MOTOROLA TRANSISTOR 279 Search Results

MOTOROLA TRANSISTOR 279 Result Highlights (5)

Part	Manufacturer	Description
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns
XPQR8308QB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL
XPQ1R00AQB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL
TK190U65Z	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL

MOTOROLA TRANSISTOR 279 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
MGY25N120 Abstract: No abstract text available Text: MOTOROLA Order this document by MGY25N120/D SEMICONDUCTOR TECHNICAL DATA Designer's  Data Sheet MGY25N120 Insulated Gate Bipolar Transistor Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate This Insulated Gate Bipolar Transistor IGBT uses an advanced	Original	PDF	MGY25N120/D MGY25N120 MGY25N120
MGY25N120 Abstract: No abstract text available Text: MOTOROLA Order this document by MGY25N120/D SEMICONDUCTOR TECHNICAL DATA Designer's Data Sheet Insulated Gate Bipolar Transistor MGY25N120 Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate This Insulated Gate Bipolar Transistor IGBT uses an advanced	Original	PDF	MGY25N120/D MGY25N120 MGY25N120
transistor motorola 236 Abstract: MGY25N120 Text: MOTOROLA Order this document by MGY25N120/D SEMICONDUCTOR TECHNICAL DATA Designer's  Data Sheet MGY25N120 Insulated Gate Bipolar Transistor Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate This Insulated Gate Bipolar Transistor IGBT uses an advanced	Original	PDF	MGY25N120/D MGY25N120 MGY25N120/D* transistor motorola 236 MGY25N120
BU108 Abstract: BDT3 2SC1943 2SC1419 BU326 BU100 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJE8503A* Advance Information SWITCHMODE Series *Motorola Preferred Device NPN Bipolar Power Transistor POWER TRANSISTORS 5.0 AMPERES 1500 VOLTS — BVCES 80 WATTS The MJE8503A transistor is designed for high voltage, high speed, power switching	Original	PDF	MJE8503A* MJE8503A WATT32 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B BU108 BDT3 2SC1943 2SC1419 BU326 BU100
2SA835 Abstract: transistor D 1557 bu806 equivalent 2SD436 2SD669 equivalent BU108 TL 188 TRANSISTOR PNP 2Sd525 equivalent 2sa1046 2N6021 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJE9780* Advance Information PNP Silicon Power Transistor *Motorola Preferred Device The MJE9780 is designed for vertical output of 14–inch to 17–inch televisions and CRT monitors, as well as other applications requiring a 150 volt PNP transistor.	Original	PDF	MJE9780* MJE9780 220AB mAdc/10 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A 2SA835 transistor D 1557 bu806 equivalent 2SD436 2SD669 equivalent BU108 TL 188 TRANSISTOR PNP 2Sd525 equivalent 2sa1046 2N6021
transistor bd4202 Abstract: motorola AN485 transistor tip120 motorola MJ480 MJE802 MOTOROLA TRANSISTOR REPLACEMENT GUIDE 2SC495 transistor MJE1100 MOTOROLA BUX98A MJE170 motorola Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BUL45 * BUL45F*  Data Sheet Designer's NPN Silicon Power Transistor High Voltage SWITCHMODE t Series *Motorola Preferred Device POWER TRANSISTOR 5.0 AMPERES 700 VOLTS 35 and 75 WATTS Designed for use in electronic ballast light ballast and in Switchmode Power	Original	PDF	BUL45 BUL45F* BUL45F, E69369 RATING32 TIP73B TIP74 TIP74A TIP74B TIP75 transistor bd4202 motorola AN485 transistor tip120 motorola MJ480 MJE802 MOTOROLA TRANSISTOR REPLACEMENT GUIDE 2SC495 transistor MJE1100 MOTOROLA BUX98A MJE170 motorola
2SD436 Abstract: mje15033 replacement BU108 MJE340 MOTOROLA 3140 BD VCC 3802 BU326 BU100 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJE18006 * MJF18006 *  Data Sheet SWITCHMODE Designer's *Motorola Preferred Device NPN Bipolar Power Transistor For Switching Power Supply Applications POWER TRANSISTOR 6.0 AMPERES 1000 VOLTS 40 and 100 WATTS The MJE/MJF18006 have an applications specific state–of–the–art die designed	Original	PDF	MJE18006 MJF18006 MJE/MJF18006 MJF18006, Case32 TIP73B TIP74 TIP74A TIP74B TIP75 2SD436 mje15033 replacement BU108 MJE340 MOTOROLA 3140 BD VCC 3802 BU326 BU100
