DM05
Abstract: No abstract text available
Text: ADVANCE MICRON I 4 MEG TECHNOLOGY. INC. X MT3D49 9 DRAM MODULE DRAM 4 MEG M O D I IL F IV IW L /U L t. 4 m e g a b y te , 5v, FAST PAGE MODE X 9 FEATURES OPTIONS PIN ASSIGNMENT Front View 30-Pin SIMM (DD-2) — / ~ ö~ Vcc CAS DQ1 A0 A1 DQ2 A2 A3 Vss DQ3
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MT3D49
30-Pin
MT3D49M-6
110ns
130ns
MT3049
DM05
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Untitled
Abstract: No abstract text available
Text: MICRON TECHNOLOGY INC M ADVANCE IC R O N 4 MEG SSE T> m DRAM MODULE X MT3D49 9 DRAM MODULE b l l l S 4 tì 0004737 7TÔ • MRN 4 MEG x 9 DRAM - FEATURES • Industry standard pinout in a 30-pin, single-in-line m emory module • High-perform ance, CM OS silicon-gate process
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MT3D49
30-pin,
048-cycle
30-Pin
T3D49
A0-A10;
A0-A10
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MT3D49
Abstract: No abstract text available
Text: PRELIMINARY M IC R O N 4 MEG 4 MEG DRAM MODULE X MT3D49 9 DRAM MODULE 9 DRAM X FAST PAGE MODE FEATURES PIN ASSIGNMENT Top View OPTIONS MARKING • Timing 60ns access 70ns access -6 -7 • Packages Leadless 30-pin SIMM 30-Pin SIMM (DE-6) V cc CAS DQ1 AO A1
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MT3D49
30-pin,
048-cycle
30-Pin
A0-A10;
A0-A10
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MT4C4M4
Abstract: No abstract text available
Text: ADVANCE I^ IIC R O N 4 MEG DRAM MODULE X MT3D49 9 DRAM MODULE 4 MEG x 9 DRAM FAST-PAGE-MODE FEATURES • Industry-standard pinout in a 30-pin, single-in-line memory module • High-performance CMOS silicon-gate process • Single 5V ±10% power supply • Low power, 12mW standby; 775mW active, typical
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MT3D49
30-pin,
775mW
048-cycle
30-Pin
7MT3D49
A0-A10;
MT3049
A0-A10
MT4C4M4
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MT4C1004
Abstract: No abstract text available
Text: ADVANCE I^ IIC Z R O N 4 MEG 4 MEG X MT3D49 9 DRAM MODULE 9 DRAM FAST PAGE MODE FEATURES • Industry standard pinout in a 30-pin, single-in-line memory module • High-performance, CMOS silicon-gate process • Single 5V ±10% power supply • Low power, 12mW standby; 775mW active, typical
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MT3D49
30-pin,
775mW
048-cycle
30-pin
MT3D49M-6
MT4C1004
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Untitled
Abstract: No abstract text available
Text: ADVANCE M IC R O N 4 MEG 4 MEG X MT3D49 9 DRAM MODULE 9 DRAM FAST PAGE MODE FEATURES • Industry standard pinout in a 30-pin, single-in-line memory m odule • High-performance, CMOS silicon-gate process • Single 5V ±10% pow er supply • Low power, 12mW standby; 775mW active, typical
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MT3D49
30-pin,
775mW
048-cycle
30-Pin
13S5-ONLY
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Untitled
Abstract: No abstract text available
Text: ADVANCE 4 MEG DRAM MODULE 4 MEG X MT3D49 9 DRAM MODULE X 9 DRAM FAST-PAGE-MODE FEATURES • Industry-standard pinout in a 30-pin, single-in-line m emory module • High-perform ance CM OS silicon-gate process • Single 5V ±10% pow er supply • Low power, 12mW standby; 775mW active, typical
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PDF
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MT3D49
30-pin,
775mW
048-cycle
30-Pin
A0-A10;
A0-A10
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T3D49
Abstract: FPM DRAM 30-pin SIMM MT4C1004
Text: ADVANCE |u iic : r o n 4 MEG X MT3D49 9 DRAM MODULE 4 MEG x 9 DRAM MODULE 4 MEGABYTE, 5V, FAST PAGE MODE FEATURES PIN ASSIGNMENT Front View • JEDEC- and industry-standard pinout in a 30-pin, single-in-line m emory module (SIMM) • High-perform ance CM OS silicon-gate process
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MT3D49
30-pin,
725mW
048-cycle
30-Pin
MT3D49M
j1995,
MT3049
T3D49
FPM DRAM 30-pin SIMM
MT4C1004
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY 4 MEG X 9 DRAM MOEDULE 5EM1CQHOUCTOR. IH£L 4 MEG DRAM MODULE X 9 DRAM FAST PAGE MODE FEATURES • Industry-standard pinout in a 30-pin, single-in-line memory module • High-performance CMOS silicon-gate process • Single 5V ±10% power supply
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30-pin,
575mW
048-cycle
30-Pin
MT3D49
T3049
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