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    MRF1015 Search Results

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    NXP Semiconductors MMRF1015NR1

    RF MOSFET LDMOS 28V TO270-2
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    DigiKey MMRF1015NR1 Digi-Reel 355 1
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    MMRF1015NR1 Cut Tape 355 1
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    Rochester Electronics MMRF1015NR1 466 1
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    Flip Electronics MMRF1015NR1 8,500
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    MACOM MRF10150

    TRANS NPN 150W 1025MHZ-1050MHZ
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    DigiKey MRF10150 Tray 20
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    Richardson RFPD MRF10150 1
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    NXP Semiconductors MMRF1015GNR1

    RF MOSFET LDMOS 28V TO270-2
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    Rochester Electronics MMRF1015GNR1 960 1
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    NXP Semiconductors MMRF1015N

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    MRF1015 Datasheets (13)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    MRF10150 M/A-COM RF Transistors (BJT), Discrete Semiconductor Products, TRANS NPN 150W 1025MHZ-1050MHZ Original PDF
    MRF10150 M/A-COM TRANS GP BJT NPN 65V 14A 3CASE 376B-02 Original PDF
    MRF10150 Motorola MRF10150 RF Power Transistor Original PDF
    MRF10150 Motorola Microwave Pulse Power Transistors Original PDF
    MRF1015MA Motorola MICROWAVE POWER TRANSISTORS Original PDF
    MRF1015MA Motorola European Master Selection Guide 1986 Scan PDF
    MRF1015MA Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    MRF1015MA Unknown Semiconductor Master Cross Reference Guide Scan PDF
    MRF1015MB Freescale Semiconductor 15 W (PEAK), 960-1215 MHz, MICROWAVE POWER TRANSISTORS NPN SILICON Original PDF
    MRF1015MB Motorola MICROWAVE POWER TRANSISTORS Original PDF
    MRF1015MB Unknown Semiconductor Master Cross Reference Guide Scan PDF
    MRF1015MC Unknown Semiconductor Master Cross Reference Guide Scan PDF
    MRF1015Mx Motorola MICROWAVE POWER TRANSISTORS Original PDF

    MRF1015 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: MRF1015MC Transistors Bipolar NPN UHF/Microwave Transisitor Military/High-RelN V BR CEO (V)60â V(BR)CBO (V)60 I(C) Max. (A)1.0 Absolute Max. Power Diss. (W)17.5 Minimum Operating Temp (øC)-65 Maximum Operating Temp (øC)150þ I(CBO) Max. (A)1.0m @V(CBO) (V) (Test Condition)50


    Original     		MRF1015MC PDF

    J15-12

    Abstract: MRF1015MA MRF1015MB
    Text: MOTOROLA Order this document by MRF1015MA/D SEMICONDUCTOR TECHNICAL DATA The RF Line Microwave Pulse Power Transistors MRF1015MA MRF1015MB . . . designed for Class B and C common base amplifier applications in short and long pulse TACAN, IFF, DME, and radar transmitters.


    Original     		MRF1015MA/D MRF1015MA MRF1015MB MRF1015MA MRF1015MA/D* J15-12 MRF1015MB PDF

    Rf amplifier with frequency 1150 MHZ 20 db gain

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line Microwave Pulse Power Transistor MRF10150 . . . designed for 1025 – 1150 MHz pulse common base amplifier applications such as TCAS, TACAN and Mode–S transmitters. • Guaranteed Performance @ 1090 MHz Output Power = 150 Watts Peak


    Original     		MRF10500 MRF10150 MRF10150 Rf amplifier with frequency 1150 MHZ 20 db gain PDF

    Untitled

    Abstract: No abstract text available
    Text: MRF1015MB Transistors Bipolar NPN UHF/Microwave Transisitor Military/High-RelN V BR CEO (V)60â V(BR)CBO (V)60 I(C) Max. (A)1.0 Absolute Max. Power Diss. (W)17.5 Minimum Operating Temp (øC)-65 Maximum Operating Temp (øC)150þ I(CBO) Max. (A)1.0m @V(CBO) (V) (Test Condition)50


