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    MTD3055V Search Results

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    MTD3055V Price and Stock

    onsemi MTD3055V

    MOSFET N-CH 60V 12A TO252-3
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    DigiKey MTD3055V Reel 2,500
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    Newark MTD3055V Cut Tape 5
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    Bristol Electronics MTD3055V 128
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    Rochester Electronics MTD3055V 1
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    onsemi MTD3055VL

    MOSFET N-CH 60V 12A TO252-3
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    DigiKey MTD3055VL Cut Tape 1
    • 1 $1.35
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    MTD3055VL Digi-Reel 1
    • 1 $1.35
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    MTD3055VL Reel 2,500
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    Bristol Electronics MTD3055VL 10
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    Chip-Germany GmbH MTD3055VL 4
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    Component Electronics, Inc MTD3055VL 1,044
    • 1 $2.31
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    • 100 $1.73
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    onsemi MTD3055VLT4

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    Bristol Electronics MTD3055VLT4 2,491
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    MTD3055VLT4 193
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    MTD3055VLT4 13 5
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    Quest Components MTD3055VLT4 154
    • 1 $2.15
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    MTD3055VLT4 100
    • 1 $1.74
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    MTD3055VLT4 74
    • 1 $1.6
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    MTD3055VLT4 25
    • 1 $1.25
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    MTD3055VLT4 10
    • 1 $1.5
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    ComSIT USA MTD3055VLT4 56,394
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    Win Source Electronics MTD3055VLT4 7,045
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    Motorola Semiconductor Products MTD3055VLT4

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    Bristol Electronics MTD3055VLT4 1,436
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    Quest Components MTD3055VLT4 120
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    MTD3055VLT4 15
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    Component Electronics, Inc MTD3055VLT4 220
    • 1 $3.85
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    Motorola Semiconductor Products MTD3055VL

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    Bristol Electronics MTD3055VL 1,345
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    Quest Components MTD3055VL 80
    • 1 $0.8
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    MTD3055VL 48
    • 1 $4
    • 10 $2.5
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    MTD3055VL 17
    • 1 $1.0869
    • 10 $0.9058
    • 100 $0.6521
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    MTD3055VL 4
    • 1 $1.365
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    ComSIT USA MTD3055VL 1,339
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    Find more MTD3055V price and stock on Findchips.com

    MTD3055V Datasheets (21)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    MTD3055V Fairchild Semiconductor N-Channel Enhancement Mode Field Effect Transistor Original PDF
    MTD3055V Fairchild Semiconductor N-Channel Enhancement Mode Field Effect Transistor Original PDF
    MTD3055V Motorola TMOS POWER FET 12 AMPERES 60 VOLTS RDS(on) = 0.15 OHM Original PDF
    MTD3055V On Semiconductor Power MOSFET 12 A, 60 V Original PDF
    MTD3055V Toshiba Power MOSFETs Cross Reference Guide Original PDF
    MTD3055V Motorola TMOS Power FET 12 Amp 60V Scan PDF
    MTD3055V On Semiconductor Over 600 obsolete distributor catalogs now available on the Datasheet Archive - Transistor, TMOS V, 60V, 6A, Pkg Style DPAK Scan PDF
    MTD3055V1 On Semiconductor Power MOSFET 12 A, 60 V Original PDF
    MTD3055V/D On Semiconductor TMOS POWER FET 12 AMPERES 60 VOLTS Original PDF
    MTD3055V-D On Semiconductor Power MOSFET 12 Amps, 60 Volts N-Channel DPAK Original PDF
    MTD3055VL Fairchild Semiconductor N-Channel Logic Level Enhancement Mode Field Effec Original PDF
    MTD3055VL Motorola TMOS POWER FET 12 AMPERES 60 VOLTS RDS(on) = 0.18 OHM Original PDF
    MTD3055VL On Semiconductor Power MOSFET 12 A, 60 V Original PDF
    MTD3055VL Toshiba Power MOSFETs Cross Reference Guide Original PDF
    MTD3055VL1 On Semiconductor Power MOSFET 12 A, 60 V Original PDF
    MTD3055VL/D On Semiconductor TMOS POWER FET 12 AMPERES 60 VOLTS Original PDF
    MTD3055VL-D On Semiconductor Power MOSFET 12 Amps, 60 Volts N-Channel DPAK Original PDF
    MTD3055VL_NL Fairchild Semiconductor N-Channel Logic Level Enhancement Mode Field Effect Transistor Original PDF
    MTD3055VLT4 On Semiconductor Power MOSFET 12 A, 60 V Original PDF
    MTD3055V_NL Fairchild Semiconductor N-Channel Enhancement Mode Field Effect Transitor Original PDF

