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    TIM6472-8L

    Abstract: No abstract text available
    Text: TOSHIBA TIM6472-8L MICROWAVE POWER GaAs FET Low Distortion Internally Matched Power GaAs FETs C-Band Features • Low intermodulation distortion - IM3 = -45 dBc at Po = 28 dBm, - Single carrier level • High power - P1dB = 39 dBm at 6.4 GHz to 7.2 GHz • High gain


    Original     		PDF TIM6472-8L 2-11D1B) MW50890196 TIM6472-8L

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA MICROWAVE POWER GaAs FET TIM6472-8L Low Distortion Internally Matched Power GaAs FETs C-Band Features • Low in te rm o d u la tio n d is to rtio n - IM 3 = -45 d B c a t Po = 28 d B m , - S in g le c a rrie r level • H igh p o w e r - P idB = 39 d B m a t 6.4 G H z to 7.2 G H z


    OCR Scan     		PDF TIM6472-8L MW50890196 6472-8L

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA MICROWAVE POWER GaAs FET TIM6472-8L Low Distortion Internally Matched Power GaAs FETs C-Band Features • Low intermodulation distortion - IM3 = -45 dBc at Po = 28 dBm, - Single carrier level • High power - pidB = 39 dBm at 6.4 GHz to 7 .2 GHz


    OCR Scan     		PDF TIM6472-8L MW50890196 TIM6472-8L