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 MV1642 BC237 IRFD110	PDF
marking code motorola ic Abstract: MSD601 MSD601-RT1 MSD601-ST1 SMD310 Text: MOTOROLA Order this document by MSD601–RT1/D SEMICONDUCTOR TECHNICAL DATA NPN General Purpose Amplifier Transistors Surface Mount MSD601-RT1* MSD601-ST1 COLLECTOR 3 *Motorola Preferred Device 2 BASE MAXIMUM RATINGS TA = 25°C 1 EMITTER Symbol Value Unit	Original	MSD601 MSD601-RT1* MSD601-ST1 MSD601-RT1/D* marking code motorola ic MSD601-RT1 MSD601-ST1 SMD310	PDF
marking code J111 Abstract: BC237 2N2904 bc547 marking transistor BCY72 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN General Purpose Amplifier Transistor Surface Mount MSD602-RT1 Motorola Preferred Device COLLECTOR 3 3 2 2 BASE MAXIMUM RATINGS TA = 25°C Symbol Value Unit Collector–Base Voltage V(BR)CBO 60 Vdc Collector–Emitter Voltage	Original	MSD602-RT1 IB218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 MV1642 marking code J111 BC237 2N2904 bc547 marking transistor BCY72	PDF
marking code transistor HK Abstract: MSD602 MSD602-RT1 SMD310 Text: MOTOROLA Order this document by MSD602–RT1/D SEMICONDUCTOR TECHNICAL DATA NPN General Purpose Amplifier Transistor Surface Mount COLLECTOR MSD602-RT1 Motorola Preferred Device 3 3 2 BASE 2 1 EMITTER 1 MAXIMUM RATINGS TA = 25°C Symbol Value Unit Collector–Base Voltage	Original	MSD602 MSD602-RT1 MSD602-RT1/D* marking code transistor HK MSD602-RT1 SMD310	PDF
BD139 Abstract: BU108 BU326 BU100 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN 2N6055 2N6056* Darlington Complementary Silicon Power Transistors *Motorola Preferred Device . . . designed for general–purpose amplifier and low frequency switching applications. DARLINGTON 8 AMPERE COMPLEMENTARY	Original	2N6055 2N6056 2N6056* TIP73B TIP74 TIP74A TIP74B TIP75 BD139 BU108 BU326 BU100	PDF
2N6055 MOTOROLA Abstract: Darlington Silicon Power Transistor 10 amp npn darlington power transistors 2N6055 100 amp npn darlington power transistors 2N6056 2N6056 MOTOROLA POWER BIPOLAR JUNCTION TRANSISTOR power transistors 03 transistor Text: MOTOROLA Order this document by 2N6055/D SEMICONDUCTOR TECHNICAL DATA NPN 2N6055 2N6056* Darlington Complementary Silicon Power Transistors *Motorola Preferred Device . . . designed for general–purpose amplifier and low frequency switching applications.	Original	2N6055/D 2N6055 2N6056* 2N6056 2N6055/D* 2N6055 MOTOROLA Darlington Silicon Power Transistor 10 amp npn darlington power transistors 2N6055 100 amp npn darlington power transistors 2N6056 2N6056 MOTOROLA POWER BIPOLAR JUNCTION TRANSISTOR power transistors 03 transistor	PDF
2n3019 replacement Abstract: BC237 MV209 diode mps2907 replacement 2n3819 replacement K 2056 transistor 6-SOT-23 marking 27 OF transistor 2N2222 to-92 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MBV109T1 MMBV109LT1* MV209* Silicon Epicap Diodes Designed for general frequency control and tuning applications; providing solid–state reliability in replacement of mechnaical tuning methods. * Motorola Preferred Devices	Original	70/SOT MBV109T1 MMBV109LT1* MV209* R218A MSC1621T1 MSC2404 MSD1819A MV1620 2n3019 replacement BC237 MV209 diode mps2907 replacement 2n3819 replacement K 2056 transistor 6-SOT-23 marking 27 OF transistor 2N2222 to-92	PDF
