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    MPS3638 EQUIVALENT Search Results

    MPS3638 EQUIVALENT Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TMP89FS60AUG Toshiba Electronic Devices & Storage Corporation 8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/LQFP64-P-1010-0.50E Visit Toshiba Electronic Devices & Storage Corporation
    TMP89FS63AUG Toshiba Electronic Devices & Storage Corporation 8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/LQFP52-P-1010-0.65 Visit Toshiba Electronic Devices & Storage Corporation
    TMP89FS60BFG Toshiba Electronic Devices & Storage Corporation 8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/P-LQFP64-1414-0.80-002 Visit Toshiba Electronic Devices & Storage Corporation
    TMP89FS63BUG Toshiba Electronic Devices & Storage Corporation 8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/P-LQFP52-1010-0.65-002 Visit Toshiba Electronic Devices & Storage Corporation
    TMP89FS62AUG Toshiba Electronic Devices & Storage Corporation 8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/LQFP44-P-1010-0.80A Visit Toshiba Electronic Devices & Storage Corporation

    MPS3638 EQUIVALENT Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    2n4403 motorola

    Abstract: MPS3638 MPS3638 equivalent transistor 2n4403 equivalent motorola 2n4403 2N4402 2N4403 MPS3638A
    Text: MOTOROLA Order this document by MPS3638/D SEMICONDUCTOR TECHNICAL DATA Switching Transistors MPS3638,A PNP Silicon COLLECTOR 3 2 BASE 1 EMITTER 1 2 MAXIMUM RATINGS Rating Symbol Value Unit Collector – Emitter Voltage VCEO –25 Vdc Collector – Emitter Voltage


    Original     		MPS3638/D MPS3638 MPS3638/D* 2n4403 motorola MPS3638 equivalent transistor 2n4403 equivalent motorola 2n4403 2N4402 2N4403 MPS3638A PDF

    2N4402

    Abstract: MPS3638A MPS3638A motorola MOTOROLA MPS3638A MPS-3638A
    Text: MOTOROLA Order this document by MPS3638A/D SEMICONDUCTOR TECHNICAL DATA Switching Transistor PNP Silicon MPS3638A COLLECTOR 3 2 BASE 1 EMITTER MAXIMUM RATINGS 1 Rating Symbol Value Unit Collector – Emitter Voltage VCEO –25 Vdc Collector – Emitter Voltage


    Original     		MPS3638A/D MPS3638A 2N4402 MPS3638A MPS3638A motorola MOTOROLA MPS3638A MPS-3638A PDF

    BC547 hie hre hfe

    Abstract: hie for bc547b BC237 BC338 hie hre hfe sot-223 body marking A G Q E mps3638
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Switching Transistor PNP Silicon MPS3638A COLLECTOR 3 2 BASE 1 EMITTER MAXIMUM RATINGS 1 Rating Symbol Value Unit Collector – Emitter Voltage VCEO –25 Vdc Collector – Emitter Voltage VCES –25 Vdc Collector – Base Voltage


    Original     		MPS3638A 226AA) Junct218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 BC547 hie hre hfe hie for bc547b BC237 BC338 hie hre hfe sot-223 body marking A G Q E mps3638 PDF

    2n1613 equivalent

    Abstract: BC237 diode l 0607
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BAV99WT1 BAV99RWT1 SC-70/SOT-323 Dual Series Switching Diode Motorola Preferred Devices The BAV99WT1 is a smaller package, equivalent to the BAV99LT1. Suggested Applications • ESD Protection • Polarity Reversal Protection


    Original     		SC-70/SOT-323 BAV99WT1 BAV99LT1. BAV99RWT1 MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 2n1613 equivalent BC237 diode l 0607 PDF

    BC237

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA JFET Chopper MMBFJ175LT1 P–Channel — Depletion Motorola Preferred Device 2 SOURCE 3 GATE 3 1 DRAIN 1 2 MAXIMUM RATINGS Rating Drain – Gate Voltage Reverse Gate – Source Voltage Symbol Value Unit VDG 25 V VGS r


    Original     		MMBFJ175LT1 236AB) Ga218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 BC237 PDF

    2N16

    Abstract: BC237 BCY72
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA  MGSF1P02ELT1 Preliminary Information Motorola Preferred Device Low rDS on Small-Signal MOSFETs TMOS Single P-Channel Field Effect Transistors Part of the GreenLine Portfolio of devices with energy– conserving traits.


