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    MT45W4MW Price and Stock

    Micron Technology Inc MT45W4MW16PFA-70-WT

    IC PSRAM 64MBIT PARALLEL 48VFBGA
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    DigiKey MT45W4MW16PFA-70-WT Box 2,000
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    Micron Technology Inc MT45W4MW16PCGA-70-IT

    IC PSRAM 64MBIT PARALLEL 48VFBGA
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    DigiKey MT45W4MW16PCGA-70-IT Tray
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    Micron Technology Inc MT45W4MW16BCGB-708-WT

    IC PSRAM 64MBIT PARALLEL 54VFBGA
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    DigiKey MT45W4MW16BCGB-708-WT Tray
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    Micron Technology Inc MT45W4MW16BCGB-701-WT

    IC PSRAM 64MBIT PARALLEL 54VFBGA
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    DigiKey MT45W4MW16BCGB-701-WT Tray
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    Micron Technology Inc MT45W4MW16PFA-85-WT-TR

    IC PSRAM 64MBIT PARALLEL 48VFBGA
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey MT45W4MW16PFA-85-WT-TR Reel 2,000
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    Find more MT45W4MW price and stock on Findchips.com

    MT45W4MW Datasheets (80)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    MT45W4MW16BBB-706 L WT Micron Technology Integrated Circuits (ICs) - Memory - IC PSRAM 64M PARALLEL 54VFBGA Original PDF
    MT45W4MW16BBB-706LWT Micron Technology Memory, Integrated Circuits (ICs), IC PSRAM 64MBIT 70NS 54VFBGA Original PDF
    MT45W4MW16BBB-706LWT Micron Technology Memory, Integrated Circuits (ICs), IC PSRAM 64MBIT 70NS 54VFBGA Original PDF
    MT45W4MW16BBB-706 L WT TR Micron Technology Integrated Circuits (ICs) - Memory - IC PSRAM 64M PARALLEL 54VFBGA Original PDF
    MT45W4MW16BBB-706 WT Micron 64Mb CellularRAM Original PDF
    MT45W4MW16BBB-706WT Micron Technology Memory, Integrated Circuits (ICs), IC PSRAM 64MBIT 70NS 54VFBGA Original PDF
    MT45W4MW16BBB-706 WT TR Micron Technology Integrated Circuits (ICs) - Memory - IC PSRAM 64M PARALLEL 54VFBGA Original PDF
    MT45W4MW16BBB-708WT Micron Technology Memory, Integrated Circuits (ICs), IC PSRAM 64MBIT 70NS 54VFBGA Original PDF
    MT45W4MW16BBB-708 WT TR Micron Technology Integrated Circuits (ICs) - Memory - IC PSRAM 64M PARALLEL 54VFBGA Original PDF
    MT45W4MW16BCGB-7013 WT Micron 64Mb CellularRAM Original PDF
    MT45W4MW16BCGB-701 IT Micron 64Mb CellularRAM Original PDF
    MT45W4MW16BCGB-701 IT TR Micron Technology Integrated Circuits (ICs) - Memory - IC PSRAM 64M PARALLEL 54VFBGA Original PDF
    MT45W4MW16BCGB-701 WT Micron 64Mb CellularRAM Original PDF
    MT45W4MW16BCGB-701WT Micron Technology Memory, Integrated Circuits (ICs), IC PSRAM 64MBIT 70NS 54VFBGA Original PDF
    MT45W4MW16BCGB-701 WT TR Micron Technology Integrated Circuits (ICs) - Memory - IC PSRAM 64M PARALLEL 54VFBGA Original PDF
    MT45W4MW16BCGB-708 IT Micron 64Mb CellularRAM Original PDF
    MT45W4MW16BCGB-708 WT Micron 64Mb CellularRAM Original PDF
    MT45W4MW16BCGB-708WT Micron Technology Memory, Integrated Circuits (ICs), IC PSRAM 64MBIT 70NS 54VFBGA Original PDF
    MT45W4MW16BCGB-708 WT TR Micron Technology Integrated Circuits (ICs) - Memory - IC PSRAM 64M PARALLEL 54VFBGA Original PDF
    MT45W4MW16BFB-701 WT Micron ASYNC/PAGE/BURST CellularRAM MEMORY Original PDF

    MT45W4MW Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    MT45W4MW16PCGA

    Abstract: No abstract text available
    Text: 64Mb: 4 Meg x 16 Async/Page CellularRAM 1.0 Features Async/Page CellularRAM 1.0 MT45W4MW16PCGA Features Figure 1: • Single device supports asynchronous and page operations • VCC, VCCQ voltages: – 1.7–1.95V VCC – 1.V–3.3V VCCQ • Random access time: 70ns


    Original     		MT45W4MW16PCGA A64Mb: 09005aef81f0698d 09005aef81f06935 MT45W4MW16PCGA PDF

