Untitled
Abstract: No abstract text available
Text: Document Number: MRFG35002N6A Rev. 2, 6/2009 Gallium Arsenide PHEMT RF Power Field Effect Transistor MRFG35002N6AT1 LIFETIME BUY Designed for WLL/MMDS/BWA or UMTS driver applications. Characterized from 500 to 5000 MHz. Device is unmatched and is suitable for use in Class AB
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MRFG35002N6A
MRFG35002N6AT1
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A113
Abstract: A114 A115 AN1955 C101 JESD22 MRFG35002N6AT1 arco 466
Text: Freescale Semiconductor Technical Data Document Number: MRFG35002N6A Rev. 2, 6/2009 Gallium Arsenide PHEMT RF Power Field Effect Transistor MRFG35002N6AT1 Designed for WLL/MMDS/BWA or UMTS driver applications. Characterized from 500 to 5000 MHz. Device is unmatched and is suitable for use in Class AB
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MRFG35002N6A
MRFG35002N6AT1
A113
A114
A115
AN1955
C101
JESD22
MRFG35002N6AT1
arco 466
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Untitled
Abstract: No abstract text available
Text: Document Number: MRFG35002N6 Rev. 2, 1/2008 Freescale Semiconductor Technical Data MRFG35002N6T1 replaced by MRFG35002N6AT1. Gallium Arsenide PHEMT MRFG35002N6T1 Designed for WLL/MMDS/BWA or UMTS driver applications. Characterized from 500 to 5000 MHz. Device is unmatched and is suitable for use in Class AB
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MRFG35002N6
MRFG35002N6T1
MRFG35002N6AT1.
MRFG35002N6T1
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GT1040
Abstract: 466 907 A113 AN1955 MRFG35002N6AT1 MRFG35002N6T1
Text: Document Number: MRFG35002N6 Rev. 2, 1/2008 Freescale Semiconductor Technical Data MRFG35002N6T1 replaced by MRFG35002N6AT1. Gallium Arsenide PHEMT MRFG35002N6T1 Designed for WLL/MMDS/BWA or UMTS driver applications. Characterized from 500 to 5000 MHz. Device is unmatched and is suitable for use in Class AB
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MRFG35002N6
MRFG35002N6T1
MRFG35002N6AT1.
MRFG35002N6T1
GT1040
466 907
A113
AN1955
MRFG35002N6AT1
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A113
Abstract: A114 A115 AN1955 C101 JESD22 MRFG35002N6AT1
Text: Freescale Semiconductor Technical Data Document Number: MRFG35002N6A Rev. 0, 12/2007 Gallium Arsenide PHEMT RF Power Field Effect Transistor MRFG35002N6AT1 Designed for WLL/MMDS/BWA or UMTS driver applications. Characterized from 500 to 5000 MHz. Device is unmatched and is suitable for use in Class AB
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MRFG35002N6A
MRFG35002N6AT1
A113
A114
A115
AN1955
C101
JESD22
MRFG35002N6AT1
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ATC100A101
Abstract: murata gaas field effect transistor atc100a ATC100A1 N 341 AB A113 A114 A115 AN1955 C101
Text: Freescale Semiconductor Technical Data Document Number: MRFG35002N6A Rev. 1, 12/2008 Gallium Arsenide PHEMT RF Power Field Effect Transistor MRFG35002N6AT1 Designed for WLL/MMDS/BWA or UMTS driver applications. Characterized from 500 to 5000 MHz. Device is unmatched and is suitable for use in Class AB
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MRFG35002N6A
MRFG35002N6AT1
ATC100A101
murata gaas field effect transistor
atc100a
ATC100A1
N 341 AB
A113
A114
A115
AN1955
C101
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Untitled
Abstract: No abstract text available
Text: Freescale Semiconductor Technical Data Document Number: MRFG35002N6A Rev. 2, 6/2009 Gallium Arsenide PHEMT RF Power Field Effect Transistor MRFG35002N6AT1 Designed for WLL/MMDS/BWA or UMTS driver applications. Characterized from 500 to 5000 MHz. Device is unmatched and is suitable for use in Class AB
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MRFG35002N6A
MRFG35002N6AT1
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MPC5634M
Abstract: MRF6VP11KH mw4ic2020nb S12XEQ512 MPC5516E MXC300-30 MPC5602P MSC7120 mpx6115 S08DZ128
Text: Because of an order from the United States International Trade Commission, BGA-packaged product lines and part numbers indicated here currently are not available from Freescale for import or sale in the United States prior to September 2010: ,
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DSP56311EVM
DSP56311VF150
DSP56311VL150
DSP56321VF200
DSP56321VF220
DSP56321VF240
DSP56321VF275
DSP56321VL200
DSP56321VL220
DSP56321VL240
MPC5634M
MRF6VP11KH
mw4ic2020nb
S12XEQ512
MPC5516E
MXC300-30
MPC5602P
MSC7120
mpx6115
S08DZ128
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MC908GP32
Abstract: 9S12XHZ256 DSP56309VF100A 9S08DZ32 mpx6115 MXC300-30 xc912bc32 DSP56309AG100A MRF6VP2600H 9S08SG16
