mpsa16
Abstract: MPS-A16 MPSA17
Text: MOTOROLA Order this document by MPSA17/D SEMICONDUCTOR TECHNICAL DATA Chopper Transistor MPSA17 NPN Silicon Motorola Preferred Device COLLECTOR 3 2 BASE 1 EMITTER MAXIMUM RATINGS 1 Rating Symbol Value Unit Collector – Emitter Voltage VCEO 40 Vdc Emitter – Base Voltage
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MPSA17/D
MPSA17
226AA)
mpsa16
MPS-A16
MPSA17
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MRF472
Abstract: MRF245 MRF243 MPSA13K MPS6579 MRF420 BF497 MRF304 MRF250 PE210B
Text: RF LOW-POWER SILICON NPN Item Number Part Number V BR CEO BSW43 BSW43 BSW43 BSX52 MMBT4124 MMBT4124 MMBT4124 KT379B ZTX114 2SC137 -5 10 ~~~~ 2SD1581M 2SD1581L JE9143A 2SD1581K JE9143B JE9143 JE9143C 2N5188 -15 20 ~~~~~D BSY58 BF374 BF375C 2SC1293 2SC1293 2SC1293
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BSW43
BSX52
MMBT41ran
MRF472
MRF245
MRF243
MPSA13K
MPS6579
MRF420
BF497
MRF304
MRF250
PE210B
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mpsa16
Abstract: motorola transistor 2N2907 BC237 motorola transistor dpak marking 350
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Chopper Transistor MPSA17 NPN Silicon Motorola Preferred Device COLLECTOR 3 2 BASE 1 EMITTER MAXIMUM RATINGS 1 Rating Symbol Value Unit Collector – Emitter Voltage VCEO 40 Vdc Emitter – Base Voltage VEBO 15 Vdc Collector Current – Continuous
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MPSA17
226AA)
E218A
MSC1621T1
MSC2404
MSD1819A
MV1620
MV1624
MV1636
MV1640
mpsa16
motorola transistor 2N2907
BC237
motorola transistor dpak marking 350
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BC237
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA JFET Chopper MMBFJ175LT1 P–Channel — Depletion Motorola Preferred Device 2 SOURCE 3 GATE 3 1 DRAIN 1 2 MAXIMUM RATINGS Rating Drain – Gate Voltage Reverse Gate – Source Voltage Symbol Value Unit VDG 25 V VGS r
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MMBFJ175LT1
236AB)
Ga218A
MSC1621T1
MSC2404
MSD1819A
MV1620
MV1624
MV1636
BC237
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BC237
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA JFET Chopper P–Channel — Depletion 2 SOURCE MMBFJ177LT1 3 GATE 1 DRAIN 3 1 MAXIMUM RATINGS Rating Drain–Gate Voltage Reverse Gate–Source Voltage Symbol Value Unit VDG 25 Vdc VGS r – 25 Vdc 2 CASE 318 – 08, STYLE 10
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MMBFJ177LT1
236AB)
MSC1621T1
MSC2404
MSD1819A
MV1620
MV1624
MV1636
MV1640
BC237
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BC237
Abstract: MPSA06 346
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MMBD1000LT1 MMBD2000T1 MMBD3000T1 MMSD1000T1 Switching Diode Part of the GreenLine Portfolio of devices with energy–conserving traits. This switching diode has the following features: • Very Low Leakage ≤ 500 pA promotes extended battery life by decreasing energy waste
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MMBD1000LT1
MMBD2000T1
MMBD3000T1
MMSD1000T1
MMBD1000LT1
OT-23
O-236AB)
V218A
MSC1621T1
MSC2404
BC237
MPSA06 346
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BC237
Abstract: MARKING CODE diode sod123 W1 K 2056 transistor
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MGSF3455XT1 Preliminary Information Motorola Preferred Device Low rDS on Small-Signal MOSFETs TMOS Single P-Channel Field Effect Transistors Part of the GreenLine Portfolio of devices with energy– conserving traits.
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MGSF3455XT1
T218A
MSC1621T1
MSC2404
MSD1819A
MV1620
MV1624
MV1636
MV1640
MV1642
BC237
MARKING CODE diode sod123 W1
K 2056 transistor
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2N16
Abstract: BC237 BCY72
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MGSF1P02ELT1 Preliminary Information Motorola Preferred Device Low rDS on Small-Signal MOSFETs TMOS Single P-Channel Field Effect Transistors Part of the GreenLine Portfolio of devices with energy– conserving traits.
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MGSF1P02ELT1
L218A
MSC1621T1
MSC2404
MSD1819A
MV1620
MV1624
MV1636
MV1640
MV1642
2N16
BC237
BCY72
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2n2222 h 331 transistors
Abstract: 2n2222 -331 transistors 2n2222 331 transistors BC237 2n2222 h 331 MARKING CODE diode sod123 W1
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MGSF3442XT1 Preliminary Information Motorola Preferred Device Low rDS on Small-Signal MOSFETs TMOS Single N-Channel Field Effect Transistors Part of the GreenLine Portfolio of devices with energy– conserving traits.