    MT45W2MW16PFA-70 WT

    Abstract: PX300 PW204 pw306 PW203 PW303
    Text: PRELIMINARY‡ 4 MEG x 16, 2 MEG x 16 ASYNC/PAGE CellularRAM MEMORY ASYNCHRONOUS CellularRAMTM MT45W4MW16PFA MT45W4MV16PFA MT45W4ML16PFA MT45W2MW16PFA MT45W2MV16PFA MT45W2ML16PFA For the latest data sheet, please refer to Micron’s Web site: www.micron.com/datasheets


    Original     		MT45W4MW16PFA MT45W4MV16PFA MT45W4ML16PFA MT45W2MW16PFA MT45W2MV16PFA MT45W2ML1oducts MT45W2MW16PFA-70 WT PX300 PW204 pw306 PW203 PW303 PDF

    Untitled

    Abstract: No abstract text available
    Text: 64Mb: 4 Meg x 16 Async/Page/Burst CellularRAM 1.5 Memory Features Async/Page/Burst CellularRAM 1.5 Memory MT45W4MW16BCGB Features Figure 1: • Single device supports asynchronous, page, and burst operations • VCC, VCCQ voltages: – 1.7–1.95V VCC – 1.7–3.3V VCCQ1


    Original     		MT45W4MW16BCGB 16-word 09005aef8247bd51/Source: 09005aef8247bd83 133mhz_ PDF

    MT45W4MW16PCGA

    Abstract: No abstract text available
    Text: 64Mb: 4 Meg x 16 Async/Page CellularRAM 1.0 Features Async/Page CellularRAM 1.0 MT45W4MW16PCGA Features Figure 1: • Single device supports asynchronous and page operations • VCC, VCCQ voltages – 1.7–1.95V VCC – 1.7–3.3V VCCQ • Random access time: 70ns


    Original     		MT45W4MW16PCGA 48-Ball 09005aef81f0698d 09005aef81f06935 MT45W4MW16PCGA PDF

    TCO 706

    Abstract: No abstract text available
    Text: PRELIMINARY‡ 4 MEG x 16, 2 MEG x 16 ASYNC/PAGE/BURST CellularRAM MEMORY BURST CellularRAMTM MT45W4MW16BFB MT45W2MW16BFB MT45W4ML16BFB MT45W2ML16BFB Features Figure 1: Ball Assignment 54-Ball FBGA • • • • • • • • Single device supports asynchronous, page, and burst


    Original     		MT45W4MW16BFB MT45W2MW16BFB MT45W4ML16BFB MT45W2ML16BFB 54-Ball 09005aef80be2036/09005aef80be1fbd TCO 706 PDF

    Untitled

    Abstract: No abstract text available
    Text: 64Mb: 4 Meg x 16 Async/Page/Burst CellularRAM 1.5 Memory Features Async/Page/Burst CellularRAMTM 1.5 Memory MT45W4MW16BCGB Features Figure 1: • Single device supports asynchronous, page, and burst operations • VCC, VCCQ voltages: 1.70V–1.95V VCC 1.70V–3.30V VCCQ1


    Original     		MT45W4MW16BCGB 09005aef816fba98 09005aef816fbaa3 PDF

    Untitled

    Abstract: No abstract text available
    Text: ADVANCE‡ 4 MEG x 16, 2 MEG x 16 ASYNC/PAGE/BURST CellularRAM MEMORY BURST CellularRAMTM MT45W4MW16BFB MT45W2MW16BFB MT45W4ML16BFB MT45W2ML16BFB Features Figure 1: Ball Assignment 54-Ball FBGA For the latest data sheet, please refer to Micron’s Web site:


    Original     		09005aef80be2036/09005aef80be1fbd PDF

    PX3541

    Abstract: PX3551 Burst CellularRAM Memory PW245 T2025
    Text: ADVANCE‡ 4 MEG x 16, 2 MEG x 16 ASYNC/PAGE/BURST CellularRAM MEMORY BURST CellularRAMTM MT45W4MW16BFB MT45W2MW16BFB Features Figure 1: Ball Assignment 54-Ball FBGA For the latest data sheet, please refer to Micron’s Web site: www.micron.com/datasheets.


