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    N CHANNEL ENHANCED MOSFET Search Results

    N CHANNEL ENHANCED MOSFET Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation
    TK090U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 30 A, 0.09 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    N CHANNEL ENHANCED MOSFET Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    CMLDM7003E

    Abstract: CMLDM7003JE CMLDM7003J
    Text: CMLDM7003E CMLDM7003JE ENHANCED SPECIFICATION SURFACE MOUNT PICOminiTM DUAL N-CHANNEL ENHANCEMENT-MODE SILICON MOSFET SOT-563 CASE FEATURES • ESD protected up to 2kV Central TM Semiconductor Corp. DESCRIPTION: The CENTRAL SEMICONDUCTOR CMLDM7003E and CMLDM7003JE are Enhancement-mode N-Channel


    Original     		PDF CMLDM7003E CMLDM7003JE OT-563 CMLDM7003JE CMLDM7003E CMLDM7003E: CMLDM7003JE: 200mA CMLDM7003J

    fast recovery diode 600v 5A

    Abstract: No abstract text available
    Text: TAK CHEONG N-Channel Power MOSFET 4.5A, 600V, 2.4Ω 1 = Gate 2 = Drain 3 = Source General Description The N-Channel MOSFET is used an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time. This advanced


    Original     		PDF O-220AB DB-100 fast recovery diode 600v 5A

    7A600V

    Abstract: DB-186 195mH
    Text: TAK CHEONG N-Channel Power MOSFET 7A, 600V, 1.2Ω 1 = Gate 2 = Drain 3 = Source GENERAL DESCRIPTION The N-Channel MOSFET is used an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time. This advanced


    Original     		PDF O-220AB DB-100 7A600V DB-186 195mH

    Untitled

    Abstract: No abstract text available
    Text: TAK CHEONG N-Channel Power MOSFET 4A, 600V, 2.4Ω 1 = Gate 2 = Drain 3 = Source General Description The N-Channel MOSFET is used an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time. This advanced


    Original     		PDF O-220AB DB-100

    N-Channel mosfet 600v 1a

    Abstract: DB-181
    Text: TAK CHEONG N-Channel Power MOSFET 2.1A, 600V, 5.6Ω 1 = Gate 2 = Drain 3 = Source General Description The N-Channel MOSFET is used an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time. This advanced


    Original     		PDF O-220AB DB-100 N-Channel mosfet 600v 1a DB-181

    diode marking 41a on semiconductor

    Abstract: No abstract text available
    Text: TAK CHEONG N-Channel Power MOSFET 4.1A, 600V, 2.5Ω 1 = Gate 2 = Drain 3 = Source General Description The N-Channel MOSFET is used an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time. This advanced


    Original     		PDF O-220AB DB-100 diode marking 41a on semiconductor

    Untitled

    Abstract: No abstract text available
    Text: TAK CHEONG N-Channel Power MOSFET 7.2A, 650V, 1.5Ω 1 = Gate 2 = Drain 3 = Source General Description The N-Channel MOSFET is used an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time. This advanced


    Original     		PDF O-220AB DB-100

    db 182

    Abstract: marking code diode DU
    Text: TAK CHEONG N-Channel Power MOSFET 1.9A, 650V, 7.5Ω 1 = Gate 2 = Drain 3 = Source General Description The N-Channel MOSFET is used an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time. This advanced


    Original     		PDF O-220AB DB-100 db 182 marking code diode DU

    Untitled

    Abstract: No abstract text available
    Text: Si1557DH New Product Vishay Siliconix N- and P-Channel 1.8-V G-S MOSFET PRODUCT SUMMARY FEATURES VDS (V) N-Channel P-Channel 12 -12 rDS(on) (W) ID (A) 0.235 @ VGS = 4.5 V 1.3 0.280 @ VGS = 2.5 V 1.2 D TrenchFETr Power MOSFETs D Thermally Enhanced SC-70 Package


    Original     		PDF Si1557DH SC-70 OT-363 SC-70 S-21453--Rev. 19-Aug-02

    SiA511DJ-T1-GE3

    Abstract: SC-70-6 sia511dj "MARKING CODE G2"
    Text: New Product SiA511DJ Vishay Siliconix N- and P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel P-Channel 12 - 12 RDS(on) (Ω) ID (A) • Halogen-free • TrenchFET Power MOSFETs • New Thermally Enhanced PowerPAK® SC-70 Package - Small Footprint Area


    Original     		PDF SiA511DJ SC-70 SC-70-6 08-Apr-05 SiA511DJ-T1-GE3 "MARKING CODE G2"

    Si1557DH

    Abstract: No abstract text available
    Text: Si1557DH New Product Vishay Siliconix N- and P-Channel 1.8-V G-S MOSFET PRODUCT SUMMARY FEATURES VDS (V) N-Channel P-Channel 12 -12 rDS(on) (W) ID (A) 0.235 @ VGS = 4.5 V 1.3 0.280 @ VGS = 2.5 V 1.2 D TrenchFETr Power MOSFETs D Thermally Enhanced SC-70 Package


    Original     		PDF Si1557DH SC-70 OT-363 SC-70 S-21684--Rev. 30-Sep-02

    Si1557DH

    Abstract: No abstract text available
    Text: Si1557DH New Product Vishay Siliconix N- and P-Channel 1.8-V G-S MOSFET PRODUCT SUMMARY FEATURES VDS (V) N-Channel P-Channel 12 -12 rDS(on) (W) ID (A) 0.235 @ VGS = 4.5 V 1.3 0.280 @ VGS = 2.5 V 1.2 D TrenchFETr Power MOSFETs D Thermally Enhanced SC-70 Package