EQUIVALENT FOR mjf18004 Abstract: 2N3055 plastic BU 647 motorola MJ480 motorola AN485 transistor 3655 BU108 BD139 fall time 2N6491 equivalent BD139 circuits Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA  Data Sheet SWITCHMODE MJE18004 * MJF18004 * Designer's NPN Bipolar Power Transistor For Switching Power Supply Applications *Motorola Preferred Device POWER TRANSISTOR 5.0 AMPERES 1000 VOLTS 35 and 75 WATTS The MJE/MJF18004 have an applications specific state–of–the–art die designed	Original	PDF	MJE/MJF18004 MJF1832 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C EQUIVALENT FOR mjf18004 2N3055 plastic BU 647 motorola MJ480 motorola AN485 transistor 3655 BU108 BD139 fall time 2N6491 equivalent BD139 circuits
k 3563 Abstract: 2N6133 equivalent BU108 of ic BD140 2N6407 replacement for TIP147 RCA29 RCA1C03 BUS47AP BD 440 PNP transistors Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA  Data Sheet SWITCHMODE BUL147* BUL147F* Designer's NPN Bipolar Power Transistor For Switching Power Supply Applications *Motorola Preferred Device POWER TRANSISTOR 8.0 AMPERES 700 VOLTS 45 and 125 WATTS The BUL147/BUL147F have an applications specific state–of–the–art die designed	Original	PDF	BUL147/BUL147F BUL147F, Case32 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B k 3563 2N6133 equivalent BU108 of ic BD140 2N6407 replacement for TIP147 RCA29 RCA1C03 BUS47AP BD 440 PNP transistors
2sc115 Abstract: BU108 2sc2270 2N6109 BD743D sec tip42c replacement for TIP147 TIP2955 DATA MJ1000 NSP2100 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA  Data Sheet SWITCHMODE BUL44 * BUL44F* Designer's NPN Bipolar Power Transistor For Switching Power Supply Applications *Motorola Preferred Device POWER TRANSISTOR 2.0 AMPERES 700 VOLTS 40 and 100 WATTS The BUL44/BUL44F have an applications specific state–of–the–art die designed	Original	PDF	BUL44/BUL44F BUL44F, Recognize32 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B 2sc115 BU108 2sc2270 2N6109 BD743D sec tip42c replacement for TIP147 TIP2955 DATA MJ1000 NSP2100
2sc1826 transistor Abstract: MJE15020 MJE18008 equivalent MJ13010 MJF18008 equivalent 2N6025 MJ2955 replacement BU108 NSP2480 replacement for TIP147 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJE18008 * MJF18008 *  Data Sheet SWITCHMODE Designer's *Motorola Preferred Device NPN Bipolar Power Transistor For Switching Power Supply Applications POWER TRANSISTOR 8.0 AMPERES 1000 VOLTS 45 and 125 WATTS The MJE/MJF18008 have an applications specific state–of–the–art die designed	Original	PDF	MJE18008 MJF18008 MJE/MJF18008 MJF18008, Case32 TIP73B TIP74 TIP74A TIP74B TIP75 2sc1826 transistor MJE15020 MJE18008 equivalent MJ13010 MJF18008 equivalent 2N6025 MJ2955 replacement BU108 NSP2480 replacement for TIP147
MJE105 Abstract: 2sd478 2SC107 MJ4032 MOTOROLA MJE3055 equivalent TIP2955 DATA MOTOROLA 2N3902 bd139 3v bd561 mje3055 to-220 st Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA  Data Sheet SWITCHMODE MJE18002* MJF18002* Designer's NPN Bipolar Power Transistor For Switching Power Supply Applications *Motorola Preferred Device POWER TRANSISTOR 2.0 AMPERES 1000 VOLTS 25 and 50 WATTS The MJE/MJF18002 have an applications specific state–of–the–art die designed	Original	PDF	MJE/MJF18002 MJF18002, E69369 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B MJE105 2sd478 2SC107 MJ4032 MOTOROLA MJE3055 equivalent TIP2955 DATA MOTOROLA 2N3902 bd139 3v bd561 mje3055 to-220 st
6aa marking Abstract: No abstract text available Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA DTA114YE Preliminary Data Sheet Bias Resistor Transistor PNP Silicon Surface Mount Transistor with Monolithic Bias Resistor Network 3 2 The BRT Bias Resistor Transistor contains a single transistor with a monolithic	Original	PDF	DTA114YE 416/SC 6aa marking
MJ3001 equivalent Abstract: bd139 equivalent transistor equivalent book 2SC2073 2N3055 equivalent transistor NUMBER MJE371 equivalent bd139 equivalent transistor BU108 BDT65C equivalent 2sd313 equivalent darlington tip31 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJ10005*  Data Sheet Designer's SWITCHMODE Series NPN Silicon Power Darlington Transistor with Base-Emitter Speedup Diode *Motorola Preferred Device 20 AMPERE NPN SILICON POWER DARLINGTON TRANSISTORS 400 VOLTS 175 WATTS	Original	PDF	MJ10005 MJ10005* TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C MJ3001 equivalent bd139 equivalent transistor equivalent book 2SC2073 2N3055 equivalent transistor NUMBER MJE371 equivalent bd139 equivalent transistor BU108 BDT65C equivalent 2sd313 equivalent darlington tip31