    Original     		MT45W4MW16BFB MT45W2MW16BFB 54-Ball Int/03 09005aef80be2036/09005aef80be1fbd PX3541 PX3551 Burst CellularRAM Memory PW245 T2025 PDF

    Untitled

    Abstract: No abstract text available
    Text: 4 Meg x 16 Async/Page CellularRAM 1.0 Memory Features Async/Page CellularRAMTM 1.0 Memory MT45W4MW16PFA Features Figure 1: • Asynchronous and page mode interface • Random access time: 70ns, 85ns • VCC, VCCQ voltages 1.70V–1.95V VCC 1.70V–3.30V VCCQ


    Original     		MT45W4MW16PFA 48-Ball 09005aef80be1ee8/Source: 09005aef80be1f7f PDF

    PW20

    Abstract: MT45W2MW16PFA-85 IT PW210 PW300 PX200 PX2101
    Text: PRELIMINARY‡ 4 MEG x 16, 2 MEG x 16 ASYNC/PAGE CellularRAM MEMORY ASYNCHRONOUS CellularRAMTM MT45W4MW16PFA MT45W4MV16PFA MT45W4ML16PFA MT45W2MW16PFA MT45W2MV16PFA MT45W2ML16PFA For the latest data sheet, please refer to Micron’s Web site: www.micron.com/datasheets


    Original     		MT45W4MW16PFA MT45W4MV16PFA MT45W4ML16PFA MT45W2MW16PFA MT45W2MV16PFA MT45W2ML16PFA 48-Ball PW20 MT45W2MW16PFA-85 IT PW210 PW300 PX200 PX2101 PDF

    FBGA DECODER

    Abstract: No abstract text available
    Text: 64Mb: 4 Meg x 16 Async/Page/Burst CellularRAM 1.5 Memory Features Async/Page/Burst CellularRAMTM 1.5 Memory MT45W4MW16BCGB Features Figure 1: • Single device supports asynchronous, page, and burst operations • VCC, VCCQ voltages: – 1.7–1.95V VCC – 1.7–3.3V VCCQ1


    Original     		MT45W4MW16BCGB 09005aef8247bd51/Source: 09005aef8247bd83 133mhz_ FBGA DECODER PDF

    Untitled

    Abstract: No abstract text available
    Text: 4 MEG x 16 ASYNC/PAGE CellularRAM MEMORY ASYNCHRONOUS CellularRAMTM MT45W4MW16PFA Features Figure 1: 48-Ball VFBGA • Asynchronous and page mode interface • Random Access Time: 70ns, 85ns • Page Mode Read Access Sixteen-word page size Interpage read access: 70ns, 85ns


    Original     		MT45W4MW16P MT45W4MW16PFA 48-Ball 09005aef80be1ee8 pdf/09005aef80be1f7f PDF

    Untitled

    Abstract: No abstract text available
    Text: Preliminary‡ 64Mb: 4 Meg x 16 Async/Page/Burst CellularRAM 1.5 Memory Features Async/Page/Burst CellularRAMTM 1.5 Memory MT45W4MW16BCGB Features Figure 1: • Single device supports asynchronous, page, and burst operations • VCC, VCCQ voltages: 1.70V–1.95V VCC


    Original     		MT45W4MW16BCGB 09005aef816fba98 09005aef816fbaa3 PDF

    Untitled

    Abstract: No abstract text available
    Text: 4 MEG x 16 ASYNC/PAGE/BURST CellularRAM MEMORY BURST CellularRAMTM MT45W4MW16BFB Features Figure 1: 54-Ball VFBGA • Single device supports asynchronous, page, and burst operations • VCC, VCCQ Voltages 1.70V–1.95V VCC 1.70V–3.30V VCCQ • Random Access Time: 70ns


    Original     		09005aef80be1fbd pdf/09005aef80be2036 PDF

    MT45W4MW16B

    Abstract: MT45W4MW16BFB-708LWT
    Text: 64Mb: 4 Meg x 16 Async/Page/Burst CellularRAM 1.0 Memory Features Async/Page/Burst CellularRAMTM 1.0 Memory MT45W4MW16B* *Note: Not recommended for new designs. For the latest data sheet, refer to Micron’s Web site: http://www.micron.com/products/psram/


    Original     		MT45W4MW16B* 09005aef80be1fbd/Source: 09005aef80be2036 MT45W4MW16B MT45W4MW16BFB-708LWT PDF

    PW2071

    Abstract: PW204 MT45W2MW16PFA-85 IT PW200 PW20 PW300 32Mb-Std PX-209 PW2091 PW303
    Text: PRELIMINARY‡ 4 MEG x 16, 2 MEG x 16 ASYNC/PAGE CellularRAM MEMORY ASYNCHRONOUS CellularRAMTM MT45W4MW16PFA MT45W4ML16PFA Features MT45W2MW16PFA MT45W2ML16PFA Figure 1: 48-Ball FBGA • Asynchronous and Page Mode interface • Random Access Time: 70ns, 85ns


    Original     		MT45W4MW16PFA MT45W4ML16PFA MT45W2MW16PFA MT45W2ML16PFA 48-Ball 09005aef810a7583 PW2071 PW204 MT45W2MW16PFA-85 IT PW200 PW20 PW300 32Mb-Std PX-209 PW2091 PW303 PDF