    Original     		MGSF1P02ELT1 L218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 MV1642 2N16 BC237 BCY72 PDF

    2n2222 h 331 transistors

    Abstract: 2n2222 -331 transistors 2n2222 331 transistors BC237 2n2222 h 331 MARKING CODE diode sod123 W1
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA  MGSF3442XT1 Preliminary Information Motorola Preferred Device Low rDS on Small-Signal MOSFETs TMOS Single N-Channel Field Effect Transistors  Part of the GreenLine Portfolio of devices with energy– conserving traits.


    Original     		MGSF3442XT1 T218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 MV1642 2n2222 h 331 transistors 2n2222 -331 transistors 2n2222 331 transistors BC237 2n2222 h 331 MARKING CODE diode sod123 W1 PDF

    BC237

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA JFET Chopper P–Channel — Depletion 2 SOURCE MMBFJ177LT1 3 GATE 1 DRAIN 3 1 MAXIMUM RATINGS Rating Drain–Gate Voltage Reverse Gate–Source Voltage Symbol Value Unit VDG 25 Vdc VGS r – 25 Vdc 2 CASE 318 – 08, STYLE 10


    Original     		MMBFJ177LT1 236AB) MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 BC237 PDF

    BC237

    Abstract: MPSA06 346
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA  MMBD1000LT1 MMBD2000T1 MMBD3000T1 MMSD1000T1 Switching Diode Part of the GreenLine Portfolio of devices with energy–conserving traits. This switching diode has the following features: • Very Low Leakage ≤ 500 pA promotes extended battery life by decreasing energy waste


    Original     		MMBD1000LT1 MMBD2000T1 MMBD3000T1 MMSD1000T1 MMBD1000LT1 OT-23 O-236AB) V218A MSC1621T1 MSC2404 BC237 MPSA06 346 PDF

    BC237

    Abstract: MARKING CODE diode sod123 W1 K 2056 transistor
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA  MGSF3455XT1 Preliminary Information Motorola Preferred Device Low rDS on Small-Signal MOSFETs TMOS Single P-Channel Field Effect Transistors  Part of the GreenLine Portfolio of devices with energy– conserving traits.


    Original     		MGSF3455XT1 T218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 MV1642 BC237 MARKING CODE diode sod123 W1 K 2056 transistor PDF

    AL102 ATES

    Abstract: 2N2222A mps KR206 AD149 TIS58 TIS88 SFT353 2N2431 2N4265 BFY29
    Text: SECOND BOOK OF TRAISKTIR EQUIVALENTS AIR SPIRTITOTER IT I.I.OMMI BERNARD BABANI publishing LTD The Grampians Shepherds Bush Road London W67NF England. Although every care Is taken with the preparation of this book, the publishers will not be responsible


    OCR Scan     		Trans-611 DT1521 2N2270 BC107-182KS ESC182KAS ESC182KBS ESC1Q8-183KS EiC183KBS 8C183KCS BC109-184KS AL102 ATES 2N2222A mps KR206 AD149 TIS58 TIS88 SFT353 2N2431 2N4265 BFY29 PDF

    TE 2549 MOTOROLA

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Switching Transistor MPS3638A PNP Silicon COLLECTOR 3 1 EMITTER MAXIMUM RATINGS Rating C o lle c to r-E m itte r Voltage Symbol Value Unit Vdc V dc VCEO -2 5 C o lle c to r-E m itte r Voltage VCES -2 5 C o lle c to r-B a s e Voltage


