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    MT5C6406 Search Results

    MT5C6406 Datasheets (48)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    MT5C6406-12 Micron 16K x 4 SRAM WITH SEPARATE INPUTS AND OUTPUTS Scan PDF
    MT5C6406-12L Micron 16K x 4 SRAM WITH SEPARATE INPUTS AND OUTPUTS Scan PDF
    MT5C6406-15 Micron 16K x 4 SRAM WITH SEPARATE INPUTS AND OUTPUTS Scan PDF
    MT5C6406-15L Micron 16K x 4 SRAM WITH SEPARATE INPUTS AND OUTPUTS Scan PDF
    MT5C6406-20 Micron 16K x 4 SRAM WITH SEPARATE INPUTS AND OUTPUTS Scan PDF
    MT5C6406-20L Micron 16K x 4 SRAM WITH SEPARATE INPUTS AND OUTPUTS Scan PDF
    MT5C6406-25 Micron 16K x 4 SRAM WITH SEPARATE INPUTS AND OUTPUTS Scan PDF
    MT5C6406-25L Micron 16K x 4 SRAM WITH SEPARATE INPUTS AND OUTPUTS Scan PDF
    MT5C6406-30 Micron 16K x 4 SRAM WITH SEPARATE INPUTS AND OUTPUTS Scan PDF
    MT5C6406-30L Micron 16K x 4 SRAM WITH SEPARATE INPUTS AND OUTPUTS Scan PDF
    MT5C6406-35 Micron 16K x 4 SRAM WITH SEPARATE INPUTS AND OUTPUTS Scan PDF
    MT5C6406-35L Micron 16K x 4 SRAM WITH SEPARATE INPUTS AND OUTPUTS Scan PDF
    MT5C6406C-12 Micron 16K x 4 SRAM WITH SEPARATE INPUTS AND OUTPUTS Scan PDF
    MT5C6406C-12L Micron 16K x 4 SRAM WITH SEPARATE INPUTS AND OUTPUTS Scan PDF
    MT5C6406C-15 Micron 16K x 4 SRAM WITH SEPARATE INPUTS AND OUTPUTS Scan PDF
    MT5C6406C-15L Micron 16K x 4 SRAM WITH SEPARATE INPUTS AND OUTPUTS Scan PDF
    MT5C6406C-20 Micron 16K x 4 SRAM WITH SEPARATE INPUTS AND OUTPUTS Scan PDF
    MT5C6406C-20L Micron 16K x 4 SRAM WITH SEPARATE INPUTS AND OUTPUTS Scan PDF
    MT5C6406C-25 Micron 16K x 4 SRAM WITH SEPARATE INPUTS AND OUTPUTS Scan PDF
    MT5C6406C-25L Micron 16K x 4 SRAM WITH SEPARATE INPUTS AND OUTPUTS Scan PDF

    MT5C6406 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    A7 RFTA

    Abstract: No abstract text available
    Text: |U |IC R O IS J MT5C6406/7 SRAM 16K x 4 SRAM FEATURES • H igh speed: 8 ,1 0 ,1 2 ,1 5 ,2 0 ,2 5 and 35ns • H igh-perform ance, low -pow er, C M O S double-m etal process • Single +5V ±10% pow er supply • Easy m em ory expansion w ith CE1, CE2 and OE


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    MT5C6406/7 T5C6406 T5C6407 28-Pin 25nsDR MT5C6406-7 A7 RFTA PDF

    Q2173

    Abstract: a117b
    Text: MICRON I MT5C6406/7 TECMNOLOGY ISC 16K x 4 SRAM SRAM FEATURES PIN ASSIGNMENT Top View • High speed: 8 ,1 0 ,1 2 ,1 5 ,2 0 ,2 5 and 35ns • High-performance, low-power, CMOS double-metal process _ _ • Single+5V ±10% power supply • Easy memory expansion with CE1, CE2 and OE


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    MT5C6406/7 MT5C6406 MT5C6407 28-Pin MT5C6406/7 S1991. MTSC6406/7 Q2173 a117b PDF

    Untitled

    Abstract: No abstract text available
    Text: I^ IIC R O N MT5C6406/7 SRAM 16K X 4 SRAM WITH SEPARATE INPUTS AND OUTPUTS FEATURES PIN ASSIGNMENT Top View OPTIONS MARKING • Timing 12ns access 15ns access 20ns access 25ns access 30ns access 35ns access -12 -15 -20 -25 -30 -35 • Packages Plastic DIP (300 mil)


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    MT5C6406/7 28L/300 PDF

    Untitled

    Abstract: No abstract text available
    Text: A S l AUSTIN SEMICONDUCTOR, INC. SRAM 8K x 8 SRAM AVAILABLE AS MILITARY SPECIFICATIONS PIN ASSIGNMENT Top View) • SMD 5962-38294 • MIL-STD-883 High speed: 12,15, 20, 25 and 35ns Battery backup: 2V data retention High-performance, low-power, CMOS double-metal


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    MIL-STD-883 28-Pin MT5C6408 DS000026 T0D2117 PDF

    STATIC RAM 8464

    Abstract: IMS1433 SSM6116 IMS1630 SSM6171 SSM7188 hitachi selection guide SSM7164 hm6264 ic 6116 ram
    Text: 16K Product S e le c tio n -C ro s s Reference Guide 16K Static RAM — Product Selection Typical Power mW Maximum Speed (ns) Part No/'» L7C167 Description Packages Available121 Com. Mil. Oper. Inactive Pins 8 10 135 75 20 DIP, LCC SOIC (Gull-Wing) SOJ (J-Lead)


