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    TIM1011-10

    Abstract: No abstract text available
    Text: TOSHIBA TIM1011-10 MICROWAVE POWER GaAs FET Internally Matched Power GaAs FETs X, Ku-Band Features • High power - P1dB = 40.5 dBm at 10.7 GHz to 11.7 GHz • High gain - G1dB = 6.0 dB at 10.7 GHz to 11.7 GHz • Broadband internally matched • Hermetically sealed package


    Original     		TIM1011-10 2-11C1B) MW50140196 TIM1011-10 PDF

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA MICROWAVE POWER GaAs FET TIM1011-10 Internally Matched Power GaAs FETs X, Ku-Band Features • High power - P1dB = 40.5 dBm at 10.7 GHz to 11.7 GHz • High gain - G-|dB = 6.0 dB at 10.7 GHz to 11.7 GHz • Broadband internally matched • Hermetically sealed package


    OCR Scan     		TIM1011-10 MW50140196 PDF