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    MULTICOMP CAPACITORS AXIAL Search Results

    MULTICOMP CAPACITORS AXIAL Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    NFM15PC755R0G3D Murata Manufacturing Co Ltd Feed Through Capacitor, Visit Murata Manufacturing Co Ltd
    NFM15PC435R0G3D Murata Manufacturing Co Ltd Feed Through Capacitor, Visit Murata Manufacturing Co Ltd
    NFM15PC915R0G3D Murata Manufacturing Co Ltd Feed Through Capacitor, Visit Murata Manufacturing Co Ltd
    DE6B3KJ151KA4BE01J Murata Manufacturing Co Ltd Safety Standard Certified Lead Type Disc Ceramic Capacitors for Automotive Visit Murata Manufacturing Co Ltd
    DE6B3KJ471KB4BE01J Murata Manufacturing Co Ltd Safety Standard Certified Lead Type Disc Ceramic Capacitors for Automotive Visit Murata Manufacturing Co Ltd

    MULTICOMP CAPACITORS AXIAL Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    ht 1628

    Abstract: HT221M1AB-0813 Multicomp capacitors ht 2810 HT101M2AB-1322 HT222M1CB-1324 HT221M1VB-1017 HT470M1VB-6 HT222M1JB-2042 MULTICOMP capacitors axial
    Text: REVISIONS PART NO. HT Series ECN # REV DESCRIPTION DRAWN - A RELEASED S. R DATE 8/5/06 CHECKD K. S DATE APPRVD DATE N. K 22/5/06 8/5/06 Features: • Excellent temperature performance. • Suitable to use for industrial equipment. • General purpose 105°C.


    Original     		PDF M10000227 ht 1628 HT221M1AB-0813 Multicomp capacitors ht 2810 HT101M2AB-1322 HT222M1CB-1324 HT221M1VB-1017 HT470M1VB-6 HT222M1JB-2042 MULTICOMP capacitors axial

    LV220M1EB-0513

    Abstract: LV222M1JB-2042 LV102M1CB-1021 Multicomp capacitors
    Text: REVISIONS PART NO. LV Series ECN # REV DESCRIPTION DRAWN - A RELEASED S. R DATE 8/5/06 CHECKD K. S DATE 8/5/06 APPRVD DATE N. K 22/5/06 Features: • Low Impedance characteristics. • Case sizes are smaller than conventional generalpurpose capacitors, with very high performance.


    Original     		PDF M10000226 LV220M1EB-0513 LV222M1JB-2042 LV102M1CB-1021 Multicomp capacitors

    HV220M2EB-1326

    Abstract: HV010 MULTICOMP capacitors axial HV220M2EB-1326E Multicomp capacitors HV100M2EB-1021 HV4R7M2WB-1026 HV220M2WB-1632
    Text: REVISIONS PART NO. HV Series ECN # REV DESCRIPTION DRAWN - A RELEASED S. R DATE 8/5/06 CHECKD K. S DATE 8/5/06 APPRVD DATE N. K 22/5/06 Features: • Low Impedance characteristics. • Case sizes are smaller than conventional general-purpose capacitors, with


    Original     		PDF M10000225 HV220M2EB-1326 HV010 MULTICOMP capacitors axial HV220M2EB-1326E Multicomp capacitors HV100M2EB-1021 HV4R7M2WB-1026 HV220M2WB-1632

    TUI-lf-9

    Abstract: ATC700B392JT50X
    Text: Document Number: MMRF1016H Rev. 0, 7/2014 Freescale Semiconductor Technical Data RF Power LDMOS Transistor N-Channel Enhancement-Mode Lateral MOSFET MMRF1016HR5 This 600 W RF power LDMOS transistor is designed primarily for wideband RF power amplifiers with frequencies up to 500 MHz. This device is unmatched


    Original     		PDF MMRF1016H MMRF1016HR5 7/2014Semiconductor, TUI-lf-9 ATC700B392JT50X

    l 913

    Abstract: 913-730 913-560 MULTICOMP capacitors axial 913-820 913546
    Text: ECA 2 Series High Temp. Electrolytic Capacitors Features: • Axial leaded electrolytic. • Wide operating temperature range, from -40°C to +105°C. • Excellent temperature performance. • Suitable to use for industrial equipment. • Lead Length = 30m.


