3020 transistor
Abstract: 4707 N Channel MOSFETs MPM3002 MPM3012 P channel MOSFET 10A schematic P-channel MOSFET 100V, 10 Amps p-channel power mosfet 14A S 170 MOSFET TRANSISTOR P-channel MOSFET 100V, 20 Amps
Text: ISO 9001 CERTIFIED BY DSCC M.S. KENNEDY CORP. H-BRIDGE MOSFET POWER MODULE 3020 4707 Dey Road Liverpool, N.Y. 13088 315 701-6751 FEATURES: • • • • • • Pin Compatible with MPM3002 and MPM3012 P and N Channel MOSFETs for Ease of Drive N Channel Current Sensing MOSFET for Lossless Sensing
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MPM3002
MPM3012
3020 transistor
4707 N Channel MOSFETs
MPM3012
P channel MOSFET 10A schematic
P-channel MOSFET 100V, 10 Amps
p-channel power mosfet 14A
S 170 MOSFET TRANSISTOR
P-channel MOSFET 100V, 20 Amps
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mosfet vgs 5v
Abstract: 5V GATE TO SOURCE VOLTAGE MOSFET shd220213
Text: SENSITRON SEMICONDUCTOR SHD220213 TECHNICAL DATA DATA SHEET 4139, REV - HERMETIC POWER MOSFET N-CHANNEL LOGIC LEVEL FEATURES: 55 Volt, 0.06 Ohm MOSFET Hermetically Sealed Add a “C” to the part number for ceramic seals SHDC220213 Surface Mount Package
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SHD220213
SHDC220213)
SHD220213
mosfet vgs 5v
5V GATE TO SOURCE VOLTAGE MOSFET
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5V GATE TO SOURCE VOLTAGE MOSFET
Abstract: mosfet 221
Text: SENSITRON SEMICONDUCTOR SHD220213 TECHNICAL DATA DATA SHEET 4139, REV - HERMETIC POWER MOSFET N-CHANNEL LOGIC LEVEL FEATURES: 55 Volt, 0.06 Ohm MOSFET Hermetically Sealed Add a “C” to the part number for ceramic seals SHDC220213 Surface Mount Package
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SHD220213
SHDC220213)
5V GATE TO SOURCE VOLTAGE MOSFET
mosfet 221
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IRF130
Abstract: N Channel Mosfet 12W SHD217302A SHD217302
Text: SENSITRON SEMICONDUCTOR SHD217302A TECHNICAL DATA DATA SHEET 317, REV - HERMETIC POWER MOSFET N-CHANNEL FEATURES: 100 Volt, 0.16 Ohm, 14A MOSFET Fast Switching Low RDS on Equivalent to IRF130 Series MAXIMUM RATINGS ALL RATINGS ARE AT TC = 25C UNLESS OTHERWISE SPECIFIED.
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SHD217302A
IRF130
N Channel Mosfet 12W
SHD217302A
SHD217302
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SHD217302
Abstract: No abstract text available
Text: SENSITRON SEMICONDUCTOR SHD217302A TECHNICAL DATA DATA SHEET 317, REV - HERMETIC POWER MOSFET N-CHANNEL FEATURES: 100 Volt, 0.16 Ohm, 14A MOSFET Fast Switching Low RDS on Equivalent to IRF130 Series MAXIMUM RATINGS ALL RATINGS ARE AT TC = 25C UNLESS OTHERWISE SPECIFIED.
