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    TIM1011-8L

    Abstract: TIM1011 TIM1011-8
    Text: TOSHIBA TIM1011-8L MICROWAVE POWER GaAs FET Low Distortion Internally Matched Power GaAs FETs X, Ku-Band Features • Low intermodulation distortion - IM3 = -45 dBc at Po = 28 dBm, - Single carrier level • High power - P1dB = 39.5 dBm at 10.7 GHz to 11.7 GHz


    Original     		PDF TIM1011-8L 2-11C1B) MW50130196 TIM1011-8L TIM1011 TIM1011-8

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA MICROWAVE POWER GaAs FET TIM1011-8L Low Distortion Internally Matched Power GaAs FETs X, Ku-Band Features • Low interm odulation distortion - IM3 = -45 d B c at Po = 28 dBm, - Single carrier level • High power - P1dB = 39.5 dBm at 10.7 GHz to 11.7 GHz


    OCR Scan     		PDF TIM1011-8L 011-8L MW50130196

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA MICROWAVE POWER GaAs FET TIM1011-8L Low Distortion Internally Matched Power GaAs FETs X, Ku-Band Features • Low intermodulation distortion - IM3 = -45 dBc at Po = 28 dBm, - Single carrier level • High power - P1dB = 39.5 dBm at 10.7 GHz to 11.7 GHz


    OCR Scan     		PDF TIM1011-8L MW50130196