TO-243
Abstract: No abstract text available
Text: Package Outline 3-Lead TO-243AA SOT-89 Package Outline (N8) b Symbol Dimensions (mm) b1 A b b1 C D D1 E E1 MIN 1.40 0.44 0.36 0.35 4.40 1.62 2.29 2.13 NOM - - - - - - - - MAX 1.60 0.56 0.48 0.44 4.60 1.83 2.60 2.29 e e1 1.50 BSC 3.00 BSC H L 3.94 0.89 -
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O-243AA
OT-89)
O-243,
DSPD-3TO243AAN8,
D070908.
DSPD-3TO243AAN8
D070908
TO-243
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S8 Package
Abstract: Diode LT 228 LT 076 LT1016 N8 package Dimension lt 0229 LTC DWG 05-08-1610
Text: SPECIFICATION NOTICE LT1016 October 1997 The LT 1016 data sheet has been modified. The packaging information has been updated. Change TJMAX for the N8 package and the S8 package from 100°C to 125°C. Change θJA for the S8 package from 120°C/W to 150°C/W. Also, omit Note #2 for the S8 package, ”LEAD
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LT1016
152mm)
254mm)
S8 Package
Diode LT 228
LT 076
LT1016
N8 package Dimension
lt 0229
LTC DWG 05-08-1610
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DSPD-3TO243AAN8
Abstract: No abstract text available
Text: Package Outline 3-Lead TO-243AA SOT-89 Package Outline (N8) b Symbol Dimensions (mm) b1 A b b1 C D D1 E E1 MIN 1.40 0.44 0.36 0.35 4.40 1.62 2.29 2.00 NOM - - - - - - - - MAX 1.60 0.56 0.48 0.44 4.60 1.83 2.60 2.29 e e1 1.50 BSC 3.00 BSC † H L 3.94 0.89
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O-243AA
OT-89)
O-243,
DSPD-3TO243AAN8,
E051509.
DSPD-3TO243AAN8
E051509
DSPD-3TO243AAN8
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a807
Abstract: 7272 TO-243AA
Text: Package Outlines 3 LEAD TO-243AA SOT-89 Surface Mount Package (N8) 0.177 ± 0.004 (4.4958 ± 0.1016) 0.068 ± 0.004 (1.7272 ± 0.1016) 0.059 ± 0.004 (1.4986 ± 0.1016) D A D1 0.161 ± 0.006 (4.0894 ± 0.1524) H 0.096 ± 0.006 (2.4384 ± 0.1524) E 0.041 ± 0.006
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O-243AA
OT-89)
DSPD-3TO243AAN8
A052404
a807
7272
TO-243AA
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TO-243AA
Abstract: PO23 jedec Package LND150N8 equivalent PO24 LND150N8 TO243AA
Text: Package Outlines .173 .181 .064 .072 .155 .167 .035 .047 1 2 .014 .019 .055 .063 3 .090 .102 .017 .022 .059 BSC .014 .017 .084 .090 1-Gate 2-Drain 3-Source .118 BSC For LND150N8 only: 1-Gate 2-Source 3-Drain TO-243AA SOT-89 Surface Mount "N8" Package 17
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LND150N8
O-243AA
OT-89)
OT-89
O-243AA)
suf017
TO-243AA
PO23
jedec Package
LND150N8 equivalent
PO24
TO243AA
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Untitled
Abstract: No abstract text available
Text: N8 Package 8-Lead PDIP Narrow .300 Inch (Reference LTC DWG # 05-08-1510) .400* (10.160) MAX 8 7 6 5 1 2 3 4 .255 ± .015* (6.477 ± 0.381) .300 – .325 (7.620 – 8.255) .008 – .015 (0.203 – 0.381) ( +.035 .325 –.015 8.255 +0.889 –0.381 NOTE: 1. DIMENSIONS ARE
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254mm)
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Untitled
Abstract: No abstract text available
Text: LT1169 Dual Low Noise, Picoampere Bias Current, JFET Input Op Amp DESCRIPTIO U FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ Input Bias Current, Warmed Up: 20pA Max 100% Tested Low Voltage Noise: 8nV/√Hz Max S8 and N8 Package Standard Pinout Very Low Input Capacitance: 1.5pF
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LT1169
110kHz,
LT1113
LT1462
LT1464
95035-7417q
434-0507q
1169fa
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IC OP AMP for Piezoelectric transducers
Abstract: hydrophone transducer LT1169CS8 servo accelerometer 1N914 2N3904 LT1113 LT1169 LT1169CN8 S1336-5BK
Text: LT1169 Dual Low Noise, Picoampere Bias Current, JFET Input Op Amp U DESCRIPTIO FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ Input Bias Current, Warmed Up: 20pA Max 100% Tested Low Voltage Noise: 8nV/√Hz Max S8 and N8 Package Standard Pinout Very Low Input Capacitance: 1.5pF
