NDB506B Search Results

NDB506B Datasheets (6)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
NDB506B		National Semiconductor	N-Channel Enhancement Mode Field Effect Transistor		Scan	PDF
NDB506B		National Semiconductor	TO-263AB DMOS Power MOSFET		Scan	PDF
NDB506BE		National Semiconductor	TO-263AB DMOS Power MOSFET		Scan	PDF
NDB506BEL		National Semiconductor	TO-263AB Logic Level DMOS Power MOSFETS		Scan	PDF
NDB506BL		National Semiconductor	N-Channel Logic Level Enhancement Mode Field Effect Transistor		Scan	PDF
NDB506BL		National Semiconductor	TO-263AB Logic Level DMOS Power MOSFETS		Scan	PDF

NDB506B Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
SSP35n03 Abstract: bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent Text: Cross Reference Guide Industry 1.5KE100A 1.5KE100CA 1.5KE10A 1.5KE10CA 1.5KE110A 1.5KE110CA 1.5KE11A 1.5KE11CA 1.5KE120A 1.5KE120CA 1.5KE12A 1.5KE12CA 1.5KE130A 1.5KE130CA 1.5KE13A 1.5KE13CA 1.5KE150A 1.5KE150CA 1.5KE15A 1.5KE15CA 1.5KE160A 1.5KE160CA 1.5KE16A	Original	5KE100A 5KE100CA 5KE10A 5KE10CA 5KE110A 5KE110CA 5KE11A 5KE11CA 5KE120A 5KE120CA SSP35n03 bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent	PDF
NDP506A Abstract: zener diode 4B3 NDB506B NDB506A NDP506B Text: National Semiconductor M a y 19 95 " NDP506A / NDP506B NDB506A / NDB506B N-Channel Enhancement Mode Field Effect Transistor General Description These N-Channel enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS technology.	OCR Scan	NDP506A NDP506B NDB506A NDB506B 125-C bSD113D 0D4D21D zener diode 4B3 NDB506B	PDF
NDP506BL Abstract: Zener diode DW NDP506A NDB506AL NDB506BL NDP506AL Text: National Semiconductor" May 1995 NDP506AL / NDP506BL NDB506AL / NDB506BL N-Channel Logic Level Enhancement I ide Field Effect Transistor General Description Features These logic level N-Channel enhancement mode power field effect transistors are produced using	OCR Scan	NDP506AL NDP506BL NDB506AL NDB506BL S01130 0GM0215 bSD1130 Zener diode DW NDP506A NDB506BL	PDF
b527 Abstract: tic 263a NDP506A Text: National Semiconductor” M a y 19 95 NDP506A / NDP506B NDB506A / NDB506B N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-Channel enhancement mode power field • 26 and 24A, 60V. RDS 0N\| = 0.05 and 0.06J2. effect transistors are produced using National's	OCR Scan	NDP506A NDP506B NDB506A NDB506B bSD113D b527 tic 263a	PDF
NDB406B Abstract: NDB406BL ndb706al NDB510AEL NDB510AL NDB510BEL NDB610AEL NDB610AL NDB610BEL NDB610BL Text: _ . m bfiE D Power M O S F E T S continued bSD113Q 23b M N S C S TO-263AB Logic Level DMOS NATL SEMICOND (DISCRETE) N Channel N Channel r DS(OB)@ lo ^ B S (Volts) Min 100 Device Po b (Amps) (Watts) (mfì) (Amps/Volts) Max Max Max NDB710AEL 38 21/5 42 42	OCR Scan	bSD113D O-263AB NDB710AEL NDB710AL NDB710BEL NDB710BL NDB610AEL NDB610AL NDB610BEL NDB610BL NDB406B NDB406BL ndb706al NDB510AEL NDB510AL NDB510BEL	PDF
NDB406B Abstract: NDB605A National Semiconductor Discrete catalog NDB506B NDB510A NDB510AE NDB510B NDB610A NDB610AE NDB610B Text: böE D NATL TO-263AB DMOS SE I UCOND N Channel 100 Device NDB710A Po *D Amps (Watts) (mQ) (Amps/Volts) Max Max Max 38 21/10 42 42 21/10 40 65 13/10 26 (Volts) Min 150 80 80 12/10 NDB606B 24 120 7.5/10 15 150 6.5/10 13 250 4/10 8 300 3.5/10 7 NDB506A 60 NDB708A	OCR Scan	O-263AB bSG113Q NDB710A NDB710AE NDB710B NDB710BE NDB610A NDB610AE NDB610B NDB610BE NDB406B NDB605A National Semiconductor Discrete catalog NDB506B NDB510A NDB510AE NDB510B NDB610A NDB610AE NDB610B	PDF