Marking N5
Abstract: KRC418E N5 marking
Text: SEMICONDUCTOR KRC418E MARKING SPECIFICATION ESM PACKAGE 1. Marking method Laser Marking 2. Marking N5 No. Item Marking 1 Device Mark N5 KRC418E 2 hFE Grade - - 00.12.27 Revision No : 00 Description 1/1
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KRC418E
Marking N5
KRC418E
N5 marking
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marking n52
Abstract: KRC868E
Text: SEMICONDUCTOR KRC868E MARKING SPECIFICATION TES6 PACKAGE 1. Marking method Laser Marking N5 1 3 No. 0 1 2. Marking 2 Item Marking Description Device Mark N5 KRC868E hFE Grade - - * Lot No. 01 2006. 1st Week [0:1st Character, 1:2nd Character] Pin No. Dot Pin 1 Index.
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KRC868E
marking n52
KRC868E
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KRC418
Abstract: No abstract text available
Text: SEMICONDUCTOR KRC418 MARKING SPECIFICATION USM PACKAGE 1. Marking method Laser Marking 2. Marking No. 0 1 N5 1 2 Item Marking Description Device Mark N5 KRC418 hFE Grade - - * Lot No. 01 2006. 1st Week [0:1st Character, 1:2nd Character] Note * Lot No. marking method
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KRC418
KRC418
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N5 SOT23
Abstract: KRC118S Marking N5
Text: SEMICONDUCTOR KRC118S MARKING SPECIFICATION SOT-23 PACKAGE 1. Marking method Laser Marking 2. Marking N5 No. 1 Item Marking Device Mark N5 KRC118S hFE Grade - - * Lot No. 01 2 Description 1998. 1st Week [ 0: 1st Character, 1: 2nd Character] [Note] * Lot No. marking method
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KRC118S
OT-23
N5 SOT23
KRC118S
Marking N5
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marking n52
Abstract: KRC668E
Text: SEMICONDUCTOR KRC668E MARKING SPECIFICATION TESV PACKAGE 1. Marking method Laser Marking N5 1 3 No. 0 1 2. Marking 2 Item Marking Description Device Mark N5 KRC668E hFE Grade - - * Lot No. 01 2006. 1st Week [0:1st Character, 1:2nd Character] Pin No. Dot Pin 1 Index.
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KRC668E
marking n52
KRC668E
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marking n52
Abstract: KRC868U
Text: SEMICONDUCTOR KRC868U MARKING SPECIFICATION US6 PACKAGE 1. Marking method Laser Marking N5 1 3 No. 0 1 2. Marking 2 Item Marking Description Device Mark N5 KRC868U hFE Grade - - * Lot No. 01 2006. 1st Week [0:1st Character, 1:2nd Character] Pin No. Dot Pin 1 Index.
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KRC868U
marking n52
KRC868U
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Marking N5
Abstract: marking n52 KRC668U
Text: SEMICONDUCTOR KRC668U MARKING SPECIFICATION USV PACKAGE 1. Marking method Laser Marking N5 1 3 No. 0 1 2. Marking 2 Item Marking Description Device Mark N5 KRC668U hFE Grade - - * Lot No. 01 2006. 1st Week [0:1st Character, 1:2nd Character] Dot ● Pin 1 Indexs
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KRC668U
Marking N5
marking n52
KRC668U
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DRCF143E
Abstract: No abstract text available
Text: DRCF143E Tentative Total pages page DRCF143E Silicon NPN epitaxial planar type For digital circuits Marking Symbol : N5 Package Code : ML3-N4-B Internal Connection Absolute Maximum Ratings Ta = 25 °C Parameter Collector-base voltage Emitter open Collector-emitter voltage (Base open)
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DRCF143E
DRCF143E
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transistor marking N1
Abstract: marking CODE n3 NRD4007 marking n4 n1 MARKing NRD4003 sma flat NSD12 NSD15 NRD4004
Text: 02/22/2006 www.niccomp.com | tech support: [email protected] COMPONENT MARKING PRODUCTS: SMT DIODES SERIES: NRD & NSD TYPE: SMA SIZE FLAT CHIP RECTIFIER DIODES NIC SERIES: NRD N1 PART NUMBER CODE: N1 = NRD4001, N2 = NRD4002, N3 = NRD4003, N4 = NRD4004 N5 = NRD4005, N6 = NRD4006, N7 = NRD4007
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NRD4001,
NRD4002,
NRD4003,
NRD4004
NRD4005,
NRD4006,
NRD4007
NSD12,
NSD13,
NSD14,
transistor marking N1
marking CODE n3
NRD4007