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LT1169
110kHz,
LT1113
LT1462
LT1464
95035-7417q
434-0507q
1169fa
IC OP AMP for Piezoelectric transducers
hydrophone transducer
LT1169CS8
servo accelerometer
1N914
2N3904
LT1113
LT1169
LT1169CN8
S1336-5BK
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4384
Abstract: 7272 LND150N8
Text: Package Outlines TO-243AA SOT-89:N8 0.177 ± 0.004 (4.4958 ± 0.1016) 0.068 ± 0.004 (1.7272 ± 0.1016) 0.059 ± 0.004 (1.4986 ± 0.1016) D A D1 0.161 ± 0.006 (4.0894 ± 0.1524) H 0.096 ± 0.006 (2.4384 ± 0.1524) E 0.041 ± 0.006 (1.0414 ± 0.1524) L 0.0165 ± 0.0025
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O-243AA
OT-89
LND150N8
4384
7272
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RS468
Abstract: transistor dg sot-23 BENT LEAD transistor TO-92 Outline Dimensions P005 n7 transistor P012 B W4 Transistor GP007 transistor W4 sot-23
Text: Package Options TO-39 N2, B TO-52 (N9) TO-92 (N3, L, LL) DIP Plastic (N4, N6, NA, J, P) DIP Ceramic (NC, N7, P, C) Side Braze (NC, N7) TO-220 (N5) 7-Pin TO-220 (K2) TO-243 AA (SOT-89) (N8) SOT-23 (K1) TO-3 (N1) Die in Wafer Form (NW, XW) Die on adhesive
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O-220
O-243
OT-89)
OT-23
RS468
transistor dg sot-23
BENT LEAD transistor TO-92 Outline Dimensions
P005
n7 transistor
P012
B W4 Transistor
GP007
transistor W4 sot-23
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Untitled
Abstract: No abstract text available
Text: E-TA THERMAL VARIABLE ATTENUATORS •FEATURES ■APPLICATIONS ● Flat VSWR characteristic to the temperature change. ● Linear attenuation characteristic to temperature fluctuation. ● RoHS compliant. ● Temperature compensation of microwave high power
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E-TA3216
E-TA2012
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8 lead soic-n package R8
Abstract: ADM705 ADM707 adm705arzreel1 ADM706 MAX705 MAX708 MO-187-AA Package BA RM-8 ADM708ANZ
Text: Low Cost Microprocessor Supervisory Circuits ADM705/ADM706/ADM707/ADM708 FUNCTIONAL BLOCK DIAGRAMS WATCHDOG INPUT WDI WATCHDOG TRANSITION DETECTOR VCC 250 A MR 4.65V* ADM705/ ADM706 POWER-FAIL INPUT (PFI) WATCHDOG OUTPUT (WDO) RESET AND WATCHDOG TIMEBASE
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ADM705/ADM706/ADM707/ADM708
ADM705/
ADM706
ADM705)
ADM706)
ADM705/ADM706
ADM707/
ADM708
8 lead soic-n package R8
ADM705
ADM707
adm705arzreel1
ADM706
MAX705
MAX708
MO-187-AA Package
BA RM-8
ADM708ANZ
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Untitled
Abstract: No abstract text available
Text: THERMAL VARIABLE ATTENUATORS E-TA •FEATURES ■APPLICATIONS ● Flat VSWR characteristic to the temperature change. ● Linear attenuation characteristic to temperature fluctuation. ● RoHS compliant. ● Temperature compensation of microwave high power
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E-TA3216
E-TA2012
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Untitled
Abstract: No abstract text available
Text: FDP038AN06A0 / FDI038AN06A0 N-Channel PowerTrench MOSFET 60 V, 80 A, 3.8 mΩ Features Applications • RDS on = 3.5 mΩ ( Typ.) @ VGS = 10 V, ID = 80 A • Synchronous Rectification for ATX / Server / Telecom PSU • QG(tot) = 96 nC ( Typ.) @ VGS = 10 V
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FDP038AN06A0
FDI038AN06A0
O-220
FDP038AN06A0
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FDM606P
Abstract: m073
Text: FDM606P P-Channel 1.8V Logic Level Power Trench MOSFET General Description Features This P-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching
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FDM606P
FDM606P
m073
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Untitled
Abstract: No abstract text available
Text: FDP070AN06A0 N-Channel PowerTrench MOSFET 60 V, 80 A, 7 mΩ Features Applications • RDS on = 6.1 mΩ (Typ.) @ VGS = 10 V, ID = 80 A • Synchronous Rectification for ATX / Server / Telecom PSU • Qg(tot) = 51 nC (Typ.) @ VGS = 10 V • Battery Protection Circuit
