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onsemi MPSA12 TRANS NPN DARL 20V TO92
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DigiKey	MPSA12	Bulk			20,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Rochester Electronics LLC MPSA12 TRANS NPN DARL 20V TO92
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DigiKey	MPSA12	Bulk			6,662	1 - 10 - 100 - 1000 - 10000 $0.05	Buy Now
onsemi MPSA12G TRANS NPN DARL 20V TO92
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DigiKey	MPSA12G	Bulk			20,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now
onsemi MPSA12RLRA TRANS NPN DARL 20V TO92
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	MPSA12RLRA	Reel			18,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now
onsemi MPSA12RLRP TRANS NPN DARL 20V TO92
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	MPSA12RLRP	Ammo Pack			18,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now

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MPSA12 Datasheets (49)

Part	Manufacturer	Description	Datasheet Type	PDF
MPSA12	Fairchild Semiconductor	NPN Darlington Transistor	Original	PDF
MPSA12	Fairchild Semiconductor	NPN Darlington Transistor	Original	PDF
MPSA12	Micro Commercial Components	TRANS DARLINGTON BJT NPN 20V 1.2A 3TO-92	Original	PDF
MPSA12	On Semiconductor	NPN Darlington Transistor	Original	PDF
MPSA12	Zetex Semiconductors	TRANS DARLINGTON NPN 100V 1A 3TO-92	Original	PDF
MPS-A12	Central Semiconductor	SMALL SIGNAL DARLINGTON TRANSISTORS (EPOXY)	Scan	PDF
MPSA12	Crimson Semiconductor	Transistor Selection Guide	Scan	PDF
MPSA12	Fairchild Semiconductor	Misc. Data Book Scans 1975/76	Scan	PDF
MPSA12	Fairchild Semiconductor	NPN Darlington Transistor	Scan	PDF
MPSA12	Fairchild Semiconductor	Full Line Condensed Catalogue 1977	Scan	PDF
MPSA12	Fairchild Semiconductor	NPN monolithic darlington amplifier.	Scan	PDF
MPSA12	Ferranti Semiconductors	Quick Reference Guide 1985	Scan	PDF
MPSA12	Ferranti Semiconductors	E-Line Transistors 1977	Scan	PDF
MPS-A12	Ferranti Semiconductors	NPN Silicon Darlington Transistors	Scan	PDF

MPSA12	General Electric	Semiconductor Data Handbook 1977	Scan	PDF
MPS-A12	General Electric	Semiconductor Data Handbook 1977	Scan	PDF
MPS-A12	General Electric	Planar passivated epitaxial NPN silicon Darlington transistor. 20V, 500mA.	Scan	PDF
MPSA12	Micro Electronics	Semiconductor Device Data Book	Scan	PDF
MPSA12	Micro Electronics	NPN SILICON DARLINGTON TRANSISTOR	Scan	PDF
MPSA12	Motorola	European Master Selection Guide 1986	Scan	PDF

