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    MV835 Price and Stock

    Diodes Incorporated ZMV835ATA

    DIODE VAR CAP 68PF 25V SOD-323
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    Diodes Incorporated ZMV835BTC

    DIODE VARACTOR 25V SOD323
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    Diodes Incorporated ZMV835BTA

    DIODE VARACTOR 25V SOD323
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    Diodes Incorporated ZMV835ATC

    DIODE VARACTOR 25V SOD323
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    Lumberg Automation RKMV 8-354/2 M

    Sensor Cables / Actuator Cables
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    Mouser Electronics RKMV 8-354/2 M 36
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    Newark RKMV 8-354/2 M Bulk 15 1
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    Neutron USA RKMV 8-354/2 M 50
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    MV835 Datasheets (16)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    MV835 Knox Semiconductor ABRUPT VARACTOR DIODE Original PDF
    MV835 Knox Semiconductor ABRUPT VARACTOR DIODES Original PDF
    MV835 Crystalonics Voltage Variable Capacitance Diodes Data Book 1976 Scan PDF
    MV835 Motorola Motorola Semiconductor Datasheet Library Scan PDF
    MV835 Motorola European Master Selection Guide 1986 Scan PDF
    MV835 Motorola Semiconductor Data Library Volume 3 1974 Scan PDF
    MV835 MSI Electronics Abrupt / Hyperabrupt Glass Packaged Tuning Diodes Scan PDF
    MV835 Unknown Semiconductor Devices, Diode, and SCR Datasheet Catalog Scan PDF
    MV835 Unknown Shortform Semicon, Diode, and SCR Datasheets Short Form PDF
    MV835B MSI Electronics 30V Vrrm, 39pF Capacitance Varactor Diode Scan PDF
    MV835B Unknown Shortform Semicon, Diode, and SCR Datasheets Short Form PDF
    MV835BCHIP MSI Electronics 30V Vrrm, 39pF Capacitance Varactor Diode Scan PDF
    MV835C MSI Electronics 30V Vrrm, 39pF Capacitance Varactor Diode Scan PDF
    MV835C Unknown Shortform Semicon, Diode, and SCR Datasheets Short Form PDF
    MV835CCHIP MSI Electronics 30V Vrrm, 39pF Capacitance Varactor Diode Scan PDF
    MV835CHIP MSI Electronics 30V Vrrm, 39pF Capacitance Varactor Diode Scan PDF

    MV835 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    diode 218

    Abstract: MV838 MV830 MV831 MV832 MV833 MV834 MV835 MV836 MV837
    Text: ABRUPT VARACTOR DIODES MV830 - MV840 PART NUMBER MV830 MV831 MV832 MV833 MV834 MV835 MV836 MV837 MV838 MV839 MV840 CT DIODE CAPACITANCE Vr = 4 Vdc, f = 1 MHz pF MIN NOM MAX 13.5 16.2 19.8 24.3 29.7 35.1 42.3 50.4 61.2 73.8 90.0 15.0 18.0 22.0 27.0 33.0 39.0


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    MV830 MV840 MV830 MV831 MV832 MV833 MV834 MV835 MV836 MV837 diode 218 MV838 MV831 MV832 MV833 MV834 MV835 MV836 MV837 PDF

    MV840

    Abstract: No abstract text available
    Text: CHARACTERIZATION CURVES P.O. BOX 609 ? ROCKPORT, MAINE 04856 ? 207-236-6076 ? FAX 207-236-9558 -6- ABRUPT VARACTOR DIODES MV830 - MV840 PART NUMBER MV830 MV831 MV832 MV833 MV834 MV835 MV836 MV837 MV838 MV839 MV840 CT DIODE CAPACITANCE Vr = 4 Vdc, f = 1 MHz


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    MV830 MV840 MV831 MV832 MV833 MV834 MV835 MV836 MV837 MV840 PDF

    MV838

    Abstract: MV830 MV831 MV832 MV833 MV834 MV835 MV836 MV837 MV840
    Text: KNOX SEMICONDUCTOR, INC. ABRUPT VARACTOR DIODES MV830 - MV840 TYPE NUMBER MV830 MV831 MV832 MV833 MV834 MV835 MV836 MV837 MV838 MV839 MV840 CT DIODE CAPACITANCE Vr = 4 Vdc, f = 1 MHz pF MIN NOM MAX 13.5 15.0 16.5 16.2 18.0 19.8 19.8 22.0 24.2 24.3 27.0 29.7