Untitled Abstract: No abstract text available Text: MOTOROLA Order this document by 2N6056/D SEMICONDUCTOR TECHNICAL DATA 2N6056 NPN Darlington Silicon Power Transistor Motorola Preferred Device . . . designed for general–purpose amplifier and low frequency switching applications. DARLINGTON 8 AMPERE SILICON	Original	2N6056/D 2N6056	PDF
2SA1046 Abstract: BU108 TRANSISTOR BC 239 c BU326 BU100 mje15033 replacement Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N6387 2N6388* Plastic Medium-Power Silicon Transistors *Motorola Preferred Device . . . designed for general–purpose amplifier and low–speed switching applications. DARLINGTON 8 AND 10 AMPERE NPN SILICON POWER TRANSISTORS	Original	2N6387 2N6388 2N6387, 220AB 2N6388* TIP73B TIP74 TIP74A 2SA1046 BU108 TRANSISTOR BC 239 c BU326 BU100 mje15033 replacement	PDF
2Sd331 npn transistor Abstract: 724 motorola NPN Transistor with collector heat pad BU108 2SA1046 MJ15003 300 watts amplifier MOTOROLA MJD122 application note ST T4 3580 724 motorola NPN Transistor with heat pad BDX54 BU326 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN MJD122* PNP MJD127* Complementary Darlington Power Transistors DPAK For Surface Mount Applications *Motorola Preferred Device Designed for general purpose amplifier and low speed switching applications. SILICON POWER TRANSISTORS	Original	2N6040 2N6045 TIP120 TIP122 TIP125 TIP127 MJD122* MJD127* TIP73B TIP74 2Sd331 npn transistor 724 motorola NPN Transistor with collector heat pad BU108 2SA1046 MJ15003 300 watts amplifier MOTOROLA MJD122 application note ST T4 3580 724 motorola NPN Transistor with heat pad BDX54 BU326	PDF
2n3819 replacement Abstract: 2n3053 replacement BC109C replacement mps2907 replacement bf245 replacement BC237 BF245 bf258 replacement J112 equivalent 2N4265 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Silicon Tuning Diode MMBV809LT1 This device is designed for 900 MHz frequency control and tuning applications. It provides solid–state reliability in replacement of mechanical tuning methods. Motorola Preferred Device	Original	MMBV809LT1 236AB) MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 MV1642 2n3819 replacement 2n3053 replacement BC109C replacement mps2907 replacement bf245 replacement BC237 BF245 bf258 replacement J112 equivalent 2N4265	PDF
DIODE 638 MOTOROLA Abstract: 1N5825 2N6284 2N6287 MJH6284 MJH6287 MSD6100 Text: MOTOROLA Order this document by MJH6284/D SEMICONDUCTOR TECHNICAL DATA NPN MJH6284 PNP MJH6287 Darlington Complementary Silicon Power Transistors . . . designed for general–purpose amplifier and low–speed switching motor control applications. Motorola Preferred Devices	Original	MJH6284/D MJH6284 MJH6287 2N6284 2N6287 DIODE 638 MOTOROLA 1N5825 2N6287 MJH6284 MJH6287 MSD6100	PDF
BC237 Abstract: MAD1103P msc2295 MPS41 BCY72 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BAS70LT1 Preliminary Information Schottky Barrier Diodes Motorola Preferred Device These Schottky barrier diodes are designed for high speed switching applications, circuit protection, and voltage clamping. Extremely low forward voltage reduces	Original	BAS70LT1 236AB) ab218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 BC237 MAD1103P msc2295 MPS41 BCY72	PDF