    Original     		PDF Si1557DH SC-70 OT-363 SC-70 18-Jul-08

    Untitled

    Abstract: No abstract text available
    Text: Si1557DH New Product Vishay Siliconix N- and P-Channel 1.8-V G-S MOSFET PRODUCT SUMMARY FEATURES VDS (V) N-Channel P-Channel 12 -12 rDS(on) (W) ID (A) 0.235 @ VGS = 4.5 V 1.3 0.280 @ VGS = 2.5 V 1.2 D TrenchFETr Power MOSFETs D Thermally Enhanced SC-70 Package


    Original     		PDF Si1557DH SC-70 OT-363 SC-70 08-Apr-05

    74592

    Abstract: SiA511DJ-T1-GE3
    Text: New Product SiA511DJ Vishay Siliconix N- and P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel P-Channel 12 - 12 RDS(on) (Ω) ID (A) • Halogen-free • TrenchFET Power MOSFETs • New Thermally Enhanced PowerPAK® SC-70 Package - Small Footprint Area


    Original     		PDF SiA511DJ SC-70-6 SC-70 18-Jul-08 74592 SiA511DJ-T1-GE3

    Untitled

    Abstract: No abstract text available
    Text: CEDM7002AE ENHANCED SPECIFICATION SURFACE MOUNT SILICON N-CHANNEL ENHANCEMENT-MODE MOSFET w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CEDM7002AE is a special ESD protected version of the 2N7002 enhancement-mode N-Channel MOSFET designed for


    Original     		PDF CEDM7002AE 2N7002 OT-883L 200mA 14-August

    651b

    Abstract: fdmc720
    Text: FDMC7208S Dual N-Channel PowerTrench MOSFET Q1: 30 V, 12 A, 9.0 mΩ Q2: 30 V, 16 A, 6.4 mΩ Features General Description Q1: N-Channel This device includes two 30V N-Channel MOSFETs in a dual Power 33 3 mm X 3 mm MLP package. The package is enhanced for exceptional thermal performance.


    Original     		PDF FDMC7208S FDMC7208S 651b fdmc720

    650 DIODE

    Abstract: A4 marking diode DB200 650VVGS
    Text: TAK CHEONG N-Channel Power MOSFET 7.2A, 650V, 1.5Ω 1 = Gate 2 = Drain 3 = Source 1 GENERAL DESCRIPTION 2 The N-Channel MOSFET is used an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time. This advanced


    Original     		PDF O-220FP DB-100 650 DIODE A4 marking diode DB200 650VVGS

    Electronic Lamp Ballasts

    Abstract: DB201
    Text: TAK CHEONG N-Channel Power MOSFET 8A, 600V, 1.15Ω 1 = Gate 2 = Drain 3 = Source 1 GENERAL DESCRIPTION 2 The N-Channel MOSFET is used an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time. This advanced


    Original     		PDF O-220FP DB-100 Electronic Lamp Ballasts DB201

    tff4n60

    Abstract: No abstract text available
    Text: TAK CHEONG N-Channel Power MOSFET 4A, 600V, 2.4Ω 1 = Gate 2 = Drain 3 = Source 1 General Description 2 The N-Channel MOSFET is used an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time. This advanced


    Original     		PDF O-220FP DB-100 tff4n60

    Untitled

    Abstract: No abstract text available
    Text: CMPDM7002AE ENHANCED SPECIFICATION SURFACE MOUNT SILICON N-CHANNEL ENHANCEMENT-MODE MOSFET w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPDM7002AE is a special ESD protected version of the 2N7002 enhancement-mode N-Channel MOSFET designed for


    Original     		PDF CMPDM7002AE 2N7002 C702E OT-23 200mA

    C702E

    Abstract: No abstract text available
    Text: CMPDM7002AE ENHANCED SPECIFICATION SURFACE MOUNT N-CHANNEL ENHANCEMENT-MODE SILICON MOSFET w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPDM7002AE is a special ESD protected version of the 2N7002 enhancement-mode N-channel MOSFET designed for


    Original     		PDF CMPDM7002AE 2N7002 C702E OT-23 350mW 200mA C702E

    Untitled

    Abstract: No abstract text available
    Text: CEDM7002AE ENHANCED SPECIFICATION SURFACE MOUNT SILICON N-CHANNEL ENHANCEMENT-MODE MOSFET w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CEDM7002AE is a special ESD protected version of the 2N7002 enhancement-mode N-Channel MOSFET designed for


    Original     		PDF CEDM7002AE 2N7002 OT-883L 200mA

    Untitled

    Abstract: No abstract text available
    Text: TAK CHEONG N-Channel Power MOSFET 4.5A, 600V, 2.4Ω General Description The N-Channel MOSFET is used an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time. This advanced technology has been especially tailored to minimize on-state


    Original     		PDF O-220FP DB-100

    Fair-Rite ATC

    Abstract: B074 dale rs-2b dale rs-2b 3w 2B43B SURFACE MOUNT RESISTOR 200B M177 SD2923 f-30MHz
    Text: SD2923 RF POWER TRANSISTORS HF/VHF/UHF N-CHANNEL MOSFETs . . . . GOLD METALLIZATION EXCELLENT THERMAL STABILITY COMMON SOURCE CONFIGURATION Pout = 300W MIN. WITH 16 dB GAIN @ 30 MHz . THERMALLY ENHANCED PACKAGING DESCRIPTION The SD2923 is a gold metallized N-Channel MOS


    OCR Scan     		PDF SD2923 SD2923 sc1421d SC14220 008706A L0G1101 Fair-Rite ATC B074 dale rs-2b dale rs-2b 3w 2B43B SURFACE MOUNT RESISTOR 200B M177 f-30MHz