    MTD3055V Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    3055V

    Abstract: MTD3055VT4 MTD3055V 369D AN569
    Text: MTD3055V Preferred Device Power MOSFET 12 Amps, 60 Volts N−Channel DPAK This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. Designed for low voltage, high speed switching applications in power supplies, converters and power


    Original     		PDF MTD3055V MTD3055V/D 3055V MTD3055VT4 MTD3055V 369D AN569

    t3055vl

    Abstract: T30-55VL 3055vl MTD3055VL1 3055V AN569 MTD3055VL MTD3055VLT4
    Text: MTD3055VL Preferred Device Power MOSFET 12 Amps, 60 Volts N–Channel DPAK This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. Designed for low voltage, high speed switching applications in power supplies, converters and power


    Original     		PDF MTD3055VL r14525 MTD3055VL/D t3055vl T30-55VL 3055vl MTD3055VL1 3055V AN569 MTD3055VL MTD3055VLT4

    MTD3055V

    Abstract: mosfet DPAK
    Text: MTD3055V Preferred Device Power MOSFET 12 Amps, 60 Volts N−Channel DPAK This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. Designed for low voltage, high speed switching applications in power supplies, converters and power


    Original     		PDF MTD3055V MTD3055V/D MTD3055V mosfet DPAK

    Mosfet FDD

    Abstract: CBVK741B019 F63TNR FDD6680 MTD3055V
    Text: MTD3055V N-Channel Enhancement Mode Field Effect Transistor General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.


    Original     		PDF MTD3055V Mosfet FDD CBVK741B019 F63TNR FDD6680 MTD3055V

    a9hv

    Abstract: MTD3055VL
    Text: MTD3055VL N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features This N-Channel Logic Level MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional


    Original     		PDF MTD3055VL a9hv MTD3055VL

    MTD3055V

    Abstract: fairchild mosfets
    Text: MTD3055V* N-Channel Enhancement Mode Field Effect Transistor General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.


    Original     		PDF MTD3055V* MTD3055V fairchild mosfets

    NDP602P

    Abstract: ADP3310-3
    Text: POWER MANAGEMENT: Linear Regulator Controllers Vcc Icc Icc in Sdown Ext Pass MOSFET Supply Input Voltage Volts mA mA Amps (Amps) to FET's ADM1052 12 ±6% ADM1051 12 ±6% 4 1 PHD055N03LT (1) MTD3055VL (1) +3.>3.6V 2.5 2.5 ±2.5 ±5mV 3>3.6V ±5mV 0.01>1A


    Original     		PDF PHD055N03LT MTD3055VL ADM1052 ADM1051 ADM1051A NDP602P ADP3310-3

    3055VL

    Abstract: a9hv transistor WT9 MTD3055VL u6 transistor AYRA
    Text: MTD3055VL N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features This N-Channel Logic Level MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional


    Original     		PDF MTD3055VL MTD3055VL O-252 3055VL a9hv transistor WT9 u6 transistor AYRA

    a7w 57

    Abstract: a7w transistor
    Text: MTD3055VL N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features • 12 A, 60 V. RDS ON = 0.18 Ω @ VGS = 5 V This N-Channel Logic Level MOSFET has been designed specifically to improve the overall efficiency of DC/DC


