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    NAND08GW Price and Stock

    Micron Technology Inc NAND08GW3D2AN6E

    IC FLASH 8GBIT PARALLEL 48TSOP
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    DigiKey NAND08GW3D2AN6E Tray 576
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    Micron Technology Inc NAND08GW3F2AN6E

    IC FLASH 8GBIT PARALLEL 48TSOP
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    DigiKey NAND08GW3F2AN6E Tray
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    Micron Technology Inc NAND08GW3C2BN6E

    IC FLASH 8GBIT PARALLEL 48TSOP
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    DigiKey NAND08GW3C2BN6E Tray
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    Micron Technology Inc NAND08GW3B4CZL6E

    NAND Flash Parallel 3V/3.3V 8Gbit 1G x 8bit 25us 52-Pin ULGA Tray - Trays (Alt: NAND08GW3B4CZL6E)
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    Avnet Americas NAND08GW3B4CZL6E Tray 18 Weeks 672
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    Numonyx Memory Solutions NAND08GW3B2CN6E

    4 Gbit, 8 Gbit, 2112 byte/1056 word page multiplane architecture, 1.8 V or 3 V, NAND Flash memories
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    Win Source Electronics NAND08GW3B2CN6E 354
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    NAND08GW Datasheets (10)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    NAND08GW3B2A Numonyx 4 Gbit, 8 Gbit, 2112 Byte/1056 Word Page 3V, NAND Flash Memories Original PDF
    NAND08GW3B2A STMicroelectronics 4 Gbit, 8 Gbit, 2112 Byte/1056 Word Page 3V, NAND Flash Memories Original PDF
    NAND08GW3B2AN1E Numonyx 4 Gbit, 8 Gbit, 2112 Byte/1056 Word Page 3V, NAND Flash Memories Original PDF
    NAND08GW3B2AN1E STMicroelectronics 4 Gbit, 8 Gbit, 2112 Byte/1056 Word Page 3V, NAND Flash Memories Original PDF
    NAND08GW3C2A Numonyx 8/16 Gbit, 2112 byte page, 3 V supply, multilevel, multiplane, NAND Flash memory Original PDF
    NAND08GW3C2AN1E Numonyx 8/16 Gbit, 2112 byte page, 3 V supply, multilevel, multiplane, NAND Flash memory Original PDF
    NAND08GW3C2B Numonyx 8 or 16 Gbit, 2112 byte page, 3 V supply, multilevel, multiplane, NAND Flash memory Original PDF
    NAND08GW3C2BN1E Numonyx 8 or 16 Gbit, 2112 byte page, 3 V supply, multilevel, multiplane, NAND Flash memory Original PDF
    NAND08GW3D2AN6E Micron Technology Integrated Circuits (ICs) - Memory - IC FLASH 8G PARALLEL 48TSOP Original PDF
    NAND08GW3F2AN6E Numonyx Memory, Integrated Circuits (ICs), IC FLASH 8GBIT 48TSOP Original PDF

    NAND08GW Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    C7478

    Abstract: No abstract text available
    Text: NAND08GW3F2B 8-Gbit, 4224-byte page, 3 V supply, multiplane architecture, single level cell NAND flash memory Preliminary Data Features • High density single level cell SLC flash memory – 8 Gbits of memory array – Cost-effective solutions for mass storage


    Original     		PDF NAND08GW3F2B 4224-byte C7478

    LGA52

    Abstract: LGA-52 ULGA52 nand 16g 16G nand flash NAND08GW3C2B NAND16GW3 NAND16GW3C4A NAND16GW3C4B
    Text: NAND08GW3C2B NAND16GW3C4B 8 or 16 Gbit, 2112 byte page, 3 V supply, multilevel, multiplane, NAND Flash memory Target Specification Features • High density multilevel cell MLC Flash memory – Up to 16 Gbit memory array – Up to 512 Mbit spare area – Cost-effective solutions for mass storage


    Original     		PDF NAND08GW3C2B NAND16GW3C4B TSOP48 LGA52 LGA-52 ULGA52 nand 16g 16G nand flash NAND08GW3C2B NAND16GW3 NAND16GW3C4A NAND16GW3C4B

    JESD97

    Abstract: NAND04GW3B2B NAND08GW3B2A NAND04
    Text: NAND04GW3B2B NAND08GW3B2A 4 Gbit, 8 Gbit, 2112 Byte/1056 Word Page 3V, NAND Flash Memories PRELIMINARY DATA Feature summary • High density NAND Flash Memory – up to 8 Gbit memory array – Up to 256 Mbit spare area – Cost effective solution for mass storage