    Original     		PDF 120Hz) l 913 913-730 913-560 MULTICOMP capacitors axial 913-820 913546

    G2225X7R225KT3AB

    Abstract: MRF6VP2600KH TUI-lf-9 UT-141C-25 DVB-T Schematic tuo-4 MRF6VP2600H AN1955 ATC100B470JT500XT MRF6VP2600HR6
    Text: Freescale Semiconductor Technical Data Document Number: MRF6VP2600H Rev. 5, 5/2010 RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET Designed primarily for wideband applications with frequencies up to 500 MHz. Device is unmatched and is suitable for use in broadcast applications.


    Original     		PDF MRF6VP2600H MRF6VP2600HR6 G2225X7R225KT3AB MRF6VP2600KH TUI-lf-9 UT-141C-25 DVB-T Schematic tuo-4 MRF6VP2600H AN1955 ATC100B470JT500XT MRF6VP2600HR6

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF6VP2600H Rev. 5.1, 7/2010 RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET Designed primarily for wideband applications with frequencies up to 500 MHz. Device is unmatched and is suitable for use in broadcast applications.


    Original     		PDF MRF6VP2600H MRF6VP2600HR6

    MRF6VP2600KH

    Abstract: TUI-lf-9 MRF6VP2600H ATC700B392JT50X ATC100B221 transistor j380 88-108 88-108 rf amplifier UT-141C-25 5093nw
    Text: Freescale Semiconductor Technical Data Document Number: MRF6VP2600H Rev. 5.1, 7/2010 RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET Designed primarily for wideband applications with frequencies up to 500 MHz. Device is unmatched and is suitable for use in broadcast applications.


    Original     		PDF MRF6VP2600H 20ficers, MRF6VP2600HR6 MRF6VP2600KH TUI-lf-9 MRF6VP2600H ATC700B392JT50X ATC100B221 transistor j380 88-108 88-108 rf amplifier UT-141C-25 5093nw

    MRF6VP2600H

    Abstract: ATC100B101JT500XT DVB-T Schematic 88-108 an power 88-108 mhz MRF6VP2600HR6 ferrite transformer 0.14 ratio push pull transformer calculator ATC200B103KT50XT Tantalum chip Capacitor 226 20k
    Text: Freescale Semiconductor Technical Data Document Number: MRF6VP2600H Rev. 4.1, 6/2009 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF6VP2600HR6 Designed primarily for wideband applications with frequencies up to 250 MHz. Device is unmatched and is suitable for use in broadcast applications.


    Original     		PDF MRF6VP2600H MRF6VP2600HR6 100fficers, MRF6VP2600H ATC100B101JT500XT DVB-T Schematic 88-108 an power 88-108 mhz MRF6VP2600HR6 ferrite transformer 0.14 ratio push pull transformer calculator ATC200B103KT50XT Tantalum chip Capacitor 226 20k

    D260-4118-0000

    Abstract: MRFE6VS25L MRFE6VS25GNR1 transistor J128 2422D 21-201-J ATC100B2R7BT500XT crcw12065k60f avx c0805c103k5rac MRFE6VS25NR1
    Text: Freescale Semiconductor Technical Data Document Number: MRFE6VS25N Rev. 1, 12/2012 RF Power LDMOS Transistors High Ruggedness N-Channel Enhancement-Mode Lateral MOSFETs RF power transistors designed for both narrowband and broadband ISM, broadcast and aerospace applications operating at frequencies from 1.8 to