MJE42 transistor Abstract: 2N6043 GENERAL ELECTRIC 2SC1096 BU108 tip35c motorola replacement for TIP147 transistor MJE6043 BC 3337 TIP34C equivalent BD263 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA  Data Sheet SWITCHMODE BUL146* BUL146F* Designer's NPN Bipolar Power Transistor For Switching Power Supply Applications *Motorola Preferred Device The BUL146/BUL146F have an applications specific state–of–the–art die designed	Original	PDF	BUL146/BUL146F Isolate32 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C MJE42 transistor 2N6043 GENERAL ELECTRIC 2SC1096 BU108 tip35c motorola replacement for TIP147 transistor MJE6043 BC 3337 TIP34C equivalent BD263
2N5037 Abstract: 2SC1903 2SC2159 mje15033 replacement bd7782 MJE2050 SDT7605 2SA835 BD279 svt6251 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BD808 BD810* Plastic High Power Silicon PNP Transistor *Motorola Preferred Device 10 AMPERE POWER TRANSISTORS PNP SILICON 60, 80 VOLTS 90 WATTS . . . designed for use in high power audio amplifiers utilizing complementary or quasi	Original	PDF	BD808 BD810* TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C 2N5037 2SC1903 2SC2159 mje15033 replacement bd7782 MJE2050 SDT7605 2SA835 BD279 svt6251
ST T4 3580 Abstract: BU108 bdw93c applications transistor bd136 in dpak packaging 2SC103 ir411 TRANSISTOR BC 384 BDX54 2SB56 IC 714 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJD243* Plastic Power Transistor DPAK For Surface Mount Applications *Motorola Preferred Device . . . designed for low voltage, low–power, high–gain audio amplifier applications. • Collector–Emitter Sustaining Voltage — VCEO sus = 100 Vdc (Min) @ IC = 10 mAdc	Original	PDF	MJD243* TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C 2N6488 ST T4 3580 BU108 bdw93c applications transistor bd136 in dpak packaging 2SC103 ir411 TRANSISTOR BC 384 BDX54 2SB56 IC 714
automotive ignition tip162 Abstract: bc337 cross-reference BU108 BD390 cross reference replacement transistor BC337 BUX48A 2SD1815 "cross reference" TIP102 Darlington transistor Motorola MJ15022 MJ1000 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BU323AP NPN Silicon Darlington Power Transistor The BU323AP is a monolithic darlington transistor designed for automotive ignition, switching regulator and motor control applications. • Collector–Emitter Sustaining Voltage —	Original	PDF	BU323AP BU323AP TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C automotive ignition tip162 bc337 cross-reference BU108 BD390 cross reference replacement transistor BC337 BUX48A 2SD1815 "cross reference" TIP102 Darlington transistor Motorola MJ15022 MJ1000
BUS48AP Abstract: 2SC1381 mje15033 replacement 2SA698 BD477 BD139.16 2N307 2SC1224 2SD549 BD139.10 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BD166 Plastic Medium Power Silicon PNP Transistor 1.5 AMPERE POWER TRANSISTOR PNP SILICON 45 VOLTS 20 WATTS . . . designed for use as audio amplifiers and drivers utilizing complementary or quasi complementary circuits.	Original	PDF	BD166 BD165 BD166 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B BUS48AP 2SC1381 mje15033 replacement 2SA698 BD477 BD139.16 2N307 2SC1224 2SD549 BD139.10
