Untitled
Abstract: No abstract text available
Text: FDW2512NZ Dual N-Channel 2.5V Specified PowerTrench MOSFET Features ! 6A, 20V General Description rDS ON = 0.028Ω, VGS = 4.5V This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance
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FDW2512NZ
FDW2512NZ
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2601NZ
Abstract: FDW2601NZ 2601N
Text: FDW2601NZ Dual N-Channel 2.5V Specified PowerTrench MOSFET Features ! 8.2A, 30V General Description rDS ON = 0.015Ω, VGS = 4.5V This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance
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FDW2601NZ
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n mosfet pspice parameters
Abstract: FDW2512NZ 2512nz
Text: FDW2512NZ Dual N-Channel 2.5V Specified PowerTrench MOSFET Features ! 6A, 20V General Description rDS ON = 0.028Ω, VGS = 4.5V This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance
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FDW2512NZ
FDW2512NZ
n mosfet pspice parameters
2512nz
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5e8 marking
Abstract: 66E-3
Text: FDW2601NZ Dual N-Channel 2.5V Specified PowerTrench MOSFET Features ! 8.2A, 30V General Description rDS ON = 0.015Ω, VGS = 4.5V This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance
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FDW2601NZ
FDW2601NZ
5e8 marking
66E-3
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Untitled
Abstract: No abstract text available
Text: FDW2512NZ Dual N-Channel 2.5V Specified PowerTrench MOSFET Features ! 6A, 20V General Description rDS ON = 0.028Ω, VGS = 4.5V This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance
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FDW2512NZ
FDW2512NZ
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2511NZ
Abstract: FDW2511NZ dual mosfet tt 6 pin Diode N7 S2 2511N 6 pin diode n10
Text: FDW2511NZ Dual N-Channel 2.5V Specified PowerTrench MOSFET Features ! 7.1A, 20V General Description rDS ON =0.020Ω, VGS = 4.5V This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance
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FDW2511NZ
FDW2511NZ
2511NZ
dual mosfet tt 6 pin
Diode N7 S2
2511N
6 pin diode n10
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Untitled
Abstract: No abstract text available
Text: May 2008 FDW2601NZ Dual N-Channel 2.5V Specified PowerTrench MOSFET Features 8.2A, 30V tmM General Description rDS ON = 0.015Ω, VGS = 4.5V This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance
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FDW2601NZ
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FDW2512NZ
Abstract: KP198
Text: May 2008 FDW2512NZ Dual N-Channel 2.5V Specified PowerTrench MOSFET Features ! 6A, 20V General Description rDS ON = 0.028Ω, VGS = 4.5V This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance
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FDW2512NZ
FDW2512NZ
KP198
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Untitled
Abstract: No abstract text available
Text: FDW2511NZ Dual N-Channel 2.5V Specified PowerTrench MOSFET Features ! 7.1A, 20V General Description rDS ON =0.020Ω, VGS = 4.5V This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance
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FDW2511NZ
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FDW2601NZ
Abstract: N-Channel 2.5V 2601NZ
Text: May 2008 FDW2601NZ Dual N-Channel 2.5V Specified PowerTrench MOSFET Features ! 8.2A, 30V tmM General Description rDS ON = 0.015Ω, VGS = 4.5V This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance
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FDW2601NZ
FDW2601NZ
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2601NZ
Abstract: 47e3 Diode N7 S2 N9 S2 MARKING DIODE 096E-9 dual mosfet 337 Dual N-Channel 2.5V 17E-3
Text: FDW2601NZ Dual N-Channel 2.5V Specified PowerTrench MOSFET Features ! 8.2A, 30V General Description rDS ON = 0.015Ω, VGS = 4.5V This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance
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FDW2601NZ
2601NZ
47e3
Diode N7 S2
N9 S2 MARKING DIODE
096E-9
dual mosfet 337
Dual N-Channel 2.5V
17E-3
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Untitled
Abstract: No abstract text available
Text: FDW2517NZ Dual N-Channel 2.5V Specified Trench MOSFET General Description Features This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching
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Untitled
Abstract: No abstract text available
Text: FDW2511NZ Dual N-Channel 2.5V Specified PowerTrench MOSFET Features ! 7.1A, 20V General Description rDS ON =0.020Ω, VGS = 4.5V This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance
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2511NZ
Abstract: m068 BV150 FDW2511NZ n10 diode 51E3 KP17 Diode N7 S2
Text: May 2008 FDW2511NZ Dual N-Channel 2.5V Specified PowerTrench MOSFET Features ! 7.1A, 20V tmM General Description rDS ON =0.020Ω, VGS = 4.5V This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance
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FDW2511NZ
FDW2511NZ
2511NZ
m068
BV150
n10 diode
51E3
KP17
Diode N7 S2
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FDS8878
Abstract: FDS8978
Text: FDS8978 N-Channel PowerTrench MOSFET tm 30V, 7.5A, 18mΩ Features General Description rDS on = 18mΩ, VGS = 10V, ID = 7.5A This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM
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Abstract: No abstract text available
Text: FDS8978 N-Channel PowerTrench MOSFET 30V, 7.5A, 18mΩ Features General Description ̈ rDS on = 18mΩ, VGS = 10V, ID = 7.5A This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM
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FDS8978
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FDS8878
Abstract: FDS8978 fds897
Text: FDS8978 N-Channel PowerTrench MOSFET 30V, 7.5A, 18mΩ Features General Description rDS on = 18mΩ, VGS = 10V, ID = 7.5A This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM
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FDS8978
FDS8978
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fds897
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turck 8 pin m12 connector
Abstract: OMRON RM201 marking code A1W SMC ex250 AN203 MATSUSHITA MATSUA compressor wiring diagram frc100a solenoid valve 24v JIS-X-5101 eb142
Text: CAT.ES11-81 A 5 Port Solenoid Valve Series SV New Concept Connector Type Manifold Series Series SV1000/2000/3000/4000 SV1000/2000/3000/4000 The use of multi-pin connectors to replace wiring inside manifold blocks provides flexibility when adding stations or changing manifold configuration.
