MRF0211L Search Results

MRF0211L Datasheets (3)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
MRF0211L		Motorola	SILICON HIGH-FREQUENCY		Scan	PDF
MRF0211LT1		On Semiconductor	TRANS GP BJT NPN 15V 0.07A 4SOT-143 T/R		Original	PDF
MRF0211LT1G		On Semiconductor	TRANS GP BJT NPN 15V 0.07A 4SOT-143 T/R		Original	PDF

MRF0211L Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
HP11608A Abstract: MRF0211LT1 MRF5711LT1 S212 Text: MOTOROLA Order this document by MRF0211LT1/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon High-Frequency Transistor MRF0211LT1 . . . designed primarily for use in the high–gain, low–noise small–signal amplifiers for operation up to 3.5 GHz. Also usable in applications requiring fast	Original	PDF	MRF0211LT1/D MRF0211LT1 MRF5711LT1 MRF0211LT1/D* HP11608A MRF0211LT1 MRF5711LT1 S212
MHW707-2 Abstract: MHW707-1 MRF947T1 equivalent mhw704 CR2428 MHW591 MHW592 MHW593 MHW707 MRF861 Text: RF Products In Brief . . . While Motorola is considered to be the supermarket for semiconductor products, there is not a category in which the selection is more diverse, or more complete, than in products designed for RF system applications. From MOS, bipolar	Original	PDF	714U/1 MHLW8000 MHW707-2 MHW707-1 MRF947T1 equivalent mhw704 CR2428 MHW591 MHW592 MHW593 MHW707 MRF861
MLED96 Abstract: BRX49 SCR MRF549 ATV5030 MRF660 MRF548 mmbr2857lt1 CR2428 MPF3822 MRF548 MOTOROLA Text: ALPHANUMERIC INDEX DEVICE ATV5030 ATV5090B ATV6031 ATV6060H ATV7050 BAL99LT1 BAS16LT1 BAS21LT1 BAV70LT1 BAV74LT1 BAV99LT1 BAW56LT1 BC107,A,B BC109C BC177B BC182 BC212 BC237B BC239 BC307B BC327 BC328 BC337 BC338 BC368 BC369 BC373 BC489 BC490 BC517 BC546,A,B	Original	PDF	ATV5030 ATV5090B ATV6031 ATV6060H ATV7050 BAL99LT1 BAS16LT1 BAS21LT1 BAV70LT1 BAV74LT1 MLED96 BRX49 SCR MRF549 ATV5030 MRF660 MRF548 mmbr2857lt1 CR2428 MPF3822 MRF548 MOTOROLA
XM0830SJ Abstract: smd code marking 162 sot23-5 MARKING V14 SOT23-5 RF Transistor Selection smd code marking rf ft sot23 smd code marking NEC rf transistor sot-363 inf smd marking D3 SOT363 XM0860SH MGA51563 Text: Selection Guide RF & Protection Devices [ www.infineon.com/rfandprotectiondevices ] 2 Contents Selection Guide 4 RF Bipolar Transistors & Active Bias Controller 4 RF Switches 6 RF MMICs 7 RF Diodes 8 RF MOSFET 16 RF Schottky Diodes 18 ESD and EMI Protection Devices and Filters	Original	PDF	24GHz BF517 BF770A BF771 BF775 BF799 BF799W BFP181 BFP181R BFP182 XM0830SJ smd code marking 162 sot23-5 MARKING V14 SOT23-5 RF Transistor Selection smd code marking rf ft sot23 smd code marking NEC rf transistor sot-363 inf smd marking D3 SOT363 XM0860SH MGA51563
2sc3052ef Abstract: 2n2222a SOT23 TRANSISTOR SMD MARKING CODE s2a 1N4148 SMD LL-34 TRANSISTOR SMD CODE PACKAGE SOT23 2n2222 sot23 TRANSISTOR S1A 64 smd 1N4148 SOD323 semiconductor cross reference toshiba smd marking code transistor Text: Small Signal Discretes Selection Guide [ www.infineon.com/smallsignaldiscretes ] 2 Contents Selection Guide 4 RF Bipolar Transistors & Active Bias Controller 4 RF Switches 6 RF MMICs 7 RF Diodes 8 RF MOSFET 16 Schottky Diodes 18 ESD and EMI Protection Devices and Filters	Original	PDF	24GHz BF517 B132-H8248-G5-X-7600 2sc3052ef 2n2222a SOT23 TRANSISTOR SMD MARKING CODE s2a 1N4148 SMD LL-34 TRANSISTOR SMD CODE PACKAGE SOT23 2n2222 sot23 TRANSISTOR S1A 64 smd 1N4148 SOD323 semiconductor cross reference toshiba smd marking code transistor
MRF0211 Abstract: MRF0211L MRF5711 S212 Text: Order this document by MRF0211/D_ MOTOROLA SEM ICO N DU CTO R TECHNICAL DATA MRF0211 MRF0211L The RF Line N P N S ilic o n H igh-Frequency T ran sisto r SURFACE MOUNT HIGH FREQUENCY TRANSISTOR NPN SILICON . . . designed primarily for use in the high-gain, low-noise small-signal amplifiers	OCR Scan	PDF	MRF0211/P_ OT-143 MRF5711 MRF0211/D MRF0211 MRF0211L MRF5711 S212
Motorola 90 31 te 2482 Abstract: Motorola TE 2482 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MRF0211L The RF Line NPN S ilic o n H igh-Frequency T ra n sisto r SURFACE MOUNT HIGH FREQUENCY TRANSISTOR NPN SILICON . - designed p rim a rily fo r use in the hig h -g ain , low -n oise sm a ll-sign a l a m p lifie rs	OCR Scan	PDF	MRF0211L OT-143 MRF5711 Motorola 90 31 te 2482 Motorola TE 2482