    Untitled

    Abstract: No abstract text available
    Text: 64Mb: 4 Meg x 16 Async/Page CellularRAM 1.0 Memory Features Async/Page CellularRAMTM 1.0 Memory MT45W4MW16P* *Note: Not recommended for new designs. For the latest data sheet, refer to Micron’s Web site: http://www.micron.com/products/psram/ Features Figure 1:


    Original     		MT45W4MW16P* 09005aef80be1ee8/Source: 09005aef80be1f7f PDF

    P24T

    Abstract: No abstract text available
    Text: Advance‡ 64Mb: 4 Meg x 16 Async/Page CellularRAM 1.0 Features Async/Page CellularRAM 1.0 MT45W4MW16PKGA Features Figure 1: • Single device supports asynchronous and page operations • VCC, VCCQ voltages: – 1.7–1.95V VCC – 1.7–3.6V VCCQ • Random access time: 70ns


    Original     		MT45W4MW16PKGA 48-Ball 09005aef826a90f7 09005aef826a9539 P24T PDF

    Untitled

    Abstract: No abstract text available
    Text: 4 Meg x 16 Async/Page/Burst CellularRAM 1.0 Memory Features Async/Page/Burst CellularRAMTM 1.0 Memory MT45W4MW16BFB Features Figure 1: • Single device supports asynchronous, page, and burst operations • Random access time: 70ns • VCC, VCCQ voltages 1.70V–1.95V VCC


    Original     		MT45W4MW16BFB 09005aef80be1fbd/Source: 09005aef80be2036 PDF

    Untitled

    Abstract: No abstract text available
    Text: 4 MEG x 16, 2 MEG x 16 ASYNC/PAGE CellularRAM MEMORY ASYNCHRONOUS CellularRAMTM MT45W4MW16PFA MT45W2MW16PFA Features Figure 1: 48-Ball VFBGA • Asynchronous and Page Mode interface • Random Access Time: 70ns, 85ns • Page Mode Read Access Sixteen-word page size


    Original     		MT45W4MW16P MT45W2MW16P MT45W4MW16PFA MT45W2MW16PFA 48-Ball 09005aef80be1ee8 pdf/09005aef80be1f7f PDF

    Untitled

    Abstract: No abstract text available
    Text: 4 MEG x 16 ASYNC/PAGE CellularRAM 1.0 MEMORY ASYNC/PAGE CellularRAMTM 1.0 MEMORY MT45W4MW16PFA Features Figure 1: 48-Ball VFBGA • Asynchronous and page mode interface • Random Access Time: 70ns, 85ns • VCC, VCCQ Voltages 1.70V–1.95V VCC 1.70V–3.30V VCCQ


    Original     		MT45W4MW16PFA 48-Ball 09005aef80be1ee8 pdf/09005aef80be1f7f PDF

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY‡ 4 MEG x 16, 2 MEG x 16 ASYNC/PAGE CellularRAM MEMORY ASYNCHRONOUS CellularRAMTM MT45W4MW16PFA MT45W4ML16PFA Features MT45W2MW16PFA MT45W2ML16PFA Figure 1: 48-Ball VFBGA • Asynchronous and Page Mode interface • Random Access Time: 70ns, 85ns


    Original     		MT45W4MW16PFA MT45W4ML16PFA MT45W2MW16PFA MT45W2ML16PFA 48-Ball 09005aef80be1ee8 PDF

    DEVICE MARKING CODE table

    Abstract: INFINEON transistor marking INFINEON TVS diode process marking code C5 marking code j6 sus material 304 MT45W4MW16B thd202
    Text: 4 MEG x 16 ASYNC/PAGE/BURST CellularRAM 1.0 MEMORY ASYNC/PAGE/BURST CellularRAMTM 1.0 MEMORY MT45W4MW16BFB Features Figure 1: 54-Ball VFBGA • Single device supports asynchronous, page, and burst operations • VCC, VCCQ Voltages 1.70V–1.95V VCC 1.70V–3.30V VCCQ


    Original     		MT45W4MW16BFB 54-Ball 09005aef80be1fbd pdf/09005aef80be2036 DEVICE MARKING CODE table INFINEON transistor marking INFINEON TVS diode process marking code C5 marking code j6 sus material 304 MT45W4MW16B thd202 PDF

    Untitled

    Abstract: No abstract text available
    Text: 4 MEG x 16, 2 MEG x 16 ASYNC/PAGE/BURST CellularRAM MEMORY BURST CellularRAMTM MT45W4MW16BFB MT45W2MW16BFB Features Figure 1: 54-Ball VFBGA • Single device supports asynchronous, page, and burst operations • VCC, VCCQ Voltages 1.70V–1.95V VCC 1.70V–3.30V VCCQ


    Original     		MT45W4MW16BFB MT45W2MW16BFB 54-Ball pdf/09005aef80be2036 09005aef80be1fbd PDF