    Original     		PDF NAND04GW3B2B NAND08GW3B2A Byte/1056 JESD97 NAND04GW3B2B NAND08GW3B2A NAND04

    block code error management, verilog

    Abstract: NAND08GW3B2A bad block block code error management, verilog source code JESD97 NAND04GW3B2B
    Text: NAND04GW3B2B NAND08GW3B2A 4 Gbit, 8 Gbit, 2112 Byte/1056 Word Page 3V, NAND Flash Memories Features • High density NAND Flash Memory – up to 8 Gbit memory array – Up to 256 Mbit spare area – Cost effective solution for mass storage applications ■


    Original     		PDF NAND04GW3B2B NAND08GW3B2A Byte/1056 block code error management, verilog NAND08GW3B2A bad block block code error management, verilog source code JESD97 NAND04GW3B2B

    LGA52

    Abstract: LGA-52 NAND16GW3C4A NAND08GW3C2A 16G nand JESD97 NAND16GW3 NS4258
    Text: NAND08GW3C2A NAND16GW3C4A 8/16 Gbit, 2112 byte page, 3 V supply, multilevel, multiplane, NAND Flash memory Features • High density multilevel cell MLC Flash memory – Up to 16 Gbit memory array – Up to 512 Mbit spare area – Cost-effective solutions for mass storage


    Original     		PDF NAND08GW3C2A NAND16GW3C4A LGA52 LGA-52 NAND16GW3C4A NAND08GW3C2A 16G nand JESD97 NAND16GW3 NS4258

    NUMONYX

    Abstract: JESD97 NAND04GW3B2B NAND08GW3B2A
    Text: NAND04GW3B2B NAND08GW3B2A 4 Gbit, 8 Gbit, 2112 Byte/1056 Word Page 3V, NAND Flash Memories Features • High density NAND Flash Memory – up to 8 Gbit memory array – Up to 256 Mbit spare area – Cost effective solution for mass storage applications ■


    Original     		PDF NAND04GW3B2B NAND08GW3B2A Byte/1056 NUMONYX JESD97 NAND04GW3B2B NAND08GW3B2A

    NAND08GW3F2A

    Abstract: transistor sr61 NAND08GW3F NAND16GW3F2A A20-A32 transistor SR60
    Text: NAND08GW3F2A NAND16GW3F2A 8-Gbit, 16-Gbit, 4224-byte page, 3 V supply, multiplane architecture, SLC NAND flash memories Preliminary Data Features • High density SLC NAND flash memory – 8, 16 Gbits of memory array – Cost-effective solutions for mass storage


    Original     		PDF NAND08GW3F2A NAND16GW3F2A 16-Gbit, 4224-byte transistor sr61 NAND08GW3F NAND16GW3F2A A20-A32 transistor SR60

    NAND16GW3D2A

    Abstract: NAND32GW3D4A NAND08GW3D2A
    Text: NAND08GW3D2A NAND16GW3D2A 8-Gbit, 16-Gbit, 4224-byte page, multilevel cell, 3 V supply, multiplane, NAND flash memory Preliminary Data Features • High density multilevel cell MLC flash memory – 8, 16 Gbits of memory array – 256, 512 Mbits of spare area


    Original     		PDF NAND08GW3D2A NAND16GW3D2A 16-Gbit, 4224-byte 16-Gbi" NAND16GW3D2A NAND32GW3D4A

    NAND08GW3F2A

    Abstract: NAND08GW3F nand16gw3
    Text: NAND08GW3F2A NAND16GW3F2A 8-Gbit, 16-Gbit, 4224-byte page, 3 V supply, multiplane architecture, SLC NAND flash memories Preliminary Data Features • High density SLC NAND flash memory – 8, 16 Gbits of memory array – Cost-effective solutions for mass storage


    Original     		PDF NAND08GW3F2A NAND16GW3F2A 16-Gbit, 4224-byte NAND08GW3F nand16gw3

    NAND08GW3D2A

    Abstract: No abstract text available
    Text: NAND08GW3D2A 8-Gbit, 4224-byte page, 3 V supply, multilevel, multiplane, NAND flash memory Preliminary Data Features • High density multilevel cell MLC flash memory – 8 Gbits of memory array – 256 Mbits of spare area – Cost-effective solutions for mass storage


    Original     		PDF NAND08GW3D2A 4224-byte NAND08GW3D2A

    NAND04

    Abstract: A15-A23
    Text: NAND04GW3C2B NAND08GW3C2B 4-Gbit, 8-Gbit, 2112-byte page, 3 V supply, multiplane architecture, MLC NAND flash memories Preliminary Data Features • High density multilevel cell MLC flash memory – 4, 8 Gbits of memory array – 256, 512 Mbits of spare area


