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Motorola Semiconductor Products MTV20N50E POWER FIELD-EFFECT TRANSISTOR, 20A I(D), 500V, 0.24OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET
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MTV20N50E Datasheets (5)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
MTV20N50E		Motorola	TMOS POWER FET 20 AMPERES 500 VOLTS RDS(on) = 0.240 OHM		Original	PDF
MTV20N50E		Toshiba	Power MOSFETs Cross Reference Guide		Original	PDF
MTV20N50E/D		On Semiconductor	TMOS POWER FET 20 AMPERES 500 VOLTS		Original	PDF
MTV20N50E-D		On Semiconductor	TMOS E-FET Power Field Effect Transistor D3PAK for		Original	PDF
MTV20N50E-RL		On Semiconductor	TMOS E-FET Power Field Effect Transistor D3PAK for Surface Mount		Original	PDF

MTV20N50E Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
transistor mj 1504 Abstract: AN569 MTV20N50E SMD310 mj 1504 transistor mj 1504 scheme Text: MOTOROLA Order this document by MTV20N50E/D SEMICONDUCTOR TECHNICAL DATA  Data Sheet TMOS E-FET. Power Field Effect Transistor D3PAK for Surface Mount Designer's MTV20N50E TMOS POWER FET 20 AMPERES 500 VOLTS RDS on = 0.240 OHM N–Channel Enhancement–Mode Silicon Gate	Original	MTV20N50E/D MTV20N50E MTV20N50E/D* transistor mj 1504 AN569 MTV20N50E SMD310 mj 1504 transistor mj 1504 scheme	PDF
Untitled Abstract: No abstract text available Text: MTV20N50E Designer’s Data Sheet TMOS E−FET.™ Power Field Effect Transistor D3PAK for Surface Mount N−Channel Enhancement−Mode Silicon Gate The D3PAK package has the capability of housing the largest chip size of any standard, plastic, surface mount power semiconductor. This	Original	MTV20N50E MTV20N50E/D	PDF
MC68B21CP Abstract: xcm916x1cth16 transistor marking code 12W SOT-23 sg379 MC68B54P XC68HC805P18CDW mc68b50cp MC2830 NE555N CHN NE555N Text: SG379/D REV 7 Semiconductor Products Sector NORTH AMERICA SALES AND DISTRIBUTION PRICE LIST THIS BOOK IS IN COMPUTER SORT PRODUCT CLASSIFICATION – Please see General Information Section 1.3 EFFECTIVE DATE: JANUARY 10, 1998 General Information 1 Cross References	Original	SG379/D 1N965BRL ZEN15V 1N751AS 1N967BRL ZEN18V 1N751ASRL 1N968BRL ZEN20V MC68B21CP xcm916x1cth16 transistor marking code 12W SOT-23 sg379 MC68B54P XC68HC805P18CDW mc68b50cp MC2830 NE555N CHN NE555N	PDF
transistor mosfet buv18a Abstract: M143206EVK MMBF4856 lm358 IC 68hc05sc24 telephone line interface circuit bc517 MC68B54 XC68HC705P9 MPX100ap BUV18A Text: Device Index and Subject Index In Brief . . . Page Device Index . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.1–1 General Index . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.2–1 Subject Index . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.2–9	Original		PDF
mgb20n40cl Abstract: MGB20N40 MGB20N35CL MTD1N60E1 motorola automotive transistor coil ignition MTSF3N03HD MGW12N120 Motorola Master Selection Guide MTD20N06HD MTD20N06V Text: TMOS Power MOSFETs Products In Brief . . . Motorola continues to build a world class portfolio of TMOS Power MOSFETs with new advances in silicon and packaging technology. The following new advances have been made in the area of silicon technology. • New high voltage devices with voltages up to	Original	smalles40F MGP5N60E MGP20N60 MGW20N60D MGW30N60 MGY30N60D MGY40N60 MGY40N60D MGW12N120 MGW12N120D mgb20n40cl MGB20N40 MGB20N35CL MTD1N60E1 motorola automotive transistor coil ignition MTSF3N03HD MGW12N120 Motorola Master Selection Guide MTD20N06HD MTD20N06V	PDF