16 SOT-143 MOTOROLA Abstract: No abstract text available Text: SOT-143 Devices Maximum die size 25 mil x 25 mil CASE318A-05 RF Transistors Maximum Ratings Galn-Bandwidth NF @ <§ Device MRFS211LT1 <17> MRF9331LT1 MRF9011LT1 MRF9411LT1 MRF9411BLT1 MRF9511LT1 MRF0211LT1 MRF5711LT1 f Gain @ f Marking h Typ GHz •c mA Typ	OCR Scan	PDF	OT-143 CASE318A-05 MRFS211LT1 MRF9331LT1 MRF9011LT1 MRF9411LT1 MRF9411BLT1 MRF9511LT1 MRF0211LT1 MRF5711LT1 16 SOT-143 MOTOROLA
Motorola transistors MRF 947 Abstract: trimpots 3296 transistor C5386 1n4740 2N5591 Motorola 2N5688 CQ 542 Transistor npn motorola equivalent transistor of 2sc3358 HB215/D ic cd 2399 gp Text: Selector Guide 1 Discrete Transistor Data Sheets Amplifier Data Sheets Monolithic Integrated Circuit H Data Sheets mm Case Dimensions Cross Reference and Sales Offices 6 M MOTOROLA RF Device Data This publication presents technical information for the several product families that	OCR Scan	PDF	2PHX11136Q-17 Motorola transistors MRF 947 trimpots 3296 transistor C5386 1n4740 2N5591 Motorola 2N5688 CQ 542 Transistor npn motorola equivalent transistor of 2sc3358 HB215/D ic cd 2399 gp
2N4427 equivalent bfr91 Abstract: bfr90 equivalent 2N5503 MRA1600-30 TPV-595A 2N3553 equivalent MRF477 equivalent MRA0500-19L 2N6084 equivalent MOTOROLA TRANSISTOR MRF239 Text: RF Power TMOS FETs Motorola RF Power MOSFETs, trademark TMOS , are constructed using a planar process to enhance manufacturing repeatability. They are N-channet field effect transistors with an oxide insulated gate which controls vertical current flow. Compared with bipolar transistors, RF Power FETs exhibit higher gain, higher input impedance, enhanced therm al stability	OCR Scan	PDF	PoweS3666 MRF3866 2N2857 2N3866 2N5943 MRF904 MRF571 2N4958 2N3160 2N5583 2N4427 equivalent bfr91 bfr90 equivalent 2N5503 MRA1600-30 TPV-595A 2N3553 equivalent MRF477 equivalent MRA0500-19L 2N6084 equivalent MOTOROLA TRANSISTOR MRF239
Untitled Abstract: No abstract text available Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon High-Frequency Transistor . . . d e s ig n e d p rim a rily fo r use in the h ig h -g a in , io w -n o is e s m a ll-s ig n a l am plifiers for operation up to 3.5 GHz. Also usable in applications requiring fast	OCR Scan	PDF	MRF5711LT1 MRF0211LT1
MHW721A2 Abstract: 13001 S 6D TRANSISTOR atv5030* motorola 2N5591 MOTOROLA 13001 6D TRANSISTOR BGY41 MHW710-1 construction linear amplifier 2sc1945 7119 amperex bf503 Text: Volume I Selector Guide 1 Discrete Transistor Data Sheets 2 Case Dimensions 3 Volume II Selector Guide Amplifier Data Sheets 5 Tuning, Hot Carrier and PIN Diode Data Sheets 6 Technical Information Case Dimensions 8 Cross Reference and Sales Offices 9 MOTOROLA RF DEVICE DATA	OCR Scan	PDF	1PHX11136Q-14 MHW721A2 13001 S 6D TRANSISTOR atv5030* motorola 2N5591 MOTOROLA 13001 6D TRANSISTOR BGY41 MHW710-1 construction linear amplifier 2sc1945 7119 amperex bf503
A5 GNE mosfet Abstract: jo3501 2N4427 equivalent bfr91 2N503 2N5160 MOTOROLA BF431 BFR96 HY 1906 transistor jo2015 kd 2060 transistor Text: Volume I Selector Guide 1 Discrete Transistor Data Sheets 2 Case Dimensions 3 Volume II Selector Guide ^ Amplifier Data Sheets Tuning, Hot Carrier and PIN Diode Data Sheets 6 Technical Information Case Dimensions Cross Reference and Sales Offices 8 9 MOTOROLA	OCR Scan	PDF	1PHX11136Q-14 A5 GNE mosfet jo3501 2N4427 equivalent bfr91 2N503 2N5160 MOTOROLA BF431 BFR96 HY 1906 transistor jo2015 kd 2060 transistor
22Z-P Abstract: No abstract text available Text: MOTOROLA • SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon High-Frequency IVansistor . . . designed primarily for use in the high-gain, low-noise small-signal amplifiers for operation up to 3.5 GHz. Also usable in applications requiring fast switching	OCR Scan	PDF	OT-143 MRF5711LT1 Rating60 MRF0211LT1 22Z-P