    Original     		PDF NAND04GW3C2B NAND08GW3C2B 2112-byte NAND04 A15-A23

    package tsop48

    Abstract: LGA52 ai12472 nand flash lga NAND08GW3C2B LGA-52 NAND0
    Text: NAND08GW3C2B 8-Gbit, 2112-byte page, 3 V supply, multilevel, multiplane, NAND flash memory Features • High density multilevel cell MLC flash memory – 8 Gbits of memory array – 512 Mbits of spare area – Cost-effective solutions for mass storage applications


    Original     		PDF NAND08GW3C2B 2112-byte TSOP48 LGA52 package tsop48 ai12472 nand flash lga NAND08GW3C2B LGA-52 NAND0

    LGA52

    Abstract: LGA-52 16gb 8Gb 64 gbit nand flash NAND16GW3C4A TSOP48 outline 16G nand 16G nand flash NS4258 IBIS Models
    Text: NAND08GW3C2A NAND16GW3C4A 8/16 Gbit, 2112 byte page, 3 V supply, multilevel, multiplane, NAND Flash memory Preliminary Data Features • High density multilevel cell MLC Flash memory – Up to 16 Gbit memory array – Up to 512 Mbit spare area – Cost-effective solutions for mass storage


    Original     		PDF NAND08GW3C2A NAND16GW3C4A LGA52 LGA-52 16gb 8Gb 64 gbit nand flash NAND16GW3C4A TSOP48 outline 16G nand 16G nand flash NS4258 IBIS Models

    JESD97

    Abstract: NAND08GW3C2B NAND16GW3C4B 16Gbit
    Text: NAND16GW3C4B 16-Gbit 2 x 8 Gbits , two Chip Enable, 2112-byte page, 3 V supply, multilevel, multiplane, NAND flash memory Preliminary Data Features • High density multilevel cell (MLC) flash memory – 16 Gbits of memory array – 512 Mbits of spare area


    Original     		PDF NAND16GW3C4B 16-Gbit 2112-byte JESD97 NAND08GW3C2B NAND16GW3C4B 16Gbit

    Wear Leveling in Single Level Cell NAND Flash Memory

    Abstract: 4GIT NAND08Gx3C2A NAND04GW3C2A AI07563B bad block management in mlc
    Text: NAND04Gx3C2A NAND08Gx3C2A 4 Gbit, 8 Gbit 2112 Byte Page, 3V, Multi-level NAND Flash Memory Preliminary Data Features summary • High density multi-level Cell MLC NAND Flash memories: – Up to 8 Gbit memory array – Up to 256 Mbit spare area – Cost effective solutions for mass storage


    Original     		PDF NAND04Gx3C2A NAND08Gx3C2A Wear Leveling in Single Level Cell NAND Flash Memory 4GIT NAND08Gx3C2A NAND04GW3C2A AI07563B bad block management in mlc

    LGA-52

    Abstract: LGA52 NAND LGA52 NAND08GW3B2C NAND04GW3B2DN6 NAND08GW3B4C NAND04GW4B2D NAND08GR NAND08GW lga52 footprint
    Text: NAND04G-B2D, NAND08G-BxC 4 Gbit, 8 Gbit, 2112 byte/1056 word page multiplane architecture, 1.8 V or 3 V, NAND Flash memories Preliminary Data Features • High density NAND Flash Memory – Up to 8 Gbit memory array – Cost-effective solution for mass storage


    Original     		PDF NAND04G-B2D, NAND08G-BxC byte/1056 LGA-52 LGA52 NAND LGA52 NAND08GW3B2C NAND04GW3B2DN6 NAND08GW3B4C NAND04GW4B2D NAND08GR NAND08GW lga52 footprint

    HY27UU088G5M

    Abstract: HY27UT084G2M 29f8g08 HY27UH088G2M 29F2G08 HY27UT micron 29F2G08AA HY27UT08 HY27UG084G2M hy27uu
    Text: ST72681 USB 2.0 high-speed Flash drive controller Not For New Design Features • USB 2.0 interface compatible with mass storage device class – Integrated USB 2.0 PHY supporting USB high speed and full speed – Suspend and Resume operations LQFP48 7x7 ■


    Original     		PDF ST72681 LQFP48 HY27UU088G5M HY27UT084G2M 29f8g08 HY27UH088G2M 29F2G08 HY27UT micron 29F2G08AA HY27UT08 HY27UG084G2M hy27uu

    Untitled

    Abstract: No abstract text available
    Text: ST72681 USB 2.0 high-speed Flash drive controller Not For New Design Features • USB 2.0 interface compatible with mass storage device class – Integrated USB 2.0 PHY supporting USB high speed and full speed – Suspend and Resume operations LQFP48 7x7 ■


    Original     		PDF ST72681 LQFP48

    "NAND Flash"

