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    NDS8936 Price and Stock

    onsemi NDS8936

    MOSFET 2N-CH 30V 5.3A 8SOIC
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    DigiKey NDS8936 Digi-Reel 1
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    NDS8936 Cut Tape 1
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    NDS8936 Reel 2,500
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    Quest Components NDS8936 454
    • 1 $1.55
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    Rochester Electronics LLC NDS8936

    MOSFET 2N-CH 30V 5.3A 8SOIC
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    DigiKey NDS8936 Bulk 386
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    Fairchild Semiconductor Corporation NDS8936

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    Bristol Electronics NDS8936 100,016
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    Quest Components NDS8936 2,022
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    NDS8936 576
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    Rochester Electronics NDS8936 6,818 1
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    National Semiconductor Corporation NDS8936

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    Bristol Electronics NDS8936 7,500
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    Fairchild Semiconductor Corporation NDS8936CT

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    Bristol Electronics NDS8936CT 35
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    Quest Components NDS8936CT 28
    • 1 $7.5
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    • 100 $5
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    NDS8936 Datasheets (7)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    NDS8936 Fairchild Semiconductor Dual N-Channel Enhancement Mode Field Effect Transistor Original PDF
    NDS8936 Fairchild Semiconductor Dual N-Channel Enhancement Mode Field Effect Transistor Original PDF
    NDS8936 Fairchild Semiconductor Dual N-Channel Enhancement Mode Field Effect Trans Original PDF
    NDS8936 Toshiba Power MOSFETs Cross Reference Guide Original PDF
    NDS8936 Fairchild Semiconductor Dual N-Channel Enhancement Mode Field Effect Transistor Scan PDF
    NDS8936 National Semiconductor Dual N-Channel Enhancement Mode Field Effect Transistor Scan PDF
    NDS8936_NL Fairchild Semiconductor Dual N-Channel Enhancement Mode Field Effect Transistor Original PDF

    NDS8936 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    nds8936

    Abstract: No abstract text available
    Text: June 1997 NDS8936 Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is


    Original     		PDF NDS8936 NDS8936

    CJ125

    Abstract: nds8936
    Text: N July 1996 NDS8936 Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-Channel enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS technology. This very high density process is especially tailored


    Original     		PDF NDS8936 NDS8936 CJ125

    Untitled

    Abstract: No abstract text available
    Text: June 1997 NDS8936 Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is


    Original     		PDF NDS8936

    NDS8936

    Abstract: No abstract text available
    Text: June 1997 NDS8936 Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is


    Original     		PDF NDS8936 NDS8936

    CBVK741B019

    Abstract: F011 F63TNR F852 FDS9953A L86Z NDS8936
    Text: June 1997 NDS8936 Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is


    Original     		PDF NDS8936 CBVK741B019 F011 F63TNR F852 FDS9953A L86Z NDS8936

    fqp60n06

    Abstract: spb32N03l rfp60n06 SSH6N80 FQP50N10 FSD6680 STP55NF06 AND ITS EQUIVALENT SFP70N03 HGTG*N60A4D irf630 irf640
    Text: MOSFETs Progress in Power Switching Cross Reference STM i c r o e l e c t r o n i c s More Intelligent Solutions FAIRCHILD / SAMSUNG FAIRCHILD / INTERSIL HITACHI ON-SEMI PHILIPS INFINEON SIEMENS TEMIC / VISHAY TOSHIBA IR IXYS ST Nearest Preferred Supplier


    Original     		PDF STP7NB40 STT3PF30L STD20NE03L STP60NE03L-12 STP60NE03L-10 STP40NF03L STP80NE03L-06 STS4DPF30L fqp60n06 spb32N03l rfp60n06 SSH6N80 FQP50N10 FSD6680 STP55NF06 AND ITS EQUIVALENT SFP70N03 HGTG*N60A4D irf630 irf640

