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    TIM4450-16L

    Abstract: No abstract text available
    Text: TOSHIBA TIM4450-16L MICROWAVE POWER GaAs FET Low Distortion Internally Matched Power GaAs FETs C-Band Features • Low intermodulation distortion - IM3 = -44 dBc at Po = 31.5 dBm, - Single carrier level • High power - P1dB = 42.5 dBm at 4.4 GHz to 5.0 GHz


    Original     		TIM4450-16L 2-16G1B) MW50540196 TIM4450-16L PDF

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA MICROWAVE POWER GaAs FET TIM4450-16L Low Distortion Internally Matched Power GaAs FETs C-Band Features • Low interm odulation distortion - IM3 = -44 d B c at Po = 31.5 dBm, - Single carrier level • High power - P1dB = 42.5 dBm at 4.4 GHz to 5.0 GHz


    OCR Scan     		TIM4450-16L MW50540196 TIM4450-16L PDF

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA MICROWAVE POWER GaAs FET TIM4450-16L Low Distortion Internally Matched Power GaAs FETs C-Band Features • Low intermodulation distortion . |m 3 = -44 dBc at Po = 31.5 dBm, - Single carrier level • High power - P idB = 42.5 dBm at 4.4 GHz to 5.0 GHz


    OCR Scan     		TIM4450-16L TIM4450-16L MW50540196 00B2371 PDF