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Rochester Electronics LLC NDB7052L N-CHANNEL POWER MOSFET
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	NDB7052L	Bulk			365	1 - 10 - 100 - 1000 $0.82 10000 $0.82	Buy Now
Fairchild Semiconductor Corporation NDB7052L
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Quest Components	NDB7052L		492			1 $2.88 10 $2.88 100 $2.88 1000 $1.188 10000 $1.188	Buy Now
Rochester Electronics	NDB7052L		800		1	1 $0.7908 10 $0.7908 100 $0.7434 1000 $0.6722 10000 $0.6722	Buy Now

NDB7052 Datasheets (6)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
NDB7052		Fairchild Semiconductor	N-Channel Enhancement Mode Field Effect Transistor		Original	PDF
NDB7052		Fairchild Semiconductor	N-Channel Enhancement Mode Field Effect Transistor		Scan	PDF
NDB7052		National Semiconductor	N-Channel Enhancement Mode Field Effect Transistor		Scan	PDF
NDB7052L		Fairchild Semiconductor	N-Channel Logic Level Enhancement Mode Field Effect Transistor		Original	PDF
NDB7052L		Fairchild Semiconductor	N-Channel Logic Level Enhancement Mode Field Effect Transistor		Scan	PDF
NDB7052L		National Semiconductor	N-Channel Logic Level Enhancement Mode Field Effect Transistor		Scan	PDF

NDB7052 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
A6069 Abstract: NDP7052L NDB7052L Text: May 1997 NDP7052L / NDB7052L N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These logic level N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density	Original	PDF	NDP7052L NDB7052L A6069 NDB7052L
NDB7052 Abstract: NDP7052 Text: June 1997 NDP7052 / NDB7052 N-Channel Enhancement Mode Field Effect Transistor General Description Features 75 A, 50 V. RDS ON = 0.01 Ω @ VGS= 10 V. These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell	Original	PDF	NDP7052 NDB7052 NDB7052
mosfet cross reference Abstract: SMP40N06 SMP75N06-08 SI9952DY SMP60N03-10L IRFZ44 TO-263 Si9948DY irf1010e equivalent IRLL014N NDT3055L Text: Discrete POWER & Signal Technologies MOSFET Cross Reference Guide Industry Recommended Part Number Fairchild Device Package Industry Recommended Part Number Fairchild Device 2N7000 2N7000 TO-92, N IRF7203 FDS9435A 2N7002 2N7002 SOT-23, N IRF7204 NDS8434A SO-8, P	Original	PDF	2N7000 IRF7203 FDS9435A 2N7002 OT-23, IRF7204 NDS8434A BS170 mosfet cross reference SMP40N06 SMP75N06-08 SI9952DY SMP60N03-10L IRFZ44 TO-263 Si9948DY irf1010e equivalent IRLL014N NDT3055L
SSP35n03 Abstract: bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent Text: Cross Reference Guide Industry 1.5KE100A 1.5KE100CA 1.5KE10A 1.5KE10CA 1.5KE110A 1.5KE110CA 1.5KE11A 1.5KE11CA 1.5KE120A 1.5KE120CA 1.5KE12A 1.5KE12CA 1.5KE130A 1.5KE130CA 1.5KE13A 1.5KE13CA 1.5KE150A 1.5KE150CA 1.5KE15A 1.5KE15CA 1.5KE160A 1.5KE160CA 1.5KE16A	Original	PDF	5KE100A 5KE100CA 5KE10A 5KE10CA 5KE110A 5KE110CA 5KE11A 5KE11CA 5KE120A 5KE120CA SSP35n03 bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent
12SnOFC Abstract: PMC-90 PMC-90 leadframe material 92.5Pb5Sn2.5Ag Tamac4 MKT-TO263A02 pmc90 PMC-90 to-263 RF1S640SM9A FDB2532 Text: Date Created: 12/30/2003 Date Issued: 1/15/2004 PCN # 20040002 FORECAST CHANGE NOTIFICATION This is to inform you that a design and/or process change will be made to the following product s . This notification is for your information and concurrence. This is a preliminary notification. A final PCN will	Original	PDF	fairchildF76143S3S HUF76145S3S HUF76419S3ST HUF76432S3S HUF76439S3S HUF76445S3ST HUF76639S3S HUF76645S3ST ISL9N303AS3 ISL9N306AS3ST 12SnOFC PMC-90 PMC-90 leadframe material 92.5Pb5Sn2.5Ag Tamac4 MKT-TO263A02 pmc90 PMC-90 to-263 RF1S640SM9A FDB2532
NDB7052L Abstract: NDP7052L Text: %/ National Semiconductor~ A p r il 1 9 9 6 A D V A N C E IN F O R M A T IO N NDP7052L / NDB7052L N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These logic level N-Channel enhancem ent m ode p o w e r fie ld effect transistors are produced using	OCR Scan	PDF	NDP7052L/ NDB7052L bSD113D NDP7052L
p705 Abstract: C5057 Text: FAIRCHILD J u n e1997 MICONDUCTOR -m NDP7052 / NDB7052 N-Channel Enhancement Mode Field Effect Transistor General Description Features T h e s e N -C hannel e n hance m en t m o de pow er field effect tra nsistors are produced using Fairchild's proprietary, high cell	OCR Scan	PDF	NDP7052 NDB7052 p705 C5057
NDB7052 Abstract: NDP7052 Text: National April 1 9 9 6 ADVANCE INFORMATION Semiconductor” NDP7052/ NDB7052 N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-Channel enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS technology.	OCR Scan	PDF	NDP7052/ NDB7052 bS01130 NDB7052 NDP7052
Untitled Abstract: No abstract text available Text: June 1997 RAIRCHII-D M ICDNDUCTO R ^ NDP7052 / NDB7052 N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process has	OCR Scan	PDF	NDP7052 NDB7052
NDB7052L Abstract: NDP7052L Text: FAIRCHILD iM IC O N D U C T D R M a V 1997 tm NDP7052L / NDB7052L N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These logic level N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary,	OCR Scan	PDF	NDP7052L NDB7052L NDB7052L
NDB7052 Abstract: NDP7052 Text: FAIRCHILD MICQNDUCTDR June 1997 tm NDP7052 / NDB7052 N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process has	OCR Scan	PDF	NDP7052 NDB7052 NDB7052
Untitled Abstract: No abstract text available Text: R A I R C H May 1997 I I- D M ICDNDUCTO R tm NDP7052L / NDB7052L N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These logic level N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary,	OCR Scan	PDF	NDP7052L NDB7052L
Untitled Abstract: No abstract text available Text: FA IR C H ILD •MICONDUCTOR M ay1997 tm NDP7052L/ NDB7052L N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These logic level N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary,	OCR Scan	PDF	y1997 NDP7052L/ NDB7052L DP7052L