    OCR Scan     		MPS3638A TE 2549 MOTOROLA PDF

    PS3638

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MPS3638A/D SEMICONDUCTOR TECHNICAL DATA S w itching Transistor M PS3638A PNP Silicon COLLECTOR 3 / EMITTER MAXIMUM RATINGS Rating Symbol Value Unit C o lle c to r-E m itte r V oltag e VCEO -2 5 V dc C o lle c to r-E m itte r V oltag e


    OCR Scan     		MPS3638A/D PS3638A O-226AA) PS3638 PDF

    2n4125 equivalent

    Abstract: 2N3904 2N3905 Equivalent JEDEC 2N3904 2N3904 RN h 2n3904 2N3903 2N3905 NPN+2n3904 2N4123
    Text: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-92 PACKAGE V C E s a t E b v CEO Device Type @ 1 0 m A -(V) Min. Max. @ l c (mA) 2N 3903 2N3904 2N3905 2N3906 2N4123 NPN NPN PNP PNP NPN 40 40 40 40 30 50 100 50 100 50 150 300 150 300 150 2N 4 1 24


    OCR Scan     		2N3903 2N3904 2N3905 2N3906 2N4123 2N4124 2N4125 2N4126 2N4400 2n4125 equivalent 2N3905 Equivalent JEDEC 2N3904 2N3904 RN h 2n3904 NPN+2n3904 PDF

    2N3906 JEDEC

    Abstract: 2N3906 hie 2N3906 2N3905 Equivalent 2n3906 equivalent 2n3906 npn 2N3903 2N3904 2N3905 2N4123
    Text: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-92 PA CK A GE V C E sa t E b v CEO Device Type @ 1 0 m A -(V) Min. Max. @ l c (mA) 2N 3903 2N3904 2N3905 2N3906 2N4123 NPN NPN PNP PNP NPN 40 40 40 40 30 50 100 50 100 50 150 300 150 300 150


    OCR Scan     		2N3903 2N3904 2N3905 2N3906 2N4123 2N4124 2N4125 2N4126 2N4400 2N3906 JEDEC 2N3906 hie 2N3905 Equivalent 2n3906 equivalent 2n3906 npn PDF

    GES5822

    Abstract: GES5823 GES5824 GES5825 GES5826 GES5827 GES5828 GES6000 GES6001 GES6002
    Text: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-92 PA CK A GE Device b v ceo Type @10mA V Min. 1 60 II 60 40 • m 40 GES5822 NPhl GES5823 a a GES5824 GES5825 I GES5826 GES5827 GES5828 GES6000 GES6001 GES6002 GES6003 GES6004 GES6005 GES6006 GES6007


    OCR Scan     		GES5822 GES5823 GES5824 GES5825 GES5826 GES5827 GES5828 GES6000 GES6001 GES6002 PDF

    GES6220

    Abstract: GES5822 GES5823 GES5824 GES5825 GES5826 GES5827 GES5828 GES6000 GES6001
    Text: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO -92 PACKAGE Device 'F E bvceo VCE sat Type @10mA(V) Min. Max. @ lc(mA) I I • m 1 GES5822 NPhl 60 GES5823 a a 60 GES5824 40 GES5825 I 40 GES5826 40 00 00 60 00 «0 200 200 120 200 300 GES5827 NPft


    OCR Scan     		GES5822 GES5823 GES5824 GES5825 GES5826 GES5827 GES5828 GES6000 QES6004- GES6004: GES6220 GES6001 PDF

    GES5822

    Abstract: GES5823 GES5824 GES5825 GES5826 GES5827 GES5828 GES6000 GES6001 GES6002
    Text: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-92 PA CK A GE Device 1 60 GES5822 NPhl GES5823 a a GES5824 GES5825 I GES5826 40 GES5827 GES5828 GES6000 GES6001 GES6002 GES6003 GES6004 GES6005 GES6006 GES6007 GES6010 GES6011 GES6012 GES6013 GES6014


