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    Untitled

    Abstract: No abstract text available
    Text: O K I Semiconductor MSM511001B 1,048,576-Word x 1-Bit DYNAMIC RAM : NIBBLE M ODE TYPE DESCRIPTION The MSM511001B is a new generation dynamic RAM organized as 1,048,576-word x 1-bit. The technology used to fabricate the MSM511001B is OKI's CMOS silicon gate process technology. The


    OCR Scan     		MSM511001B 576-Word MSM511001B R1001B D0177fiD PDF

    18-PIN

    Abstract: 26-PIN ZIP20-P-400 MSM OKI
    Text: O K I Semiconductor MSM5 1 1 0 0 1 B 1,048,576-Word x 1-Bit DY N A M IC R A M : N IBBLE M O D E TYPE DESCRIPTION The MSM511001B is a new generation dynamic RAM organized as 1,048,576-word x 1-bit. The technology used to fabricate the MSM511001B is OKI's CMOS silicon gate process technology. The


    OCR Scan     		MSM511001B 576-Word MSM511001B b724S40 L724240 18-PIN 26-PIN ZIP20-P-400 MSM OKI PDF

    Untitled

    Abstract: No abstract text available
    Text: O K I semiconductor MSM511001B 1,048,576-Word x 1-Bit DYNAMIC RAM GENERAL DESCRIPTION The MSM511001B is a new generation dynamic RAM organized as 1,048,576 words x 1 bit. The technology used to fabricate the MSM511001B is OKI's CMOS silicon gate process technology. The


    OCR Scan     		MSM511001B 576-Word MSM511001B refre246 MSM511001BÂ MSM511001B1 PDF