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    L7C167 L7C168 L7C170 L7C171 L7C172 L6116/ L6116L L7C183 CY7C183 L7C184 STATIC RAM 8464 IMS1433 SSM6116 IMS1630 SSM6171 SSM7188 hitachi selection guide SSM7164 hm6264 ic 6116 ram PDF

    Untitled

    Abstract: No abstract text available
    Text: I^ICRQN 8K SRAM MT5C6408 X 8 SRAM 8K X 8 SRAM PIN ASSIGNMENT Top View • H ig h sp eed : 9 , 1 0 ,1 2 , 1 5 , 20 an d 25n s • H ig h -p e rfo rm a n ce, lo w -p o w er, C M O S d o u b le-m eta l p ro cess • Sin g le + 5 V ± 1 0 % p o w er su p p ly _


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    MT5C6408 28-Pin MT5C6406 MT5C64OT PDF

    Untitled

    Abstract: No abstract text available
    Text: t& a. tâiuiiaÉdÉâtXaÉRiidtaM MICRON TECHNOLOGY INC f* 3flE ]> blllSM"] 0 0 0 5 Û G C1 ? Hf IR N n T ^ L - l l -iO . -'JJIJJf - • ■ < ¡hm-irMUfrr- ‘iff» ' ■ 16K x 4 SRAM SRAM W IT H S E P A R A TE IN P U T S A N D O U T P U T S FEATURES PIN ASSIGNMENT Top View


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    PDF

    Untitled

    Abstract: No abstract text available
    Text: A U S T I N S E M I C O N D U C T O R . INC. SRAM 8K x 8 SRAM AVAILABLE AS MILITARY SPECIFICATIONS PIN ASSIGNMENT Top View • SM D 5962-38294, Class M • M IL-STD -883, Class B • Radiation tolerant (consult factory) 28-Pin DIP FEATURES NC i 1» • High speed: 12,15, 20, 25 and 35ns


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    MT5C6408 28-Pin Easy08 MIL-STD-883 MT5C6446 12T94 PDF

    4HA5

    Abstract: No abstract text available
    Text: 8K X 8 SRAM SRAM AVAILABLE AS MILITARY SPECIFICATIONS PIN ASSIGNMENT Top View • SMD 5962-38294 • MIL-STD-883 28-Pin DIP (D-15) FEATURES • High speed: 12, 15, 20, 25 and 35ns • Battery backup: 2V data retention • High-performance, low-power, CMOS double-metal


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    MIL-STD-883 28-Pin MiL-STD-883 MT5C6406883C 4HA5 PDF

    t19l

    Abstract: mt5C6408
    Text: [M IC R O N MT5C6408 SRAM 8K X 8 SRAM • High speed: 8 ,1 0 ,1 2 , 15, 20, 25 and 35ns • H igh-perform ance, low -pow er, CM O S double-m etal process • Single +5V ±10% pow er supply • Easy m em ory expansion w ith CE1, CE2 and OE options • All inputs and outputs are TTL com patible


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    MT5C6408 28-Pin MT5C6406 t19l mt5C6408 PDF

    micron sram

    Abstract: M991
    Text: M IC R O N I M T5C 6406/7 TECHNOLOGY ISC 16K x 4 SRAM SRAM FEA TUR ES PIN ASSIGNMENT Top View • High speed: 8 ,1 0 ,1 2 ,1 5 , 20,25 and 35ns • High-performance, low-power, CM O S double-metal process • Single +5V ±10% pow er su pp ly _ _ • Easy m em ory expansion with CE1, CE2 and OE


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    MT5C6406/7 MT5C6406 MT5C6407 micron sram M991 PDF

    a5128

    Abstract: No abstract text available
    Text: 16K X 4 SRAM SRAM WITH SEPARATE INPUTS AND OUTPUTS FEATURES • High speed: 12,15, 20,25, 30 and 35ns • High-performance, low-power, CMOS double metal process • Single +5V ±10% power supply _ _ • Easy memory expansion with CE1, CE2 and OE options


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    MT5C6406/7 MT5C6406 MT5C6407 a5128 PDF

    Untitled

    Abstract: No abstract text available
    Text: AUSTIN SEMICONDUCTOR, INC. SRAM 8K MT59 6428JL8.3£ 8 K x 8 SRAM X 8 SRAM AVAILABLE AS MILITARY SPECIFICATIONS • SMD 5962-38294, Class M • MIL-STD-883, Class B • Radiation tolerant consult factory FEATURES • High speed: 12, 15, 20, 25 and 35ns • Battery backup: 2V data retention


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    MIL-STD-883, MIL-STD-883 0000S53 10change PDF

    Mil-Std-883 Wire Bond Pull Method 2011

    Abstract: T5C6408
    Text: M I CR ON T E C H N O L O G Y INC b l l l S H T O O D S Ô ? ^ T1S SS E D MICRON MRN M T5C6408 DIE 8K X 8 S R A M ^ r-a u -7 ^ -i7 MILITARY SRAM DIE 8K X 8 SRAM FEATURES DIE OUTLINE Top View OPTIONS 3 3 3 2 2 2 2 2 2 2 2 2 2 2 1 0 9 8 7 6 5 4 3 2 1 0 □□□□□□□□□□□□a


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    T5C6408 C1992, Mil-Std-883 Wire Bond Pull Method 2011 PDF