    Original     		PDF MRFE6VS25N MRFE6VS25NR1 MRFE6VS25GNR1 MRFE6VS25N D260-4118-0000 MRFE6VS25L MRFE6VS25GNR1 transistor J128 2422D 21-201-J ATC100B2R7BT500XT crcw12065k60f avx c0805c103k5rac

    mosfet mttf

    Abstract: MRF6VP11KH MRF6VP11KHR6 tuo-4 AN1955 T491X226K035AT capacitor mttf FAIR-RITE 2743021447 EKME MCCFR
    Text: Freescale Semiconductor Technical Data Document Number: MRF6VP11KH Rev. 7, 4/2010 RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET MRF6VP11KHR6 Designed primarily for pulsed wideband applications with frequencies up to 150 MHz. Device is unmatched and is suitable for use in industrial, medical


    Original     		PDF MRF6VP11KH MRF6VP11KHR6 mosfet mttf MRF6VP11KH MRF6VP11KHR6 tuo-4 AN1955 T491X226K035AT capacitor mttf FAIR-RITE 2743021447 EKME MCCFR

    250GX-0300-55-22

    Abstract: CPF320R000FKE14 MRF6VP11KH 1812SMS-82NJLC ATC200B103KT50X ATC100B101JT500XT AN1955 JESD22-A114 MRF6VP11KHR6 T491X226K035AT
    Text: Document Number: MRF6VP11KH Rev. 6, 12/2009 Freescale Semiconductor Technical Data RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET MRF6VP11KHR6 Designed primarily for pulsed wideband applications with frequencies up to 150 MHz. Device is unmatched and is suitable for use in industrial, medical


    Original     		PDF MRF6VP11KH MRF6VP11KHR6 250GX-0300-55-22 CPF320R000FKE14 MRF6VP11KH 1812SMS-82NJLC ATC200B103KT50X ATC100B101JT500XT AN1955 JESD22-A114 MRF6VP11KHR6 T491X226K035AT

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF6VP11KH Rev. 7, 4/2010 RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET MRF6VP11KHR6 Designed primarily for pulsed wideband applications with frequencies up to 150 MHz. Device is unmatched and is suitable for use in industrial, medical


    Original     		PDF MRF6VP11KH MRF6VP11KHR6

    mccfr0w4j

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF6VP11KH Rev. 5, 7/2009 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF6VP11KHR6 Designed primarily for pulsed wideband applications with frequencies up to 150 MHz. Device is unmatched and is suitable for use in industrial, medical


    Original     		PDF MRF6VP11KH MRF6VP11KHR6 mccfr0w4j

    ATC100B151J

    Abstract: ATC100B101JT500XT G2225X7R225KT3AB ATC100B151JT500XT
    Text: Freescale Semiconductor ‘Technical Data Document Number: MRF6VP2600H Rev. 0, 3/2008 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF6VP2600HR6 Designed primarily for wideband applications with frequencies up to 250 MHz.


    Original     		PDF MRF6VP2600H MRF6VP2600HR6 MRF6VP2600H ATC100B151J ATC100B101JT500XT G2225X7R225KT3AB ATC100B151JT500XT

    MRF6VP2600H

    Abstract: T1Z20 transformer calculator j185 an power 88-108 mhz MOSFET IRL A114 A115 5093NW20R00J ATC100B470JT500XT
    Text: Freescale Semiconductor ‘Technical Data Document Number: MRF6VP2600H Rev. 1, 7/2008 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF6VP2600HR6 Designed primarily for wideband applications with frequencies up to 250 MHz.


    Original     		PDF MRF6VP2600H MRF6VP2600HR6 MRF6VP2600H T1Z20 transformer calculator j185 an power 88-108 mhz MOSFET IRL A114 A115 5093NW20R00J ATC100B470JT500XT

    mrf6vp2600h

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF6VP2600H Rev. 2.1, 11/2008 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF6VP2600HR6 Designed primarily for wideband applications with frequencies up to 250 MHz.