    Original     		MRF1015MB PDF

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA MRF1015MB Microwave Pulse Power Transistors Designed for Class B and C common base amplifier applications in short and long pulse TACAN, IFF, DME, and radar transmitters. 15 W PEAK , 960 – 1215 MHz MICROWAVE POWER TRANSISTORS NPN SILICON • Guaranteed Performance @ 1090 MHz, 50 Vdc


    Original     		MRF1015MB/D MRF1015MB MRF1015MB/D PDF

    Untitled

    Abstract: No abstract text available
    Text: MRF1015MA Transistors Bipolar NPN UHF/Microwave Transisitor Military/High-RelN V BR CEO (V)60â V(BR)CBO (V)60 I(C) Max. (A)1.0 Absolute Max. Power Diss. (W)17.5 Minimum Operating Temp (øC)-65 Maximum Operating Temp (øC)150þ I(CBO) Max. (A)1.0m @V(CBO) (V) (Test Condition)50


    Original     		MRF1015MA PDF

    MRF1015MB

    Abstract: 1090
    Text: MOTOROLA Order this document by MRF1015MB/D SEMICONDUCTOR TECHNICAL DATA The RF Line MRF1015MB Microwave Pulse Power Transistors Designed for Class B and C common base amplifier applications in short and long pulse TACAN, IFF, DME, and radar transmitters.


    Original     		MRF1015MB/D MRF1015MB MRF1015MB 1090 PDF

    376B

    Abstract: MRF10150 MRF10500 5Bp power
    Text: MOTOROLA Order this document by MRF10150/D SEMICONDUCTOR TECHNICAL DATA The RF Line Microwave Pulse Power Transistor MRF10150 . . . designed for 1025–1150 MHz pulse common base amplifier applications such as TCAS, TACAN and Mode–S transmitters. • Guaranteed Performance @ 1090 MHz


    Original     		MRF10150/D MRF10150 MRF10150/D* 376B MRF10150 MRF10500 5Bp power PDF

    5Bp power control

    Abstract: TACAN 41 Motorola 406 5Bp power motorola rf device data book TACAN 41 RF transistor transistor z4 51 MRF10150 MRF10500 376B
    Text: MOTOROLA Order this document by MRF10150/D SEMICONDUCTOR TECHNICAL DATA The RF Line Microwave Pulse Power Transistor MRF10150 . . . designed for 1025 – 1150 MHz pulse common base amplifier applications such as TCAS, TACAN and Mode–S transmitters. • Guaranteed Performance @ 1090 MHz


    Original     		MRF10150/D MRF10150 MRF10150/D* 5Bp power control TACAN 41 Motorola 406 5Bp power motorola rf device data book TACAN 41 RF transistor transistor z4 51 MRF10150 MRF10500 376B PDF

    motorola rf Power Transistor

    Abstract: Motorola Microwave power Transistor 376B MRF10150 MRF10500 TACAN 41 Motorola 406
    Text: MOTOROLA Order this document by MRF10150/D SEMICONDUCTOR TECHNICAL DATA Microwave Pulse Power Transistor MRF10150 . . . designed for 1025–1150 MHz pulse common base amplifier applications such as TCAS, TACAN and Mode–S transmitters. • Guaranteed Performance @ 1090 MHz


    Original     		MRF10150/D MRF10150 MRF10150/D* motorola rf Power Transistor Motorola Microwave power Transistor 376B MRF10150 MRF10500 TACAN 41 Motorola 406 PDF

    376B

    Abstract: MRF10150 MRF10500
    Text: Order this document by MRF10150/D SEMICONDUCTOR TECHNICAL DATA The RF Line Microwave Pulse Power Transistor MRF10150 . . . designed for 1025–1150 MHz pulse common base amplifier applications such as TCAS, TACAN and Mode–S transmitters. • Guaranteed Performance @ 1090 MHz


