MTY16N80E Search Results

MTY16N80E Datasheets (4)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
MTY16N80E		Motorola	TMOS E-FET Power Field Effect Transistor		Original	PDF
MTY16N80E		Toshiba	Power MOSFETs Cross Reference Guide		Original	PDF
MTY16N80E/D		On Semiconductor	TMOS POWER FET 16 AMPERES 800 VOLTS		Original	PDF
MTY16N80E-D		On Semiconductor	TMOS E-FET Power Field Effect Transistor		Original	PDF

MTY16N80E Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
Untitled Abstract: No abstract text available Text: MTY16N80E Designer’s Data Sheet TMOS E−FET.™ Power Field Effect Transistor N−Channel Enhancement−Mode Silicon Gate This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage−blocking capability without degrading	Original	MTY16N80E MTY16N80E/D	PDF
AN569 Abstract: MTY16N80E Text: MOTOROLA Order this document by MTY16N80E/D SEMICONDUCTOR TECHNICAL DATA  Data Sheet TMOS E-FET. Power Field Effect Transistor Designer's MTY16N80E Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate TMOS POWER FET 16 AMPERES 800 VOLTS	Original	MTY16N80E/D MTY16N80E MTY16N80E/D* AN569 MTY16N80E	PDF
YTA630 Abstract: MTW14P20 BSS125 MTAJ30N06HD 2SK2837 equivalent SMU10P05 SMP60N06 replacement STE180N10 RFH75N05E IRFD620 Text: Power MOSFETs Cross Reference Alphanumerically Part Number VDSS V RDS(ON) (ohm) ID (A) PD (W) Package 2N7000 2N7002 2SJ377 2SJ378 2SJ380 2SJ401 2SJ402 2SJ407 2SJ412 2SJ419 2SJ420 2SJ421 2SJ438 2SJ439 2SJ464 2SJ465 2SJ468 2SJ469 2SJ482 2SJ507 2SJ508 2SJ509	Original	2N7000 2N7002 2SJ377 2SJ378 2SJ380 2SJ401 2SJ402 2SJ407 2SJ412 2SJ419 YTA630 MTW14P20 BSS125 MTAJ30N06HD 2SK2837 equivalent SMU10P05 SMP60N06 replacement STE180N10 RFH75N05E IRFD620	PDF
Untitled Abstract: No abstract text available Text: MOTOROLA Order this document by MTY16N80E/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet M T Y 16N 8 0 E TMOS E-FET™ Power Field Effect Transistor Motorola Preferred Device N-Channel Enhancement-Mode Silicon Gate T his high vo lta g e M O S F E T uses an adva n ce d te rm in a tio n	OCR Scan	MTY16N80E/D 340G-02 O-264	PDF
TIC 122 Transistor Abstract: TY16N80E TY16N y16n Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet M TY16N 80E TM O S E -F E T ™ P o w er Field E ffe c t T ran sisto r M otorola Preferred Device N-Channel Enhancement-Mode Silicon Ga te TMOS POWER FET 16 AMPERES 800 VOLTS This high volta ge M O S FET uses an advanced term inatio n	OCR Scan		PDF