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    MV830 MV840 MV830 MV831 MV832 MV833 MV834 MV835 MV836 MV837 MV838 MV831 MV832 MV833 MV834 MV835 MV836 MV837 MV840 PDF

    MSPD2018

    Abstract: MZBD-9161 ZENER 15B1 msd700 package inductance MSPD2018-H50 B20 zener diode glass MPN7320 MZBD9161 MLP7121 15B1 zener diode
    Text: Aeroflex / Metelics, Inc. Microwave Diodes & Passive Semiconductor Devices Microwave Diodes & Passive Semiconductor Devices Aeroflex / Metelics, Inc. Aeroflex / Metelics, Inc. East Coast Operations 54 Grenier Field Road, Londonderry, NH 03053 Tel: 603 641-3800


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    foc17091 MSPD2018 MZBD-9161 ZENER 15B1 msd700 package inductance MSPD2018-H50 B20 zener diode glass MPN7320 MZBD9161 MLP7121 15B1 zener diode PDF

    30223 varactor sod323

    Abstract: Zener c10v KSV1402-1412 SMV30224 30223 sod 323 1N5455 sod-523 varactor diodes MV1662 varactor diode 1N5469 varactor 1N5144
    Text: VARACTORS SMV1401, 1402, 1403, 1404, 1405, 1406, 1407, 1408, 1409, 1410, 1411, SMV1412 TMV1401, 1402, 1403, 1404, 1405, 1406, 1407, 1408, 1409, 1410, 1411, TMV1412 SMV20411, 20412, 20413, 20414, SMV20415 SMV20422, 20423, 20424, SMV20425 SMV20432, 20433, 20434, 20435, 20436, SMV20437


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    SMV1401, SMV1412 TMV1401, TMV1412 SMV20411, SMV20415 SMV20422, SMV20425 SMV20432, SMV20437 30223 varactor sod323 Zener c10v KSV1402-1412 SMV30224 30223 sod 323 1N5455 sod-523 varactor diodes MV1662 varactor diode 1N5469 varactor 1N5144 PDF

    Untitled

    Abstract: No abstract text available
    Text: K n o x S e m ic o n d u c t o r , I n c . ABRUPT VARACTOR DIODES MV830 - MV840 TYPE NUMBER MV830 MV831 MV832 MV833 MV834 MV835 MV836 MV837 MV838 MV839 MV840 Q, QUALITY FACTOR Vr = 4 Vdc f = 50 MHz MIN TYP 35 30 30 25 25 30 30 25 20 25 20 25 20 15 20 15 20


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    MV830 MV840 MV831 MV832 MV833 MV834 MV835 MV836 MV837 PDF

    Untitled

    Abstract: No abstract text available
    Text: MSI ELECTRONICS INC 3SE £ E3 5b5bMbb 000036b T E M S I T - 0 7 -/7 - HERMETICALLY SEALED GL AS S PACKAGED TUNING DIODES 08 D S D elect ABRUPT - HYPERABRU PT U E L E C T R IC A L C H A R A C T E R IS T IC S T a = 2 5 ° C unless otherwise noted GENERAL APPLICATIONS


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    000036b C2/C20 G702A SQ1214A G603A SQ1714 SQ1715 SQ1216A C20/pf PDF

    MV2215

    Abstract: MV2112 MV2201 mv838 MV2213 mv2114 1N5441A 1N5443A 1N5444A MV1620
    Text: RF — SIGNAL PROCESSING DIODES continued General-Purpose Tuning Diodes (continued) MAXIMUM WORKING VOLTAGE s ^ ' 30 V O U S CASE 51 DO-204AA (DO-7) Ct Nominal Capacitance PF ±10% («' V r = 4.0 V f = 1.0 MHz - .Cap.''"'' Ratio 4 -2 5 V Mtn Cap . . Ratso


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    DO-204AA 1N5441A MV1620 1N5442A MV1622 1N5443A MV1624 1N5444A MV1626 1N5445A MV2215 MV2112 MV2201 mv838 MV2213 mv2114 1N5441A 1N5443A 1N5444A MV1620 PDF

