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    NDC70 Price and Stock

    onsemi NDC7002N

    MOSFET 2N-CH 50V 0.51A SSOT6
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    DigiKey NDC7002N Reel 91,749 3,000
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    onsemi NDC7001C

    MOSFET N/P-CH 60V 0.51A SSOT6
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    DigiKey NDC7001C Cut Tape 8,746 1
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    onsemi NDC7003P

    MOSFET 2P-CH 60V 0.34A SSOT6
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    DigiKey NDC7003P Cut Tape 7,659 1
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    UMW NDC7002N

    MOSFET 50V 0.51A SOT23-6
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    DigiKey NDC7002N Cut Tape 4,692 1
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    onsemi NDC7002N_SB9G007

    MOSFET 2N-CH 50V 0.51A SSOT6
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    DigiKey NDC7002N_SB9G007 Reel 3,000
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    NDC70 Datasheets (23)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    NDC7001 Fairchild Semiconductor Dual N & P-Channel Enhancement Mode Field Effect Transistor Original PDF
    NDC7001C Fairchild Semiconductor Dual N & P-Channel Enhancement Mode Field Effect Transistor Original PDF
    NDC7001C Fairchild Semiconductor Dual N & P-Channel Enhancement Mode Field Effect Transistor Original PDF
    NDC7001C Fairchild Semiconductor Dual N & P-Channel Enhancement Mode Field Effect T Original PDF
    NDC7001C Toshiba Power MOSFETs Cross Reference Guide Original PDF
    NDC7001C National Semiconductor Dual N & P-Channel Enhancement Mode Field Effect Transistor Scan PDF
    NDC7001C National Semiconductor Dual N & P-Channel Enhancement Mode Field Effect Transistor Scan PDF
    NDC7001C_NL Fairchild Semiconductor Dual N & P Channel Enhancement Mode Field Effect Transistor Original PDF
    NDC7002 Fairchild Semiconductor Dual N-Channel Enhancement Mode Field Effect Transistor Original PDF
    NDC7002N Fairchild Semiconductor Dual N-Channel Enhancement Mode Field Effect Transistor Original PDF
    NDC7002N Fairchild Semiconductor Dual N-Channel Enhancement Mode Field Effect Trans Original PDF
    NDC7002N National Semiconductor Dual N-Channel Enhancement Mode Field Effect Transistor Original PDF
    NDC7002N Toshiba Power MOSFETs Cross Reference Guide Original PDF
    NDC7002N National Semiconductor Dual N-Channel Enhancement Mode Field Effect Transistor Scan PDF
    NDC7002N National Semiconductor Dual N-Channel Enhancement Mode Field Effect Transistor Scan PDF
    NDC7002N_NL Fairchild Semiconductor Dual N-Channel Enhancement Mode Field Effect Transistor Original PDF
    NDC7002N_SB9G007 Fairchild Semiconductor FETs - Arrays, Discrete Semiconductor Products, MOSFET N-CH DUAL 50V 6-SSOT Original PDF
    NDC7003P Fairchild Semiconductor Dual P-Channel PowerTrench MOSFET Original PDF
    NDC7003P Fairchild Semiconductor Dual P-Channel Enhancement Mode Field Effect Transistor Original PDF
    NDC7003P National Semiconductor Dual P-Channel Enhancement Mode Field Effect Transistor Original PDF

    NDC70 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: NDC7001C Dual N & P-Channel Enhancement Mode Field Effect Transistor General Description Features These dual N & P-Channel Enhancement Mode Field Effect Transistors are produced using Fairchild’s proprietary, high cell density, DMOS technology. This very high density process has been designed to


    Original
    NDC7001C PDF

    Untitled

    Abstract: No abstract text available
    Text: NDC7003P Dual P-Channel PowerTrench MOSFET General Description Features These dual P-Channel Enhancement Mode Power Field Effect Transistors are produced using Fairchild’s proprietary Trench Technology. This very high density process has been designed to minimize on-state


    Original
    NDC7003P PDF

    Untitled

    Abstract: No abstract text available
    Text: March 1996 NDC7003P Dual P-Channel Enhancement Mode Field Effect Transistor General Description Features These dual P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This


    Original
    NDC7003P PDF

    NDC7002N

    Abstract: 051A
    Text: N March 1996 NDC7002N Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features These dual N-Channel enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS technology. This very high density process has


    Original
    NDC7002N NDC7002N 051A PDF

    SSOT-6

    Abstract: CBVK741B019 F63TNR FDC633N NDC7003P
    Text: March 1996 NDC7003P Dual P-Channel Enhancement Mode Field Effect Transistor General Description Features These dual P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This


    Original
    NDC7003P SSOT-6 CBVK741B019 F63TNR FDC633N NDC7003P PDF

    Untitled

    Abstract: No abstract text available
    Text: March 1996 NDC7002N Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features 0.51A, 50V, RDS ON = 2Ω @ VGS=10V These dual N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This


    Original
    NDC7002N PDF

    NDC7002N

    Abstract: CBVK741B019 F63TNR FDC633N
    Text: March 1996 NDC7002N Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features 0.51A, 50V, RDS ON = 2Ω @ VGS=10V These dual N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This


    Original
    NDC7002N NDC7002N CBVK741B019 F63TNR FDC633N PDF

    NDC7003P

    Abstract: No abstract text available
    Text: N March 1996 NDC7003P Dual P-Channel Enhancement Mode Field Effect Transistor General Description Features These dual P-Channel enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS technology. This very high density process has been designed