    Abstract: AN1793 NAND01GR3B NAND01GR4B NAND01GW3B NAND01GW4B NAND02GR3B NAND512W3B ST nand
    Text: AN1793 APPLICATION NOTE How to Use the Chip Enable Don’t Care Option in Single Level Cell NAND Flash Memories This Application Note describes how to use the Chip Enable Don’t Care feature, which is available in both the NANDxxx-A and NANDxxx-B families of Single Level Cell SLC NAND Flash memories, and outlines


    Original     		PDF AN1793 128Mbits 25thout "NAND Flash" AN1793 NAND01GR3B NAND01GR4B NAND01GW3B NAND01GW4B NAND02GR3B NAND512W3B ST nand

    NAND512W3A 64MB

    Abstract: STMicroelectronics NAND256W3A VFBGA63 NAND08GW3B USOP48 NAND256W3A F70 Package NAND01GW3B tfbga NAND01GR3B
    Text: NAND Flash memories The core element of a compact audio-player is a NAND Flash, smaller than a stamp, which is capable of storing hours of audio files Because NAND Flash offers higher densities and performances at lower cost, it is ideal for multimedia system


    Original     		PDF FLNANDF0106 NAND512W3A 64MB STMicroelectronics NAND256W3A VFBGA63 NAND08GW3B USOP48 NAND256W3A F70 Package NAND01GW3B tfbga NAND01GR3B

    verilog code hamming

    Abstract: c1823.zip an1823 hamming code 512 bytes SLC nand hamming code 512 bytes flash hamming ecc STMicroelectronics NAND256W3A hamming 7 bit hamming code error correction code
    Text: AN1823 APPLICATION NOTE Error Correction Code in Single Level Cell NAND Flash Memories This Application Note describes how to implement an Error Correction Code ECC in ST Single Level Cell (SLC) NAND Flash memories, that can detect 2-bit errors and correct 1-bit errors per 256 or 512 Bytes.


    Original     		PDF AN1823 Byte/1056 verilog code hamming c1823.zip an1823 hamming code 512 bytes SLC nand hamming code 512 bytes flash hamming ecc STMicroelectronics NAND256W3A hamming 7 bit hamming code error correction code

    E2 nand flash

    Abstract: st nand flash application note NAND512R4A NAND512W3A NAND256W3A NAND512W3B AN1759 NAND128R3A NAND128R4A NAND128W3A
    Text: AN1759 APPLICATION NOTE How to Connect Single Level Cell NAND Flash Memories to Build Storage Modules This application note explains how to connect two or more Single Level Cell NAND Flash memories to a microcontroller system bus, to build storage modules.


    Original     		PDF AN1759 NAND128R3A NAND256R3A NAND512R3A NAND01GR3A NAND128W3A NAND256W3A NAND512W3A NAND01GW3A NAND128R4A E2 nand flash st nand flash application note NAND512R4A NAND512W3A NAND256W3A NAND512W3B AN1759 NAND128R3A NAND128R4A NAND128W3A

    NAND FLASH TRANSLATION LAYER FTL

    Abstract: "flash translation layer" Flash Translation Layer NAND02GW3B NAND02GW4B Wear Leveling in Single Level Cell NAND Flash Memory AN1821 NAND512R3B NAND512W3B AN1820
    Text: AN1821 APPLICATION NOTE Garbage Collection in Single Level Cell NAND Flash Memories This Application Note describes the Garbage Collection algorithm that ST recommends to implement in the Flash Translation Layer FTL software for NAND Flash memories. INTRODUCTION


    Original     		PDF AN1821 NAND FLASH TRANSLATION LAYER FTL "flash translation layer" Flash Translation Layer NAND02GW3B NAND02GW4B Wear Leveling in Single Level Cell NAND Flash Memory AN1821 NAND512R3B NAND512W3B AN1820

    AN1822

    Abstract: NAND512W3A 64MB "nand flash memory" fat32 Wear Leveling in Single Level Cell NAND Flash Memory error free nand NAND FLASH 64MB Wear Leveling in Single Level Cell NAND Flash memories leveling FAT32 FLASH TRANSLATION LAYER FTL
    Text: AN1822 APPLICATION NOTE Wear Leveling in Single Level Cell NAND Flash Memories This Application Note describes the Wear Leveling algorithm that ST recommends to implement in the Flash Translation Layer FTL software for NAND Flash memories. INTRODUCTION In ST NAND Flash memories each physical block can be programmed or erased reliably over 100,000


    Original     		PDF AN1822 AN1822 NAND512W3A 64MB "nand flash memory" fat32 Wear Leveling in Single Level Cell NAND Flash Memory error free nand NAND FLASH 64MB Wear Leveling in Single Level Cell NAND Flash memories leveling FAT32 FLASH TRANSLATION LAYER FTL