YTA630 Abstract: MTW14P20 BSS125 MTAJ30N06HD 2SK2837 equivalent SMU10P05 SMP60N06 replacement STE180N10 RFH75N05E IRFD620 Text: Power MOSFETs Cross Reference Alphanumerically Part Number VDSS V RDS(ON) (ohm) ID (A) PD (W) Package 2N7000 2N7002 2SJ377 2SJ378 2SJ380 2SJ401 2SJ402 2SJ407 2SJ412 2SJ419 2SJ420 2SJ421 2SJ438 2SJ439 2SJ464 2SJ465 2SJ468 2SJ469 2SJ482 2SJ507 2SJ508 2SJ509	Original	2N7000 2N7002 2SJ377 2SJ378 2SJ380 2SJ401 2SJ402 2SJ407 2SJ412 2SJ419 YTA630 MTW14P20 BSS125 MTAJ30N06HD 2SK2837 equivalent SMU10P05 SMP60N06 replacement STE180N10 RFH75N05E IRFD620	PDF
mgb20n40cl Abstract: 340G TO-220AB footprint Motorola Master Selection Guide MGP20N60 MMSF4P01HDR1 MTD20N06HD MTD20N06HDL MTD20P06HDL MTP75N06HD Text: TMOS Power MOSFETs Products In Brief . . . Motorola continues to build a world class portfolio of TMOS Power MOSFETs with new advances in silicon and packaging technology. The following new advances have been made in the area of silicon technology. • New high voltage devices with voltages up to	Original	smalles40F MGP5N60E MGP20N60 MGW20N60D MGW30N60 MGY30N60D MGY40N60 MGY40N60D MGW12N120 MGW12N120D mgb20n40cl 340G TO-220AB footprint Motorola Master Selection Guide MGP20N60 MMSF4P01HDR1 MTD20N06HD MTD20N06HDL MTD20P06HDL MTP75N06HD	PDF
mgb20n40cl Abstract: MOTOROLA 136 DPAK MPIC2112DW MPIC2131FN mtd1p50e MPIC2151D MTP75N06 MMDF4N02 MTB3N120E mc6530 Text: Example of exceptions: MTD/MTP3055E Example of exceptions: MTD/MTP2955E CHANNEL POLARITY, N OR P VOLTAGE RATING DIVIDED BY 10 OPTIONAL SUFFIX: L FOR LOGIC LEVEL E FOR ENERGY RATED T4 FOR TAPE & REEL DPAK/D2PAK RL FOR TAPE & REEL (DPAK/D3PAK) HD FOR HIGH CELL DENSITY	Original	MTD/MTP3055E MTD/MTP2955E MTP75N06HD O-220 O-220 O-247 O-264 OT-227B MMSF4P01HDR1 SG265/D mgb20n40cl MOTOROLA 136 DPAK MPIC2112DW MPIC2131FN mtd1p50e MPIC2151D MTP75N06 MMDF4N02 MTB3N120E mc6530	PDF
Untitled Abstract: No abstract text available Text: MOTOROLA Order this document by MTV20N50E/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet M TV20N 50E TMOS E-FET™ Power Field Effect Transistor D3PAK for Surface Mount TMOS POWER FET 20 AMPERES 500 VOLTS N-Channel Enhancement-Mode Silicon Gate	OCR Scan	MTV20N50E/D TV20N	PDF
c 4977 transistor Abstract: transistor on 4977 mosfet 452 JSs 97 diode Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Designer's Data Sheet TMOS E-FET ™ Power Field Effect Transistor D3PAK for Surface Mount MTV20N50E TMOS POWER FET 20 AMPERES 500 VOLTS RDS on = 0.240 OHM N-Channel Enhancement-Mode Silicon Gate The D^PAK package has the capability of housing the largest chip	OCR Scan	MTV20N50E c 4977 transistor transistor on 4977 mosfet 452 JSs 97 diode	PDF
hall marking code A04 Abstract: M143206EVK differences uc3842a uc3842b toshiba satellite laptop battery pinout 2N3773 audio amplifier diagram toshiba laptop battery pack pinout BC413 motorola transistor sj 5812 M68HC705X16 ABB inverter motor fault code Text: Introduction Advanced Digital r i Consumer Products L-l Microcomputer Components [2 Logic: Standard, Special p , and Programmable I-5* Analog and Interface Integrated Circuits Semiconductor r= Components Group L5 Product Literature and r~ Technical Training L”	OCR Scan	2PHX14226-31 hall marking code A04 M143206EVK differences uc3842a uc3842b toshiba satellite laptop battery pinout 2N3773 audio amplifier diagram toshiba laptop battery pack pinout BC413 motorola transistor sj 5812 M68HC705X16 ABB inverter motor fault code	PDF