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    TIM4450-8L

    Abstract: No abstract text available
    Text: TOSHIBA TIM4450-8L MICROWAVE POWER GaAs FET Low Distortion Internally Matched Power GaAs FETs C-Band Features • Low intermodulation distortion - IM3 = -45 dBc at Po = 28 dBm, - Single carrier level • High power - P1dB = 39 dBm at 4.4 GHz to 5.0 GHz • High gain


    Original     		PDF TIM4450-8L 2-11D1B) MW50520196 TIM4450-8L

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA MICROWAVE POWER GaAs FET TIM4450-8L Low Distortion Internally Matched Power GaAs FETs C-Band Features • Low interm odulation distortion - I M 3 = -45 d B c at Po = 28 dBm, - Single carrier level • High power - P1dB = 39 dBm at 4.4 GHz to 5.0 GHz


    OCR Scan     		PDF TIM4450-8L MW50520196 4450-8L

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA MICROWAVE POWER GaAs FET TIM4450-8L Low Distortion Internally Matched Power GaAs FETs C-Band Features • Low intermodulation distortion - IM3 = -45 dBc at Po = 28 dBm, - Single carrier level • High power - P idB = 39 dBm at 4.4 GHz to 5.0 GHz


    OCR Scan     		PDF TIM4450-8L MW50520196 TIM4450-8L 0a2S30b