Text: Freescale Semiconductor Product Selector Guide Cross Reference Quarter 4, 2007 SG1000CRQ42007 Rev 0 Introduction The Freescale Semiconductor Product Selector Guide Cross-Reference provides a listing of all products documented in the eight Freescale Semiconductor Product Selector Guides. The Product Cross-Reference group lists new and existing
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SG1000CRQ42007
SG187,
SG1002Q42007,
SG1004Q42007,
MC908GP32
9S12XHZ256
DSP56309VF100A
9S08DZ32
mpx6115
MXC300-30
xc912bc32
DSP56309AG100A
MRF6VP2600H
9S08SG16
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power transistors table
Abstract: MW6S010NR1 mrfe6s9060n MHW6342TN Motorola Microwave power Transistor "RF high power Amplifier" MRF6V2300N MRFG35010R1 MRF6P23190HR6 MRF373 PUSH PULL
Text: RF Products Freescale Semiconductor Selector Guide SG46 Rev. 34 6/2008 RF Product Selector Guide Offering a broad portfolio of RF products, Freescale Semiconductor primarily serves the wireless infrastructure, wireless subscriber, general purpose amplifier, broadcast and industrial markets. Freescale pioneered RF technology and continues to be the leader in the field by providing the quality,
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MS08QD4
Abstract: MCF52236 MPC56xx instruction set digrf MCF52252 MMM6000 MMM7010 MPC5602B MS08EL32 MPC56xx
Text: SG1000mini Freescale Semiconductor Product Selector Guides Quarter 2, 2009 Product Selector Guide Cross-Reference, SG1000CR Automotive, SG187 Analog and Mixed Signal Power Management, SG1002 Digital Signal Processors DSP , SG1004 Network/Embedded Processors, SG1007
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SG1000mini
SG1000CR
SG187
SG1002
SG1004
SG1007
SG1009
SG1010
SG1013
32-Bit
MS08QD4
MCF52236
MPC56xx instruction set
digrf
MCF52252
MMM6000
MMM7010
MPC5602B
MS08EL32
MPC56xx
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GT1040
Abstract: 100A101 A113 AN1955 MRFG35002N6AT1 MRFG35002N6T1
Text: Document Number: MRFG35002N6 Rev. 2, 1/2008 Freescale Semiconductor Technical Data Gallium Arsenide PHEMT MRFG35002N6T1 RF Power Field Effect Transistor LIFETIME BUY Designed for WLL/MMDS/BWA or UMTS driver applications. Characterized from 500 to 5000 MHz. Device is unmatched and is suitable for use in Class AB
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MRFG35002N6
MRFG35002N6T1
GT1040
100A101
A113
AN1955
MRFG35002N6AT1
MRFG35002N6T1
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gsm booster circuit
Abstract: mrf373al u880 RF MODULATORS mrf9030n MRF6VP11KH MRF6VP2600H MRF5S21045N circuit booster gsm mrfe6s9060
Text: RF Product Focus Products Quarter 4, 2007 SG1009Q42007 Rev 0 RF Industrial, Scientific and Medical Transistors RF LDMOS Power Transistors RF GaAS Power Transistors RF WiMAX, WiBro, BWA Power Transistors RF Amplifier ICs and Modules RF General Purpose Amplifiers
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SG1009Q42007
MRF6VP11KH
MRF6VP21KH
MRF6VP41KH/HS
gsm booster circuit
mrf373al
u880
RF MODULATORS
mrf9030n
MRF6VP2600H
MRF5S21045N
circuit booster gsm
mrfe6s9060
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9s12ha48
Abstract: 9S12XHZ512 9s12ha32 9s12hy64 mw4ic2020nb MPC5516E 9S08DZ32 MPC8640D MXC300-30 SG187
Text: Freescale Semiconductor Product Selector Guide Cross-Reference Quarter 4, 2008 SG1000CRQ42008 Rev 0 Introduction The Freescale Semiconductor Product Selector Guide Cross-Reference provides a listing of all products documented in the seven Freescale Semiconductor Product Selector Guides. The Product Cross-Reference group lists new and
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SG1000CRQ42008
SG187,
SG1002Q42008,
SG1004Q42008,
9s12ha48
9S12XHZ512
9s12ha32
9s12hy64
mw4ic2020nb
MPC5516E
9S08DZ32
MPC8640D
MXC300-30
SG187
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gsm booster circuit
Abstract: MRF5P21180H gsm 900 dual band signal booster gsm signal Booster MRF8S21170H gsm signal booster circuit circuit booster gsm MRF6VP11KH MW6S004N MC44BS373
Text: RF Product Focus Products Quarter 2, 2009 SG1009Q22009 Rev 0 RF Industrial, Scientific and Medical Transistors RF LDMOS Power Transistors RF GaAS Power Transistors RF WiMAX, WiBro, BWA Power Transistors RF Amplifier ICs RF General Purpose Amplifiers RF Modulators, Booster - Splitter, Stereo Encoders, Silicon Tuners
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SG1009Q22009
MRF6VP11KH
MRF6VP21KH
MRF6VP41KH/HS
gsm booster circuit
MRF5P21180H
gsm 900 dual band signal booster
gsm signal Booster
MRF8S21170H
gsm signal booster circuit
circuit booster gsm
MRF6VP11KH
MW6S004N
MC44BS373
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