    Original     		MRF10150/D MRF10150 376B MRF10150 MRF10500 PDF

    TACAN transistor 150w

    Abstract: 376B MRF10150 MRF10500
    Text: MRF10150 Microwave Pulse Power Silicon NPN Transistor 150W peak , 1025–1150MHz M/A-COM Products Released - Rev. 07.07 Product Image Designed for 1025–1150 MHz pulse common base amplifier applications such as TCAS, TACAN and Mode–S transmitters. •


    Original     		MRF10150 1150MHz MRF10500 TACAN transistor 150w 376B MRF10150 PDF

    MC68B21CP

    Abstract: xcm916x1cth16 transistor marking code 12W SOT-23 sg379 MC68B54P XC68HC805P18CDW mc68b50cp MC2830 NE555N CHN NE555N
    Text: SG379/D REV 7 Semiconductor Products Sector NORTH AMERICA SALES AND DISTRIBUTION PRICE LIST THIS BOOK IS IN COMPUTER SORT PRODUCT CLASSIFICATION – Please see General Information Section 1.3 EFFECTIVE DATE: JANUARY 10, 1998 General Information 1 Cross References


    Original     		SG379/D 1N965BRL ZEN15V 1N751AS 1N967BRL ZEN18V 1N751ASRL 1N968BRL ZEN20V MC68B21CP xcm916x1cth16 transistor marking code 12W SOT-23 sg379 MC68B54P XC68HC805P18CDW mc68b50cp MC2830 NE555N CHN NE555N PDF

    MHW707-2

    Abstract: MHW707-1 MRF947T1 equivalent mhw704 CR2428 MHW591 MHW592 MHW593 MHW707 MRF861
    Text: RF Products In Brief . . . While Motorola is considered to be the supermarket for semiconductor products, there is not a category in which the selection is more diverse, or more complete, than in products designed for RF system applications. From MOS, bipolar


    Original     		714U/1 MHLW8000 MHW707-2 MHW707-1 MRF947T1 equivalent mhw704 CR2428 MHW591 MHW592 MHW593 MHW707 MRF861 PDF

    MRF648

    Abstract: TPV3100 TPV-3100 TP9383 SD1393 MRF238 MOTOROLA MRF188 TP9380 mrf10500 mrf422
    Text: June 1999 ST CROSS REFERENCE WITH MOTOROLA INDUSTRY PART NUMBER ST REPLACEMENT PREFERENCE INDUSTRY PART NUMBER ST REPLACEMENT PREFERENCE 2N5944 SD1134 MRF859 SD1423 2N5945 2N5946 2N6082 2N6084 2N6439 MHW912 MHW914 MHW916 MRA1600-2 MRF134 MRF136 MRF136Y MRF137


    Original     		2N5944 SD1134 MRF859 SD1423 2N5945 2N5946 2N6082 2N6084 2N6439 MHW912 MRF648 TPV3100 TPV-3100 TP9383 SD1393 MRF238 MOTOROLA MRF188 TP9380 mrf10500 mrf422 PDF

    Untitled

    Abstract: No abstract text available
    Text: O rd e r this data sheet by M R F10150H/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA MRF10150H’ Microwave Pulse Power Transistor 150 Watts Peak NPN 1025-1150 MHz CPT0 Designed for 1025-1150 MHz pulse common base amplifiers. • Guaranteed Performance at 1090 MHz


    OCR Scan     		F10150H/D MRF10150H' MRF10150HX MRF10150HXV MRF10150HS MRF10150HC 376B-02 1PHX31252-1 MRF10150H/D PDF

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line MRF1015MB Microwave Pulse Power Transistors Designed for Class B and C common base amplifier applications in short and long pulse TACAN, IFF, DME, and radar transmitters. 15 W PEAK , 960-1215 MHz MICROWAVE POWER


    OCR Scan     		PDF

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR MRF1015MA MRF1015MB TECHNICAL DATA The RF Line 16 W R E A K 9 6 0 -1 2 1 6 MHz MICROWAVE POWER TRANSISTORS MICROWAVE PULSE POWER TRANSISTORS . . designed for C la s s B and C com m on b a se am p lifier applications in short and long p ulse TA C A N , IFF, D M E, and radar tran sm itte rs.