    MV830

    Abstract: C1406 MV831 MV832 MV833 MV834 MV835 MV836 MV837 MV838
    Text: MV830 thru MV840 SILICON Silicon voltage-variable capacitance diodes, signed for electronic-tuning applications from de­ to 15 1 0 0 pF. cathode end MAXIMUM RATINGS <TC = 2 5 ° C unless otherwise noted) Sym bol Value Unit Reverse Voltage VR 30 Vdc Forward Current


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    NIV830 MV840 MV830 33AS8) 30Vdc, C1406 MV831 MV832 MV833 MV834 MV835 MV836 MV837 MV838 PDF

    JE1100

    Abstract: MFC8040 MFC8030 MC1316 Triac 9707 schematic of mc1466 Transistor MJE 5332 je 3055 Motorola MCR407-2 MC1466
    Text: M ASTER SELECTION GUIDE MOTOROLA Semiconductors SELECTING THE BEST SEMICONDUCTOR Selecting the best semiconductor fo r a given application can pose a significant challenge. To sim plify the task in selecting a "best" transistor, diode or other device fo r newdesigns, this book's selection tables includeall popular semiconductor devices


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    varactor 36z

    Abstract: germanium halbleiter index transistor Halbleiter Buch 2n5347 2n3054 working of reactance modulator JE2955 germanium transistor 2N3902
    Text: TH€ SEMICONDUCTOR DATA LIBRARY FIRST EDITION prepared by Technical Information Center T h e in fo rm a tio n in th is bo o k has been c a re fu lly checked and is believed to be re lia b le ; ho w ever, no re s p o n s ib ility is assumed fo r inaccuracies. F u rth e rm o re , th is in fo rm a tio n does n o t convey to the purchaser o f s e m ic o n d u c to r


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    Z1000 MZ4614 MZ4627 1N4099 M4L3052 M4L3056 1N5158 varactor 36z germanium halbleiter index transistor Halbleiter Buch 2n5347 2n3054 working of reactance modulator JE2955 germanium transistor 2N3902 PDF

    V839

    Abstract: No abstract text available
    Text: K n o x S e m ic o n d u c t o r , In c ABRUPT VARACTOR DIODES MV830 - MV840 TYPE N UM BER C t DIODE C APACITA NCE Q, Q U A LIT Y FACTO R Vr = 4 Vdc f = 50 MHz MIN TYP Vr = 4 Vdc, f = 1 MHz pF MIN NOM MAX TR , TU N IN G RATIO f = 1 MHz C *4V / C-25V MIN


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    MV830 MV840 C-25V MV831 MV832 MV833 MV835 V839 PDF

    MC2259

    Abstract: MC880P MC9713P mc2257 1N4003 germanium diode specification 2N1256 S P 1N4465 MC9802P MC9718P 3N214
    Text: Semiconductor Data Library Master Index prepared by Technical Information Center The information in this book has been carefully checked and is believed to be reliable; however, no responsibility is assumed for inaccuracies. Furthermore, this information does not convey to the


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    1NS14

    Abstract: 1N487A G610A 1N473A 1MH12 PEC 736 amk 30-2 HA1I34A
    Text: m s ü H ERMETICALLY S E A L E D elect: ABRUPT - HYPERABRUPT Uf G L A S S P A C K A G ED TUNING D IO D ES ELE C T R IC A L CHARACTERISTICS T a = 25° C unle« otherwise noted Diode Cap (CT)* •M0% M V /1 MH/ G EN ER AL LO W IN D U C T A N C E M IN IA T U R E G L A S S


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    SQ1213A MV83Z MV833 MVB34 MV835 MVS36 MV837 MV838 MVB40 1NS14 1N487A G610A 1N473A 1MH12 PEC 736 amk 30-2 HA1I34A PDF

    UAA2001

    Abstract: MC8500 micromodule m68mm19 1N9388 74ALS643 2N6058 MC145026 2N5160 MOTOROLA MC3340 equivalent pn3402
    Text: MOTOROLA Semiconductors THE EUROPEAN MASTER SELECTION 1982 The total num ber of standard Sem iconductor products available from M otorola ex­ ceeds 15 0 0 0 device types. To most of our custom ers this total presents an overw helm ing choice. The European Master Selection lists approxim ately 4 0 0 0 preferred devices that re­