    OCR Scan     		GES5822 GES5823 GES5824 GES5825 GES5826 GES5827 GES5828 GES6000 40LECTOR-BASE ges6007 GES6001 GES6002 PDF

    GES5822

    Abstract: GES5823 GES5824 GES5825 GES5826 GES5827 GES5828 GES6000 GES6001 GES6002
    Text: SILICON S IG N A L TRAN SIS TO R S G E N E R A L PURPOSE AMPLIFIERS TO-92 P A C K A G E Device bvceo Type @ 10mA V Min. 1 60 II 60 40 • m 40 GES5822 NPhl GES5823 a a GES5824 GES5825 I GES5826 GES5827 GES5828 GES6000 GES6001 GES6002 GES6003 GES6004 GES6005


    OCR Scan     		to-92 GES5822 GES5823 GES5824 GES5825 GES5826 GES5827 GES5828 GES6000 QES6004- GES6001 GES6002 PDF

    GES5822

    Abstract: GES5823 GES5824 GES5825 GES5826 GES5827 GES5828 GES6000 GES6001 GES6002
    Text: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-92 PACKAGE Type @ 10m A V Min. I I • m 1 00 00 60 00 «0 200 200 120 200 300 GES5827 GES5828 GES6000 GES6001 GES6002 40 40 25 25 25 50 00 00 OB WS 500 800 300 300 500 25 40 40 40 40 00 00 oo 00 00


    OCR Scan     		GES5822 GES5823 GES5824 GES5825 GES5826 GES5827 GES5828 GES6000 GES6001 GES6002 PDF

    GES5822

    Abstract: GES5823 GES5824 GES5825 GES5826 GES5827 GES5828 GES6000 GES6001 GES6002
    Text: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-92 P A C K A G E Device bvceo Type @10mA V Min. 1 60 II 60 40 • m 40 GES5822 NPhl GES5823 a a GES5824 GES5825 I GES5826 GES5827 GES5828 GES6000 GES6001 GES6002 GES6003 GES6004 GES6005 GES6006 GES6007


    OCR Scan     		GES5822 GES5823 GES5824 GES5825 GES5826 GES5827 GES5828 GES6000 ges6011, 6ES60II GES6001 GES6002 PDF

    TR 3904 HFE 100-300 SM

    Abstract: itt 3904 2N 3904 h2 c 2n3904, itt GES5822 GES5823 GES5824 GES5825 GES5826 GES5827
    Text: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-92 PACKAGE Type @ 10m A V Min. 1I •I m 00 00 60 00 «0 200 200 120 200 300 GES5827 NPft GES5828 GES6000 N M GES6001 GES6002 50 00 00 OB WS 500 800 300 300 500 NP» mp un 40 40 25 25 25 PHP NP* WM»


    OCR Scan     		GES5822 GES5823 GES5824 GES5825 GES5826 GES5827 GES5828 GES6000 r-04mi TR 3904 HFE 100-300 SM itt 3904 2N 3904 h2 c 2n3904, itt PDF

    BE10N

    Abstract: GES6012 GES5822 GES5823 GES5824 GES5825 GES5826 GES5827 GES5828 GES6000
    Text: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-92 PACKAGE Type @ 10m A V Min. I I • m 1 00 00 60 00 «0 200 200 120 200 300 GES5827 GES5828 GES6000 GES6001 GES6002 NPft NP» NM mp un 40 40 25 25 25 50 00 00 OB WS 500 800 300 300 500 GES6003 GES6004


    OCR Scan     		GES5822 GES5823 GES5824 GES5825 GES5826 GES5827 GES5828 GES6000 40volts GES60I0 BE10N GES6012 PDF

    2N3901

    Abstract: GES5822 GES5823 GES5824 GES5825 GES5826 GES5827 GES5828 GES6000 GES6001
    Text: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-92 P A C K A G E Device b v ceo Type @ 10mA V Min. 1 60 II 60 40 • m 40 GES5822 NPhl GES5823 a a GES5824 GES5825 I GES5826 GES5827 GES5828 GES6000 GES6001 GES6002 GES6003 GES6004 GES6005 GES6006


    OCR Scan     		GES5822 GES5823 GES5824 GES5825 GES5826 GES5827 GES5828 GES6000 GES60I GES6014, 2N3901 GES6001 PDF