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    N0600N Search Results

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    N0600N Price and Stock

    Rochester Electronics LLC N0600N-S17-AY

    MOSFET N-CH 60V 30A TO220
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    DigiKey N0600N-S17-AY Tube 580
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    Renesas Electronics Corporation N0600N-S17-AY

    Trans MOSFET N-CH 60V 30A 3-Pin(3+Tab) TO-220 Isolated Tube
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    Verical N0600N-S17-AY 22,000 670
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    Rochester Electronics N0600N-S17-AY 22,000 1
    • 1 $0.4978
    • 10 $0.4978
    • 100 $0.4679
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    SMC Corporation of America NCA1B150-0600N+0600N-XC10

    CYLINDER, TIE ROD, NCA1 SERIES | SMC Corporation NCA1B150-0600N+0600N-XC10
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    RS NCA1B150-0600N+0600N-XC10 Bulk 5 Weeks 1
    • 1 $258.05
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    SMC Corporation of America NCA1B325-0300N+0600N-XC10

    CYLINDER, TIE ROD, NCA1 SERIES | SMC Corporation NCA1B325-0300N+0600N-XC10
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    RS NCA1B325-0300N+0600N-XC10 Bulk 5 Weeks 1
    • 1 $456.5
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    SMC Corporation of America NCA1B250-0600N+0600N-XC10

    CYLINDER, TIE ROD, NCA1 SERIES | SMC Corporation NCA1B250-0600N+0600N-XC10
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    RS NCA1B250-0600N+0600N-XC10 Bulk 5 Weeks 1
    • 1 $295.85
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    N0600N Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    N0600N-S17-AY Renesas Electronics FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 60V 30A TO-220 Original PDF

    N0600N Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Data Sheet N0600N R07DS0220EJ0100 Rev.1.00 Jan 25, 2011 MOS FIELD EFFECT TRANSISTOR Description The N0600N is N-channel MOS Field Effect Transistor designed for high current switching applications. Features • Low on-state resistance ⎯ RDS on 1 = 25 m MAX. (VGS =10 V, ID = 15 A)


    Original     		N0600N R07DS0220EJ0100 N0600N N0600N-S17-AY 50p/tube O-220 PDF

    N0600N-S17

    Abstract: N0600N-S17-AY N0600N N0600
    Text: Preliminary Data Sheet N0600N R07DS0220EJ0100 Rev.1.00 Jan 25, 2011 MOS FIELD EFFECT TRANSISTOR Description The N0600N is N-channel MOS Field Effect Transistor designed for high current switching applications. Features • Low on-state resistance ⎯ RDS on 1 = 25 mΩ MAX. (VGS =10 V, ID = 15 A)


    Original     		N0600N R07DS0220EJ0100 N0600N N0600N-S17-AY 50p/tube O-220 Voltage9044 N0600N-S17 N0600 PDF

    RJK03P7DPA

    Abstract: NP109N055PUJ rjh60d7bdpq rjh60t04 rjp65t43 NP75N04YUG NP60N055MUK NP109N04PUK RJU6052SDPD-E0 PS2761B-1
    Text: RENESAS Electronics New Product Highlight Highlight of Discrete Devices Renesas Electronics Corporation Analog & Power Devices Marketing & Production Planning Division July 2013 2012 Renesas Electronics Corporation. All rights reserved. 00000-A RENESAS Discrete Devices Position


    Original     		0000-A PAE-AA-12-0177-1 PAE-AA-12-0049-1 RJK03P7DPA NP109N055PUJ rjh60d7bdpq rjh60t04 rjp65t43 NP75N04YUG NP60N055MUK NP109N04PUK RJU6052SDPD-E0 PS2761B-1 PDF