2N4402
Abstract: MPS3638A MPS3638A motorola MOTOROLA MPS3638A MPS-3638A
Text: MOTOROLA Order this document by MPS3638A/D SEMICONDUCTOR TECHNICAL DATA Switching Transistor PNP Silicon MPS3638A COLLECTOR 3 2 BASE 1 EMITTER MAXIMUM RATINGS 1 Rating Symbol Value Unit Collector – Emitter Voltage VCEO –25 Vdc Collector – Emitter Voltage
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MPS3638A/D
MPS3638A
2N4402
MPS3638A
MPS3638A motorola
MOTOROLA MPS3638A
MPS-3638A
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PDF
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BC547 hie hre hfe
Abstract: hie for bc547b BC237 BC338 hie hre hfe sot-223 body marking A G Q E mps3638
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Switching Transistor PNP Silicon MPS3638A COLLECTOR 3 2 BASE 1 EMITTER MAXIMUM RATINGS 1 Rating Symbol Value Unit Collector – Emitter Voltage VCEO –25 Vdc Collector – Emitter Voltage VCES –25 Vdc Collector – Base Voltage
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MPS3638A
226AA)
Junct218A
MSC1621T1
MSC2404
MSD1819A
MV1620
MV1624
MV1636
MV1640
BC547 hie hre hfe
hie for bc547b
BC237
BC338 hie hre hfe
sot-223 body marking A G Q E
mps3638
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PDF
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BC158B
Abstract: BC158A LOW-POWER SILICON PNP 2SA677 2SA628 226M 2SA550
Text: LOW-POWER SILICON PNP Item Number Part Number V BR CEO 5 10 15 20 25 30 PN6076 V761 2SA628 L9015 L9015 MPS6172 BC186 MPS3638A BCX18 BCX18R Manufacturer CentralSemi SGS-Ates Solid Stlnc Semi Inc Advncd Semi Motorola See Index See Index See Index FerrantiLtd
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PN6076
2SA628
L9015
MPS6172
BC186
MPS3638A
BCX18
BCX18R
BC158B
BC158A
LOW-POWER SILICON PNP
2SA677
226M
2SA550
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PDF
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2n4403 motorola
Abstract: MPS3638 MPS3638 equivalent transistor 2n4403 equivalent motorola 2n4403 2N4402 2N4403 MPS3638A
Text: MOTOROLA Order this document by MPS3638/D SEMICONDUCTOR TECHNICAL DATA Switching Transistors MPS3638,A PNP Silicon COLLECTOR 3 2 BASE 1 EMITTER 1 2 MAXIMUM RATINGS Rating Symbol Value Unit Collector – Emitter Voltage VCEO –25 Vdc Collector – Emitter Voltage
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MPS3638/D
MPS3638
MPS3638/D*
2n4403 motorola
MPS3638 equivalent
transistor 2n4403 equivalent
motorola 2n4403
2N4402
2N4403
MPS3638A
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PDF
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BC237
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA JFET Chopper MMBFJ175LT1 P–Channel — Depletion Motorola Preferred Device 2 SOURCE 3 GATE 3 1 DRAIN 1 2 MAXIMUM RATINGS Rating Drain – Gate Voltage Reverse Gate – Source Voltage Symbol Value Unit VDG 25 V VGS r
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MMBFJ175LT1
236AB)
Ga218A
MSC1621T1
MSC2404
MSD1819A
MV1620
MV1624
MV1636
BC237
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PDF
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2N16
Abstract: BC237 BCY72
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MGSF1P02ELT1 Preliminary Information Motorola Preferred Device Low rDS on Small-Signal MOSFETs TMOS Single P-Channel Field Effect Transistors Part of the GreenLine Portfolio of devices with energy– conserving traits.
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MGSF1P02ELT1
L218A
MSC1621T1
MSC2404
MSD1819A
MV1620
MV1624
MV1636
MV1640
MV1642
2N16
BC237
BCY72
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PDF
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2n2222 h 331 transistors
Abstract: 2n2222 -331 transistors 2n2222 331 transistors BC237 2n2222 h 331 MARKING CODE diode sod123 W1
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MGSF3442XT1 Preliminary Information Motorola Preferred Device Low rDS on Small-Signal MOSFETs TMOS Single N-Channel Field Effect Transistors Part of the GreenLine Portfolio of devices with energy– conserving traits.