MPSA12 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
Darlington transistor to 92 Abstract: No abstract text available Text: MCC TM Micro Commercial Components omponents 20736 Marilla Street Chatsworth !"# $ % !"# MPSA12 Features • This device is designed for applications requiring extremely high current gain at current to 1.0A	Original	PDF	MPSA12 Darlington transistor to 92
Untitled Abstract: No abstract text available Text: MCC omponents 20736 Marilla Street Chatsworth !"# $ % !"# MPSA12 Features • This device is designed for applications requiring extremely high current gain at current to 1.0A Pin Configuration Bottom View	Original	PDF	MPSA12 10mAdc, 300us,
Untitled Abstract: No abstract text available Text: Not Recommended for New Design Please Use FMMTA14 NPN SILICON PLANAR MEDIUM POWER DARLINGTON TRANSISTOR MPSA12 ISSUE 2 SEPT 93 FEATURES * 1 Watt power dissipation * 1 Amp continuous current * Minimum gain =8K at 250mA C B E E-Line TO92 Compatible ABSOLUTE MAXIMUM RATINGS.	Original	PDF	FMMTA14 250mA MPSA12 250mA, 100mA, 20MHz
MPSA12 Abstract: No abstract text available Text: MPSA12 MPSA12 NPN Darlington Transistor • This device is designed for applications requiring extremely high current gain at currents to 1.0A. • Sourced from process 05. • See MPSA14 for characteristics. TO-92 1 1. Emitter 2. Base 3. Collector Absolute Maximum Ratings * TA=25°C unless otherwise noted	Original	PDF	MPSA12 MPSA14 MPSA12
CTO-92 Abstract: No abstract text available Text: Not Recommended for New Design Please Use FMMTA14 NPN SILICON PLANAR MEDIUM POWER DARLINGTON TRANSISTOR MPSA12P ISSUE 2 – NOV 93 E B C TO92 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL Collector-Emitter Voltage V CES VALUE UNIT 20 V Emitter-Base Voltage V EBO	Original	PDF	FMMTA14 MPSA12P CTO-92
Untitled Abstract: No abstract text available Text: Small Signal Darlington Transistors Part No. 2N5306 2N5307 2N5308 MPSA12 MPSA13 MPSA14 2N6427 MPSA62 MPSA63 MPSA64 MPSA65 20070515 Polarity NPN PNP VCEO hFE @ VCE & IC IC V (A) 20 30 30 40 20 30 30 30 0.5 0.5 0.5 0.5 0.5 0.5 0.5 Min. Max. 7K 2K 7K 20K 20K	Original	PDF	2N5306 2N5307 2N5308 MPSA12 MPSA13 MPSA14 2N6427 MPSA62 MPSA63 MPSA64
NPN Transistor TO92 Abstract: npn darlington TO92 MPSA12P CTO-92 Text: NPN SILICON PLANAR MEDIUM POWER DARLINGTON TRANSISTOR MPSA12P ISSUE 2 – NOV 93 E B C TO92 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL Collector-Emitter Voltage V CES VALUE UNIT 20 V Emitter-Base Voltage V EBO 10 V Continuous Collector Current IC 500 mA Power Dissipation at T amb=25°C	Original	PDF	MPSA12P NPN Transistor TO92 npn darlington TO92 MPSA12P CTO-92
MPSA12 Abstract: equivalent mpsa14 MPSA14 Text: MPSA12 MPSA12 NPN Darlington Transistor • This device is designed for applications requiring extremely high current gain at currents to 1.0A. • Sourced from process 05. • See MPSA14 for characteristics. TO-92 1 1. Emitter 2. Base 3. Collector Absolute Maximum Ratings * TA=25°C unless otherwise noted	Original	PDF	MPSA12 MPSA14 MPSA12 equivalent mpsa14
Untitled Abstract: No abstract text available Text: MPSA12 Darlington Transistors NPN Silicon Features • Pb−Free Packages are Available* http://onsemi.com COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Value Unit Collector −Emitter Voltage VCES 20 Vdc Emitter Base Voltage VEBO 10 Vdc PD 625 5.0 mW mW/°C TJ, Tstg	Original	PDF	MPSA12 MPSA12/D
MPSA12 Abstract: MPSA14 Text: MPSA12 MPSA12 NPN Darlington Transistor • This device is designed for applications requiring extremely high current gain at currents to 1.0A. • Sourced from process 05. • See MPSA14 for characteristics. TO-92 1 1. Emitter 2. Base 3. Collector Absolute Maximum Ratings * TA=25°C unless otherwise noted	Original	PDF	MPSA12 MPSA14 MPSA12
mps a12 Abstract: mpsa12 Text: MPSA12 Darlington Transistors NPN Silicon MAXIMUM RATINGS Rating Symbol Value Unit Collector −Emitter Voltage VCES 20 Vdc Emitter Base Voltage VEBO 10 Vdc PD 625 5.0 mW mW/°C TJ, Tstg −55 to +150 °C Characteristic Symbol Max Unit Thermal Resistance, Junction−to−Ambient	Original	PDF	MPSA12 MPSA13/D mps a12
MPSA12 Abstract: MPSA12RLRA MPSA12RLRP MPSA12RLRPG mps a12 Marking code mps Text: MPSA12 Darlington Transistors NPN Silicon Features • Pb−Free Packages are Available* http://onsemi.com COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Value Unit Collector −Emitter Voltage VCES 20 Vdc Emitter Base Voltage VEBO 10 Vdc PD 625 5.0 mW mW/°C TJ, Tstg	Original	PDF	MPSA12 MPSA12/D MPSA12 MPSA12RLRA MPSA12RLRP MPSA12RLRPG mps a12 Marking code mps
2N4123 pnp silicon Abstract: 2N4401 520 GES5819 GES5820 GES5821 MPSA05 MPSA06 MPSA12 MPSA13 MPSA14 Text: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-92 PACKAGE b v ceo Device Type @ 10mA- V Min. Max. @ lc (mA) GES5819 GES5820 GES5821 MPSA05 MPSA06 MPSA12 MPSA13 MPSA14 PNP NPN PNP NPN NPN NPN NPN NPN 40 60 60 60 80 20 30 30 150 60 60 50	OCR Scan	PDF	GES5819 GES5820 GES5821 MPSA05 MPSA06 MPSA12 MPSA13 MPSA14 MPSA20 2N4123 pnp silicon 2N4401 520
b20100 Abstract: MPSA12 Text: S E M IC O N D U C T O R MPSA12 NPN Darlington Transistor This device is designed for applications requiring extrem ely high current gain at currents to 1.0 A. Sourced from Process 05. See M PSA14 for characteristics. AbSOlUtG Maximum RâtinÇjS Symbol	OCR Scan	PDF	MPSA12 PSA14 b20100 MPSA12