    Original
    NDC7003P NDC7003P PDF

    PL504

    Abstract: PQ508 PC525 PR521 PC515 PD510 PC523 RLZ20C mitac 6120 PR518
    Text: PQ508 SI4435DY PD509 A PL1 A 1 2 6 VADJ_1 5 PQ1B NDC7002N 1 2 VADJ_2 5 PR9 1M 0603 1% 1 2 1 PQ1A NDC7002N 2 2 1 PR6 1M 0603 1% 1 PR7 1M 0603 1% 2 1M 0603 1% 1 PR3 34K 0603 1% PR507 34K 0603 1% 2 PR2 2 PR4 10K 0603B 1% 1 1 1 PC6 1000P 0603B 10%,X7R 2 PR508


    Original
    PQ508 SI4435DY 80UH/33T/D PD506 SFPJ-73 DC2010 PR517 PC524 PL504 PC525 PR521 PC515 PD510 PC523 RLZ20C mitac 6120 PR518 PDF

    Untitled

    Abstract: No abstract text available
    Text: March 1996 NDC7001C Dual N & P-Channel Enhancement Mode Field Effect Transistor General Description Features These dual N and P-channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density


    Original
    NDC7001C PDF

    NDC7003P

    Abstract: No abstract text available
    Text: N March 1996 NDC7003P Dual P-Channel Enhancement Mode Field Effect Transistor General Description Features These dual P-Channel enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS technology. This very high density process


    Original
    NDC7003P NDC7003P PDF

    CBVK741B019

    Abstract: F63TNR FDC633N NDC7001C
    Text: March 1996 NDC7001C Dual N & P-Channel Enhancement Mode Field Effect Transistor General Description Features These dual N and P-channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density


    Original
    NDC7001C CBVK741B019 F63TNR FDC633N NDC7001C PDF

    marking NDC7003P

    Abstract: marking 34A NDC7003P
    Text: NDC7003P Dual P-Channel PowerTrench MOSFET General Description Features These dual P-Channel Enhancement Mode Power Field Effect Transistors are produced using Fairchild’s proprietary Trench Technology. This very high density process has been designed to minimize on-state


    Original
    NDC7003P marking NDC7003P marking 34A NDC7003P PDF

    NDC7001C

    Abstract: siemens
    Text: N March 1996 NDC7001C Dual N & P-Channel Enhancement Mode Field Effect Transistor General Description Features These dual N and P-channel enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS technology. This very high density process has


    Original
    NDC7001C NDC7001C siemens PDF

    NDC7002N

    Abstract: No abstract text available
    Text: March 1996 NDC7002N Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features 0.51A, 50V, RDS ON = 2Ω @ VGS=10V These dual N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This


    Original
    NDC7002N NDC7002N PDF

    NDC7003P

    Abstract: 034A
    Text: National Semiconductor" M arch 1 9 9 6 NDC7003P Dual P-Channel Enhancement Mode Field Effect Transistor General Description Features These dual P-Channel enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS technology.


    OCR Scan
    NDC7003P bSD113D NDC7003P 034A PDF

    Untitled

    Abstract: No abstract text available
    Text: [N March 1996 NDC7003P Dual P-Channel Enhancement Mode Field Effect Transistor General Description Features These d ual P-C hannel e n h a n ce m e n t m od e pow er field effect transistors are produced using N ational's proprietary, high cell density, DMOS technology.


    OCR Scan
    NDC7003P PDF

    Untitled

    Abstract: No abstract text available
    Text: [N M a rc h 1 9 9 6 NDC7001C Dual N & P-Channel Enhancement Mode Field Effect Transistor General Description Features These dual N and P-ehannel en h a n ce m e n t m ode pow er field effect transistors are produced using N ational's proprietary, high cell density, DMOS


    OCR Scan
    NDC7001C C7001C PDF

    NDC7001C

    Abstract: VX25
    Text: National Semiconductor'" M arch 1 9 9 6 NDC7001C Dual N & P-Channel Enhancement Mode Field Effect Transistor General Description Features These dual N and P-channel enhancement mode power field effect transistors are produced using National’s proprietary, high cell density, DMOS


    OCR Scan
    NDC7001C tS0113G Q03T7T3 NDC7001C VX25 PDF

    7001c

    Abstract: No abstract text available
    Text: F A IR C H IL D March 1996 SEMICONDUCTOR i NDC7001C Dual N & P-Channel Enhancement Mode Field Effect Transistor General Description Features These dual N and P-chanrtel enhancem ent mode power field effect transistors are produced using Fairchild's proprietary,


    OCR Scan
    NDC7001C iJ111 7001c PDF

    dc7002n

    Abstract: No abstract text available
    Text: SEM IC ONDUCTO R tm NDC7002N Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features These dual N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This


    OCR Scan
    NDC7002N dc7002n PDF

    ndc7002n

    Abstract: No abstract text available
    Text: National March 1996 Semiconductor” & NDC7002N Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features These dual N-Channel enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS


    OCR Scan
    NDC7002N ndc7002n PDF

    SOT-6 1C

    Abstract: No abstract text available
    Text: PAIRCHII-D M a rc h 1 9 9 6 MICDNDUCTQ R tm NDC7003P Dual P-Channel Enhancement Mode Field Effect Transistor General Description Features These dual P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This


    OCR Scan
    NDC7003P SOT-6 1C PDF

    NDC7002N

    Abstract: Supersot6 SOT-6 1C
    Text: fN M a rc h 1 9 9 6 NDC7002N Dual N-Channel Enhancement M ode Field Effect Transistor General Description Features These dual N -C hannel en h a n ce m e n t m ode pow er field effect transistors are produced using N ational's proprietary, high cell density, DMOS


    OCR Scan
    NDC7002N NDC7002N Supersot6 SOT-6 1C PDF