HC08MP16
Abstract: ac motor speed control circuit diagram with IGBT schematic diagram motor control using pwm module 1 HP SINGLE PHASE induction motor speed control using pwm inverter use igbt for 3 phase induction motor PWM generator for IGBT DC MOTOR SPEED CONTROL USING IGBT MGB20N40CL circuit diagram MC33153 12 volt dc to 220 volt ac inverter schematic
Text: BR1480/D Silicon Solutions for Off Line Motor Drives • Application Specific MCU’s • Optoisolators • MOS Gate Drivers and Control IC’s • Discrete Insulated Gate Bipolar Transistors • Input Rectifiers • Hybrid IGBT Power Modules • High Voltage MOSFETS for Power Supply
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BR1480/D
K1TITC122/D
K1TITC132/D
HC08MP16
ac motor speed control circuit diagram with IGBT
schematic diagram motor control using pwm module
1 HP SINGLE PHASE induction motor speed control using pwm inverter
use igbt for 3 phase induction motor
PWM generator for IGBT
DC MOTOR SPEED CONTROL USING IGBT
MGB20N40CL
circuit diagram MC33153
12 volt dc to 220 volt ac inverter schematic
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H11AV1
Abstract: H11AV2 H11AV1A H11AV2A h11av2 equivalent H11AV1 Application 730A-04 8UA18
Text: MOTOROLA Order this document by H11AV1/D SEMICONDUCTOR TECHNICAL DATA H11AV1,A* H11AV2,A [CTR = 100% Min] GlobalOptoisolator 6-Pin DIP Optoisolators Transistor Output [CTR = 50% Min] *Motorola Preferred Devices The H11AV1,A and H11AV2,A devices consist of a gallium arsenide infrared
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H11AV1/D
H11AV1
H11AV2
H11AV1/D*
H11AV1A
H11AV2A
h11av2 equivalent
H11AV1 Application
730A-04
8UA18
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MTIL113
Abstract: motorola opto 6pin
Text: MOTOROLA SEMICONDUCTOR TECHNICAL Order this document by MTIL1l 3/D DATA @ @ Sml BABT 6-Pin DIP Ontoisolators Darlington Output - The MTILI 13 device consists of a gallium arsenide infrared emitting diode optically coupled to a monolithic silicon photodarlington detector.
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OWI-2447
2H609
140k77
MTlLl13m
MTIL113
motorola opto 6pin
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RP210
Abstract: MEPCO 3 phase analog controller sine wave schematic MC14584BCP R54 Transistor LED DIP2 VR1 7805 mc14584bcp motorola AN1624 ITC122
Text: Order this document by AN1624 Motorola Semiconductor Application Note AN1624 ITC137 68HC708MP16 Motion Control Development Board By Jim Gray, Bill Lucas, and Warren Schultz Introduction A controller that complements software development tools for the 68HC708MP16 is presented here. It provides motor control functions on
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AN1624
ITC137
68HC708MP16
AN1624/D
RP210
MEPCO
3 phase analog controller sine wave schematic
MC14584BCP
R54 Transistor
LED DIP2
VR1 7805
mc14584bcp motorola
AN1624
ITC122
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MTIL117
Abstract: Optoelectronics Device data motorola optoelectronics
Text: MOTOROLA SEMICONDUCTOR :E TECHNICAL Order ttis document by MTlLl17/D DATA , m @;@l@l UL MT1LI17 CSA 6-Pin DIP Optoisolator Transistor Output The MTIL117 device consists of a gallium arsenide infrared emitting diode optically coupled to a monolithic silicon phototransistor detector.