Untitled Abstract: No abstract text available Text: MOTOROLA Order this document by 2N5882/D SEMICONDUCTOR TECHNICAL DATA 2N5882 Silicon NPN High-Power Transistor Motorola Preferred Device . . . designed for general–purpose power amplifier and switching applications. • Collector–Emitter Sustaining Voltage —	Original	2N5882/D 2N5882	PDF
2n3819 replacement Abstract: transistor TO-92 bc108 mps2907 replacement BC237 BC109C replacement BF245 bf245 replacement Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MMBV409LT1 MV409 Silicon Tuning Diodes These devices are designed for general frequency control and tuning applications. They provide solid–state reliability in replacement of mechanical tuning methods. Motorola Preferred Devices	Original	MMBV409LT1 MV409 236AB) 8218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 2n3819 replacement transistor TO-92 bc108 mps2907 replacement BC237 BC109C replacement BF245 bf245 replacement	PDF
BC108 characteristic Abstract: BC237 c 2026 y transistor msc2295 marking 7m SOT-323 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Dual Bias Resistor Transistors MUN5211DW1T1 SERIES NPN Silicon Surface Mount Transistors with Monolithic Bias Resistor Network Motorola Preferred Devices The BRT Bias Resistor Transistor contains a single transistor with a	Original	MUN5211DW1T1 Reduc218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 MV1642 BC108 characteristic BC237 c 2026 y transistor msc2295 marking 7m SOT-323	PDF
221D Abstract: 2N6388 2N6668 MJF6388 MJF6668 MSD6100 MUR110 TIP102 TIP107 transistor TIP107 Text: MOTOROLA Order this document by MJF6388/D SEMICONDUCTOR TECHNICAL DATA NPN MJF6388 * PNP MJF6668* Complementary Power Darlingtons For Isolated Package Applications *Motorola Preferred Devices Designed for general–purpose amplifiers and switching applications, where the	Original	MJF6388/D* MJF6388/D 221D 2N6388 2N6668 MJF6388 MJF6668 MSD6100 MUR110 TIP102 TIP107 transistor TIP107	PDF
BC237 Abstract: MPF4391 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Dual Series Schottky Barrier Diodes BAT54SWT1 Motorola Preferred Device These Schottky barrier diodes are designed for high speed switching applications, circuit protection, and voltage clamping. Extremely low forward voltage reduces	Original	BAT54SWT1 TA218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 MV1642 BC237 MPF4391	PDF
BC237 Abstract: No abstract text available Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BAS40LT1 Preliminary Information Schottky Barrier Diodes Motorola Preferred Device These Schottky barrier diodes are designed for high speed switching applications, circuit protection, and voltage clamping. Extremely low forward voltage reduces	Original	BAS40LT1 236AB) MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 MV1642 BC237	PDF
transistor marking ld3 Abstract: BC237 BC857A motorola transistor dpak marking 529 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Dual Series Schottky Barrier Diodes BAT54SLT1 Motorola Preferred Device These Schottky barrier diodes are designed for high speed switching applications, circuit protection, and voltage clamping. Extremely low forward voltage reduces	Original	BAT54SLT1 236AB) Di218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 transistor marking ld3 BC237 BC857A motorola transistor dpak marking 529	PDF
mpsa63 replace Abstract: BC237 MPSA63 equivalent J111 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Darlington Transistors MPSA62 MPSA63 MPSA64 * PNP Silicon COLLECTOR 3 MPSA55, MPSA56 BASE 2 For Specifications, See MPSA05, MPSA06 Data *Motorola Preferred Device EMITTER 1 MAXIMUM RATINGS Symbol MPSA62 MPSA63 MPSA64 Unit	Original	MPSA62 MPSA63 MPSA64 MPSA55, MPSA56 MPSA05, MPSA06 MPSA62 mpsa63 replace BC237 MPSA63 equivalent J111	PDF
Untitled Abstract: No abstract text available Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN General Purpose A m plifier Transistor Surface Mount MSD602-RT1 Motorola Preferred Device COLLECTOR H □ U 2 1 BASE MAXIMUM RATINGS TA = 25°C Rating EMITTER Symbol Value Collector-Base Voltage v (BR)CBO 60 Vdc	OCR Scan	MSD602-RT1 b3b72SS	PDF
Untitled Abstract: No abstract text available Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN G eneral Purpose A m plifier Transistor Surface Mount MSD602-RT1 Motorola Preferred Device COLLECTOR n □ n MAXIMUM RATINGS TA = 25 C\| Rating 2 1 BASE EMITTER Symbol Value Unit Collector-Base Voltage V(BR CBO 60	OCR Scan	MSD602-RT1 318D-03, SC-59	PDF

MOTOROLA MSD6 Search Results

MOTOROLA MSD6 Result Highlights (2)

MOTOROLA MSD6 Datasheets Context Search

transistor MW 882

BC237

marking code motorola ic

marking code J111

marking code transistor HK

BD139

2N6055 MOTOROLA

2n3019 replacement

Untitled

2SA1046

2Sd331 npn transistor

2n3819 replacement

DIODE 638 MOTOROLA

BC237

Untitled

2n3819 replacement

BC108 characteristic

221D

BC237

BC237

transistor marking ld3

mpsa63 replace

Untitled

Untitled