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    TIM5964-8

    Abstract: No abstract text available
    Text: TOSHIBA TIM5964-8 MICROWAVE POWER GaAs FET Internally Matched Power GaAs FETs C-Band Features • High power - P1dB = 39 dBm at 5.9 GHz to 6.4 GHz • High gain - G1dB = 8.0 dB at 5.9 GHz to 6.4 GHz • Broad band internally matched • Hermetically sealed package


    Original     		PDF TIM5964-8 2-11D1B) MW50730196 TIM5964-8

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA MICROWAVE POWER GaAs FET TIM5964-8 Internally Matched Power GaAs FETs C-Band Features • High power • PidB = 39 dBm at 5.9 GHz to 6.4 GHz • High gain - G1dB = 8.0 dB at 5.9 GHz to 6.4 GHz • Broad band internally matched • Hermetically sealed package


    OCR Scan     		PDF TIM5964-8 2-11D1B) MW50730196 DD22S04 TIM5964-8