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MGSF3442XT1
T218A
MSC1621T1
MSC2404
MSD1819A
MV1620
MV1624
MV1636
MV1640
MV1642
2n2222 h 331 transistors
2n2222 -331 transistors
2n2222 331 transistors
BC237
2n2222 h 331
MARKING CODE diode sod123 W1
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PDF
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2N643
Abstract: BC237 MARKING DP SOT-363 DO204AA
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MMBD1010LT1 MMBD2010T1 MMBD3010T1 Switching Diode Part of the GreenLine Portfolio of devices with energy–conserving traits. This switching diode has the following features: • Very Low Leakage ≤ 500 pA promotes extended battery life by decreasing energy waste. Guaranteed leakage limit is for each diode in the pair
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MMBD1010LT1
MMBD2010T1
MMBD3010T1
MMBD1010LT1
S218A
MSC1621T1
MSC2404
MSD1819A
MV1620
MV1624
2N643
BC237
MARKING DP SOT-363
DO204AA
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PDF
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BC237
Abstract: MMBD2005T1
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MMBD1005LT1 MMBD2005T1 MMBD3005T1 Switching Diode Part of the GreenLine Portfolio of devices with energy–conserving traits. This switching diode has the following features: • Very Low Leakage ≤ 500 pA promotes extended battery life by decreasing energy waste. Guaranteed leakage limit is for each diode in the pair
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MMBD1005LT1
MMBD2005T1
MMBD3005T1
MMBD1005LT1
MSC1621T1
MSC2404
MSD1819A
MV1620
MV1624
MV1636
BC237
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PDF
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BC237
Abstract: MARKING CODE diode sod123 W1
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MGSF3441XT1 Preliminary Information Motorola Preferred Device Low rDS on Small-Signal MOSFETs TMOS Single P-Channel Field Effect Transistors Part of the GreenLine Portfolio of devices with energy– conserving traits.
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MGSF3441XT1
T218A
MSC1621T1
MSC2404
MSD1819A
MV1620
MV1624
MV1636
MV1640
MV1642
BC237
MARKING CODE diode sod123 W1
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PDF
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BC237
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA JFET Chopper P–Channel — Depletion 2 SOURCE MMBFJ177LT1 3 GATE 1 DRAIN 3 1 MAXIMUM RATINGS Rating Drain–Gate Voltage Reverse Gate–Source Voltage Symbol Value Unit VDG 25 Vdc VGS r – 25 Vdc 2 CASE 318 – 08, STYLE 10
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MMBFJ177LT1
236AB)
MSC1621T1
MSC2404
MSD1819A
MV1620
MV1624
MV1636
MV1640
BC237
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PDF
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BC237
Abstract: MPSA06 346
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MMBD1000LT1 MMBD2000T1 MMBD3000T1 MMSD1000T1 Switching Diode Part of the GreenLine Portfolio of devices with energy–conserving traits. This switching diode has the following features: • Very Low Leakage ≤ 500 pA promotes extended battery life by decreasing energy waste
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MMBD1000LT1
MMBD2000T1
MMBD3000T1
MMSD1000T1
MMBD1000LT1
OT-23
O-236AB)
V218A
MSC1621T1
MSC2404
BC237
MPSA06 346
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PDF
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BC237
Abstract: MARKING CODE diode sod123 W1 K 2056 transistor
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MGSF3455XT1 Preliminary Information Motorola Preferred Device Low rDS on Small-Signal MOSFETs TMOS Single P-Channel Field Effect Transistors Part of the GreenLine Portfolio of devices with energy– conserving traits.
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MGSF3455XT1
T218A
MSC1621T1
MSC2404
MSD1819A
MV1620
MV1624
MV1636
MV1640
MV1642
BC237
MARKING CODE diode sod123 W1
K 2056 transistor
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PDF
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MMBF4856
Abstract: transistor equivalent 2n5551 BF245 application note MSC2404 MSC1621 74LS04 Fan Out 2n3819 equivalent transistor MMBF5486L bf245 equivalent MPS8093
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Advance Information MDC3105LT1 Motorola Preferred Device Integrated Relay/Solenoid Driver • Optimized to Switch 3 V to 5 V Relays from a 5 V Rail • Compatible with “TX’’ and “TQ’’ Series Telecom Relays Rated up to
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Automat218A
MSC1621T1
MSC2404
MSD1819A
MV1620
MV1624
MV1636
MV1640
MV1642
MV1644
MMBF4856
transistor equivalent 2n5551
BF245 application note
MSC1621
74LS04 Fan Out
2n3819 equivalent transistor
MMBF5486L
bf245 equivalent
MPS8093
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PDF
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MIL-STD-750 method 1037
Abstract: BC237 BF245 MPF4856
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA SOD-123 Schottky Barrier Diodes MMSD301T1 MMSD701T1 The MMSD301T1, and MMSD701T1 devices are spin–offs of our popular MMBD301LT1, and MMBD701LT1 SOT–23 devices. They are designed for high–efficiency UHF and VHF detector applications. Readily available to many other
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OD-123
MMSD301T1,
MMSD701T1
MMBD301LT1,
MMBD701LT1
MMSD301T1
MMSD701T1
m218A
MIL-STD-750 method 1037
BC237
BF245
MPF4856
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PDF
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BC237
Abstract: Fet BF245