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MGSF3442XT1
T218A
MSC1621T1
MSC2404
MSD1819A
MV1620
MV1624
MV1636
MV1640
MV1642
2n2222 h 331 transistors
2n2222 -331 transistors
2n2222 331 transistors
BC237
2n2222 h 331
MARKING CODE diode sod123 W1
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2N643
Abstract: BC237 MARKING DP SOT-363 DO204AA
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MMBD1010LT1 MMBD2010T1 MMBD3010T1 Switching Diode Part of the GreenLine Portfolio of devices with energy–conserving traits. This switching diode has the following features: • Very Low Leakage ≤ 500 pA promotes extended battery life by decreasing energy waste. Guaranteed leakage limit is for each diode in the pair
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MMBD1010LT1
MMBD2010T1
MMBD3010T1
MMBD1010LT1
S218A
MSC1621T1
MSC2404
MSD1819A
MV1620
MV1624
2N643
BC237
MARKING DP SOT-363
DO204AA
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BC237
Abstract: MMBD2005T1
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MMBD1005LT1 MMBD2005T1 MMBD3005T1 Switching Diode Part of the GreenLine Portfolio of devices with energy–conserving traits. This switching diode has the following features: • Very Low Leakage ≤ 500 pA promotes extended battery life by decreasing energy waste. Guaranteed leakage limit is for each diode in the pair
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MMBD1005LT1
MMBD2005T1
MMBD3005T1
MMBD1005LT1
MSC1621T1
MSC2404
MSD1819A
MV1620
MV1624
MV1636
BC237
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BC237
Abstract: MARKING CODE diode sod123 W1
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MGSF3441XT1 Preliminary Information Motorola Preferred Device Low rDS on Small-Signal MOSFETs TMOS Single P-Channel Field Effect Transistors Part of the GreenLine Portfolio of devices with energy– conserving traits.
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MGSF3441XT1
T218A
MSC1621T1
MSC2404
MSD1819A
MV1620
MV1624
MV1636
MV1640
MV1642
BC237
MARKING CODE diode sod123 W1
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MMBF4856
Abstract: transistor equivalent 2n5551 BF245 application note MSC2404 MSC1621 74LS04 Fan Out 2n3819 equivalent transistor MMBF5486L bf245 equivalent MPS8093
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Advance Information MDC3105LT1 Motorola Preferred Device Integrated Relay/Solenoid Driver • Optimized to Switch 3 V to 5 V Relays from a 5 V Rail • Compatible with “TX’’ and “TQ’’ Series Telecom Relays Rated up to
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Automat218A
MSC1621T1
MSC2404
MSD1819A
MV1620
MV1624
MV1636
MV1640
MV1642
MV1644
MMBF4856
transistor equivalent 2n5551
BF245 application note
MSC1621
74LS04 Fan Out
2n3819 equivalent transistor
MMBF5486L
bf245 equivalent
MPS8093
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2n3819 replacement
Abstract: 2n3053 replacement BC109C replacement mps2907 replacement bf245 replacement BC237 BF245 bf258 replacement J112 equivalent 2N4265
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Silicon Tuning Diode MMBV809LT1 This device is designed for 900 MHz frequency control and tuning applications. It provides solid–state reliability in replacement of mechanical tuning methods. Motorola Preferred Device
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MMBV809LT1
236AB)
MSC1621T1
MSC2404
MSD1819A
MV1620
MV1624
MV1636
MV1640
MV1642
2n3819 replacement
2n3053 replacement
BC109C replacement
mps2907 replacement
bf245 replacement
BC237
BF245
bf258 replacement
J112 equivalent
2N4265
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BC237
Abstract: Fet BF245
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA TMOS FET Transistor N–Channel — Enhancement VN0300L 3 DRAIN Motorola Preferred Device 2 GATE 1 SOURCE MAXIMUM RATINGS Rating Symbol Value Unit Drain – Source Voltage VDSS 60 V Drain – Gate Voltage VDGR 60 V
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VN0300L
226AA)
MSC1621T1
MSC2404
MSD1819A
MV1620
MV1624
MV1636
MV1640
MV1642
BC237
Fet BF245
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MPS751 equivalent
Abstract: MPS651 equivalent 2n2222 npn transistor footprint BC237 pnp for 2n3019 pnp bc547 transistor 2n2219 soa Transistor BC107 NPN GENERIC PNP SILICON TRANSISTOR 2n2222 2N2222 MPS2222 npn transistor
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN MPS650 MPS651 * PNP MPS750 MPS751 * Amplifier Transistors COLLECTOR 3 COLLECTOR 3 2 BASE 2 BASE NPN PNP Voltage and current are negative for PNP transistors 1 EMITTER 1 EMITTER *Motorola Preferred Devices MAXIMUM RATINGS