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MTlLl17/D
MT1LI17
MTIL117
MTlLl17
602-2W609
MTIL117~
Optoelectronics Device data
motorola optoelectronics
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TP-104-01-04
Abstract: Mepco-Centralab clarostat 140 Clarostat Sensors and Controls MOTOROLA brushless dc controller clarostat POTENTIOMETER MEPCO ITC137 S2011-36-ND CENTRALAB
Text: Freescale Semiconductor, Inc. Order this document by AN1624 Motorola Semiconductor Application Note Freescale Semiconductor, Inc. AN1624 ITC137 68HC708MP16 Motion Control Development Board By Jim Gray, Bill Lucas, and Warren Schultz Introduction A controller that complements software development tools for the
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AN1624
ITC137
68HC708MP16
AN1624/D
TP-104-01-04
Mepco-Centralab
clarostat 140
Clarostat Sensors and Controls
MOTOROLA brushless dc controller
clarostat POTENTIOMETER
MEPCO
S2011-36-ND
CENTRALAB
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H11AV1
Abstract: H11AV2 H11AV3 H11AV1A H11AV2A H11AV3A diode b3l
Text: MOTOROLA SC DIO D ES/O PTO b4E Ï • b3b725S 0 0 f lb b 43 S T P ■ f l O T ? MOTOROLA SEMICONDUCTOR TECHNICAL DATA 4k TO ca VDE UL C SA SETI BS ® SEMKO DEMKO BABT NEM KO H 1 1 A V 1 ,A * [CTR = 100% Min] H 11 A V 2 ,A 6-Pin D IP O p to is o la to rs
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b3b725S
H11AV1
H11AV2
H11AV3
H11AV3A
H11AV1A
H11AV2A
H11AV3A
diode b3l
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Untitled
Abstract: No abstract text available
Text: Packaging Information Tape and Reel Specifications and Packaging Specifications Embossed Tape and Reel is used to facilitate automatic pick and place equipment feed requirements. The tape is used as the shipping container for various products and requires a minimum of handling. The antistatic/conductive tape provides a secure
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OD-123,
SC-59,
SC-70/SOT-323,
OT-23,
OT-143
OT-223,
SO-14,
SO-16,
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4n33
Abstract: No abstract text available
Text: M O T O R O L A SC D I O D E S / O P T O t,3 b ? 2 5 5 b4E » N0 T7 OüflbfciEID MOTOROLA SEMICONDUCTOR TECHNICAL DATA TO <R VDE UL sen C SA BS ® ® SEM K O DEM KO NEM KO BABT 6-Pin D IP O p to iso la to rs D arlin g to n O u tp u t 4N29 4N29A 4N30*
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4N29/A,
4N32/A
00flbb23
4N29A,
4N32A,
4n33
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triac driver opto moc3021
Abstract: MOC3000 ic moc3041 C6550 driver circuit MCT2E A4N25A motorola til111 MOC3061 h11av1a 4n40 opto coupled scr
Text: MO TO R O L A SC -CDIODES/OPTO} 1SE D I L,3b755S D D Û D 0 D 1 Optoisolators T M \ - % S | 3 Case 730A-02 A n optoisolator con sists of a gallium arsenide infrared em itting diode, IRED, optically coupled to a m onolithic silic o n p h o to -d e te cto r in a lig h t -s h ie ld in g p ack age .
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3b755S
30A-02
OJJ20
730B-02
730C-02
730D-Q2
triac driver opto moc3021
MOC3000
ic moc3041
C6550
driver circuit MCT2E
A4N25A
motorola til111
MOC3061
h11av1a
4n40 opto coupled scr
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2n2222 npn transistor footprint
Abstract: 2N2222A motorola Transistor 2SA 2SB 2SC 2SD RF Transistor 2n2222 Transistor comparable types MRF872 2sa Japanese Transistor 2N2222 2n2222 sot323 JAPANESE TRANSISTOR 2SC
Text: Discrete Product Lines Understanding D evice Prefixes Off-the-shelf surface mount products include most popular small-signal U. S., European and Asian types. Most U. S. standard Motorola SOT-23 devices will have a common alpha prefix, “MMB,” a fourth alpha character which
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OT-23
2N2222
MMBT2222.
OT-143
2n2222 npn transistor footprint
2N2222A motorola
Transistor 2SA 2SB 2SC 2SD
RF Transistor 2n2222
Transistor comparable types
MRF872
2sa Japanese Transistor
2n2222 sot323
JAPANESE TRANSISTOR 2SC
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MOC8060
Abstract: ANSI 60 CE01 Motorola optoisolator lead form options
Text: MO TO R O L A SC D I O D E S / O P T O b3b7255 0GÔ312Ô G K3MOT? 3^E » Order this data sheet by MQC8060/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA Advance Information MOC8O6O 6-Pin DIP Optoisolator AC Input/Darlington Output This device consists of two gallium arsenide infrared emitting diodes connected in inverseparallel, optically coupled to a silicon photodarlington detector which has integral base-emitter
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b3b7255
MQC8060/D
E54915^
C13S0
OJJ20
730B-02
730C-02
730D-Q2
MOC8060
ANSI 60
CE01
Motorola optoisolator lead form options
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Untitled
Abstract: No abstract text available
Text: MOTOROLA SC D IO D ES/O PTO b4E D b 3 fc,7 2 5 S DOflhbSfl Efib MOTOROLA SEMICONDUCTOR TECHNICAL DATA & TO ca VDE UL C SA BS ® SEMKO SETI DEM KO NEMKO BABT 4N38 4N38A 6-Pin D IP O ptoisolators Transistor Output [CTR = 20% Min] STYLE 1 PLASTIC The 4N38 and 4N 38A devices consist of a gallium arsenide infrared em itting diode
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4N38A
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H11AV1
Abstract: No abstract text available