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SHD217302A
IRF130
SHD217302A
SHD217302
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BQ25A
Abstract: BQ-25a bq24725A BQ25A TI Texas Instruments BQ25A 14 pin ic ROHM ELECTRONICS SIS412DN BQ24725ARGRT bq24725ARGRR 65W ac adapter schematic
Text: bq24725A SLUSAL0 – SEPTEMBER 2011 www.ti.com 1-4 Cell Li+ Battery SMBus Charge Controller with N-Channel Power MOSFET Selector and Advanced Circuit Protection Check for Samples: bq24725A FEATURES DESCRIPTION • The bq24725A is a high-efficiency, synchronous
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bq24725A
615kHz,
750kHz,
885kHz
BQ25A
BQ-25a
BQ25A TI
Texas Instruments BQ25A
14 pin ic ROHM ELECTRONICS
SIS412DN
BQ24725ARGRT
bq24725ARGRR
65W ac adapter schematic
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transistor v2w
Abstract: transistor C 2240 TRANSISTOR 500 PL031 TT 2240
Text: =z -z-= = =- * =s .- -a a-= = = an AMP company RF MOSFET Power Transistor, 500 - 1000 MHz IOW, 28V LF281 OA Features N-Channel Enhancement Mode Device DMOS Structure Lower Capacitances for Broadband Operation Common Source Configuration Lower Noise Floor
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LF281
rt-l-970'
transistor v2w
transistor C 2240
TRANSISTOR 500
PL031
TT 2240
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bq24725
Abstract: BQ25A
Text: bq24725A SLUSAL0 – SEPTEMBER 2011 www.ti.com 1-4 Cell Li+ Battery SMBus Charge Controller with N-Channel Power MOSFET Selector and Advanced Circuit Protection Check for Samples: bq24725A FEATURES DESCRIPTION • The bq24725A is a high-efficiency, synchronous
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bq24725A
bq24725
BQ25A
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BQ25A
Abstract: BQ-25a BQ25A TI Texas Instruments BQ25A
Text: bq24725A SLUSAL0 – SEPTEMBER 2011 www.ti.com 1-4 Cell Li+ Battery SMBus Charge Controller with N-Channel Power MOSFET Selector and Advanced Circuit Protection Check for Samples: bq24725A FEATURES DESCRIPTION • The bq24725A is a high-efficiency, synchronous
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bq24725A
615kHz,
750kHz,
885kHz
BQ25A
BQ-25a
BQ25A TI
Texas Instruments BQ25A
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BQ25A
Abstract: BQ-25a 14 pin ic ROHM ELECTRONICS BQ25A TI Texas Instruments BQ25A SIS412DN bq24725ARGRR bq24725A BQ24725ARGRT terminal end plate AP 1.5
Text: bq24725A SLUSAL0 – SEPTEMBER 2011 www.ti.com 1-4 Cell Li+ Battery SMBus Charge Controller with N-Channel Power MOSFET Selector and Advanced Circuit Protection Check for Samples: bq24725A FEATURES DESCRIPTION • The bq24725A is a high-efficiency, synchronous
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bq24725A
615kHz,
750kHz,
885kHz
BQ25A
BQ-25a
14 pin ic ROHM ELECTRONICS
BQ25A TI
Texas Instruments BQ25A
SIS412DN
bq24725ARGRR
BQ24725ARGRT
terminal end plate AP 1.5
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BQ25A
Abstract: BQ-25a BQ25A TI 14 pin ic ROHM ELECTRONICS bq24725ARGRR Texas Instruments BQ25A bq24725A Sis412DN 90W circuit Notebook Power Adapter BQ24725ARGRT
Text: bq24725A SLUSAL0 – SEPTEMBER 2011 www.ti.com 1-4 Cell Li+ Battery SMBus Charge Controller with N-Channel Power MOSFET Selector and Advanced Circuit Protection Check for Samples: bq24725A FEATURES DESCRIPTION • The bq24725A is a high-efficiency, synchronous
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bq24725A
BQ25A
BQ-25a
BQ25A TI
14 pin ic ROHM ELECTRONICS
bq24725ARGRR
Texas Instruments BQ25A
Sis412DN
90W circuit Notebook Power Adapter
BQ24725ARGRT
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BQ735
Abstract: bQ73 bq24735 SIS412DN
Text: bq24735 SLUSAK9 – SEPTEMBER 2011 www.ti.com 1-4 Cell Li+ Battery SMBus Charge Controller for Supporting Turbo Boost Mode with N-Channel Power MOSFET Selector Check for Samples: bq24735 FEATURES DESCRIPTION • The bq24735 is a high-efficiency, synchronous
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bq24735
615kHz,
750kHz,
885kHz
BQ735
bQ73
SIS412DN
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BQ735
Abstract: bq24735RGRR Sis412DN bQ73 BAT54 BAT54A BAT54C BSS138W FDS6680A PDS1040
Text: bq24735 SLUSAK9 – SEPTEMBER 2011 www.ti.com 1-4 Cell Li+ Battery SMBus Charge Controller for Supporting Turbo Boost Mode with N-Channel Power MOSFET Selector Check for Samples: bq24735 FEATURES DESCRIPTION • The bq24735 is a high-efficiency, synchronous
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bq24735
BQ735
bq24735RGRR
Sis412DN
bQ73
BAT54
BAT54A
BAT54C
BSS138W
FDS6680A
PDS1040
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BQ735
Abstract: bQ73
Text: bq24735 SLUSAK9 – SEPTEMBER 2011 www.ti.com 1-4 Cell Li+ Battery SMBus Charge Controller for Supporting Turbo Boost Mode with N-Channel Power MOSFET Selector Check for Samples: bq24735 FEATURES DESCRIPTION • The bq24735 is a high-efficiency, synchronous
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bq24735