marking 651 sot223 Abstract: No abstract text available Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN Silicon Planar Epitaxial Transistor PZT651T1 Motorola Preferred Device This NPN Silicon Epitaxial transistor is designed for use in industrial and consumer applications. The device is housed in the SOT-223 package which is designed for	OCR Scan	PDF	PZT651T1 OT-223 marking 651 sot223
marking 651 Abstract: marking 651 sot223 PZT651T3 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN Silicon Planar E pitaxial Transistor PZT651T1 Motorola Preferred Device This NPN Silicon Epitaxial transistor is designed for use in industrial and consumer applications. The device is housed in the SOT-223 package which is designed for	OCR Scan	PDF	OT-223 PZT651T1 inch/1000 PZT651T3 inch/4000 marking 651 marking 651 sot223
GY25N120 Abstract: n120 30 igbt Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Designer’s Data Sheet MGY25N120 Insulated Gate Bipolar Transistor Motorola Preferred Device N-Channel Enhancement-Mode Silicon Gate This Insulated Gate Bipolar Transistor IGBT uses an advanced termination scheme to provide an enhanced and reliable high	OCR Scan	PDF	MGY25 O-264 GY25N120 0E-05 0E-04 0E-03 0E-02 0E-01 GY25N120 n120 30 igbt
MRF477 Abstract: MRF477 equivalent mrf477 transistor 2 SC 2673 Q 1N4719 transistor MRF477 1S75 221A-04 RF POWER TRANSISTOR NPN 1270H Text: MOTOROLA SC XSTRS/R F 4bE D L3ti72Sl4 □D'mb'iE 4 MOTOROLA MOTb T -S 3 -/Í SEMICONDUCTOR TECHNICAL DATA MRF477 T h e R F L in e 40 W (PEP) - 3 0 MHz RF POWER TRANSISTOR NPN SILICON RF POWER TRANSISTOR NPN SILIC ON . . . designed prim arily for application as a high-power linear	OCR Scan	PDF	fci3ti72S4 MRF477 T0-220AB L3b72S4 T-33-11 Pout-40WPEP MRF477 MRF477 equivalent mrf477 transistor 2 SC 2673 Q 1N4719 transistor MRF477 1S75 221A-04 RF POWER TRANSISTOR NPN 1270H
Motorola AN-546 Abstract: MRF460 an-546 motorola AN282A motorola application note AN-546 AN546 2N6368 2648A str 2652 motorola an-282a application Text: 1EE D I b3b 72 54 00fl7fc.?fc> M \| MOTOROLA SC MOTOROLA r'33-/r X STR S/R SEM ICO NDUCTOR TECHNICAL DATA MRF460 T h e R F L in e 40 W PEP - 3 0 MHz 2 RF POWER TRANSISTOR NPN SILICON RF POWER TRANSISTOR NPN SILICON . . . designed primarily for applications as a high-power linear ampli	OCR Scan	PDF	00fl7fc. 33-/r MRF460 2N6368 RF460 AN-282A. AN-546. Motorola AN-546 MRF460 an-546 motorola AN282A motorola application note AN-546 AN546 2N6368 2648A str 2652 motorola an-282a application

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MOTOROLA TRANSISTOR 279 Search Results

MOTOROLA TRANSISTOR 279 Result Highlights (5)

MOTOROLA TRANSISTOR 279 Datasheets Context Search

MGY25N120

MGY25N120

transistor motorola 236

BU108

2SA835

transistor bd4202

2SD436

EQUIVALENT FOR mjf18004

k 3563

2sc115

2sc1826 transistor

MJE105

6aa marking

MJ3001 equivalent

MJE42 transistor

2N5037

ST T4 3580

automotive ignition tip162

BUS48AP

marking 651 sot223

marking 651

GY25N120

MRF477

Motorola AN-546