    OCR Scan     		MRF1015MA MRF1015MB 1015M MRF1015MA, PDF

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MRF1015MA/D SEMICONDUCTOR TECHNICAL DATA The RF Line Microwave Pulse Power Transistors MRF1015MA MRF1015MB . . . designed for Class B and C common base amplifier applications in short and long pulse TACAN, IFF, DME, and radar transmitters.


    OCR Scan     		MRF1015MA/D MRF1015MA MRF1015MB PDF

    motorola 2961

    Abstract: 2961 motorola MRF1015MC
    Text: 15E 0 I b3b72SM M OTOROLA SC 0007^00 XSTRS/R 1 | F M OTOROLA •I SEM ICONDUCTOR MRF1015MA MRF1015MB MRF1015MC T E C H N IC A L DATA The RF Line 15 W P E A K 9 6 0 -1 2 1 5 M Hz MICROWAVE POWER TRANSISTORS MICROWAVE PULSE POWER TRANSISTORS N P N S IL IC O N


    OCR Scan     		b3b72SM MRF1015MA MRF1015MB MRF1015MC MRF1015MA, MRF1015MB, RF1015M motorola 2961 2961 motorola MRF1015MC PDF

    Motorola transistors MRF 947

    Abstract: trimpots 3296 transistor C5386 1n4740 2N5591 Motorola 2N5688 CQ 542 Transistor npn motorola equivalent transistor of 2sc3358 HB215/D ic cd 2399 gp
    Text: Selector Guide 1 Discrete Transistor Data Sheets Amplifier Data Sheets Monolithic Integrated Circuit H Data Sheets mm Case Dimensions Cross Reference and Sales Offices 6 M MOTOROLA RF Device Data This publication presents technical information for the several product families that


    OCR Scan     		2PHX11136Q-17 Motorola transistors MRF 947 trimpots 3296 transistor C5386 1n4740 2N5591 Motorola 2N5688 CQ 542 Transistor npn motorola equivalent transistor of 2sc3358 HB215/D ic cd 2399 gp PDF

    triac zd 607

    Abstract: 1n5204 CA2820 TRW 2N4427 equivalent bfr91 2N6823 842 317 SO8 BD243 PINOUT BD529 bf506 BF845
    Text: MASTER SELECTION GUIDE EUROPEAN SUPPLEMENT This is the European supplement to the USA edition of the Master Selection Guide, SG73/D REV 3. It should be read along with the USA edition. The supplement carries amendments to sections 1 and 5 in the USA edition.


    OCR Scan     		SG73/D triac zd 607 1n5204 CA2820 TRW 2N4427 equivalent bfr91 2N6823 842 317 SO8 BD243 PINOUT BD529 bf506 BF845 PDF

    2N4427 equivalent bfr91

    Abstract: bfr90 equivalent 2N5503 MRA1600-30 TPV-595A 2N3553 equivalent MRF477 equivalent MRA0500-19L 2N6084 equivalent MOTOROLA TRANSISTOR MRF239
    Text: RF Power TMOS FETs Motorola RF Power MOSFETs, trademark TMOS , are constructed using a planar process to enhance manufacturing repeatability. They are N-channet field effect transistors with an oxide insulated gate which controls vertical current flow. Compared with bipolar transistors, RF Power FETs exhibit higher gain, higher input impedance, enhanced therm al stability


    OCR Scan     		PoweS3666 MRF3866 2N2857 2N3866 2N5943 MRF904 MRF571 2N4958 2N3160 2N5583 2N4427 equivalent bfr91 bfr90 equivalent 2N5503 MRA1600-30 TPV-595A 2N3553 equivalent MRF477 equivalent MRA0500-19L 2N6084 equivalent MOTOROLA TRANSISTOR MRF239 PDF

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line M icrowave Pulse Power Transistor . . . designed for 10 2 5 -1 1 5 0 MHz pulse com mon base am plifier applications such as TCAS, TACAN and M o de-S transmitters. • Guaranteed Performance @ 1090 MHz Output Power = 150 W alts Peak


    OCR Scan     		MRF10500 MRF10150 PDF