    BC548 TRANSISTOR REPLACEMENT

    Abstract: TYN612 pin diagram 1n4007 smd, toshiba S0817MH TYN604 scr pin diagram kmz51 compass TRANSISTOR S1A 64 smd toshiba l 300 laptop motherboard circuit diagram JFET TRANSISTOR REPLACEMENT GUIDE j201 replacements for transistor NEC D 587
    Text: 5.2 5.4 5.46 5.124 5.130 5.130 5.140 5.180 Introduction Diodes & Rectifiers Transistors Triacs,Thyristors and Diacs Sensors Cross Reference General Application discretes Cross Reference Power discretes Cross Reference RF discretes Discrete Components 5.1 Introduction


    Original     		PDF BAP1321-02 BAP65-05 BAP65-03 BAP65-05W BAP65-02 BAP63-03 BAP63-02 BAP64-03 BAP64-02 BB143 BC548 TRANSISTOR REPLACEMENT TYN612 pin diagram 1n4007 smd, toshiba S0817MH TYN604 scr pin diagram kmz51 compass TRANSISTOR S1A 64 smd toshiba l 300 laptop motherboard circuit diagram JFET TRANSISTOR REPLACEMENT GUIDE j201 replacements for transistor NEC D 587

    FDC6331

    Abstract: fdp047an FDB045AN FQPF10N20 FQA70N15 FQPF*13N06L fdd5614p fqp50n06 TO252-DPAK FDC6305
    Text: Discrete Temperature range Software version Revision date 2N7002 SOT-23-3 Electrical/Thermal 25°C to 125°C N/A N/A 2N7002MTF SOT-23-3 Electrical/Thermal 25°C to 125°C N/A N/A BS170 TO-92-3 Electrical 25°C to 125°C Orcad 9.1 Mar 22, 2002 BSS123 SOT-23-3


    Original     		PDF 2N7002 2N7002MTF BS170 BSS123 BSS138 BSS84 FDB045AN08A0 FDB2532 FDB3632 FDB3652 FDC6331 fdp047an FDB045AN FQPF10N20 FQA70N15 FQPF*13N06L fdd5614p fqp50n06 TO252-DPAK FDC6305

    TCA780

    Abstract: TFK U 111 B TFK U 4614 B TFK S 186 P TFK U 217 B TFK BP w 41 n TFK BPW 41 N Tfk 880 TFK 148 TDSR 5150 G
    Text: Industry Part Number 1N3245 1N3611GP 1N3612GP 1N3613GP 1N3614GP 1N3725 1N3957GP 1N4001GP 1N4002GP 1N4003GP 1N4004GP 1N4005GP 1N4006GP 1N4007GP 1N4245GP 1N4246GP 1N4247GP 1N4248GP 1N4249GP 1N4678.1N4717 1N4728A.1N4761A 1N4933GP 1N4934GP 1N4935GP 1N4936GP


    Original     		PDF 1N3245 1N3611GP 1N3612GP 1N3613GP 1N3614GP 1N3725 1N3957GP 1N4001GP 1N4002GP 1N4003GP TCA780 TFK U 111 B TFK U 4614 B TFK S 186 P TFK U 217 B TFK BP w 41 n TFK BPW 41 N Tfk 880 TFK 148 TDSR 5150 G

    schematic diagram atx Power supply 500w

    Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
    Text: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455


    Original     		PDF P462-ND P463-ND LNG295LFCP2U LNG395MFTP5U US2011) schematic diagram atx Power supply 500w pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS

    MAX1652EEE

    Abstract: MAX1655 battery charger 48v 10A MAX1653EVKIT MAX1652 MAX1653ESE MAX1654 MAX797 mpp schematic DALE R033F
    Text: 19-1357; Rev 1; 7/98 KIT ATION EVALU E L B AVAILA High-Efficiency, PWM, Step-Down DC-DC Controllers in 16-Pin QSOP _Features ♦ 96% Efficiency The MAX1652–MAX1655 achieve up to 96% efficiency and deliver up to 10A using a unique Idle Mode synchronous-rectified PWM control scheme. These devices


    Original     		PDF 16-Pin MAX1652 MAX1655 MAX1653/MAX1655 150kHz/300kHz c1990 MAX1655 MAX1652EEE battery charger 48v 10A MAX1653EVKIT MAX1653ESE MAX1654 MAX797 mpp schematic DALE R033F

    irfb4115

    Abstract: BTY79 equivalent diode skn 21-04 marking CODE W04 sot-23 bbc 598 479 DIODE mw 137 600g TFK 401 S 673 Vishay Telefunken tfk transistor INFINEON transistor marking W31 JYs marking transistor
    Text: 573 Technical portal and online community for Design Engineers - www.element-14.com Discrete & Power Devices Page 700 Bridge Rectifiers . . . . . . . . . . . . . . . . . . . . . . . . Diodes Schottky . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .


    Original     		PDF element-14 F155-6A F155-10A F165-15A F175-25A irfb4115 BTY79 equivalent diode skn 21-04 marking CODE W04 sot-23 bbc 598 479 DIODE mw 137 600g TFK 401 S 673 Vishay Telefunken tfk transistor INFINEON transistor marking W31 JYs marking transistor

    mosfet cross reference

    Abstract: SMP40N06 SMP75N06-08 SI9952DY SMP60N03-10L IRFZ44 TO-263 Si9948DY irf1010e equivalent IRLL014N NDT3055L
    Text: Discrete POWER & Signal Technologies MOSFET Cross Reference Guide Industry Recommended Part Number Fairchild Device Package Industry Recommended Part Number Fairchild Device 2N7000 2N7000 TO-92, N IRF7203 FDS9435A 2N7002 2N7002 SOT-23, N IRF7204 NDS8434A SO-8, P


    Original     		PDF 2N7000 IRF7203 FDS9435A 2N7002 OT-23, IRF7204 NDS8434A BS170 mosfet cross reference SMP40N06 SMP75N06-08 SI9952DY SMP60N03-10L IRFZ44 TO-263 Si9948DY irf1010e equivalent IRLL014N NDT3055L

    SSP35n03

    Abstract: bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent
    Text: Cross Reference Guide Industry 1.5KE100A 1.5KE100CA 1.5KE10A 1.5KE10CA 1.5KE110A 1.5KE110CA 1.5KE11A 1.5KE11CA 1.5KE120A 1.5KE120CA 1.5KE12A 1.5KE12CA 1.5KE130A 1.5KE130CA 1.5KE13A 1.5KE13CA 1.5KE150A 1.5KE150CA 1.5KE15A 1.5KE15CA 1.5KE160A 1.5KE160CA 1.5KE16A


    Original     		PDF 5KE100A 5KE100CA 5KE10A 5KE10CA 5KE110A 5KE110CA 5KE11A 5KE11CA 5KE120A 5KE120CA SSP35n03 bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent

    MAX1655

    Abstract: 594D227X0010D2T
    Text: 19-1357; Rev 1; 7/98 MAX1653 Evaluation Kit Features ♦ +4.5V to +28V Input Voltage Range ♦ Selectable +3.3V or +5V Output Voltage ♦ +2.5V to +5.5V Adjustable Output MAX1653 +1.0V to +5.5V Adjustable Output (MAX1655) ♦ 2A Output Current ♦ 3µA IC Shutdown Current


    Original     		PDF MAX1653 300kHz MAX1655, MAX1653) MAX1655) MAX1653/MAX1655 MAX1655 594D227X0010D2T

    YTA630

    Abstract: MTW14P20 BSS125 MTAJ30N06HD 2SK2837 equivalent SMU10P05 SMP60N06 replacement STE180N10 RFH75N05E IRFD620
    Text: Power MOSFETs Cross Reference Alphanumerically Part Number VDSS V RDS(ON) (ohm) ID (A) PD (W) Package 2N7000 2N7002 2SJ377 2SJ378 2SJ380 2SJ401 2SJ402 2SJ407 2SJ412 2SJ419 2SJ420 2SJ421 2SJ438 2SJ439 2SJ464 2SJ465 2SJ468 2SJ469 2SJ482 2SJ507 2SJ508 2SJ509


    Original     		PDF 2N7000 2N7002 2SJ377 2SJ378 2SJ380 2SJ401 2SJ402 2SJ407 2SJ412 2SJ419 YTA630 MTW14P20 BSS125 MTAJ30N06HD 2SK2837 equivalent SMU10P05 SMP60N06 replacement STE180N10 RFH75N05E IRFD620