MPSA13 Abstract: MPSA12 MPSA14 mpsa13 central Text: Datasheet J • TM P a h 1 W C EITFO 1 Semiconductor Corp. MPSA12 MPSA13 MPSA14 NPN SILICON DARLINGTON TRANSISTOR JEDEC T0-92 CASE EBC 145 Adams Avenue, Hauppauge, NY 11788 USA Tel: (631) 435-1110 • Fax: (631) 435-1824 Manufacturers of World Class Discrete Semiconductors	OCR Scan	PDF	MPSA12 MPSA13 MPSA14 T0-92 MPSA12 MPSA14 MPSA13 mpsa13 central
FPQ3725 Abstract: 2n999 FPQ3724 FPQ-3724 Text: TRANSISTORS— MULTIPLE TRANSISTORS NPN DARLINGTON AMPLIFIER TRANSISTORS NUMERIC LISTING METAL AND PLASTIC PACKAGE V CEO VOLTS TYPE MHz ^ob pF MIN MAX h FE hFE MIN - MAX MIN @ •c mA PD V 2 5 "c mW Package 310 TO-92 MPSA12 20 20000 @ 10 MPSA13 30 5000 @	OCR Scan	PDF	MPSA12 MPSA13 MPSA14 2N997 2N998 2N999 2N2723 2N2724 2N2725 FPQ3724 FPQ3725 FPQ3724 FPQ-3724
mpsa65 Abstract: GES5819 GES5820 GES5821 MPSA05 MPSA06 MPSA12 MPSA13 MPSA14 MPSA20 Text: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-92 P AC KAG E VCE sat 1F E b v ceo Device Type @ 10mA-(V) Min. Max. @ lc (mA) GES5819 GES5820 GES5821 MPSA05 MPSA06 MPSA12 MPSA13 MPSA14 PNP NPN PNP NPN NPN NPN NPN NPN 40 60 60 60 80 20 30	OCR Scan	PDF	GES5819 GES5820 GES5821 MPSA05 MPSA06 MPSA12 MPSA13 MPSA14 MPSA20 mpsa65 MPSA20
n3904 Abstract: GES5819 GES5820 GES5821 MPSA05 MPSA06 MPSA12 MPSA13 MPSA14 MPSA20 Text: SILICON SIGNAL TRANSISTORS G EN ERAL PURPOSE A M PLIFIERS TO-92 PACKAGE Device bvceo Type @ 10mA- V Min. Max. @ lc (mA) G ES5819 GES5820 GES5821 MPSA05 MPSA06 MPSA12 MPSA13 MPSA14 PNP NPN PNP NPN NPN NPN NPN NPN 40 60 60 60 80 20 30 30 150 60 60 50	OCR Scan	PDF	GES5819 GES5820 GES5821 MPSA05 MPSA06 MPSA12 MPSA13 MPSA14 MPSA20n) -300mA, n3904 MPSA20
GES5819 Abstract: GES5820 GES5821 MPSA05 MPSA06 MPSA12 MPSA13 MPSA14 MPSA20 MPSA55 Text: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-92 PACKAGE Device bv ceo Type @ 10mA- V Min. VCE(sat) 1F E Max. @ lc (mA) GES5819 GES5820 GES5821 MPSA05 MPSA06 MPSA12 MPSA13 MPSA14 PNP NPN PNP NPN NPN NPN NPN NPN 40 60 60 60 80 20 30 30	OCR Scan	PDF	GES5819 GES5820 GES5821 MPSA05 MPSA06 MPSA12 MPSA13 MPSA14 MPSA20S6535 100mA) MPSA20 MPSA55
