Untitled
Abstract: No abstract text available
Text: [ M IC R O N MT4C4259 DRAM 256K x 4 DRAM QUAD CAS PARITY, FAST PAGE MODE FEATURES • Four independent CAS controls offer individual m anipulation to each of the four data In p u t/O u tp u t ports DQ1 through DQ4 . • Offers a single-chip solution to byte-level parity for 36bit w ords w hen using 256K x 4 DRAMs for memory.
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MT4C4259
36bit
175mW
512-cycle
MT4C4256DJ
MT1259EJ
MT4C4259EJ
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marking WMM
Abstract: RA52 1cas5 22r29
Text: 1 MEG x 4 DRAM DRAM QUAD CAS PARITY, FAST PAGE MODE FEATURES • Four independent CAS controls, allowing individual m anipulation to each of the four data In p u t/O u tp u t ports DQ1 through DQ4 . • Offers a single chip solution to byte level parity for 36bit w ords w hen using 1 Meg x 4 DRAMs for mem ory
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225mW
1024-cycle
D01-4
T-46-23-17
MT4C4256DJ
MT4C4259EJ
marking WMM
RA52
1cas5
22r29
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Untitled
Abstract: No abstract text available
Text: MT10D25636 256K X 36, 512K x 18 DRAM MODULE M IC R O N DRAM MODULE 256K x 36, 512K x 18 FAST PAGE MODE FEATURES • • • p ackage H ig h -p erfo rm an ce, C M O S silico n -g a te process. S in g le 5 V ± 1 0 % p o w er sup p ly A ll d e v ice p in s a re fu lly T T L co m p atib le
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MT10D25636
72-Pin
10D25636M
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MT1805
Abstract: No abstract text available
Text: M IC R O N 512K DRAM MODULE 512K X X MT18D51236 36 DRAM MODULE 36 DRAM FAST PAGE MODE FEATURES PIN ASSIGNMENT (Top View OPTIONS 72-Pin SIMM (T-12) MT18D51236M/G MARKING • T im ing 60ns access 70ns access 80ns access P ackages L ead less 7 2 -p in SIM M
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MT18D51236
72-pin
512-cycle
MT18D51236M/G
MT18051236
MT1805
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Untitled
Abstract: No abstract text available
Text: f ^ lC R O IN J 256K DRAM MODULE X MT9D25636 36 DRAM MODULE 256K x 36 DRAM FAST PAGE MODE FEATURES • Common RAS control pinout in a 72-pin single-in-line package • High-performance, CMOS silicon-gate process • Single 5V ±10% power supply • All device pins are fully TTL compatible
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MT9D25636
72-pin
575mW
512-cycle
10ations
MT9025636
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Untitled
Abstract: No abstract text available
Text: MICRON TECHNOLOGY INC 3ÖE D blllSMI G0DS1Ö1 I B M R N rm rr l*V vw*1-* V 1, g i f t innViliMfrfr^n i 1 MEG x 4 DRAM DRAM QUAD CAS PARITY, FAST PAGE MODE FEATURES Four independent CAS controls, allowing individual manipulation to each of the four data Input/O utput
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36bit
225mW
1024-cycle
MT4C4256DJ
T4C4259EJ
MT4C4259EJ
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simm 72pin
Abstract: No abstract text available
Text: | m i n P f*| \ | 512K DRAM MODULE MT20D51236 36, 1 MEG x 18 DRAM MODULE X 512K x 36,1 MEG x 18 FAST PAGE MODE FEATURES • Industry standard pinout in a 72-pin single-in-line package • High-performance, CMOS silicon-gate process. • Single 5V ±10% power supply
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MT20D51236
72-pin
780mW
512-cycle
MT20D51236M/G
simm 72pin
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Untitled
Abstract: No abstract text available
Text: M IC R O N • T 512K DRAM MODULE 36, 1 MEG X X MT20D51236 18 DRAM M ODULE 512K x 36,1 MEG x 18 FAST PAGE MODE FEATURES • Industry standard pinout in a 72-pin single-in-line package • High-performance, CM OS silicon-gate process. • Single 5V ±10% power supply
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MT20D51236
72-pin
512-cycle
MT200S1236
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Untitled
Abstract: No abstract text available
Text: MT9D25636 256K X 36 DRAM MODULE |V /|K = R O N 256K X 36 DRAM DRAM MODULE FAST PAGE MODE FEATURES OPTIONS MARKING • Timing 60ns access 70ns access 80ns access - 6 - 7 - 8 • Packages Leadless 72 -pin SIMM Leadless 72 -pin SIMM Gold 72-Pin SIMM (T" 11)
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MT9D25636
72-pin
512-cycle
T9D25636M
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Untitled
Abstract: No abstract text available
Text: M ir “ O n N I 256K DRAM MODULE X 36, 512K X MT10D25636 18 DRAM MODULE 256K x 36, 512K x 18 FAST PAGE MODE FEATURES PIN ASSIGNMENT Top View OPTIONS M T 10D25636M /G Itmmrrrm^ „ iïrmrrmrrrri^ ^ MARKING • Timing 60ns access 70ns access 80ns access -
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MT10D25636
72-pin
750mW
512-cycle
10D25636M
72echnology,
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