    Original     		PDF MRF6VP2600H MRF6VP2600HR6 MRF6VP2600H

    913315

    Abstract: MULTICOMP capacitors axial 913110
    Text: ECA 1 Series General Purpose Capacitors Features: • Low impedance characteristics. • Case sizes are smaller than conventional general-purpose capacitors, with very high performance. • Case sizes larger than 8mm diameter have a safety vent on the rubber bung.


    Original     		PDF 120Hz) 913315 MULTICOMP capacitors axial 913110

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF6VP21KH Rev. 4, 4/2010 RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET MRF6VP21KHR6 Designed primarily for pulsed wideband applications with frequencies up to 235 MHz. Device is unmatched and is suitable for use in industrial, medical


    Original     		PDF MRF6VP21KH MRF6VP21KHR6

    C15B1

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF6VP11KH Rev. 3, 9/2008 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF6VP11KHR6 Designed primarily for pulsed wideband applications with frequencies up to 150 MHz. Device is unmatched and is suitable for use in industrial, medical


    Original     		PDF MRF6VP11KH MRF6VP11KHR6 C15B1

    A114

    Abstract: A115 AN1955 C101 JESD22 MRF6VP21KHR6 capacitor mttf TRANSISTOR J406
    Text: Freescale Semiconductor Technical Data Document Number: MRF6VP21KH Rev. 2, 9/2008 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF6VP21KHR6 Designed primarily for pulsed wideband applications with frequencies up to 235 MHz. Device is unmatched and is suitable for use in industrial, medical


    Original     		PDF MRF6VP21KH MRF6VP21KHR6 A114 A115 AN1955 C101 JESD22 MRF6VP21KHR6 capacitor mttf TRANSISTOR J406

    MRF6VP11KH

    Abstract: ATC100B180JT500X ATC100B101JT500XT MRF6VP11KHR6 A114 A115 AN1955 C101 JESD22 CPF320R000FKE14
    Text: Freescale Semiconductor Technical Data Document Number: MRF6VP11KH Rev. 1, 4/2008 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF6VP11KHR6 Designed primarily for pulsed wideband applications with frequencies up to 150 MHz. Device is unmatched and is suitable for use in industrial, medical


    Original     		PDF MRF6VP11KH MRF6VP11KHR6 MRF6VP11KH ATC100B180JT500X ATC100B101JT500XT MRF6VP11KHR6 A114 A115 AN1955 C101 JESD22 CPF320R000FKE14

    A03TK

    Abstract: TRANSISTOR J406 A114 A115 AN1955 C101 JESD22 MRF6VP21KHR6 A03TKLC C2227
    Text: Freescale Semiconductor Technical Data Document Number: MRF6VP21KH Rev. 1, 4/2008 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF6VP21KHR6 Designed primarily for pulsed wideband applications with frequencies up to 235 MHz. Device is unmatched and is suitable for use in industrial, medical


    Original     		PDF MRF6VP21KH MRF6VP21KHR6 A03TK TRANSISTOR J406 A114 A115 AN1955 C101 JESD22 MRF6VP21KHR6 A03TKLC C2227

    Tantalum Capacitor kemet

    Abstract: 1000 watts power amp circuit diagram 1000 watts ups circuit diagram Amp. mosfet 1000 watt AN1955 CPF320R000FKE14 tuo-4 Illinois Capacitor MRF6VP21KHR6 rf push pull mosfet power amplifier
    Text: Freescale Semiconductor Technical Data Document Number: MRF6VP21KH Rev. 3, 12/2008 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF6VP21KHR6 Designed primarily for pulsed wideband applications with frequencies up to 235 MHz. Device is unmatched and is suitable for use in industrial, medical


    Original     		PDF MRF6VP21KH MRF6VP21KHR6 Tantalum Capacitor kemet 1000 watts power amp circuit diagram 1000 watts ups circuit diagram Amp. mosfet 1000 watt AN1955 CPF320R000FKE14 tuo-4 Illinois Capacitor MRF6VP21KHR6 rf push pull mosfet power amplifier