GES5819 Abstract: GES5820 GES5821 MPSA05 MPSA06 MPSA12 MPSA13 MPSA14 MPSA20 MPSA55 Text: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-92 PACKAGE b v ceo Device Type @ 10mA- V Min. Max. @ lc (mA) G ES5819 GES5820 GES5821 MPSA05 MPSA06 MPSA12 MPSA13 MPSA14 PNP NPN PNP NPN NPN NPN NPN NPN 40 60 60 60 80 20 30 30 150 60 60 50	OCR Scan	PDF	GES5819 GES5820 GES5821 MPSA05 MPSA06 MPSA12 MPSA13 MPSA14 MPSA20 MPS6534 MPSA20 MPSA55
Untitled Abstract: No abstract text available Text: NPN SILICON PLANAR MEDIUM POWER DARLINGTON TRANSISTOR MPSA12 ISSUE 2 - SEPT 93_ FEATU RES * 1 Watt power dissipation * 1 Am p continuous current * Minimum gain =8K at 250mA ABSOLUTE MAXIMUM RATINGS. PARAMETER SYM BOL VALUE UNIT	OCR Scan	PDF	250mA MPSA12 250mA, 100mA, 20MHz 300us.
Untitled Abstract: No abstract text available Text: Discrete POWER & Signal Technologies F = A l R O H I L .D SEM ICONDUCTOR MPSA12 NPN Darlington Transistor This device is designed for applications requiring extremely high current gain at currents to 1.0 A. Sourced from Process 05. See MPSA14 for characteristics.	OCR Scan	PDF	MPSA12 MPSA14
MPS6531 Abstract: GES5819 GES5820 GES5821 MPSA05 MPSA06 MPSA12 MPSA13 MPSA14 MPSA20 Text: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-92 PACKAGE Type @ 10mA- V Min. Max. @ lc (mA) GES5819 GES5820 GES5821 MPSA05 MPSA06 MPSA12 MPSA13 MPSA14 PNP NPN PNP NPN NPN NPN NPN NPN 40 60 60 60 80 20 30 30 150 60 60 50 50 20,000 10,000	OCR Scan	PDF	GES5819 GES5820 GES5821 MPSA05 MPSA06 MPSA12 MPSA13 MPSA14 MPSA206531, MPS6532 MPS6531 MPSA20
MP5A12 Abstract: MPSA12 Text: S; t r .; • v"; '" ÿ-!:"; Ü ' v " i'” S' -vá-'.'." MPSA12 » ~ í ,.* f , . 4 i f i 0j% lE C NPN S IL IC O N V The M PSA12 i s d e s ig n e d r e q u ir in g fo r NPN s i l i c o n p r e a m p lif ie r in p u t im p e d a n ce l i d a r lin g t o n	OCR Scan	PDF	MPSA12 MP5A12 500mA Boxi9477,

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MPSA12 Price and Stock

onsemi MPSA12

Rochester Electronics LLC MPSA12

onsemi MPSA12G

onsemi MPSA12RLRA

onsemi MPSA12RLRP

MPSA12 Datasheets (49)

MPSA12 Datasheets Context Search

Darlington transistor to 92

Untitled

Untitled

MPSA12

CTO-92

Untitled

NPN Transistor TO92

MPSA12

Untitled

MPSA12

mps a12

MPSA12

2N4123 pnp silicon

b20100

MPSA13

FPQ3725

mpsa65

n3904

GES5819

GES5819

Untitled

Untitled

MPS6531

MP5A12