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    0HF40 0HF60 0HF80 6FP10 6F100 70HF10 UAA2001 MC8500 micromodule m68mm19 1N9388 74ALS643 2N6058 MC145026 2N5160 MOTOROLA MC3340 equivalent pn3402 PDF

    diod LT 741

    Abstract: 1217A S0171 S0122 738s MVI40 0068AH
    Text: m s n elect: ABRUPT - HYPERABRUPT Uh HERMETICALLY SEA LED G L A S S P A C K A G E D TUNING DIOD ES ELE C T R IC A L CHARACTERISTICS T a = 25» C unless otherwise noted GENERAL APPLICATIONS TYPE R A T IO C2/C20 NO m m /ty p LOW INDUCTANCE FOR USE TO 2.5 6Hz


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    C2/C30 C2/C20 C4/C25 C2/C15 DO-14 diod LT 741 1217A S0171 S0122 738s MVI40 0068AH PDF

    HA1930

    Abstract: No abstract text available
    Text: O ^ G S D elect; HERMETICALLY SEALED G L A SS PACKAGED TUNING DIODES HYPERABRUPT Wr ABRUPT E L E C T R IC A L CH A R A CTER ISTICS T a = 25° C unless otherwise noted GENERAL APPLICATIONS Oiode Cap. IC T)* pf Q4 $ 50 MHz RATIO C2/C20 min/typ NO LOW INDUCTANCE


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    C2/C20 C2/C30 C4/C25 SQ1213A SQ1714 SQ1215A G702A C20/pf HA1930 PDF

    G603A

    Abstract: S0171 DIODE 1N54 HA1930A 1N547S 10YD 1N5470A G605A GDE 6A SQ1213A
    Text: U S I ELECTRONICS INC 3SE £ E3 SbSbMbb 0 0 0 0 3 6 b T BU SI T -07-/7 - D « a D elect HERM ETICALLY S E A LE D G L A S S P A CK A G ED TUNING D IO D ES A BRU PT - H YPER A B R U PT U E L E C T R IC A L C H A R A C T E R IS T IC S T a = 2 5 ° C unless otherwise noted


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    000036b T-07-19 C2/C20 C2/C30 C4/C25 SQ1213A G702A SQ1214A G603A S0171 DIODE 1N54 HA1930A 1N547S 10YD 1N5470A G605A GDE 6A PDF

    Untitled

    Abstract: No abstract text available
    Text: K n o x S e m ic o n d u c t o r , I n c . ABRUPT VARACTOR DIODES MV830 - MV840 TYPE NU M BER C t DIODE CAPACITANCE Vr = 4 Vdc, f = 1 MHz pF NOM MIN MAX Q, Q U ALITY FACTOR Vr = 4 Vdc f = 50 M Hz TYP MIN TR. TU N IN G RATIO f = 1 MHz C*4V / C-25V MIN TYP


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    MV830 MV840 C-25V MV832 MV833 MV834 MV835 PDF

    SEM 5027A

    Abstract: transistor BD 540 LYS MC710G 131-80 wj 89 MC707G 2n328 LN4005 diode reverse current and voltage mc708g C844P TS36A
    Text: SELECTION GUIDES How To Use The Data Book Numerical Index Alphabetical Index Device Outlines GENERAL INFORMATION SILICON ZENER DIODES Regulator Diodes, Reference Diodes, Precision Reference Diodes and Reference Amplifiers SILICON RECTIFIERS SILICON RECTIFIER ASSEMBLIES


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    1N5450A

    Abstract: MV1644 MV1624 MV1636 MV1641 1N5140 1N5470A
    Text: •MOTOROLA SC -CDIODES/OPTO} 636.7255 MOTOROLA 34 SC DET|b3b?5S5 <D I O D E S / O P T O 34C 003ai0D t | ~ 38100 D 1—I f ' SILICON TUNING DIODE DICE continued) 1C5139 DIE NO. — SERIES LINE SOURCE — DV61 This die provides performance equal to or better than that of


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    003ai0D 1C5139 1N5139 1N5140 1N5141 1N5142 1N5143 1N5144 1N5145 1N5146 1N5450A MV1644 MV1624 MV1636 MV1641 1N5470A PDF