    SSH6N80

    Abstract: rfp60n06 IRF3205 IR BUK417-500AE SFP70N03 BUZ91A 2SK2717 STMicroelectronics BUZ22 IXFH13N50
    Text: Sales type BUZ10 BUZ11 BUZ11A BUZ71 BUZ71A BUZ72A BUZ80A IRF520 IRF530 IRF540 IRF620 IRF630 IRF640 IRF730 IRF740 IRF820 IRF830 IRF840 IRFBC30 IRFBC40 IRFZ40 MTP3055E STB10NA40 STB10NB20 STB10NB50 STB11NB40 STB15N25 STB16NB25 STB18N20 STB19NB20 STB30N10 STB36NE03L


    Original     		PDF BUZ10 BUZ11 BUZ11A BUZ71 BUZ71A BUZ72A BUZ80A IRF520 IRF530 IRF540 SSH6N80 rfp60n06 IRF3205 IR BUK417-500AE SFP70N03 BUZ91A 2SK2717 STMicroelectronics BUZ22 IXFH13N50

    HTGB

    Abstract: FDS*35A FDS*6609A fds4559 fds5680 FDS3670 FDS369 FDS4935A FDS6675A fds6912
    Text: Date Created: 1/23/2004 Date Issued: 2/13/2004 PCN # 20040403 FORECAST CHANGE NOTIFICATION This is to inform you that a design and/or process change will be made to the following product s . This notification is for your information and concurrence. This is a preliminary notification. A final PCN will


    Original     		PDF fairchil936 BNY001A SI4412DY SI4425DY SI4450DY SI4467DY SI4539DY SI4835DY SI4920DY SI4953DY HTGB FDS*35A FDS*6609A fds4559 fds5680 FDS3670 FDS369 FDS4935A FDS6675A fds6912

    NDS8936

    Abstract: No abstract text available
    Text: National Semiconductor July 1996 NDS8936 Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features These IM-Channel enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS technology.


    OCR Scan     		PDF NDS8936 NDS8936

    S8936

    Abstract: DS8936
    Text: FA IR C H ILD SEM ICONDUCTO R June1997 tm NDS8936 Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is


    OCR Scan     		PDF e1997 NDS8936 S8936 DS8936

    Untitled

    Abstract: No abstract text available
    Text: F A I R C H June 1997 I L D SEM IC ONDUCTO R tm NDS8936 Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell


    OCR Scan     		PDF NDS8936 NDS8936 193tQ

    NDS8936

    Abstract: No abstract text available
    Text: F A IR C H IL D M ICDNDUCTQ R June 1997 tm NDS8936 Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is


    OCR Scan     		PDF NDS8936 NDS8936 0D33347

    MAX1652EEE

    Abstract: MAX1655 siliconix FET AUDIO AMPLIFIER s8410
    Text: y k iy jx iv k i H i g h - E f f i c i e n c y , PWM, S t e p - D o w n DC-DC C o n t r o l l e r s in 16-Pin QSOP _ F e a t u r e s The M A X 1 6 5 2 -M A X 1 655 are h ig h -e ffic ie n c y , pulsewidth-m odulated PWM , step-down DC-DC controllers


    OCR Scan     		PDF 16-Pin MAX1653/MAX1655 MAX797. MAX1655) AX1652-M AX1655 ModeTM97 102mm S012-XX MAX1652EEE MAX1655 siliconix FET AUDIO AMPLIFIER s8410

    MAX1652EEE

    Abstract: MAX1655 controller LTA 702 N siliconix FET AUDIO AMPLIFIER CoilCraft 104
    Text: y k iy jx iv k i H i g h - E f f i c i e n c y , PWM, S t e p - D o w n DC-DC C o n t r o l l e r s in 16-Pin QSOP _ F e a t u r e s The M A X 1 6 5 2 -M A X 1 655 are h ig h -e ffic ie n c y , pulsewidth-m odulated PWM , step-down DC-DC controllers


    OCR Scan     		PDF 16-Pin MAX1653/MAX1655 MAX797. MAX1655) AX1652-M AX1655 MAX1652EEE MAX1655 controller LTA 702 N siliconix FET AUDIO AMPLIFIER CoilCraft 104