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ES11-81
SV1000/2000/3000/4000
turck 8 pin m12 connector
OMRON RM201
marking code A1W
SMC ex250
AN203 MATSUSHITA
MATSUA compressor wiring diagram
frc100a
solenoid valve 24v
JIS-X-5101
eb142
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B1583
Abstract: xilinx xcr3512xl DS012 DS023 FG324 FT256 PQ208 XCR3512XL P12 MARKING DIODE cpld table
Text: R XCR3512XL: 512 Macrocell CPLD DS081 v1.7 February 13, 2004 14 Product Specification Features Description • • • • • The XCR3512XL is a 3.3V, 512 macrocell CPLD targeted at power sensitive designs that require leading edge programmable logic solutions. A total of 32 function blocks provide
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B1583
xilinx xcr3512xl
DS012
DS023
FG324
FT256
PQ208
P12 MARKING DIODE
cpld table
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Abstract: No abstract text available
Text: R XCR3512XL: 512 Macrocell CPLD DS081 v1.6 September 23, 2003 14 Product Specification Features Description • • • • • The XCR3512XL is a 3.3V, 512 macrocell CPLD targeted at power sensitive designs that require leading edge programmable logic solutions. A total of 32 function blocks provide
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Abstract: No abstract text available
Text: R XCR3512XL: 512 Macrocell CPLD DS081 v1.8 January 5, 2005 14 Product Specification Features Description • • • • • The XCR3512XL is a 3.3V, 512 macrocell CPLD targeted at power sensitive designs that require leading edge programmable logic solutions. A total of 32 function blocks provide
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XCR3384XL-10TQ144C
Abstract: FT256 t11 2581 DS012 DS023 FG324 PQ208 TQ144 XCR3384XL DS024
Text: R XCR3384XL: 384 Macrocell CPLD DS024 v1.8 February 13, 2004 14 Preliminary Product Specification Features Description • • • • • The XCR3384XL is a 3.3V, 384 macrocell CPLD targeted at power sensitive designs that require leading edge programmable logic solutions. A total of 24 function blocks provide
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DS024
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TQ144
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FT256
t11 2581
DS012
DS023
FG324
PQ208
DS024
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Untitled
Abstract: No abstract text available
Text: R XCR3384XL: 384 Macrocell CPLD DS024 v1.7 August 21, 2003 14 Preliminary Product Specification Features Description • • • • • The XCR3384XL is a 3.3V, 384 macrocell CPLD targeted at power sensitive designs that require leading edge programmable logic solutions. A total of 24 function blocks provide
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DS024
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TQ144
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XCR3384XL-10TQG144C
Abstract: marking W17 diode XCR3384XL-12PQG208C XCR3384XL-10PQG208C FG324 FT256 PQ208 TQ144 DS012 DS023
Text: XCR3384XL: 384 Macrocell CPLD R DS024 v2.0 March 31, 2006 14 Product Specification Features Description • • • • • The CoolRunner XPLA3 XCR3384XL device is a 3.3V, 384 macrocell CPLD targeted at power sensitive designs that require leading edge programmable logic solutions. A
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DS024
XCR3384XL
XCR3384XL-10TQG144C
marking W17 diode
XCR3384XL-12PQG208C
XCR3384XL-10PQG208C
FG324
FT256
PQ208
TQ144
DS012
DS023
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