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MPS650
MPS651
MPS750
MPS751
MPS651
MPS751
2218A
MSC1621T1
MPS751 equivalent
MPS651 equivalent
2n2222 npn transistor footprint
BC237
pnp for 2n3019
pnp bc547 transistor
2n2219 soa
Transistor BC107 NPN
GENERIC PNP SILICON TRANSISTOR 2n2222
2N2222 MPS2222 npn transistor
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mpsa63 replace
Abstract: BC237 MPSA63 equivalent J111
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Darlington Transistors MPSA62 MPSA63 MPSA64 * PNP Silicon COLLECTOR 3 MPSA55, MPSA56 BASE 2 For Specifications, See MPSA05, MPSA06 Data *Motorola Preferred Device EMITTER 1 MAXIMUM RATINGS Symbol MPSA62 MPSA63 MPSA64 Unit
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MPSA62
MPSA63
MPSA64
MPSA55,
MPSA56
MPSA05,
MPSA06
MPSA62
mpsa63 replace
BC237
MPSA63 equivalent
J111
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SOT23 JEDEC standard orientation pad size
Abstract: sot-23 npn marking code VD BC237 p2f sot-23 transistor 2N5458
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA PNP Silicon Epitaxial Transistor PZT2907AT1 Motorola Preferred Device This PNP Silicon Epitaxial transistor is designed for use in linear and switching applications. The device is housed in the SOT-223 package which is
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OT-223
PZT2222AT1
PZT2907AT1
inch/1000
PZT2907AT3
inch/4000
uni218A
MSC1621T1
SOT23 JEDEC standard orientation pad size
sot-23 npn marking code VD
BC237
p2f sot-23
transistor 2N5458
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BC237
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BAS40-04LT1 Preliminary Information Common Anode Schottky Barrier Diode Motorola Preferred Device These Schottky barrier diodes are designed for high speed switching applications, circuit protection, and voltage clamping. Extremely low forward voltage reduces
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BAS40-04LT1
236AB)
Diss218A
MSC1621T1
MSC2404
MSD1819A
MV1620
MV1624
MV1636
MV1640
BC237
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Untitled
Abstract: No abstract text available
Text: MPSA16 MPSA17* M A X IM U M R ATINGS Symbol MPS-A16MPS-A17 Unit Collector-Emitter Voltage Rating v CEO 40 Vdc Emitter-Base Voltage v EBO 12 15 Collector Current — Continuous 'C 100 mAdc Total Device Dissipation a Ty\ = 25°C Derate above 25°C PD 350 2.8
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MPSA16
MPSA17*
MPS-A16MPS-A17
O-226AA)
PSA16
MPSA17
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mpsa16 motorola
Abstract: No abstract text available
Text: MPSA16 MPSA17* M A X IM U M RATINGS Symbol MPS-A16MPS-A17 Unit Collector-Emitter Voltage VCEO 40 Vdc Emitter-Base Voltage V ebo Rating 12 15 Collector Current — Continuous >C 100 mAdc Total Device Dissipation a Ta = 25°C Derate above 25CC Pd 350 2.8 mW
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MPS-A16MPS-A17
MPSA16
MPSA17*
T0-226AA)
MPS-A16
MPS-A17
MPSA16,
MPSA17
mpsa16 motorola
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Untitled
Abstract: No abstract text available
Text: MPSA16 MPSA17* M A XIM U M RATINGS Rating Sym bol M P S -A 1 6 M P S-A 1 7 Unit Collector-Emitter Voltage v CEO 40 Vdc Emitter-Base Voltage v EBO Collector Current — Continuous 12 15 [C 100 mAdc Total Device Dissipation @ T ^ = 250C Derate above 25°C PD
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MPSA16
MPSA17*
O-226AA)
MPSA17
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2N5271
Abstract: SILICON SMALL-SIGNAL DICE DEL406 SILICON DICE motorola 2N2330
Text: "MOTOROLA SC -CDIODES/OPTO} 6367255 MOTOROLA SC “ “ 3Ü D T I b3b755S <DIODES/OPTO> 34C 0030010 38010 S D SILICON SMALL-SIGNAL TRANSISTOR DICE continued MPSAC17 DIE NO. — NPN LINE SOURCE — DEL406 4Ek iP This die provides performance similar to that of the following device types:
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b3b755S
DEL406
2N2330
2N2331
2N5271
MPSA16
MPSA17
MPSAC17
SILICON SMALL-SIGNAL DICE
DEL406
SILICON DICE motorola
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motorola transistor 263-1
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Chopper Transistor NPN Silicon MPSA17 M oto ro la P referred Device COLLECTOR 3 1 EMITTER M AXIMUM RATINGS Rating Symbol Value Unit Collector-Emitter Voltage VCEO 40 Vdc Emitter-Base Voltage vebo 15 Vdc Collector Current - Continuous
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MPSA17
motorola transistor 263-1
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