    Original     		PDF MTD3055VL a7w 57 a7w transistor

    3055V

    Abstract: paste AN569 MTD3055V MTD3055V1 MTD3055VT4 t3055v
    Text: MTD3055V Preferred Device Power MOSFET 12 Amps, 60 Volts N–Channel DPAK This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. Designed for low voltage, high speed switching applications in power supplies, converters and power


    Original     		PDF MTD3055V r14525 MTD3055V/D 3055V paste AN569 MTD3055V MTD3055V1 MTD3055VT4 t3055v

    013 transistor

    Abstract: MTD3055VL AN569 in Motorola Power Applications mtd3055vl motorola TMOS E-FET TMOS power FET AN569 SMD310
    Text: MOTOROLA Order this document by MTD3055VL/D SEMICONDUCTOR TECHNICAL DATA Designer's  Data Sheet MTD3055VL TMOS V Power Field Effect Transistor DPAK for Surface Mount Motorola Preferred Device TMOS POWER FET 12 AMPERES 60 VOLTS RDS on = 0.18 OHM N–Channel Enhancement–Mode Silicon Gate


    Original     		PDF MTD3055VL/D MTD3055VL MTD3055VL/D* 013 transistor MTD3055VL AN569 in Motorola Power Applications mtd3055vl motorola TMOS E-FET TMOS power FET AN569 SMD310

    a7w transistor

    Abstract: a7w 57 transistor a7w
    Text: MTD3055V* N-Channel Enhancement Mode Field Effect Transistor General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.


    Original     		PDF MTD3055V* a7w transistor a7w 57 transistor a7w

    3055VL

    Abstract: MTD3055VLT4 MTD3055VL
    Text: MTD3055VL Preferred Device Power MOSFET 12 Amps, 60 Volts N−Channel DPAK−3 This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. Designed for low voltage, high speed switching applications in power supplies, converters and power


    Original     		PDF MTD3055VL MTD3055VL/D 3055VL MTD3055VLT4 MTD3055VL

    TMOS E-FET

    Abstract: TMOS power FET AN569 MTD3055V SMD310
    Text: MOTOROLA Order this document by MTD3055V/D SEMICONDUCTOR TECHNICAL DATA Designer's  Data Sheet MTD3055V TMOS V Power Field Effect Transistor DPAK for Surface Mount Motorola Preferred Device TMOS POWER FET 12 AMPERES 60 VOLTS RDS on = 0.15 OHM N–Channel Enhancement–Mode Silicon Gate


    Original     		PDF MTD3055V/D MTD3055V MTD3055V/D* TMOS E-FET TMOS power FET AN569 MTD3055V SMD310

    Untitled

    Abstract: No abstract text available
    Text: MTD3055V* N-Channel Enhancement Mode Field Effect Transistor General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.


    Original     		PDF MTD3055V MTD3055V*

    t3055vl

    Abstract: 3055VL T30-55VL 418B-03 5M MARKING CODE DIODE SMC MTD3055VLT4
    Text: MTD3055VL Preferred Device Power MOSFET 12 Amps, 60 Volts N–Channel DPAK This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. Designed for low voltage, high speed switching applications in power supplies, converters and power


    Original     		PDF MTD3055VL t3055vl 3055VL T30-55VL 418B-03 5M MARKING CODE DIODE SMC MTD3055VLT4

    MC68B21CP

    Abstract: xcm916x1cth16 transistor marking code 12W SOT-23 sg379 MC68B54P XC68HC805P18CDW mc68b50cp MC2830 NE555N CHN NE555N
    Text: SG379/D REV 7 Semiconductor Products Sector NORTH AMERICA SALES AND DISTRIBUTION PRICE LIST THIS BOOK IS IN COMPUTER SORT PRODUCT CLASSIFICATION – Please see General Information Section 1.3 EFFECTIVE DATE: JANUARY 10, 1998 General Information 1 Cross References