Text: MOTOROLA O rder this docum ent by H11AV1/D SEMICONDUCTOR TECHNICAL DATA & ® TO VDE UL CSA SETI SEMKO DEMKO NEMKO BABT H11AV1,A* H11AV2,A [C TR = 100% Min] GlobalOptoisolator 6-Pin DIP Optoisolators Transistor Output [C TR = 50% Min] 'M o to ro la Preferred Devices
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H11AV1/D
H11AV1
11AV2
H11AV2
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Untitled
Abstract: No abstract text available
Text: MOTOROLA Order this document by H11AV1/D SEMICONDUCTOR TECHNICAL DATA ® TO VDE UL CSA SE TI SEM KO DEM KO NEMKO BABT H11AV1,A* H11AV2,A [C TR = 100% Min] G lo b a l O p to iso la t o r 6-Pin DIP Optoisolators Transistor Output [C TR = 50% Min] ’ M otorola Preferred Devices
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H11AV1/D
H11AV1
H11AV2
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730A-04
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA VDE UL C8A ®®®® 8ETI 8EMK0 DEMKO NEMKO BUT GlobalOptobolator 6-Pin DIP Optoisolators High Voltage Transistor Output 400 Volts [CTR • 20% Min] [CTR « 10% Min] [CTR ■ S% Min] ‘ Motorola Preferred Device
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MOC8204,
MOC8205
MOC8204*
MOC8206
MOC82Q4
MQC8206
730A-04
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PD3007
Abstract: H11D12
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA ®®®® *1 VDE UL CSA 8ETI 8EMK0 DEMMO NEMKO BAST GlobsìOptolsolator 6-Pin D IP O ptolsolators High Voltage Transistor Output 300 Volts H11D1* H11D2 [CTR • 20% Min] ‘Motorola Preferred Device The H11D1 and H11D2 consist of gallium arsenide Infrared emitting diodes
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H11D1
H11D2
H11D1*
H11D2
PD3007
H11D12
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Motorola Application Note AN-780A
Abstract: an-780A motorola AN-780A AN 780a application note an-780a Application Note Motorola 780a an780a MQC3011 motorola an780a m003010
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA VDE *1 fi; Ut CSA ® ® SETI 8EMK0 DEMKO NEMKO BAST GlobalOptoUolator 6-Pin D IP Random -Phase O ptoisolators Tlriac Driver Output PFT i 10 mA Max] [IPT • 10 mA M u] [IPT. 8 mA Max] 250 Volts Peak ‘ Motorola Preferred Device
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M003010
MOC3010
OC3011
OC3012*
MOC3011
MOC3012
M003010/3011/3012
AN-780A.
Motorola Application Note AN-780A
an-780A
motorola AN-780A
AN 780a
application note an-780a
Application Note Motorola 780a
an780a
MQC3011
motorola an780a
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381 motorola
Abstract: DIODE 8827
Text: MOTOROLA Order this document by MTIL113/D SEMICONDUCTOR TECHNICAL DATA T O UL CSA SETI M TIL113 BABT 6-Pin DIP Optoisolators Darlington Output STYLE 1 PLASTIC The MTIL113 device consists of a gallium arsenide infrared emitting diode optically coupled to a monolithic silicon photodarlington detector.
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MTIL113/D
TIL113
MTIL113
381 motorola
DIODE 8827
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ISO220
Abstract: No abstract text available
Text: MOTOROLA Order this document by M4N25/D SEMICONDUCTOR TECHNICAL DATA TO UL <§•* CSA SET! BABT M4N25 6-Pin DIP Optoisolators Transistor Output STYLE 1 PLASTIC The M4N25 device consists of a gallium arsenide infrared emitting diode optically coupled to a silicon NPN phototransistor detector.
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M4N25/D
M4N25
M4N25
ISO220
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Untitled
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA & VDE UL & ®®®® C6A 8e n BEMKO DEMKO NEMKO BABT GlobalOptotsotator 6-Pin D IP O ptoisolators Darlington Output Low Input Current H11B1* H11B3 [CTR • 500% Min] [CTR *100% Min] •Motorola Preferred Device The H11B1 and H11B3 devices consist of a gallium arsenide infrared emitting
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H11B1
H11B3
H11B1*
H11B3
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4n3b
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA VDE GlobalOptolsolator UL f t . CSA ®®®® SETI SEMKO DEMKO NEMKQ BABT 6-Pin DIP Optoisolators TVansistor Output 4N38 4N38A* [CTR = 20% Min] 'Motorola Preferred Device The 4N38 and 4N38A 1 devices consist of a gallium arsenide infrared
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4N38A
4N38A*
4N38A
VCC-10V
4n3b
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til117 motorola
Abstract: No abstract text available
Text: MOTOROLA Order this document by MTIL117/D SEMICONDUCTOR TECHNICAL DATA UL CSA SETI BABT M TIL117 6-Pin DIP Optoisolator Transistor Output STYLE 1 PLASTIC The MTIL117 device consists of a gallium arsenide infrared emitting diode optically coupled to a monolithic silicon phototransistor detector.
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MTIL117/D
TIL117
MTIL117
MTIL117
til117 motorola
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M4N35
Abstract: No abstract text available
Text: MOTOROLA Order this document by M4N35/D SEMICONDUCTOR TECHNICAL DATA TO UL CSA SETI BABT 6-Pin DIP Optoisolators Transistor Output The M 4N 35 device consists of a gallium arsenide infrared emitting diode optically coupled to a monolithic silicon phototransistor detector.
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M4N35/D
M4N35
M4N35
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