MTM13127 Search Results

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Panasonic Electronic Components MTM131270BBF MOSFET P-CH 20V 2A MINI3-G3-B
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	MTM131270BBF	Reel				1 - 10 - 100 - 1000 - 10000 -	Buy Now
Avnet Americas	MTM131270BBF	Reel			3,000	1 - 10 - 100 - 1000 - 10000 $0.08875	Buy Now

MTM13127 Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
MTM131270BBF		Panasonic	FETs - Single, Discrete Semiconductor Products, MOSF PCH 20V 2A SOT23		Original	PDF

MTM13127 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
mtm13127 Abstract: No abstract text available Text: This product complies with the RoHS Directive EU 2002/95/EC . MTM13127 Silicon P-channel MOS FET For DC-DC converter circuits For swiching circuits • Overview  Package MTM13127 is the P-channel MOS FET that is highly suitable ofr DC-DC converter and other switching circuits.	Original	2002/95/EC) MTM13127 MTM13127 MTM131270BBF	PDF
MTM131270BBF Abstract: No abstract text available Text: Doc No. TT4-EA-13636 Revision. 2 Product Standards MOS FET MTM131270BBF MTM131270BBF Silicon P-channel MOSFET Unit: mm For Switching 2.9 0.4 0.16 3  Low Drain-source On-state Resistance : RDS on typ = 92 m  (VGS = -4 V)  Low Drive Voltage : 1.8 V Drive	Original	TT4-EA-13636 MTM131270BBF UL-94 MTM131270BBF	PDF
mtm861270 Abstract: MTM86127 mtm13127 Text: Doc No. TT4-EA-10304 Revision. 2 Product Standards MOS FET MTM861270LBF MTM861270LBF Silicon P-channel MOSFET Unit : mm For Switching 1.6 0.2 MTM13127 in WSSMini6 type package 0.13 6 5 4 1 2 3 • Features  Marking Symbol : MK 1.4 1.6  Low Drain-source On-state Resistance : RDS on typ = 80 m  (VGS = -4 V)	Original	TT4-EA-10304 MTM861270LBF MTM13127 UL-94 mtm861270 MTM86127	PDF
Untitled Abstract: No abstract text available Text: Doc No. TT4-EA-13636 Revision. 3 Product Standards MOS FET MTM131270BBF MTM131270BBF Silicon P-channel MOS FET Unit : mm For switching 2.9 0.4 • Features 0.16  Low Drain-source On-state Resistance : RDS on typ = 92 m  (VGS = -4.0 V)  Low drive voltage: 1.8 V drive	Original	TT4-EA-13636 MTM131270BBF UL-94	PDF
Untitled Abstract: No abstract text available Text: Doc No. TT4-EA-13636 Revision. 4 Product Standards MOS FET MTM131270BBF MTM131270BBF Silicon P-channel MOS FET Unit : mm For switching 2.9 0.4 • Features 0.16  Low Drain-source On-state Resistance : RDS on typ = 92 m  (VGS = -4.0 V)  Low drive voltage: 1.8 V drive	Original	TT4-EA-13636 MTM131270BBF UL-94	PDF
MN864779 Abstract: MN88472 AN12947a MN6627553 MIP3E3SMY AN22004A mip2E2dmy MIP2F2* replacement MIP2E7DMY MIP3E50MY Text: 2013 Semiconductor Selection Guide How to Read This Document Structure of this document This document consists of the part number list, application block diagrams, and recommended types by classification. Types are classified according to the ECALS glossary.	Original	A000021E MN864779 MN88472 AN12947a MN6627553 MIP3E3SMY AN22004A mip2E2dmy MIP2F2* replacement MIP2E7DMY MIP3E50MY	PDF