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FDP070AN06A0
O-220
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FDP2532
Abstract: FDP2532 Mosfet
Text: FDP2532 / FDB2532 N-Channel PowerTrench MOSFET 150 V, 79 A, 16 mΩ Features Applications • RDS on = 14 mΩ ( Typ.) @ VGS = 10 V, ID = 33 A • Consumer Appliances • QG(tot) = 82 nC ( Typ.) @ VGS = 10 V • Synchronous Rectification • Low Miller Charge
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FDP2532
FDB2532
O-220
FDP2532 Mosfet
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Untitled
Abstract: No abstract text available
Text: FDD16AN08A0 N-Channel PowerTrench MOSFET 75 V, 50 A, 16 mΩ Features Applications • RDS on = 13 mΩ ( Typ.) @ VGS = 10 V, ID = 50 A • Synchronous Rectification • QG(tot) = 31 nC ( Typ.) @ VGS = 10 V • Battery Protection Circuit • Low Miller Charge
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FDD16AN08A0
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IC OP AMP for Piezoelectric transducers
Abstract: servo accelerometer aCCELEROMETER APPLICATION CIRCUIT accelerometer b 0P215
Text: r j uTECHNOLOGY r m F€RTUR€S • ■ ■ ■ ■ ■ ■ ■ ■ ■ Input Bias Current, W arm ed Up: 20pA Max 100% Tested Low Voltage Noise: 8nV/VHz Max S8 and N8 Package Standard Pinout Very Low Input Capacitance: 1.5pF Voltage Gain: 1.2 Million Min
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LT1169
LT1169
1013Q)
330Hz
LT1113
LT1462
LT1464
CA95035-7417«
IC OP AMP for Piezoelectric transducers
servo accelerometer
aCCELEROMETER APPLICATION CIRCUIT
accelerometer b
0P215
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Untitled
Abstract: No abstract text available
Text: r r u r m TECHNOLOGY _LT1169 Dual Low Noise, P ic o a m p e re Bias C urrent, JFET In p u t O p A m p F€RTUR€S DCSCRIPTIOn • Input Bias Current, W arm ed Up: 20pA Max ■ 100% Tested Low Voltage Noise: 8nV/Vflz Max ■ S8 and N8 Package Standard Pinout
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LT1169
LT1169
330Hz
LT1113
LT1462
LT1464
CA95035-7417Â
6faLmpoi98REVA
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ba7106
Abstract: No abstract text available
Text: PAL and SECAM discriminator, with switch, for use in delay lines BA7106LS The BA7106LS includes a PAL and SECAM discriminator on a single chip. Dimensions Units : mm BA7106LS (SZIP24) The IC contains a glass delay line amplifier, and an amplifier output switch.
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BA7106LS
SZIP24)
BA7106LS
SZIP24
VTH21
hys24
ba7106
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BA7106LS
Abstract: N4 Amplifier GV-28 SZIP24 discriminator 5.5 Mhz ba7106
Text: BA7106LS PAL and SECAM discriminator, with switch, for use in delay lines The BA7106LS includes a PAL and SECAM discriminator on a single chip. Dimensions Units: mm BA7106LS (SZIP24) The IC contains a glass delay line amplifier, and an amplifier output switch.
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BA7106LS
SZIP24
BA7106LS
SZIP24)
0013bQl
Hys24
ZIN12
vin12
vth21
N4 Amplifier
GV-28
discriminator 5.5 Mhz
ba7106
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Untitled
Abstract: No abstract text available
Text: HUF75545P3, HUF75545S3S Semiconductor June 1999 Data Sheet File Num ber 4738.1 75A, 80V, 0.010 Ohm, N-Channel, UltraFET Power MOSFET Packaging Features JEDEC TO-220AB JEDEC TO-263AB SOURCE DRAIN FLANGE • Ultra Low On-Resistance • rDS(ON) = 0.01 O il,
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HUF75545P3,
HUF75545S3S
O-220AB
O-263AB
HUF75545P3
75545P
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76105DK8
Abstract: No abstract text available
Text: HUF76105DK8 S e m ic o n d u c to r October 1998 Data Sheet • Logic Level Gate Drive This N-Channel power MOSFET is manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in
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HUF76105DK8
1-800-4-HARRIS
76105DK8
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