NDB7061 Search Results

NDB7061 Datasheets (6)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
NDB7061		Fairchild Semiconductor	N-Channel Enhancement Mode Field Effect Transistor		Original	PDF
NDB7061		National Semiconductor	N-Channel Enhancement Mode Field Effect Transistor		Original	PDF
NDB7061		National Semiconductor	N-Channel Enhancement Mode Field Effect Transistor		Scan	PDF
NDB7061L		Fairchild Semiconductor	N-Channel Logic Level Enhancement Mode Field Effect Transistor		Original	PDF
NDB7061L		National Semiconductor	N-Channel Logic Level Enhancement Mode Field Effect Transistor		Original	PDF
NDB7061L		National Semiconductor	N-Channel Logic Level Enhancement Mode Field Effect Transistor		Scan	PDF

NDB7061 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
NDB7061 Abstract: NDP7061 64a through hole diode Text: N May 1996 NDP7061 / NDB7061 N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-Channel enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS technology. This very high density process is especially tailored	Original	NDP7061 NDB7061 NDB7061 64a through hole diode	PDF
zener diode 3.0 b2 Abstract: m 9835 CBVK741B019 EO70 F63TNR FDP7060 L86Z NDB7061L NDP4060L NDP7061L Text: June 1996 NDP7061L / NDB7061L N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These logic level N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density	Original	NDP7061L NDB7061L zener diode 3.0 b2 m 9835 CBVK741B019 EO70 F63TNR FDP7060 L86Z NDB7061L NDP4060L	PDF
CBVK741B019 Abstract: EO70 F63TNR FDP7060 L86Z NDB7061L NDP4060L NDP7061L Text: June 1996 NDP7061L / NDB7061L N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These logic level N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density	Original	NDP7061L NDB7061L CBVK741B019 EO70 F63TNR FDP7060 L86Z NDB7061L NDP4060L	PDF
NDB7061L Abstract: NDP7061L Text: N June 1996 NDP7061L / NDB7061L N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These logic level N-Channel enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS	Original	NDP7061L NDB7061L NDB7061L	PDF
CBVK741B019 Abstract: EO70 F63TNR FDP7060 L86Z NDB7061 NDP4060L NDP7061 Text: May 1996 NDP7061 / NDB7061 N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is	Original	NDP7061 NDB7061 CBVK741B019 EO70 F63TNR FDP7060 L86Z NDB7061 NDP4060L	PDF
zener diode 3.0 b2 Abstract: zener diodes color coded BE 64A m 9835 FDP7060 L86Z NDB7061 NDP4060L NDP7061 CBVK741B019 Text: May 1996 NDP7061 / NDB7061 N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is	Original	NDP7061 NDB7061 zener diode 3.0 b2 zener diodes color coded BE 64A m 9835 FDP7060 L86Z NDB7061 NDP4060L CBVK741B019	PDF
IRFZ44N complementary Abstract: IRF3205 COMPLEMENTARY IRF3205 application a/surface mount IRFZ44N NBP6060 IRF3205 TO-220 philips 435-2 BUZ110S HRF3205 harris 4365 Text: 39460.3 - UltraFET Cross LC 1/22/98 10:42 AM Page 1 55V UltraFET MOSFETs Competitive Cross Reference HARRIS RECOMMENDED PART NUMBER PART NUMBER PACKAGE COMPETITOR FILE NUMBER HARRIS RECOMMENDED PART NUMBER PART NUMBER PACKAGE COMPETITOR FILE NUMBER BUK7508-55	Original	BUK7508-55 BUK7514-55A BUK7524-55A BUK7530-55A BUK7570-55A BUZ100S BUZ102S BUZ110S BUZ111S IRF1010N IRFZ44N complementary IRF3205 COMPLEMENTARY IRF3205 application a/surface mount IRFZ44N NBP6060 IRF3205 TO-220 philips 435-2 HRF3205 harris 4365	PDF