marking n4
n1 MARKing
NRD4003
sma flat
NSD12
NSD15
NRD4004
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marking CODE n5
Abstract: N5 marking code S2152 2768-C
Text: Chokes for Power Lines Series/Type: B82991S*N5 The following products presented in this data sheet are being withdrawn. Ordering Code B82991S2152N005 Substitute Product Date of Withdrawal 2003-06-27 Deadline Last Orders 2003-10-01 Last Shipments 2003-12-31
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B82991S
B82991S2152N005
B82991
S2152
marking CODE n5
N5 marking code
2768-C
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AB244A
Abstract: R488A AD9361 AK2177 CMOS-9HD UPD65891 N526A PD65891 tqfp 64 thermal resistance nec PD65881
Text: Design Manual CMOS Gate Array, Embedded Array Package Ver. 4.0 Target Series CMOS-N5 Series CMOS-9HD Series CMOS-10HD Series EA-9HD Series Document No. A16400EJ4V0DM00 4th edition Date Published December 2004 NS CP(N) NEC Electronics Corporation 2002
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CMOS-10HD
A16400EJ4V0DM00
A16400EJ4V0DM
IR50-203-3-37
IR50-207-3-37
AB244A
R488A
AD9361
AK2177
CMOS-9HD
UPD65891
N526A
PD65891
tqfp 64 thermal resistance nec
PD65881
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Vishay diodes code marking
Abstract: marking code vishay label VISHAY MARKING CODE Vishay SOT23 MARKING F5 Vishay DaTE CODE marking code vishay MARKING CODE f5 SOD-523 DO-219AB marking CODE n5 marking l4 sot-23
Text: VISHAY Vishay Semiconductors Marking of Diodes View from top View from top R9 F5 Date code: R = Year 9 = Month Type code Cathode band Type code Pin 1 18919 18904 Figure 4. SOD-323 Figure 1. LLP75-3A, LLP75-3B FC View from top N5 H3 Cathode Date code: N = Year
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OD-323
LLP75-3A,
LLP75-3B
OD-523
DO-219AB)
OT-23
OD-123
06-May-04
DO-35
Vishay diodes code marking
marking code vishay label
VISHAY MARKING CODE
Vishay SOT23 MARKING F5
Vishay DaTE CODE
marking code vishay
MARKING CODE f5
SOD-523 DO-219AB
marking CODE n5
marking l4 sot-23
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Untitled
Abstract: No abstract text available
Text: Comchip Zener Diode SMD Diode Specialist 1N5221B-G Thru. 1N5267B-G N5 Voltage: 2.4 to 75 Volts Power: 0.5 Watts RoHS Device Features DO-35 -Silicon planar power Zener diode. -The Zener voltages are graded according to the international E24 standard, smaller voltage
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1N5221B-G
1N5267B-G
DO-35
012ounce,
33gram
-2X10
-4X10
10X10
QW-BZ001
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F5 marking code
Abstract: MARKING CODE f5 marking code vishay label SMF DO-219AB Vishay diodes code marking Vishay DaTE CODE DO-219AB marking L4 SOD123 SOD-523 DO-219AB SOD-80 sod123
Text: Vishay Semiconductors Marking of Diodes View from top View from top R9 F5 Date code: R = Year 9 = Month Type code Cathode band Type code Pin 1 18919 Figure 4. SOD-323 18904 Figure 1. LLP75-3A, LLP75-3B FC View from top N5 H3 Cathode Date code: N = Year 5 = Month
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OD-323
LLP75-3A,
LLP75-3B
OD-523
DO-219AB)
OT-23
OD-123
06-May-04
F5 marking code
MARKING CODE f5
marking code vishay label
SMF DO-219AB
Vishay diodes code marking
Vishay DaTE CODE
DO-219AB
marking L4 SOD123
SOD-523 DO-219AB
SOD-80 sod123
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BA142
Abstract: EIA J code marking A7 marking tantalum marking code marking code E6 e5 marking marking code 336 MARKING CODE N k 10 marking code
Text: Tantalum Chip Capacitors NTC-T Series CAPACITANCE CODES VOLTAGE CODES A e G J A C D E V H COMPONENT MARKING J Case Size J A5 E5 J5 N5 S5 W5 A6 E6 J6 N6 S6 W6 A7 J7 N7 S7 Code 2.5 4 6.3 10 16 20 25 35 50 Polarity Marking anode J 104 154 224 334 474 684 105
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10Vdc
16Vdc
BA142
EIA J code marking
A7 marking
tantalum marking code
marking code E6
e5 marking
marking code 336
MARKING CODE N
k 10 marking code
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Untitled
Abstract: No abstract text available