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA TMOS FET Transistor N–Channel — Enhancement VN0300L 3 DRAIN Motorola Preferred Device 2 GATE 1 SOURCE MAXIMUM RATINGS Rating Symbol Value Unit Drain – Source Voltage VDSS 60 V Drain – Gate Voltage VDGR 60 V
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VN0300L
226AA)
MSC1621T1
MSC2404
MSD1819A
MV1620
MV1624
MV1636
MV1640
MV1642
BC237
Fet BF245
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PDF
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MPS751 equivalent
Abstract: MPS651 equivalent 2n2222 npn transistor footprint BC237 pnp for 2n3019 pnp bc547 transistor 2n2219 soa Transistor BC107 NPN GENERIC PNP SILICON TRANSISTOR 2n2222 2N2222 MPS2222 npn transistor
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN MPS650 MPS651 * PNP MPS750 MPS751 * Amplifier Transistors COLLECTOR 3 COLLECTOR 3 2 BASE 2 BASE NPN PNP Voltage and current are negative for PNP transistors 1 EMITTER 1 EMITTER *Motorola Preferred Devices MAXIMUM RATINGS
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MPS650
MPS651
MPS750
MPS751
MPS651
MPS751
2218A
MSC1621T1
MPS751 equivalent
MPS651 equivalent
2n2222 npn transistor footprint
BC237
pnp for 2n3019
pnp bc547 transistor
2n2219 soa
Transistor BC107 NPN
GENERIC PNP SILICON TRANSISTOR 2n2222
2N2222 MPS2222 npn transistor
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PDF
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mpsa63 replace
Abstract: BC237 MPSA63 equivalent J111
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Darlington Transistors MPSA62 MPSA63 MPSA64 * PNP Silicon COLLECTOR 3 MPSA55, MPSA56 BASE 2 For Specifications, See MPSA05, MPSA06 Data *Motorola Preferred Device EMITTER 1 MAXIMUM RATINGS Symbol MPSA62 MPSA63 MPSA64 Unit
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MPSA62
MPSA63
MPSA64
MPSA55,
MPSA56
MPSA05,
MPSA06
MPSA62
mpsa63 replace
BC237
MPSA63 equivalent
J111
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PDF
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SOT23 JEDEC standard orientation pad size
Abstract: sot-23 npn marking code VD BC237 p2f sot-23 transistor 2N5458
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA PNP Silicon Epitaxial Transistor PZT2907AT1 Motorola Preferred Device This PNP Silicon Epitaxial transistor is designed for use in linear and switching applications. The device is housed in the SOT-223 package which is
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OT-223
PZT2222AT1
PZT2907AT1
inch/1000
PZT2907AT3
inch/4000
uni218A
MSC1621T1
SOT23 JEDEC standard orientation pad size
sot-23 npn marking code VD
BC237
p2f sot-23
transistor 2N5458
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PDF
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BC237
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BAS40-04LT1 Preliminary Information Common Anode Schottky Barrier Diode Motorola Preferred Device These Schottky barrier diodes are designed for high speed switching applications, circuit protection, and voltage clamping. Extremely low forward voltage reduces
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BAS40-04LT1
236AB)
Diss218A
MSC1621T1
MSC2404
MSD1819A
MV1620
MV1624
MV1636
MV1640
BC237
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PDF
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TE 2549 MOTOROLA
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Switching Transistor MPS3638A PNP Silicon COLLECTOR 3 1 EMITTER MAXIMUM RATINGS Rating C o lle c to r-E m itte r Voltage Symbol Value Unit Vdc V dc VCEO -2 5 C o lle c to r-E m itte r Voltage VCES -2 5 C o lle c to r-B a s e Voltage
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OCR Scan
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MPS3638A
TE 2549 MOTOROLA
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PDF
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PS3638
Abstract: No abstract text available
Text: MOTOROLA Order this document by MPS3638A/D SEMICONDUCTOR TECHNICAL DATA S w itching Transistor M PS3638A PNP Silicon COLLECTOR 3 / EMITTER MAXIMUM RATINGS Rating Symbol Value Unit C o lle c to r-E m itte r V oltag e VCEO -2 5 V dc C o lle c to r-E m itte r V oltag e
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OCR Scan
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MPS3638A/D
PS3638A
O-226AA)
PS3638
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PDF
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MPS3638
Abstract: MPS-3638A MPS3638A
Text: MPS3638, A M A XIM U M RATINGS Symbol Rating Value U nit Collector-Emitter Voltage v CEO -2 5 Vdc Collector-Emitter Voltage VCES -2 5 Vdc Collector-Base Voltage v CBO -2 5 Vdc Emitter-Base Voltage v EBO - 4 .0 Vdc Collector Current — Continuous ic -5 0 0
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OCR Scan
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MPS3638,
O-226AA)
MPS3638
MPS3638A
MPS-3638A
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PDF
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MPS363B
Abstract: MPS3638 MPS3638A 2N4402 MPS-3638A
Text: M A XIM U M RATINGS Symbol Value U n it C o lle ctor-E m itter V oltage VCEO -2 5 Vdc C o lle ctor-E m itter V oltage VCES -2 5 Vdc Collector-Base V o ltage v CBO -2 5 Vdc Em itter-B ase V oltage v EBO Rating - 4 .0 Vdc m A dc C o lle cto r C u rrent — C ontinuous
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OCR Scan
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MPS3638,
O-226AA)
MPS3638
MPS3638A
MPS363B
2N4402
MPS-3638A
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PDF
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