mosfet cross reference Abstract: SMP40N06 SMP75N06-08 SI9952DY SMP60N03-10L IRFZ44 TO-263 Si9948DY irf1010e equivalent IRLL014N NDT3055L Text: Discrete POWER & Signal Technologies MOSFET Cross Reference Guide Industry Recommended Part Number Fairchild Device Package Industry Recommended Part Number Fairchild Device 2N7000 2N7000 TO-92, N IRF7203 FDS9435A 2N7002 2N7002 SOT-23, N IRF7204 NDS8434A SO-8, P	Original	2N7000 IRF7203 FDS9435A 2N7002 OT-23, IRF7204 NDS8434A BS170 mosfet cross reference SMP40N06 SMP75N06-08 SI9952DY SMP60N03-10L IRFZ44 TO-263 Si9948DY irf1010e equivalent IRLL014N NDT3055L	PDF
SSP35n03 Abstract: bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent Text: Cross Reference Guide Industry 1.5KE100A 1.5KE100CA 1.5KE10A 1.5KE10CA 1.5KE110A 1.5KE110CA 1.5KE11A 1.5KE11CA 1.5KE120A 1.5KE120CA 1.5KE12A 1.5KE12CA 1.5KE130A 1.5KE130CA 1.5KE13A 1.5KE13CA 1.5KE150A 1.5KE150CA 1.5KE15A 1.5KE15CA 1.5KE160A 1.5KE160CA 1.5KE16A	Original	5KE100A 5KE100CA 5KE10A 5KE10CA 5KE110A 5KE110CA 5KE11A 5KE11CA 5KE120A 5KE120CA SSP35n03 bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent	PDF
diode 8109 Abstract: DDH0312 NDB7061L NDP7061L W9 diode Text: MCE N a t i o n a l Semiconductor • J u n e 1996 " NDP7061L/ NDB7061L N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These logic level N-Channel enhancement mode power field effect transistors are produced using	OCR Scan	NDP7061L/ NDB7061L bSD113D 004031b bS01130 diode 8109 DDH0312 NDP7061L W9 diode	PDF
Untitled Abstract: No abstract text available Text: May 1996 N NDP7061 / NDB7061 N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-Channel enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS technology. This very high density process is especially tailored	OCR Scan	NDP7061 NDB7061	PDF
NDB7061 Abstract: NDP7061 LD 8105 d0403 Text: National Semiconductor" M ay 1 9 9 6 NDP7061 / NDB7061 N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-Channel enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS technology.	OCR Scan	NDP7061 NDB7061 Ru99ed D04031L LD 8105 d0403	PDF
transistor FS 18 SM Abstract: No abstract text available Text: June 1996 N NDP7061 L / NDB7061L N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These logic level N-Channel enhancem ent m ode pow e r field effect transistors are produced using N ational's proprietary, high cell density, DMOS	OCR Scan	NDP7061 NDB7061L transistor FS 18 SM	PDF
T64A Abstract: NDB7061 NDP7061 Text: M ay 1 9 9 6 N NDP7061 / NDB7061 N-Channel Enhancement M ode Field Effect Transistor General Description Features T h ese N -C hannel en h a n ce m e n t m o d e p o w er field effect transistors are p rod u ced u sin g N ational's proprietary, high cell d en sity, DMOS tech n o lo g y .	OCR Scan	NDP7061 NDB7061 NDB7061 T64A	PDF

Untitled Abstract: No abstract text available Text: June 1996 N NDP7061 L / NDB7061L N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These logic level N-Channel enhancem ent m ode p ow er field effect transistors are produced using National's proprietary, high cell density, DMOS	OCR Scan	NDP7061 NDB7061L P7061L	PDF
NDB7061L Abstract: NDP7061 NDP7061L Text: June 1 9 9 6 N NDP7061 L / N D B 7061L N-Channel Logic Level Enhancement M ode Field Effect Transistor General Description Features T h e se lo g ic le v e l N -C h a n n e l e n h a n c e m e n t m o d e p o w e r field e ffe c t tr a n sisto r s are p r o d u c e d u s in g	OCR Scan	NDP7061 NDB7061L NDP7061L NDB7061L	PDF