BQ735
bQ73
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n-channel 12p
Abstract: No abstract text available
Text: STBP112 Overvoltage protection device Datasheet - production data Features • Input overvoltage protection up to 28 V ■ Integrated high voltage N-channel MOSFET switch - low RDS on of 165 mΩ ■ Integrated charge pump ■ Maximum continuous current of 2 A
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STBP112
n-channel 12p
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STBP112
Abstract: STBP112DV
Text: STBP112 Overvoltage protection device Datasheet − preliminary data Features • Input overvoltage protection up to 28 V ■ Integrated high voltage N-channel MOSFET switch - low RDS on of 170 mΩ ■ Integrated charge pump ■ Maximum continuous current of 2 A
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STBP112
STBP112
STBP112DV
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Untitled
Abstract: No abstract text available
Text: STBP112 Overvoltage protection device Datasheet − preliminary data Features • Input overvoltage protection up to 28 V ■ Integrated high voltage N-channel MOSFET switch - low RDS on of 170 mΩ ■ Integrated charge pump ■ Maximum continuous current of 2 A
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STBP112
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n-channel 12p
Abstract: No abstract text available
Text: STBP112 Overvoltage protection device Datasheet − production data Features • Input overvoltage protection up to 28 V ■ Integrated high voltage N-channel MOSFET switch - low RDS on of 165 mΩ ■ Integrated charge pump ■ Maximum continuous current of 2 A
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STBP112
n-channel 12p
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BQ735
Abstract: No abstract text available
Text: bq24735 www.ti.com SLUSAK9A – SEPTEMBER 2011 – REVISED JANUARY 2013 1-4 Cell Li+ Battery SMBus Charge Controller for Supporting Turbo Boost Mode with N-Channel Power MOSFET Selector Check for Samples: bq24735 FEATURES DESCRIPTION • The bq24735 is a high-efficiency, synchronous
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bq24735
615kHz,
750kHz,
885kHz
BQ735
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BQ735
Abstract: No abstract text available
Text: bq24735 www.ti.com SLUSAK9A – SEPTEMBER 2011 – REVISED JANUARY 2013 1-4 Cell Li+ Battery SMBus Charge Controller for Supporting Turbo Boost Mode with N-Channel Power MOSFET Selector Check for Samples: bq24735 FEATURES DESCRIPTION • The bq24735 is a high-efficiency, synchronous
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bq24735
BQ735
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F1840
Abstract: Cree Microwave cree rf UPF2012 UPF2012-178 UPF2012F UPF2012P package type 440109
Text: UPF2012 12W, 2.0 GHz, 26V Broadband RF Power N-Channel Enhancement-Mode Lateral MOSFET This device is designed for base station applications up to frequencies of 2.0 GHz. Rated with a minimum output power of 12W, it is ideal for CDMA, TDMA, GSM, FM, Single or MultiCarrier Power Amplifiers in Class A or AB operation.
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UPF2012
30dBc
UPF2012F
UPF2012P
UPF2012
F1840
Cree Microwave
cree rf
UPF2012-178
UPF2012F
UPF2012P
package type 440109
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Untitled
Abstract: No abstract text available
Text: UPF2012 12W, 2.0 GHz, 26V Broadband RF Power N-Channel Enhancement-Mode Lateral MOSFET This device is designed for base station applications up to frequencies of 2.0 GHz. Rated with a minimum output power of 12W, it is ideal for CDMA, TDMA, GSM, FM, Single or MultiCarrier Power Amplifiers in Class A or AB operation.
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UPF2012
30dBc
UPF2012F
UPF2012P
44017r
UPF2012
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Untitled
Abstract: No abstract text available
Text: UPF2012 12W, 2.0 GHz, 26V Broadband RF Power N-Channel Enhancement-Mode Lateral MOSFET This device is designed for base station applications up to frequencies of 2.0 GHz. Rated with a minimum output power of 12W, it is ideal for CDMA, TDMA, GSM, FM, Single or MultiCarrier Power Amplifiers in Class A or AB operation.
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UPF2012
30dBc
UPF2012F
UPF2012P
UPF2012
UPF2012F
UPF2012P
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40af
Abstract: VN67AF vn40af VN89AF vn89af80v
Text: D f f l r ä D IL VN40AF, VN67AF, VN89AF n-Channel Enhancem ent-m ode Vertical Power MOSFET FEATURES APPLICATIONS • High speed, high current switching • Switching power supplies • Current sharing capability when paralleled • DC to DC inverters • Directly interface to CMOS, DTL, TTL logic
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VN40AF,
VN67AF,
VN89AF
VN40AF.
VN67AF.
VN89AF.
40af
VN67AF
vn40af
VN89AF
vn89af80v
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