    Original     		PDF SG379/D 1N965BRL ZEN15V 1N751AS 1N967BRL ZEN18V 1N751ASRL 1N968BRL ZEN20V MC68B21CP xcm916x1cth16 transistor marking code 12W SOT-23 sg379 MC68B54P XC68HC805P18CDW mc68b50cp MC2830 NE555N CHN NE555N

    bipolar capacitor 1000MF 100v

    Abstract: 20-PIN IRL3103D1S IRL3103S IRLR024 IRU3004 IRU3004CF IRU3004CW MPS2222A 108 R12 263
    Text: Data Sheet No. PD94140 IRU3004 5-BIT PROGRAMMABLE SYNCHRONOUS BUCK CONTROLLER IC WITH DUAL LDO CONTROLLER DESCRIPTION FEATURES Meets latest VRM 8.4 specification for PentiumIII Provides single chip solution for Vcore, GTL+ and clock supply On-Board DAC programs the output voltage from


    Original     		PDF PD94140 IRU3004 IRU3004 bipolar capacitor 1000MF 100v 20-PIN IRL3103D1S IRL3103S IRLR024 IRU3004CF IRU3004CW MPS2222A 108 R12 263

    4614 mosfet

    Abstract: MOTOROLA 3055V 3055VL
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet MTD3055VL TM O S V P o w er Field E ffe c t T ran sisto r DPAK fo r S u rfa ce M ount TMOS POWER FET 12 AMPERES 60 VOLTS R DS on = 0-18 OHM N-Channel Enhancement-Mode Silicon Gate T M O S V is a new te c h n o lo g y d e sig n e d to a ch ie ve an o n -re s is ta n ce a rea p ro d u ct a bo u t o n e -h a lf th a t of sta n d a rd M O S FE Ts. This


    OCR Scan     		PDF 0E-03 0E-02 0E-01 4614 mosfet MOTOROLA 3055V 3055VL

    mtd3055vl motorola

    Abstract: CI 4609 369A-13 AN569 MTD3055V MTD3055VL
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Designer’s Data Sheet MTD3055V TMOS V Power Field Effect Transistor DPAK for Surface Mount M otorola Preferred Device TMOS POWER FET 12 AMPERES 60 VOLTS RDS on = ° 1 5 OHM N-Channel Enhancement-Mode Silicon Gate


    OCR Scan     		PDF MTD3055VL mtd3055vl motorola CI 4609 369A-13 AN569 MTD3055V MTD3055VL

    MOTOROLA 3055V

    Abstract: 3055VL 3055V
    Text: MOTOROLA Order this document by MTD3055VL/D SEMICONDUCTOR TECHNICAL DATA Designer’s Data Sheet MTD3055VL TMOS V Power Field Effect Transistor DPAK for Surface Mount Motorola Preferred Device TMOS POWER FET 12 AMPERES 60 VOLTS RDS on = 0.18 OHM N-Channel Enhancement-Mode Silicon Gate


    OCR Scan     		PDF MTD3055VL/D MOTOROLA 3055V 3055VL 3055V

    3055vl

    Abstract: Motorola 3055vl 3055vl motorola
    Text: MOTOROLA Order this document by MTD3055VL/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet M TD 3055VL TMOS V Power Field Effect Transistor DPAK for S urface Mount N-Channel Enhancement-Mode Silicon Gate T M O S V is a new te ch n o lo g y d e sig ned to achieve an o n -re s is tan ce area pro du ct ab ou t o n e -h a lf tha t of stan dard M O SFETs. This


    OCR Scan     		PDF MTD3055VL/D 3055VL 3055vl Motorola 3055vl 3055vl motorola

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA D e s ig n e r ’s Data S heet MTD3055V TMOS V Power Field Effect Transistor DPAK for Surface Mount M o t o r o la P re fe rre d D e v ic e TMOS POWER FET 12 AMPERES 60 VOLTS N-Channel Enhancement-Mode Silicon Gate


    OCR Scan     		PDF 0E-05 0E-04 0E-01

    MOTOROLA 3055V

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MTD3055V/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet M TD3055V TMOS V Power Field Effect Transistor DPAK for S urface Mount Motorola Preferred Device TM OS POWER FET 12 AMPERES 60 VOLTS N-Channel Enhancement-Mode Silicon Gate


    OCR Scan     		PDF MTD3055V/D TD3055V MOTOROLA 3055V