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    ROHM Semiconductor MP6Z13TR

    TRANS NPN/PNP 50V 3A MPT6
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey MP6Z13TR Reel 1,000
    • 1 -
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    • 100 -
    • 1000 $0.36705
    • 10000 $0.28112
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    MP6Z1 Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    MP6Z13TR ROHM Transistors (BJT) - Arrays, Discrete Semiconductor Products, TRANS NPN/PNP 50V 3A 6MPT Original PDF
    MP6Z1TR ROHM Complex Transistor (BIP+BIP); Package: MPT6; Constitution materials list: Packing style: Taping; Package quantity: 1000; Original PDF

    MP6Z1 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: Data Sheet Midium Power Transistors ±50V / ±3A MP6Z13  Structure NPN/PNP Silicon epitaxial planar transistor  Dimensions (Unit : mm) MPT6 (Dual)  Features 1) Low saturation voltage, typically V CE (sat) = 0.35V (Max.) (I C / I B= 1A / 50mA) V CE (sat) = -0.40V (Max.) (I C / I B= -1A / -50mA)


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    MP6Z13 -50mA) R1120A PDF

    Untitled

    Abstract: No abstract text available
    Text: Data Sheet Midium Power Transistors ±30V / ±1A MP6Z11  Structure NPN/PNP Silicon epitaxial planar transistor  Dimensions (Unit : mm) MPT6 (Dual)  Features Low saturation voltage, typically VCE (sat) = 0.35V (Max.) (I C / I B= 500mA / 25mA) VCE (sat) = -0.35V (Max.) (I C / I B= -500mA / -25mA)


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    MP6Z11 500mA -500mA -25mA) R1120A PDF

    Untitled

    Abstract: No abstract text available
    Text: Medium Power Transistor -32V, -1A MP6Z1 Dimensions (Unit : mm) Applications Low frequency amplifier MPT6 Features 1) Low VCE(sat) VCE(sat) = -0.2V(Typ.) (IC / IB = -500mA / -50mA) 2) Contains 2SD1664-die and 2SB1132-die in a package. (6) (5) (4)


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    -500mA -50mA) 2SD1664-die 2SB1132-die R1010A PDF

    Untitled

    Abstract: No abstract text available
    Text: MP6Z1 Transistors Medium Power Transistor -32V, -1A MP6Z1 zApplications Low frequency amplifier zDimensions (Unit : mm) MPT6 zFeatures 1) Low VCE(sat) VCE(sat) = -0.2V(Typ.) (IC /IB = -500mA / -50mA) 2) Contains 2SD1664-die and 2SB1132-die in a package.


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    -500mA -50mA) 2SD1664-die 2SB1132-die PDF

    Untitled

    Abstract: No abstract text available
    Text: Data Sheet Midium Power Transistors ±50V / ±3A MP6Z13  Structure NPN/PNP Silicon epitaxial planar transistor  Dimensions (Unit : mm) MPT6 (Dual)  Features 1) Low saturation voltage, typically V CE (sat) = 0.35V (Max.) (I C / I B= 1A / 50mA) V CE (sat) = -0.40V (Max.) (I C / I B= -1A / -50mA)


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    MP6Z13 -50mA) R1120A PDF

    Untitled

    Abstract: No abstract text available
    Text: MP6Z1 Transistors Medium Power Transistor -32V, -1A MP6Z1 zApplications Low frequency amplifier zDimensions (Unit : mm) MPT6 zFeatures 1) Low VCE(sat) VCE(sat) = -0.2V(Typ.) (IC / IB = -500mA / -50mA) 2) Contains 2SD1664-die and 2SB1132-die in a package.


    Original
    -500mA -50mA) 2SD1664-die 2SB1132-die PDF

    MP6Z1

    Abstract: No abstract text available
    Text: MP6Z1 Transistors Medium Power Transistor -32V, -1A MP6Z1 zApplications Low frequency amplifier zDimensions (Unit : mm) MPT6 zFeatures 1) Low VCE(sat) VCE(sat) = -0.2V(Typ.) (IC / IB = -500mA / -50mA) 2) Contains 2SD1664-die and 2SB1132-die in a package.


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    -500mA -50mA) 2SD1664-die 2SB1132-die MP6Z1 PDF

    Untitled

    Abstract: No abstract text available
    Text: Midium Power Transistors ±50V / ±1A MP6Z12  Structure NPN/PNP Silicon epitaxial planar transistor  Dimensions (Unit : mm) MPT6 (Dual)  Features 1) Low saturation voltage, typically V CE (sat) = 0.35V (Max.) (I C / I B= 500mA / 25mA) V CE (sat) = -0.40V (Max.) (I C / I B= -500mA / -25mA)


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    MP6Z12 500mA -500mA -25mA) R1010A PDF

    2SC6144

    Abstract: IMD16A potential divider 2SA1576UB DTD513Z MP6T3 2SCR514 2SA1514K equivalent 2SCR543 2SC6114
    Text: 2010 Product Catalog Discrete Semiconductors Bipolar Transistors Digital Transistors Bipolar Transistors ROHM bipolar transistors were developed to be energy efficient, highly reliable, and compact. A wide range of products are offered, from small-signal and low profile models to high power products.


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    R0039A 52P6215E 2SC6144 IMD16A potential divider 2SA1576UB DTD513Z MP6T3 2SCR514 2SA1514K equivalent 2SCR543 2SC6114 PDF

    2SA1576UB

    Abstract: 2SC1740s equivalent transistor digital 47k 22k PNP NPN 2sd198 2SC6114 2sc401 2SB1240 2SB1694 2SC5865 2sD2703
    Text: 2009 Product Catalog Discrete Semiconductors Bipolar Transistors Digital Transistors Bipolar Transistors ROHM bipolar transistors were developed to be energy efficient, highly reliable, and compact. A wide range of products are offered, from small-signal an low profile models to high power products.


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    R0039A 51P6029E 2SA1576UB 2SC1740s equivalent transistor digital 47k 22k PNP NPN 2sd198 2SC6114 2sc401 2SB1240 2SB1694 2SC5865 2sD2703 PDF