Text: TE X AS I NS TRUM E NTS - P RO DUCTION D ATA Stellaris LM3S9BN5 Microcontroller D ATA SHE E T D S -LM 3S 9B N5 - 9 9 7 0 C opyri ght 200 7-2011 Texas Instruments Incorporated Copyright Copyright © 2007-2011 Texas Instruments Incorporated All rights reserved. Stellaris and StellarisWare® are registered trademarks of Texas Instruments
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se617
Abstract: vhdl code for 74192 UPD65891 a1387 transistor F495 transistor f422 equivalent tt 2246 Transistor TT 2246 transistor f422 UPD65883
Text: Design Manual CMOS-N5 Series CMOS Gate Array Ver. 7.0 Document No. A13826EJ7V0DM00 7th edition Date Published March 2004 N CP(K) c Printed in Japan [MEMO] 2 Design Manual A13826EJ7V0DM NOTES FOR CMOS DEVICES 1 VOLTAGE APPLICATION WAVEFORM AT INPUT PIN Waveform distortion due to input noise or a reflected wave may cause malfunction. If the input of the
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A13826EJ7V0DM00
A13826EJ7V0DM
se617
vhdl code for 74192
UPD65891
a1387
transistor F495
transistor f422 equivalent
tt 2246
Transistor TT 2246
transistor f422
UPD65883
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Untitled
Abstract: No abstract text available
Text: NRND: Not recommended for new designs. TE X AS I NS TRUM E NTS - P RO DUCTION D ATA Stellaris LM3S9BN5 Microcontroller D ATA SHE E T D S -LM3S 9B N5 - 1 3 4 4 2 . 2 5 4 9 S P M S 213B C o p yri g h t 2 0 07-2012 Te xa s In stru me n ts In co rporated
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Untitled
Abstract: No abstract text available
Text: NRND: Not recommended for new designs. TE X AS I NS TRUM E NTS - P RO DUCTION D ATA Stellaris LM3S9BN5 Microcontroller D ATA SHE E T D S -LM3S 9B N5 - 1 3 4 4 2 . 2 5 4 9 S P M S 213B C o p yri g h t 2 0 07-2012 Te xa s In stru me n ts In co rporated
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Untitled
Abstract: No abstract text available
Text: TE X AS I NS TRUM E NTS - P RO DUCTION D ATA Stellaris LM3S9BN5 Microcontroller D ATA SHE E T D S -LM3S 9B N5 - 11 4 2 5 C o p yri g h t 2 0 07-2012 Te xa s In stru me n ts In co rporated Copyright Copyright © 2007-2012 Texas Instruments Incorporated All rights reserved. Stellaris and StellarisWare® are registered trademarks of Texas Instruments
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IC1340
Abstract: No abstract text available
Text: TE X AS I NS TRUM E NTS - P RO DUCTION D ATA Stellaris LM3S9BN5 Microcontroller D ATA SHE E T D S -LM3S 9B N5 - 11 4 2 5 C o p yri g h t 2 0 07-2012 Te xa s In stru me n ts In co rporated Copyright Copyright © 2007-2012 Texas Instruments Incorporated All rights reserved. Stellaris and StellarisWare® are registered trademarks of Texas Instruments
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Abstract: No abstract text available
Text: TE X AS I NS TRUM E NTS - P RO DUCTION D ATA Stellaris LM3S9BN5 Microcontroller D ATA SHE E T D S -LM3S 9B N5 - 1 5 8 5 2 . 2 7 4 3 S P M S 213C C o p yri g h t 2 0 07-2014 Te xa s In stru me n ts In co rporated Copyright Copyright © 2007-2014 Texas Instruments Incorporated All rights reserved. Stellaris and StellarisWare® are registered trademarks of Texas Instruments
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100003B
Abstract: No abstract text available
Text: 6 7 THIS DRAWING IS UNPUBLISHED. COPYRIGHT - By - 4 5 3 2 RELEASED FOR PUBLICATION ALL RIGHTS RESERVED. REVISIONS LOC DIST AD 00 LTR 0.51 N5 [. 020 ] X- HOUSING: CONTACT: STAND-OFFS TYP M / A A A A A A A DESCRIPTION FLAME RETARDANT, GLASS PHOSPHOR BRONZE REVISED PER
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76jum[
62jum[
27jum[
Q5NOV02
100003B
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Untitled
Abstract: No abstract text available
Text: N> CO CO LLECTOR PO W E R D I S S I P A T I O N o 8 ë S g I P c m W OUTPUT SU SC EPTA N C E b ^ b ,* ) o ro en (m s ) S u y y y y / - c N5 8 y / 400 Ta y y / s SCO TEMPERATURE (ï) t\3 O l lg y y 5 mA AMBIENT ‘O II •-* < C Q a> O Q O il » 2 e “ 11 i S
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500MHz
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